Thick films: properties, technology, and applications
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
New York
Nova Science Publishers
©2012
|
| Schriftenreihe: | Materials science and technologies series
Electrical engineering developments series |
| Schlagworte: | |
| Online-Zugang: | FAW01 FAW02 |
| Beschreibung: | Includes bibliographical references and index ""THICK FILMS ""; ""THICK FILMS ""; ""CONTENTS ""; ""PREFACE""; ""TRANSPORT AND CHEMICAL PROCESSES FOR SEMICONDUCTOR SILICON EPITAXIAL FILM FORMATION ""; ""ABSTRACT ""; ""1. CHEMICAL PROCESS OF SILICON EPITAXIAL GROWTH IN A TRICHLOROSILANE-HYDROGEN SYSTEM ""; ""1.1. Introduction ""; ""1.2. Silicon Epitaxial Growth""; ""1.3. Quadrupole Mass Spectrometry (QMS) ""; ""1.4. Mass Spectra of Chlorosilane Gases ""; ""1.5. Hydrogen Chloride Gas Concentration ""; ""1.6. Dominant Chlorosilane Species in the Gas Phase ""; ""1.7. Dominant Overall Chemical Reaction "" ""1.8. Contribution of Surface Reaction in a Trichlorosilane-Hydrogen System """"2. GAS FLOW AND HEAT TRANSFER IN A PANCAKE CHEMICAL VAPOR DEPOSITION REACTOR ""; ""2.1. Introduction ""; ""2.2. Reactor Configuration and Experimental Conditions""; ""2.3. Reactor Geometry and Calculations ""; ""2.4. Gas Motions at Room Temperature ""; ""2.5. Gas Flow and Heat Transfer at Epitaxial Growth Temperature ""; ""3. NUMERICAL EVALUATION OF SILICON FILM GROWTH FROM TRICHLOROSILANE-HYDROGEN GAS MIXTURE IN A HORIZONTAL CHEMICAL VAPOR DEPOSITION REACTOR ""; ""3.1. Introduction "" ""3.2. Preparation of Silicon Epitaxial Film """"3.3. Chemical Reaction Rate ""; ""3.4. Transport Phenomena in the Reactor""; ""3.5. Effect of Trichlorosilane Concentration on Gas Flow and Temperature ""; ""3.6. Effect of Trichlorosilane Concentration and Thermal Diffusion on Growth Rate ""; ""4. ROLE OF SUBSTRATE ROTATION FOR EPITAXIAL SILICON FILM GROWTH IN A HORIZONTAL SINGLE-WAFER REACTOR ""; ""4.1. Introduction ""; ""4.2. Si Epitaxial Film Growth Process ""; ""4.3. Silicon Film Growth Rate and Thickness on the Rotating Substrate "" ""4.4. Transport Phenomena Induced by Rotating Substrate """"5. TRANSPORT AND EPITAXY MODEL FOR OF SILICON EPITAXIAL GROWTH IN TRICHLOROSILANE-HYDROGEN SYSTEM""; ""5.1. Introduction""; ""5.2. Preparation of Silicon Epitaxial Films ""; ""5.3. Model on the Rate Process ""; ""5.3.1. Chemical Species in the Gas Phase ""; ""5.3.2. Chemical Species at Substrate Surface ""; ""5.3.3. Chemical Reactions and Rate Process at the Surface ""; ""5.4. Silicon Epitaxial Growth Rate""; ""5.5. Rate constants ""; ""5.6. State Of Surface during Epitaxial Growth "" ""6. NONLINEAR INCREASE IN SILICON EPITAXIAL GROWTH RATE IN A TRICHLOROSILANE-HYDROGEN SYSTEM AT ATMOSPHERIC PRESSURE """"6.1. Mechanism for Nonlinear Increase in Growth Rate ""; ""7. MULTI-INLET DESIGN AND SILICON EPITAXIAL FILM FLATNESS ""; ""7.1. Introduction ""; ""7.2. Reactor Configuration for Calculations ""; ""7.3. Thickness Profile and Its Formation Mechanism ""; ""8. LOCAL THICKNESS PROFILE OF SILICON EPITAXIAL FILM FORMED IN A HORIZONTAL SINGLE-WAFER EPITAXIAL REACTOR""; ""8.1. Introduction ""; ""8.2. Reactor Configuration For Calculations ""; ""8.3. Epitaxial Film Formation "" |
| Beschreibung: | x, 386 pages |
| ISBN: | 1614704015 9781614704010 9781614703846 1614703841 |
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| 245 | 1 | 0 | |a Thick films |b properties, technology, and applications |c Michael I. Panzini, editor |
| 264 | 1 | |a New York |b Nova Science Publishers |c ©2012 | |
| 300 | |a x, 386 pages | ||
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| 490 | 0 | |a Materials science and technologies series | |
| 490 | 0 | |a Electrical engineering developments series | |
| 500 | |a Includes bibliographical references and index | ||
| 500 | |a ""THICK FILMS ""; ""THICK FILMS ""; ""CONTENTS ""; ""PREFACE""; ""TRANSPORT AND CHEMICAL PROCESSES FOR SEMICONDUCTOR SILICON EPITAXIAL FILM FORMATION ""; ""ABSTRACT ""; ""1. CHEMICAL PROCESS OF SILICON EPITAXIAL GROWTH IN A TRICHLOROSILANE-HYDROGEN SYSTEM ""; ""1.1. Introduction ""; ""1.2. Silicon Epitaxial Growth""; ""1.3. Quadrupole Mass Spectrometry (QMS) ""; ""1.4. Mass Spectra of Chlorosilane Gases ""; ""1.5. Hydrogen Chloride Gas Concentration ""; ""1.6. Dominant Chlorosilane Species in the Gas Phase ""; ""1.7. Dominant Overall Chemical Reaction "" | ||
| 500 | |a ""1.8. Contribution of Surface Reaction in a Trichlorosilane-Hydrogen System """"2. GAS FLOW AND HEAT TRANSFER IN A PANCAKE CHEMICAL VAPOR DEPOSITION REACTOR ""; ""2.1. Introduction ""; ""2.2. Reactor Configuration and Experimental Conditions""; ""2.3. Reactor Geometry and Calculations ""; ""2.4. Gas Motions at Room Temperature ""; ""2.5. Gas Flow and Heat Transfer at Epitaxial Growth Temperature ""; ""3. NUMERICAL EVALUATION OF SILICON FILM GROWTH FROM TRICHLOROSILANE-HYDROGEN GAS MIXTURE IN A HORIZONTAL CHEMICAL VAPOR DEPOSITION REACTOR ""; ""3.1. Introduction "" | ||
| 500 | |a ""3.2. Preparation of Silicon Epitaxial Film """"3.3. Chemical Reaction Rate ""; ""3.4. Transport Phenomena in the Reactor""; ""3.5. Effect of Trichlorosilane Concentration on Gas Flow and Temperature ""; ""3.6. Effect of Trichlorosilane Concentration and Thermal Diffusion on Growth Rate ""; ""4. ROLE OF SUBSTRATE ROTATION FOR EPITAXIAL SILICON FILM GROWTH IN A HORIZONTAL SINGLE-WAFER REACTOR ""; ""4.1. Introduction ""; ""4.2. Si Epitaxial Film Growth Process ""; ""4.3. Silicon Film Growth Rate and Thickness on the Rotating Substrate "" | ||
| 500 | |a ""4.4. Transport Phenomena Induced by Rotating Substrate """"5. TRANSPORT AND EPITAXY MODEL FOR OF SILICON EPITAXIAL GROWTH IN TRICHLOROSILANE-HYDROGEN SYSTEM""; ""5.1. Introduction""; ""5.2. Preparation of Silicon Epitaxial Films ""; ""5.3. Model on the Rate Process ""; ""5.3.1. Chemical Species in the Gas Phase ""; ""5.3.2. Chemical Species at Substrate Surface ""; ""5.3.3. Chemical Reactions and Rate Process at the Surface ""; ""5.4. Silicon Epitaxial Growth Rate""; ""5.5. Rate constants ""; ""5.6. State Of Surface during Epitaxial Growth "" | ||
| 500 | |a ""6. NONLINEAR INCREASE IN SILICON EPITAXIAL GROWTH RATE IN A TRICHLOROSILANE-HYDROGEN SYSTEM AT ATMOSPHERIC PRESSURE """"6.1. Mechanism for Nonlinear Increase in Growth Rate ""; ""7. MULTI-INLET DESIGN AND SILICON EPITAXIAL FILM FLATNESS ""; ""7.1. Introduction ""; ""7.2. Reactor Configuration for Calculations ""; ""7.3. Thickness Profile and Its Formation Mechanism ""; ""8. LOCAL THICKNESS PROFILE OF SILICON EPITAXIAL FILM FORMED IN A HORIZONTAL SINGLE-WAFER EPITAXIAL REACTOR""; ""8.1. Introduction ""; ""8.2. Reactor Configuration For Calculations ""; ""8.3. Epitaxial Film Formation "" | ||
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electrical |2 bisacsh | |
| 650 | 7 | |a Electronics / Materials |2 fast | |
| 650 | 7 | |a Thick films |2 fast | |
| 650 | 4 | |a Electronics / Materials | |
| 650 | 4 | |a Thick films | |
| 650 | 4 | |a Thick films | |
| 650 | 4 | |a Electronics |x Materials | |
| 700 | 1 | |a Panzini, Michael I. |e Sonstige |4 oth | |
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| dewey-sort | 3621.3 |
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| id | DE-604.BV043775240 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:34:46Z |
| institution | BVB |
| isbn | 1614704015 9781614704010 9781614703846 1614703841 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029186300 |
| oclc_num | 832313462 |
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| owner_facet | DE-1046 DE-1047 |
| physical | x, 386 pages |
| psigel | ZDB-4-EBA ZDB-4-EBA FAW_PDA_EBA |
| publishDate | 2012 |
| publishDateSearch | 2012 |
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| publisher | Nova Science Publishers |
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| series2 | Materials science and technologies series Electrical engineering developments series |
| spelling | Thick films properties, technology, and applications Michael I. Panzini, editor New York Nova Science Publishers ©2012 x, 386 pages txt rdacontent c rdamedia cr rdacarrier Materials science and technologies series Electrical engineering developments series Includes bibliographical references and index ""THICK FILMS ""; ""THICK FILMS ""; ""CONTENTS ""; ""PREFACE""; ""TRANSPORT AND CHEMICAL PROCESSES FOR SEMICONDUCTOR SILICON EPITAXIAL FILM FORMATION ""; ""ABSTRACT ""; ""1. CHEMICAL PROCESS OF SILICON EPITAXIAL GROWTH IN A TRICHLOROSILANE-HYDROGEN SYSTEM ""; ""1.1. Introduction ""; ""1.2. Silicon Epitaxial Growth""; ""1.3. Quadrupole Mass Spectrometry (QMS) ""; ""1.4. Mass Spectra of Chlorosilane Gases ""; ""1.5. Hydrogen Chloride Gas Concentration ""; ""1.6. Dominant Chlorosilane Species in the Gas Phase ""; ""1.7. Dominant Overall Chemical Reaction "" ""1.8. Contribution of Surface Reaction in a Trichlorosilane-Hydrogen System """"2. GAS FLOW AND HEAT TRANSFER IN A PANCAKE CHEMICAL VAPOR DEPOSITION REACTOR ""; ""2.1. Introduction ""; ""2.2. Reactor Configuration and Experimental Conditions""; ""2.3. Reactor Geometry and Calculations ""; ""2.4. Gas Motions at Room Temperature ""; ""2.5. Gas Flow and Heat Transfer at Epitaxial Growth Temperature ""; ""3. NUMERICAL EVALUATION OF SILICON FILM GROWTH FROM TRICHLOROSILANE-HYDROGEN GAS MIXTURE IN A HORIZONTAL CHEMICAL VAPOR DEPOSITION REACTOR ""; ""3.1. Introduction "" ""3.2. Preparation of Silicon Epitaxial Film """"3.3. Chemical Reaction Rate ""; ""3.4. Transport Phenomena in the Reactor""; ""3.5. Effect of Trichlorosilane Concentration on Gas Flow and Temperature ""; ""3.6. Effect of Trichlorosilane Concentration and Thermal Diffusion on Growth Rate ""; ""4. ROLE OF SUBSTRATE ROTATION FOR EPITAXIAL SILICON FILM GROWTH IN A HORIZONTAL SINGLE-WAFER REACTOR ""; ""4.1. Introduction ""; ""4.2. Si Epitaxial Film Growth Process ""; ""4.3. Silicon Film Growth Rate and Thickness on the Rotating Substrate "" ""4.4. Transport Phenomena Induced by Rotating Substrate """"5. TRANSPORT AND EPITAXY MODEL FOR OF SILICON EPITAXIAL GROWTH IN TRICHLOROSILANE-HYDROGEN SYSTEM""; ""5.1. Introduction""; ""5.2. Preparation of Silicon Epitaxial Films ""; ""5.3. Model on the Rate Process ""; ""5.3.1. Chemical Species in the Gas Phase ""; ""5.3.2. Chemical Species at Substrate Surface ""; ""5.3.3. Chemical Reactions and Rate Process at the Surface ""; ""5.4. Silicon Epitaxial Growth Rate""; ""5.5. Rate constants ""; ""5.6. State Of Surface during Epitaxial Growth "" ""6. NONLINEAR INCREASE IN SILICON EPITAXIAL GROWTH RATE IN A TRICHLOROSILANE-HYDROGEN SYSTEM AT ATMOSPHERIC PRESSURE """"6.1. Mechanism for Nonlinear Increase in Growth Rate ""; ""7. MULTI-INLET DESIGN AND SILICON EPITAXIAL FILM FLATNESS ""; ""7.1. Introduction ""; ""7.2. Reactor Configuration for Calculations ""; ""7.3. Thickness Profile and Its Formation Mechanism ""; ""8. LOCAL THICKNESS PROFILE OF SILICON EPITAXIAL FILM FORMED IN A HORIZONTAL SINGLE-WAFER EPITAXIAL REACTOR""; ""8.1. Introduction ""; ""8.2. Reactor Configuration For Calculations ""; ""8.3. Epitaxial Film Formation "" TECHNOLOGY & ENGINEERING / Electrical bisacsh Electronics / Materials fast Thick films fast Electronics / Materials Thick films Electronics Materials Panzini, Michael I. Sonstige oth |
| spellingShingle | Thick films properties, technology, and applications TECHNOLOGY & ENGINEERING / Electrical bisacsh Electronics / Materials fast Thick films fast Electronics / Materials Thick films Electronics Materials |
| title | Thick films properties, technology, and applications |
| title_auth | Thick films properties, technology, and applications |
| title_exact_search | Thick films properties, technology, and applications |
| title_full | Thick films properties, technology, and applications Michael I. Panzini, editor |
| title_fullStr | Thick films properties, technology, and applications Michael I. Panzini, editor |
| title_full_unstemmed | Thick films properties, technology, and applications Michael I. Panzini, editor |
| title_short | Thick films |
| title_sort | thick films properties technology and applications |
| title_sub | properties, technology, and applications |
| topic | TECHNOLOGY & ENGINEERING / Electrical bisacsh Electronics / Materials fast Thick films fast Electronics / Materials Thick films Electronics Materials |
| topic_facet | TECHNOLOGY & ENGINEERING / Electrical Electronics / Materials Thick films Electronics Materials |
| work_keys_str_mv | AT panzinimichaeli thickfilmspropertiestechnologyandapplications |