Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Dresden
TUDpress
2015
|
| Ausgabe: | 1. Auflage |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Inhaltsverzeichnis |
| Beschreibung: | XIII, 220 Seiten Illustrationen 21 cm, 340 g |
| ISBN: | 9783959080286 395908028X |
Internformat
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| 100 | 1 | |a Pawlak, Andreas |d 1982- |e Verfasser |0 (DE-588)1095551108 |4 aut | |
| 245 | 1 | 0 | |a Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors |c Andreas Pawlak |
| 250 | |a 1. Auflage | ||
| 264 | 1 | |a Dresden |b TUDpress |c 2015 | |
| 300 | |a XIII, 220 Seiten |b Illustrationen |c 21 cm, 340 g | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |b Dissertation |c Technische Universität Dresden |d 2015 | ||
| 650 | 0 | 7 | |a Hochfrequenztransistor |0 (DE-588)4123385-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Germanium |0 (DE-588)4135644-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heterobipolartransistor |0 (DE-588)4254091-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Kleinsignalverhalten |0 (DE-588)4164165-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Großsignalverhalten |0 (DE-588)4158301-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Schaltungsentwurf |0 (DE-588)4179389-4 |2 gnd |9 rswk-swf |
| 653 | |a Bipolar Transistors | ||
| 653 | |a SiGe HBTs | ||
| 653 | |a Silicon-Germanium HBTs | ||
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Heterobipolartransistor |0 (DE-588)4254091-4 |D s |
| 689 | 0 | 1 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 2 | |a Germanium |0 (DE-588)4135644-5 |D s |
| 689 | 0 | 3 | |a Schaltungsentwurf |0 (DE-588)4179389-4 |D s |
| 689 | 0 | 4 | |a Hochfrequenztransistor |0 (DE-588)4123385-2 |D s |
| 689 | 0 | 5 | |a Kleinsignalverhalten |0 (DE-588)4164165-6 |D s |
| 689 | 0 | 6 | |a Großsignalverhalten |0 (DE-588)4158301-2 |D s |
| 689 | 0 | |5 DE-604 | |
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Datensatz im Suchindex
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| adam_text | TABLE OF CONTENTS
KURZFASSUNG.......................................................................................................
II
A B
STRACT.............................................................................................................
III
TABLE OF C ONTENTS
.............................................................................................
V
OFTEN USED SYMBOLS AND A C RO N Y M S
...............................................................
IX
1 INTRODUCTION 1
2 MODELING OF SILICON-GERMDNIUM HBTS 5
2.1 PREFACE
...................................................................................................
6
2.2 NUMERICAL SIMULATION OF SIGE HBTS
...................................................
8
2.3 LINEAR AND NON-LINEAR MODELING OF BIPOLAR TRANSISTORS . . . . . . .
. . 11
23.1 T RANSISTOR
.........................................................................
11
2.3.2 LINEAR M O D E LIN G
.............................................................
13
2.3.2.1 VERTICAL NQS EFFECTS
....................................................
13
2.3.2.2 Y LI . . . . 15
2.3.2.3 * 2 1
............................................................... 16
2.3.2.4 * 1 2
...............................................................................
18
2.3.2.5 * 2 2
..................................................................................
21
2.3.2.6 DYNAMIC EMITTER CURRENT CROWDING . . . . . . . . . . 22
2.3.3 NON-LINEAR M ODELING
.......................................................
23
2.3.3.1 C IR C U
IT.........................................................................
24
2.3.3.2 OPERATING P O I N T
.........................................................
24
2.3.33 TIME-DOMAIN RE SU LTS
....................................................
25
2.3.3.4 FREQUENCY-DOMAIN RE S U LTS
...........................................
26
2.3.4 S U M M A RY
.........................................................................
29
2.4 QUASI-STATIC MODELING OF THE TRANSFER CURRENT
....................................
30
2.4.1 PHYSICAL EFFECTS IN HETEROJUNCTION BIPOLAR TRANSISTORS . . . . .
30
2.4.1.1 QUASI-STATIC TRANSFER CURRENT EQUATION . . . . . . . . 30
2.4.1.2 CURRENT GAIN AND TRANSCONDUCTANCE . . . . . . . . . 32
2.4.1.3 OUTPUT CONDUCTANCE
...................................................
SB
2.4.1.4 ONSET OF HIGH-INJECTION EFFECTS . . . . . . . . . . . . 39
2.4.1.5 OPERATION AT HIGLI CURRENT DENSITIES . . . . . . . . . 43
2.4.1.6 SUM M ARY
.....................................................................
44
2.4.2 MODELING WITH THE GICCR
................................................... 44
2.4.2.1 INTRODUCTION TO THE G IC C R
.......................................
2.4.2.2 LIMITS OF THE G I C C R
................................................
2.4.2.3 WEIGHT FACTOR OF THE ZERO-BIAS CHARGE . . . . . . . .
2.4.2.4 BE DEPLETION CHARGE RELATED WEIGHT FACTOR . . . . . .
2.4.2.5 BC DEPLETION CHARGE RELATED WEIGHT FACTOR . . . . . .
2.4.2.6 WEIGHT FACTOR FOR THE MOBILE CHARGE . . . . . . . . .
2.4.3 COMPACT MODEL OF THE TRANSFER CU RREN T
....................................
2.4.3.1 LOW BIAS WEIGHTED CH ARG E
..........................................
2.4.3.2 WEIGHT FACTOR FOR THE LOW CURRENT MOBILE CHARGE . .
2.4.3.3 WEIGHT FACTORS FOR THE HIGH CURRENT MOBILE CHARGES .
2.4.3.4 TEMPERATURE M O D E L
...................................................
2.4.3.5 DISCUSSION OF DIFFERENT MODELING APPROACHES . . . . .
2.4.4 A COMPARATIVE STUDY OF WEIGHT FACTORS FROM DD AND HD SIM-
ULATION...........................................................................................
2.4.4.1 THE WEIGHT FUNCTION FROM HD SIMULATIONS . . . . . .
2.4. I 2 WEIGHT FA LTO S OF THE DEPLETION . . . . . . .
2.4.4.3 WEIGHT FACTORS OF THE MOBILE CHARGES . . . . . . . . .
2.4.4.4 S UM M ARY
.....................................................................
2.4.5 APPLICATION TO EXPERIMENTAL RESULTS
................................. ...
2.5 MODELING OF THE ELECTRIC FIELD IN THE BASE-COLLECTOR SPACE CHARGE
REGION
2.5.1 GENERAL MODEL APPROACH
............................................................
2.5.1.1 MOBILITY M
ODEL............................................................
2.5.1.2 OPERATING RANGES
.........................................................
2.5.13 LOW-CURRENT FIELD
.........................................................
2.5.1.4 ONSET OF HIGH-CURRENT E F FE C TS
....................................
2.5.2 HIGH-VOLTAGE C A SE
.......................................
...
2.5.2.1 LOW
INJECTION...............................................................
2.5.2.2 MEDIUM INJECTION AND HIGH INJECTION . . . . . . . . .
2.53 LOW-VOLTAGE C A S E
........................................................................
2.5.4 LOW-CURRENT TRANSIT TIM E
............................................................
2.5.5
IMPLEMENTATION...........................................................................
2.5.6 A
PPLICATION.................................................................................
2.5.6.1 ELECTRIC F I E L D
...............................................................
2.5. *.2 SMALL-SIGNAL PARAM
ETERS.........................................
2.5.6.3 APPLICATION TO MEASUREMENTS....................................
2.5.7 S U M M ARY
....................................................................................
2.6 MODELING OF THE SUBSTRATE COUPLING FOR TRANSISTORS WITH STI IN THE
ACTIVE REGION
..........................................................................................
2.6.1 IMPACT ON SMALL-SIGNAL
CHARACTERISTICS....................................
2.6.2 STRUCTURE AND EQUIVALENT
CIRCUIT................................................
2.63 GEOMETRY SCALING....................................
...................................
2.6.4 DC M
ODELING..............................................................................
2.6.5 APPLICATION TO TRA N SISTO
RS.........................................................
2.6.5.1 NUMERICAL
SIMULATIONS................................................
2.6.5.2 M EASUREM
ENTS............................................................
44
45
46
50
53
55
58
59
60
63
64
66
67
67
68
69
69
70
72
72
75
76
76
77
77
77
*2
*3
*3
*5
*5
*5
*7
87
8*
89
89
89
92
96
98
99
00
2.6.6 SUMMARY
.
........................................................................
...
100
3 COMPACT MODEL PARAMETER EXTRACTION METHODOLOGY 103
3.1 EXTRACTION FLOW . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . 104
3.2 JOINT EXTRACTION OF THE PARASITIC EMITTER AND THE THERMAL RESISTANCE
. 107
3.2.1 THEORY 107
3.2.2 MEASUREMENT SETU P
..........................................
... 109
3.2.3 EXTRACTION METHOD
.
..................................................................... I
L L
3.2.4 TEMPERATURE DEPENDENCE OF THE . . . . . . . I L L
3.2.5 THERMAL
RESISTANCE......................................................................
112
3.2.6 COLLECTOR RESISTANCE. . . . . . . . . . . . . . . . . . . . . . .
. 112
3.3 EXTRACTION OF THE WEIGHT
FACTORS........................................................ 114
3.3.1 LOW-BIAS REGION
................................................... ...
114
3.3.2 MEDIUM BIAS REGION . . . . . . . . . . . . . . . . . . . . . . .
118
3.3.3 HIGH CURRENT REGION
.
.................................................................. 119
3.4 GEOMETRY SCALING 122
3.4.1 GENERAL DEVICE SCA LIN G
............................................................... 122
3.4.1.1 T H E O R Y ...................................................
... 122
3.4.1.2 INTERPRETATION
............................................................ 124
3.4.1.3 EFFECTIVE EMITTER AREA . . . . . . . . . . . . . . . . . 125
3.4.1.4 METHOD D EM O N STRATIO N
............................................. 126
3.4.2 BIAS DEPENDENT LOW INJECTION S C A LIN G
.......................................
128
4 CHARACTERIZATION OF ADVANCED SIGE HBTS 133
4.1 DESCRIPTION OF THE
TECHNOLOGY...........................................................
134
4.2 TEST CHIP
DESCRIPTION..........................................................
.....
135
4.2.1 R
F
DEVICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
4.2.1.1 T R A N S I S T O R S . . . . . . . . . . . . . . . . . . . . .
. . 136
4.2.1.2 DEEMBEDDING STRUCTURES
.............................................
138
4.2.1.3 DC DEEMBEDDING
.
..........................................
...
139
4.2.2 DC STRUCTURES. . . . . . . . . . . . . . . . . . . . . . . . . . .
140
4.3 SELECTED RESULTS FROM PARAMETER EXTRACTION
......................................
143
4.3.1 OVERVIEW . . . . . . . . . . . . . . . . . . . . . . . . . . . .
143
4.3.2 DEVICE SCALING
.
..................................................................
...
144
43.3 EMITTER AND THERMAL RESISTANCES . . . . . . . . . . . . . . . . 146
4.3.4 DC PARAMETERS . . .
*
.
.
*
. . . . . . . .
. . . . . . . . .
*
147
4.3.4.1 TERMINAL C U R R E N TS
......................................................
147
4.3.4.2 TRANSFER C U R R E N T
.........................................................
149
4.4 MODEL RESULTS 150
4.4.1 DC
CHARACTERISTICS......................................................................
150
4.4.2 SMALL-SIGNAL OPERATION . . . . . . . .
151
4.4.2.1 AVAILABLE MEASUREMENTS . . . . . . . . . . . . . . . . 152
4.4.2.2 DERIVED Q U AN TITIE S
......................................................
153
4.4.2.3 SMALL-SIGNAL PARAM ETERS
.............................................
154
4.4.2.4 DYNAMIC EMITTER CURRENT CROWDING . . . . . . . . . . 154
4.4.3 TEMPERATURE D E P E N D E N C E ..................................
. . . . . . . 155
4.4.4
SCALING...........................................................................................
155
4.4.5 LARGE-SIGNAL MODELING . . . . . . . . . . . . . . . . . . . . . .
156
4.4.5.1 AVAILABLE MEASUREMENTS . . . . . . . . . . . . . . . . 156
4.4.5.2 STEADY-STATE SIMULATIONS
..........................................
158
4.4.5.3 SOURCE AND LOAD IMPEDANCE . . . . . . . . . . . . . . 158
4.4.5.4 VERIFICATION WITH SMALL-SIGNAL PARAMETERS . . . . . . 160
4.4
*
5.5 FREQUENCY-DOMAIN RE S U LTS
..........................................
162
4.4.*.6 TIME-DOMAIN RESU LTS
...................................................
163
4.4.6 S U M M A RY
.....................................................................................
164
5 SUMMARY AND OUTLOOK 165
BIBLIOGRAPHY 167
A MODNING 181
*.1 DERIVATIVES OF THE DIFFUSION CHARGE
..................................................... 181
*.2 QUASI-STATIC MODELING WITH THE GICCR
...............................................
183
*.2.1 MODELING VOLTAGE DROPS WITH THE GICCR . . . . . . . . . . . 183
*.3 MODEL IMPLEMENTATION OF THE ELECTRIC FIELD AT THE BASE-COLLECTOR
JUNCTIONL84
*.3.1 M O D ELP ARAM ETERS
...................................................
185
*.3.2 MODEL E Q U A TIO N S
................................................. . . . . . . . 185
*.3.3 VA*CODE 188
B MODE* VERIFICATION 1Q1
*.1 VERIFICATION OF CALIBRATION M E TH O D
S..................................................... 191
*.2 ADDITIONAL VERIFICATION P L O T S
................................................................. 193
*.2.1 DC RESULTS
....................................................................................
193
*.2.2 AC RESULTS . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. 194
*.2.2.1 DERIVED QUANTITIES . . . . . . . . . . . . . . . . . . . 194
*.2.2.2 SMALL-SIGNAL PARAMETERS
.
............................................. 194
*.2.3 DEVICE SCALING
..............................................................................
199
*.3 NON-LINEAR MODEL
VERIFICATION..............................................................
201
*.3.1 NUMBER OF HARMONICS IN HB SIM
ULATIONS................................. 201
*.3.2 MODEL V ERIFIC ATIO N ....................................... 203
|
| any_adam_object | 1 |
| author | Pawlak, Andreas 1982- |
| author_GND | (DE-588)1095551108 |
| author_facet | Pawlak, Andreas 1982- |
| author_role | aut |
| author_sort | Pawlak, Andreas 1982- |
| author_variant | a p ap |
| building | Verbundindex |
| bvnumber | BV043692736 |
| classification_rvk | ZN 4850 |
| ctrlnum | (DE-599)DNB1091079684 |
| dewey-full | 621.381528 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381528 |
| dewey-search | 621.381528 |
| dewey-sort | 3621.381528 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 1. Auflage |
| format | Thesis Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV043692736 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T07:32:39Z |
| institution | BVB |
| isbn | 9783959080286 395908028X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029105360 |
| open_access_boolean | |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | XIII, 220 Seiten Illustrationen 21 cm, 340 g |
| publishDate | 2015 |
| publishDateSearch | 2015 |
| publishDateSort | 2015 |
| publisher | TUDpress |
| record_format | marc |
| spelling | Pawlak, Andreas 1982- Verfasser (DE-588)1095551108 aut Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors Andreas Pawlak 1. Auflage Dresden TUDpress 2015 XIII, 220 Seiten Illustrationen 21 cm, 340 g txt rdacontent n rdamedia nc rdacarrier Dissertation Technische Universität Dresden 2015 Hochfrequenztransistor (DE-588)4123385-2 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Germanium (DE-588)4135644-5 gnd rswk-swf Heterobipolartransistor (DE-588)4254091-4 gnd rswk-swf Kleinsignalverhalten (DE-588)4164165-6 gnd rswk-swf Großsignalverhalten (DE-588)4158301-2 gnd rswk-swf Schaltungsentwurf (DE-588)4179389-4 gnd rswk-swf Bipolar Transistors SiGe HBTs Silicon-Germanium HBTs (DE-588)4113937-9 Hochschulschrift gnd-content Heterobipolartransistor (DE-588)4254091-4 s Silicium (DE-588)4077445-4 s Germanium (DE-588)4135644-5 s Schaltungsentwurf (DE-588)4179389-4 s Hochfrequenztransistor (DE-588)4123385-2 s Kleinsignalverhalten (DE-588)4164165-6 s Großsignalverhalten (DE-588)4158301-2 s DE-604 B:DE-101 application/pdf http://d-nb.info/1091079684/04 Inhaltsverzeichnis DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029105360&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Pawlak, Andreas 1982- Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors Hochfrequenztransistor (DE-588)4123385-2 gnd Silicium (DE-588)4077445-4 gnd Germanium (DE-588)4135644-5 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Kleinsignalverhalten (DE-588)4164165-6 gnd Großsignalverhalten (DE-588)4158301-2 gnd Schaltungsentwurf (DE-588)4179389-4 gnd |
| subject_GND | (DE-588)4123385-2 (DE-588)4077445-4 (DE-588)4135644-5 (DE-588)4254091-4 (DE-588)4164165-6 (DE-588)4158301-2 (DE-588)4179389-4 (DE-588)4113937-9 |
| title | Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors |
| title_auth | Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors |
| title_exact_search | Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors |
| title_full | Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors Andreas Pawlak |
| title_fullStr | Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors Andreas Pawlak |
| title_full_unstemmed | Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors Andreas Pawlak |
| title_short | Advanced modeling of Silicon-Germanium Heterojunction Bipolar Transistors |
| title_sort | advanced modeling of silicon germanium heterojunction bipolar transistors |
| topic | Hochfrequenztransistor (DE-588)4123385-2 gnd Silicium (DE-588)4077445-4 gnd Germanium (DE-588)4135644-5 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Kleinsignalverhalten (DE-588)4164165-6 gnd Großsignalverhalten (DE-588)4158301-2 gnd Schaltungsentwurf (DE-588)4179389-4 gnd |
| topic_facet | Hochfrequenztransistor Silicium Germanium Heterobipolartransistor Kleinsignalverhalten Großsignalverhalten Schaltungsentwurf Hochschulschrift |
| url | http://d-nb.info/1091079684/04 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029105360&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT pawlakandreas advancedmodelingofsilicongermaniumheterojunctionbipolartransistors |
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