Silicon carbide and related materials 2013:
Gespeichert in:
| Körperschaft: | |
|---|---|
| Weitere Verfasser: | |
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Switzerland
Trans Tech Publications
2014
|
| Schriftenreihe: | Materials science forum
v. 778-780 |
| Schlagworte: |
Silicon carbide
> Congresses
> Silicon carbide
> Electric properties
> Congresses
> Silicon-carbide thin films
> Congresses
> Nitrides
> Congresses
> Graphene
> Congresses
> Crystal growth
> Congresses
> Wide gap semiconductors
> Materials
> Congresses
> Wide gap semiconductors
> Materials
> Technological innovations
> Congresses
|
| Online-Zugang: | FAW01 FAW02 |
| Beschreibung: | "The 15th International Conference on Silicon Carbide and Related Materials (ICSCRM2013) was held in Miyazaki, Japan, from September 29 through October 4, 2013. The conference provided a scientific forum on the wide bandgap semiconductors for 794 participants from 24 countries"--Preface Description based on online resource; title from HTML table of contents page (Scientific.Net viewed Mar. 12, 2014) |
| Beschreibung: | 1 online resource (1205 pages) illustrations (some color) |
| ISBN: | 9783038263913 3038263915 9783038350101 |
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| 245 | 1 | 0 | |a Silicon carbide and related materials 2013 |c edited by Hajime Okumura [and eight others] |
| 264 | 1 | |a Switzerland |b Trans Tech Publications |c 2014 | |
| 264 | 4 | |c © 2014 | |
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| 490 | 0 | |a Materials science forum |v v. 778-780 | |
| 500 | |a "The 15th International Conference on Silicon Carbide and Related Materials (ICSCRM2013) was held in Miyazaki, Japan, from September 29 through October 4, 2013. The conference provided a scientific forum on the wide bandgap semiconductors for 794 participants from 24 countries"--Preface | ||
| 500 | |a Description based on online resource; title from HTML table of contents page (Scientific.Net viewed Mar. 12, 2014) | ||
| 505 | 8 | |a Silicon Carbide and Related Materials 2013; Preface, Committees, Sponsors and Overview; Table of Contents; Chapter 1: SiC Bulk Growth; 1.1 PVT and CVD; Open Issues in SiC Bulk Growth; Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography; Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation; Development of RAF Quality 150mm 4H-SiC Wafer; Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth; Effect of TaC-Coated Crucible on SiC Single Crystal Growth | |
| 505 | 8 | |a Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVTComparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT; Spiral Step Dissociation on PVT Grown SiC Crystals; Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis; Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique; 4H-SiC Bulk Growth Using High-Temperature Gas Source Method; Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method | |
| 505 | 8 | |a Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method1.2 Solution Growth; Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC; Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent; Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach; Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity | |
| 505 | 8 | |a Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal SolventsChapter 2: SiC Epitaxial Growth; 2.1 Homoepitaxial Growth; Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques; Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density; Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications; Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle | |
| 505 | 8 | |a Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary ReactorC-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput; Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor; Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation; 4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106; Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate; Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate | |
| 505 | 8 | |a The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. T. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Mechanical |2 bisacsh | |
| 650 | 7 | |a Silicon carbide |2 fast | |
| 650 | 7 | |a Silicon carbide / Electric properties |2 fast | |
| 650 | 4 | |a Silicon carbide |v Congresses |a Silicon carbide |x Electric properties |v Congresses |a Silicon-carbide thin films |v Congresses |a Nitrides |v Congresses |a Graphene |v Congresses |a Crystal growth |v Congresses |a Wide gap semiconductors |x Materials |v Congresses |a Wide gap semiconductors |x Materials |x Technological innovations |v Congresses | |
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| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |a International Conference on Silicon Carbide and Related Materials (15th : 2013 : Miyazaki-shi, Japan) |t Silicon carbide and related materials : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan |
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Datensatz im Suchindex
| _version_ | 1804176609920417792 |
|---|---|
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| author2 | Okumura, Hajime |
| author2_role | edt |
| author2_variant | h o ho |
| author_corporate | International Conference on Silicon Carbide and Related Materials < 2013, Miyazaki-shi, Japan> |
| author_corporate_role | aut |
| author_facet | Okumura, Hajime International Conference on Silicon Carbide and Related Materials < 2013, Miyazaki-shi, Japan> |
| author_sort | International Conference on Silicon Carbide and Related Materials < 2013, Miyazaki-shi, Japan> |
| building | Verbundindex |
| bvnumber | BV043780254 |
| collection | ZDB-4-EBA |
| contents | Silicon Carbide and Related Materials 2013; Preface, Committees, Sponsors and Overview; Table of Contents; Chapter 1: SiC Bulk Growth; 1.1 PVT and CVD; Open Issues in SiC Bulk Growth; Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography; Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation; Development of RAF Quality 150mm 4H-SiC Wafer; Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth; Effect of TaC-Coated Crucible on SiC Single Crystal Growth Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVTComparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT; Spiral Step Dissociation on PVT Grown SiC Crystals; Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis; Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique; 4H-SiC Bulk Growth Using High-Temperature Gas Source Method; Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method1.2 Solution Growth; Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC; Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent; Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach; Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal SolventsChapter 2: SiC Epitaxial Growth; 2.1 Homoepitaxial Growth; Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques; Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density; Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications; Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary ReactorC-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput; Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor; Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation; 4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106; Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate; Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. T. |
| ctrlnum | (ZDB-4-EBA)ocn872573051 (OCoLC)872573051 (DE-599)BVBBV043780254 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| indexdate | 2024-07-10T07:34:55Z |
| institution | BVB |
| isbn | 9783038263913 3038263915 9783038350101 |
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| series2 | Materials science forum |
| spelling | International Conference on Silicon Carbide and Related Materials < 2013, Miyazaki-shi, Japan> Verfasser aut Silicon carbide and related materials 2013 edited by Hajime Okumura [and eight others] Switzerland Trans Tech Publications 2014 © 2014 1 online resource (1205 pages) illustrations (some color) txt rdacontent c rdamedia cr rdacarrier Materials science forum v. 778-780 "The 15th International Conference on Silicon Carbide and Related Materials (ICSCRM2013) was held in Miyazaki, Japan, from September 29 through October 4, 2013. The conference provided a scientific forum on the wide bandgap semiconductors for 794 participants from 24 countries"--Preface Description based on online resource; title from HTML table of contents page (Scientific.Net viewed Mar. 12, 2014) Silicon Carbide and Related Materials 2013; Preface, Committees, Sponsors and Overview; Table of Contents; Chapter 1: SiC Bulk Growth; 1.1 PVT and CVD; Open Issues in SiC Bulk Growth; Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography; Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation; Development of RAF Quality 150mm 4H-SiC Wafer; Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth; Effect of TaC-Coated Crucible on SiC Single Crystal Growth Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVTComparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT; Spiral Step Dissociation on PVT Grown SiC Crystals; Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis; Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique; 4H-SiC Bulk Growth Using High-Temperature Gas Source Method; Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method1.2 Solution Growth; Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC; Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent; Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach; Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal SolventsChapter 2: SiC Epitaxial Growth; 2.1 Homoepitaxial Growth; Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques; Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density; Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications; Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary ReactorC-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput; Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor; Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation; 4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106; Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate; Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. T. TECHNOLOGY & ENGINEERING / Mechanical bisacsh Silicon carbide fast Silicon carbide / Electric properties fast Silicon carbide Congresses Silicon carbide Electric properties Congresses Silicon-carbide thin films Congresses Nitrides Congresses Graphene Congresses Crystal growth Congresses Wide gap semiconductors Materials Congresses Wide gap semiconductors Materials Technological innovations Congresses Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Siliciumcarbid (DE-588)4055009-6 s DE-604 Okumura, Hajime edt Erscheint auch als Druck-Ausgabe International Conference on Silicon Carbide and Related Materials (15th : 2013 : Miyazaki-shi, Japan) Silicon carbide and related materials : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan |
| spellingShingle | Silicon carbide and related materials 2013 Silicon Carbide and Related Materials 2013; Preface, Committees, Sponsors and Overview; Table of Contents; Chapter 1: SiC Bulk Growth; 1.1 PVT and CVD; Open Issues in SiC Bulk Growth; Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography; Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation; Development of RAF Quality 150mm 4H-SiC Wafer; Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth; Effect of TaC-Coated Crucible on SiC Single Crystal Growth Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVTComparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT; Spiral Step Dissociation on PVT Grown SiC Crystals; Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis; Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique; 4H-SiC Bulk Growth Using High-Temperature Gas Source Method; Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method1.2 Solution Growth; Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC; Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent; Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach; Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal SolventsChapter 2: SiC Epitaxial Growth; 2.1 Homoepitaxial Growth; Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques; Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density; Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications; Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary ReactorC-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput; Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor; Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation; 4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106; Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate; Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. T. TECHNOLOGY & ENGINEERING / Mechanical bisacsh Silicon carbide fast Silicon carbide / Electric properties fast Silicon carbide Congresses Silicon carbide Electric properties Congresses Silicon-carbide thin films Congresses Nitrides Congresses Graphene Congresses Crystal growth Congresses Wide gap semiconductors Materials Congresses Wide gap semiconductors Materials Technological innovations Congresses Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4055009-6 (DE-588)1071861417 |
| title | Silicon carbide and related materials 2013 |
| title_auth | Silicon carbide and related materials 2013 |
| title_exact_search | Silicon carbide and related materials 2013 |
| title_full | Silicon carbide and related materials 2013 edited by Hajime Okumura [and eight others] |
| title_fullStr | Silicon carbide and related materials 2013 edited by Hajime Okumura [and eight others] |
| title_full_unstemmed | Silicon carbide and related materials 2013 edited by Hajime Okumura [and eight others] |
| title_short | Silicon carbide and related materials 2013 |
| title_sort | silicon carbide and related materials 2013 |
| topic | TECHNOLOGY & ENGINEERING / Mechanical bisacsh Silicon carbide fast Silicon carbide / Electric properties fast Silicon carbide Congresses Silicon carbide Electric properties Congresses Silicon-carbide thin films Congresses Nitrides Congresses Graphene Congresses Crystal growth Congresses Wide gap semiconductors Materials Congresses Wide gap semiconductors Materials Technological innovations Congresses Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Mechanical Silicon carbide Silicon carbide / Electric properties Silicon carbide Congresses Silicon carbide Electric properties Congresses Silicon-carbide thin films Congresses Nitrides Congresses Graphene Congresses Crystal growth Congresses Wide gap semiconductors Materials Congresses Wide gap semiconductors Materials Technological innovations Congresses Siliciumcarbid Konferenzschrift |
| work_keys_str_mv | AT internationalconferenceonsiliconcarbideandrelatedmaterials2013miyazakishijapan siliconcarbideandrelatedmaterials2013 AT okumurahajime siliconcarbideandrelatedmaterials2013 |