Gettering and defect engineering in semiconductor technology XIV: selected papers from the XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor [Technology], (GADEST2011) September 25-30, 2011, Loipersdorf (Fürstenfeld), Austria
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| Format: | Elektronisch E-Book |
| Sprache: | English |
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Durnten-Zuerich
Trans Tech
©2011
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| Schriftenreihe: | Diffusion and defect data
v. 178-179 |
| Schlagworte: | |
| Online-Zugang: | FAW01 FAW02 |
| Beschreibung: | Also called: GADEST 2011 selected papers Includes bibliographical references and indexes The papers contained herein cover the most important and timely issues in the field of "Gettering and Defect Engineering in Semiconductor Technology", ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field. Review from Book News Inc.: Selected papers from a September 2011 meeting deal with fundamental and technological aspects of defects in electronic materials and devices. Papers are organized into 12 sections on areas such as silicon-based and advanced semiconductor materials, nanocrystals and quantum dots, crystalline silicon for solar cells, point defects in Si, defects at interfaces, defect and impurity characterization, gettering and defect engineering, advanced solar cells, silicon-based photonics, and modeling and simulation. Some specific topics addressed include recombination activity of twin boundaries in silicon ribbons, hydrogen decoration of vacancy related complexes in hydrogen implanted silicon, analysis of contaminated oxide-silicon interfaces, and spectroscopic studies of iron and chromium in germanium. Other areas examined include oxygen precipitation studied by X-ray diffraction techniques, structural defect studies of semiconductor crystals with Laue topography, tailoring the electrical properties of undoped GaP, and homogeneous and heterogeneous nucleation of oxygen in S-CZ. Jantsch and Schffler are affiliated with Johannes Kepler University, Austria |
| Beschreibung: | xii, 520 pages |
| ISBN: | 9783038135159 3038135151 9783037852323 3037852321 |
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| 245 | 1 | 0 | |a Gettering and defect engineering in semiconductor technology XIV |b selected papers from the XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor [Technology], (GADEST2011) September 25-30, 2011, Loipersdorf (Fürstenfeld), Austria |c edited by W. Jantsch and F. Schäffler |
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| 650 | 4 | |a Semiconductors |v Congresses | |
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| spelling | International Meeting on Gettering and Defect Engineering in Semiconductor Technology < 2011, Loipersdorf, Austria> Verfasser aut Gettering and defect engineering in semiconductor technology XIV selected papers from the XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor [Technology], (GADEST2011) September 25-30, 2011, Loipersdorf (Fürstenfeld), Austria edited by W. Jantsch and F. Schäffler GADEST 2011 selected papers Durnten-Zuerich Trans Tech ©2011 xii, 520 pages txt rdacontent c rdamedia cr rdacarrier Diffusion and defect data v. 178-179 Also called: GADEST 2011 selected papers Includes bibliographical references and indexes The papers contained herein cover the most important and timely issues in the field of "Gettering and Defect Engineering in Semiconductor Technology", ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field. Review from Book News Inc.: Selected papers from a September 2011 meeting deal with fundamental and technological aspects of defects in electronic materials and devices. Papers are organized into 12 sections on areas such as silicon-based and advanced semiconductor materials, nanocrystals and quantum dots, crystalline silicon for solar cells, point defects in Si, defects at interfaces, defect and impurity characterization, gettering and defect engineering, advanced solar cells, silicon-based photonics, and modeling and simulation. Some specific topics addressed include recombination activity of twin boundaries in silicon ribbons, hydrogen decoration of vacancy related complexes in hydrogen implanted silicon, analysis of contaminated oxide-silicon interfaces, and spectroscopic studies of iron and chromium in germanium. Other areas examined include oxygen precipitation studied by X-ray diffraction techniques, structural defect studies of semiconductor crystals with Laue topography, tailoring the electrical properties of undoped GaP, and homogeneous and heterogeneous nucleation of oxygen in S-CZ. Jantsch and Schffler are affiliated with Johannes Kepler University, Austria TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh Electrical engineering / Materials fast Getters fast Semiconductors fast Silicon crystals / Defects fast Semiconductors Congresses Getters Congresses Silicon crystals Defects Congresses Electrical engineering Materials Congresses (DE-588)1071861417 Konferenzschrift gnd-content Jantsch, W. 1946- Sonstige oth Schläffer, F.77608L Sonstige oth |
| spellingShingle | Gettering and defect engineering in semiconductor technology XIV selected papers from the XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor [Technology], (GADEST2011) September 25-30, 2011, Loipersdorf (Fürstenfeld), Austria TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh Electrical engineering / Materials fast Getters fast Semiconductors fast Silicon crystals / Defects fast Semiconductors Congresses Getters Congresses Silicon crystals Defects Congresses Electrical engineering Materials Congresses |
| subject_GND | (DE-588)1071861417 |
| title | Gettering and defect engineering in semiconductor technology XIV selected papers from the XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor [Technology], (GADEST2011) September 25-30, 2011, Loipersdorf (Fürstenfeld), Austria |
| title_alt | GADEST 2011 selected papers |
| title_auth | Gettering and defect engineering in semiconductor technology XIV selected papers from the XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor [Technology], (GADEST2011) September 25-30, 2011, Loipersdorf (Fürstenfeld), Austria |
| title_exact_search | Gettering and defect engineering in semiconductor technology XIV selected papers from the XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor [Technology], (GADEST2011) September 25-30, 2011, Loipersdorf (Fürstenfeld), Austria |
| title_full | Gettering and defect engineering in semiconductor technology XIV selected papers from the XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor [Technology], (GADEST2011) September 25-30, 2011, Loipersdorf (Fürstenfeld), Austria edited by W. Jantsch and F. Schäffler |
| title_fullStr | Gettering and defect engineering in semiconductor technology XIV selected papers from the XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor [Technology], (GADEST2011) September 25-30, 2011, Loipersdorf (Fürstenfeld), Austria edited by W. Jantsch and F. Schäffler |
| title_full_unstemmed | Gettering and defect engineering in semiconductor technology XIV selected papers from the XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor [Technology], (GADEST2011) September 25-30, 2011, Loipersdorf (Fürstenfeld), Austria edited by W. Jantsch and F. Schäffler |
| title_short | Gettering and defect engineering in semiconductor technology XIV |
| title_sort | gettering and defect engineering in semiconductor technology xiv selected papers from the xivth international biannual meeting on gettering and defect engineering in semiconductor technology gadest2011 september 25 30 2011 loipersdorf furstenfeld austria |
| title_sub | selected papers from the XIVth International Biannual Meeting on Gettering and Defect Engineering in Semiconductor [Technology], (GADEST2011) September 25-30, 2011, Loipersdorf (Fürstenfeld), Austria |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh Electrical engineering / Materials fast Getters fast Semiconductors fast Silicon crystals / Defects fast Semiconductors Congresses Getters Congresses Silicon crystals Defects Congresses Electrical engineering Materials Congresses |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Semiconductors TECHNOLOGY & ENGINEERING / Electronics / Solid State Electrical engineering / Materials Getters Semiconductors Silicon crystals / Defects Semiconductors Congresses Getters Congresses Silicon crystals Defects Congresses Electrical engineering Materials Congresses Konferenzschrift |
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