APA-Zitierstil (7. Ausg.)

Park, B., Ishiwara, H., Okuyama, M., Sakai, S., & Yoon, S. (2016). Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications. Springer. https://doi.org/10.1007/978-94-024-0841-6

Chicago-Zitierstil (17. Ausg.)

Park, Byung-Eun, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, und Sung-Min Yoon. Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications. Dordrecht: Springer, 2016. https://doi.org/10.1007/978-94-024-0841-6.

MLA-Zitierstil (9. Ausg.)

Park, Byung-Eun, et al. Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications. Springer, 2016. https://doi.org/10.1007/978-94-024-0841-6.