Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
Gespeichert in:
Weitere Verfasser: | , , , , |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Dordrecht
Springer
[2016]
|
Schriftenreihe: | Topics in Applied Physics
volume 131 |
Schlagworte: | |
Online-Zugang: | TUM01 UBT01 Volltext |
Beschreibung: | 1 Online-Ressource (XVIII, 347 p. 254 illus., 150 illus. in color) |
ISBN: | 9789402408416 |
DOI: | 10.1007/978-94-024-0841-6 |
Internformat
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264 | 1 | |a Dordrecht |b Springer |c [2016] | |
264 | 4 | |c © 2016 | |
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650 | 4 | |a Physics | |
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650 | 4 | |a Interfaces (Physical sciences) | |
650 | 4 | |a Thin films | |
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650 | 4 | |a Electronics and Microelectronics, Instrumentation | |
650 | 4 | |a Surfaces and Interfaces, Thin Films | |
650 | 4 | |a Circuits and Systems | |
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700 | 1 | |a Park, Byung-Eun |4 edt | |
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700 | 1 | |a Okuyama, Masanori |4 edt | |
700 | 1 | |a Sakai, Shigeki |4 edt | |
700 | 1 | |a Yoon, Sung-Min |4 edt | |
776 | 0 | 8 | |i Erscheint auch als |n Druckausgabe |z 978-94-024-0839-3 |
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Datensatz im Suchindex
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any_adam_object | |
author2 | Park, Byung-Eun Ishiwara, Hiroshi 1945- Okuyama, Masanori Sakai, Shigeki Yoon, Sung-Min |
author2_role | edt edt edt edt edt |
author2_variant | b e p bep h i hi m o mo s s ss s m y smy |
author_GND | (DE-588)12899889X |
author_facet | Park, Byung-Eun Ishiwara, Hiroshi 1945- Okuyama, Masanori Sakai, Shigeki Yoon, Sung-Min |
building | Verbundindex |
bvnumber | BV043831266 |
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collection | ZDB-2-PHA |
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dewey-search | 621.3815 |
dewey-sort | 3621.3815 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
doi_str_mv | 10.1007/978-94-024-0841-6 |
format | Electronic eBook |
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illustrated | Not Illustrated |
indexdate | 2024-07-10T07:36:15Z |
institution | BVB |
isbn | 9789402408416 |
language | English |
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physical | 1 Online-Ressource (XVIII, 347 p. 254 illus., 150 illus. in color) |
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publishDate | 2016 |
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publisher | Springer |
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series | Topics in Applied Physics |
series2 | Topics in Applied Physics |
spelling | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon (editors) Dordrecht Springer [2016] © 2016 1 Online-Ressource (XVIII, 347 p. 254 illus., 150 illus. in color) txt rdacontent c rdamedia cr rdacarrier Topics in Applied Physics volume 131 Physics Surfaces (Physics) Interfaces (Physical sciences) Thin films Electronic circuits Electronics Microelectronics Materials / Surfaces Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films Park, Byung-Eun edt Ishiwara, Hiroshi 1945- (DE-588)12899889X edt Okuyama, Masanori edt Sakai, Shigeki edt Yoon, Sung-Min edt Erscheint auch als Druckausgabe 978-94-024-0839-3 Topics in Applied Physics volume 131 (DE-604)BV013479760 131 https://doi.org/10.1007/978-94-024-0841-6 Verlag URL des Erstveröffentlichers Volltext |
spellingShingle | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications Topics in Applied Physics Physics Surfaces (Physics) Interfaces (Physical sciences) Thin films Electronic circuits Electronics Microelectronics Materials / Surfaces Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films |
title | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications |
title_auth | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications |
title_exact_search | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications |
title_full | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon (editors) |
title_fullStr | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon (editors) |
title_full_unstemmed | Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon (editors) |
title_short | Ferroelectric-Gate Field Effect Transistor Memories |
title_sort | ferroelectric gate field effect transistor memories device physics and applications |
title_sub | Device Physics and Applications |
topic | Physics Surfaces (Physics) Interfaces (Physical sciences) Thin films Electronic circuits Electronics Microelectronics Materials / Surfaces Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films |
topic_facet | Physics Surfaces (Physics) Interfaces (Physical sciences) Thin films Electronic circuits Electronics Microelectronics Materials / Surfaces Electronic Circuits and Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Circuits and Systems Surface and Interface Science, Thin Films |
url | https://doi.org/10.1007/978-94-024-0841-6 |
volume_link | (DE-604)BV013479760 |
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