Graphene in spintronics: fundamentals and applications
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Singapore
Pan Stanford Publishing
2016
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | xii, 294 Seiten Illustrationen, Diagramme |
| ISBN: | 9789814669566 |
Internformat
MARC
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| 100 | 1 | |a Inoue, Jun'ichirō |d 1947- |e Verfasser |0 (DE-588)173276741 |4 aut | |
| 245 | 1 | 0 | |a Graphene in spintronics |b fundamentals and applications |c Jun-ichiro Inoue, Ai Yamakage, Shuta Honda |
| 264 | 1 | |a Singapore |b Pan Stanford Publishing |c 2016 | |
| 300 | |a xii, 294 Seiten |b Illustrationen, Diagramme | ||
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| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Literaturangaben | ||
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| 650 | 4 | |a Graphene | |
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Datensatz im Suchindex
| _version_ | 1804176446210441216 |
|---|---|
| adam_text | Titel: Graphene in spintronics
Autor: Inoue, Jun ichirō
Jahr: 2016
Contents
Preface xi
1 Introduction 1
1.1 General Features of Graphene 2
1.1.1 From Carbon Elements to Carbon Lattices 2
1.1.2 Fabrication Method of Graphene Sheets 4
1.1.3 Graphene Lattice and Electronic Structure 5
1.1.4 Physical Properties 6
1.1.4.1 Electrical transport 6
1.1.4.2 Other properties 10
1.1.5 Potential Applicability of Graphene 11
1.2 Modern Electronics and Spintronics 11
1.2.1 Semiconductor Technology and Its Limitation 11
1.2.2 Spintronics: GMR and TMR 14
1.2.2.1 GMR and TMR 14
1.2.2.2 Spintronics applications of GMR and
TMR 18
1.2.2.3 Proposal of a spin FET 20
1.3 Graphene Junctions 22
1.3.1 Proposals of Novel Graphene Devices 22
1.3.2 Graphene Magnetoresistive Junctions 23
2 Basic Features of Graphene 29
2.1 Electronic Structure 29
2.2 Electronic States of the 7T-Band in Graphene 29
2.2.1 Graphene in Real and Reciprocal Spaces 30
2.2.2 Tight-Binding Model of Graphene 31
2.2.3 Dirac Fermions as Low-Lying Excitations 33
2.3 Electronic States of Bilayer Graphene 34
vi Contents
2.3.1 Gap Opening due to the Electric Field 36
2.3.2 Low-Energy Effective Model 36
2.4 Symmetries in Graphene 38
2.4.1 Unitary and Anti-Unitary Transformations 38
2.4.2 (Pseudo) Time Reversal Symmetry and
Backward Scattering 38
2.4.3 Rotational Symmetry and Degeneracy at the K
Point 41
2.4.4 Chiral Symmetry 45
2.5 Some Mathematics 45
2.6 Transport Properties 46
2.7 Bipolar Junction 47
2.7.1 Perfect Transmission in a Monolayer Graphene
Junction 48
2.7.2 Perfect Reflection in Bilayer Graphene Junction 50
2.8 Metal/Graphene Junction 53
2.9 Minimal Conductivity 56
2.10 Half-Integer Quantized Hall Effect 58
2.10.1 Landau Level in Conventional Electron Systems 58
2.10.2 Semiclassical Approach for the Quantum Hall
Effect 59
2.10.3 Landau Level in Graphene 61
2.10.4 Half-Quantized Hall Conductance in Graphene 61
2.11 From Graphene to Topological Insulators 62
2.11.1 Massive Dirac Fermions 63
2.11.2 Quantum Valley Hall Effect 63
2.11.3 Quantum Spin Hall Effect 64
2.11.4 Z2 Topological Insulator 65
3 Electronic Structures of Graphene and Graphene Contacts 69
3.1 Single- and Bilayer Graphene Sheets 69
3.1.1 Single-Layer Graphene Sheet 69
3.1.2 Bilayer Graphene 72
3.2 Graphene Nanoribbons 75
3.2.1 Energy Dispersion and Resonant States 77
3.2.2 Energy Band Gap 82
3.2.3 Hydrogen-Passivated Graphene Nanoribbons 82
3.2.4 Metal/Graphene Junctions 85
Contents vii
3.3 Magnetism 88
3.4 Metal and Insulator Contact with Graphene 91
3.4.1 Simple Model 91
3.4.2 Realistic Metal Contacts 92
3.4.3 Graphene on Silicon Carbide 97
3.4.4 Graphene Contact with Insulator 98
3.4.5 Hydrogen-Coated Graphene 99
3.5 Ripples and Curved Graphene 99
3.5.1 Ripples, Strain, and Spin-Orbit Interaction 100
3.5.2 Curved Graphene 101
4 Electrical and Spin Transport 109
4.1 Electrical and Spin Transport in Graphene 110
4.1.1 Conductivity and Mobility 110
4.1.2 Effects of Disorder 115
4.1.3 Spin Transport 119
4.1.4 Hall Effects 124
4.1.5 Other Transport Properties 126
4.2 Graphene Junctions and Field-Effect Transistors 127
4.2.1 Nonmagnetic Metal/Graphene/Nonmagnetic
Metal Junctions 127
4.2.2 Field-Effect Transistors 130
4.2.3 Contact Resistance 133
4.3 Spin Valves and Magnetoresistance 138
4.3.1 FM/Graphene/FM Junctions 139
4.3.2 Novel Magnetoresistance Theory 140
4.3.3 Nonlocal Spin Valve 141
4.3.4 Two-Terminal Spin Valve 143
4.4 Novel Graphene Devices 146
5 Spintronics MR Devices 157
5.1 Introduction 158
5.2 Giant Magnetoresistance 160
5.2.1 Magnetic Multilayers 160
5.2.2 GMR and Exchange Coupling 160
5.2.3 Mechanism of GMR 165
viii Contents
5.2.3.1 Spin-dependent resistivity in
ferromagnetic metals: Two-current
model 165
5.2.3.2 Spin-dependent resistivity in
multilayers 166
5.2.3.3 Phenomenological theory of GMR 168
5.2.3.4 Microscopic theory of GMR 169
5.2.3.5 Effects of spin flip scattering 170
5.2.4 Application of GMR: Spin Valve 170
5.3 Tunnel Magnetoresistance 172
5.3.1 Ferromagnetic Tunnel Junctions and TMR 172
5.3.2 A Phenomenological Theory of TMR 174
5.3.3 TMR of Several FTJs 177
5.3.3.1 Fe/MgO/Fe junctions 177
5.3.3.2 TMR in FTJ with half-metals 179
5.3.3.3 Granular TMR 180
5.3.4 Ingredients of TMR 181
5.3.4.1 Role of the transmission coefficient 181
5.3.4.2 Effects of the Fermi surface 182
5.3.4.3 Symmetry of the wave function 183
5.3.4.4 Effect of density of states 183
5.3.4.5 Effect of interfacial states 183
5.3.4.6 Effect of electron scattering 184
5.3.5 Application of TMR: Magnetoresistive Random
Access Memory 185
5.4 Current-Induced Magnetization Switching 186
5.4.1 Spin Transfer Torque 186
5.4.2 Magnetization Dynamics and Spin Pumping 189
5.5 Spin FET 191
5.5.1 Proposal of a Spin FET 191
5.5.2 Conductivity Mismatch 193
5.5.3 Some Experiments of Spin Injection and
Detection 195
6 Magnetoresistive Graphene Junctions: Realistic Models 203
6.1 Introduction 204
6.2 Magnetoresistance of Graphene Junctions: Model
Calculations 206
Contents ix
6.2.1 Artificial Graphene Junctions 206
6.2.2 Square-Lattice/Graphene/Square-Lattice
Junctions 208
6.2.2.1 Junction structure and model 208
6.2.2.2 Conductance and momentum-resolved
conductance 210
6.2.2.3 Magnetoresistance 214
6.2.3 Triangular-Lattice/Graphene/Triangular-
Lattice Junctions 215
6.2.4 Mode-Matching/Mode-Mismatching Model for
MR 219
6.3 Effects of Disorder 222
6.3.1 Models and Method of Calculation 223
6.3.2 Conductance in Nonmagnetic Disordered GNR
Junctions 224
6.3.3 MR in Ferromagnetic Disordered GNR
Junctions 228
6.4 Realistic Graphene Junctions 231
6.4.1 Introduction 231
6.4.2 Model and Method of Calculation 234
6.4.3 BCC Fe/Graphene/BCC Fe Junctions 238
6.4.3.1 Calculated results 238
6.4.3.2 Summary 242
6.4.4 FCC Ni/Graphene/FCC Ni Junctions 243
6.4.4.1 Effects of interlayer distance on MR 243
6.4.4.2 Effects of contact size 244
6.4.4.3 Effects of doping at contact 246
6.4.4.4 Material dependence 247
6.4.4.5 Effects of roughness 248
6.4.5 Mechanism of MR 249
6.4.6 Discussions and Conclusions 255
7 Summary 259
7.1 New Materials and New Fields of Science 259
7.2 GMRandTMRinSpintronics 260
7.3 Graphene in Spintronics 261
x Contents
Appendix 265
A.l Conductance Formalism for Numerical Calculation 265
A.1.1 Kubo-Greenwood and Lee-Fisher Formalisms 265
A.1.2 Recursive Green s Function Method 267
A.2 Alternative Method to Calculate Conductance and Its
Application 268
A.2.1 Model and Formalism 269
A.2.2 Calculated Results 272
A.2.2.1 Nonmagnetic Electrodes 273
A.2.2.2 Ferromagnetic electrodes 274
A,2.2.3 Effects of Magnetic Field 279
A.2.2.4 MR for Doped Junctions 279
A.2.3 Discussion and Summary 280
A.3 Spin-Orbit Interaction 281
Index 283
|
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| spelling | Inoue, Jun'ichirō 1947- Verfasser (DE-588)173276741 aut Graphene in spintronics fundamentals and applications Jun-ichiro Inoue, Ai Yamakage, Shuta Honda Singapore Pan Stanford Publishing 2016 xii, 294 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Literaturangaben Spintronics Graphene Spintronik (DE-588)7755384-6 gnd rswk-swf Graphen (DE-588)7591667-8 gnd rswk-swf Graphen (DE-588)7591667-8 s Spintronik (DE-588)7755384-6 s DE-604 Honda, Shuta Verfasser aut Yamakage, Ai Verfasser aut Erscheint auch als Online-Ausgabe 978-981-4669-57-3 DE-601 pdf/application http://www.gbv.de/dms/bowker/toc/9789814669566.pdf Inhaltsverzeichnis HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029092696&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Inoue, Jun'ichirō 1947- Honda, Shuta Yamakage, Ai Graphene in spintronics fundamentals and applications Spintronics Graphene Spintronik (DE-588)7755384-6 gnd Graphen (DE-588)7591667-8 gnd |
| subject_GND | (DE-588)7755384-6 (DE-588)7591667-8 |
| title | Graphene in spintronics fundamentals and applications |
| title_auth | Graphene in spintronics fundamentals and applications |
| title_exact_search | Graphene in spintronics fundamentals and applications |
| title_full | Graphene in spintronics fundamentals and applications Jun-ichiro Inoue, Ai Yamakage, Shuta Honda |
| title_fullStr | Graphene in spintronics fundamentals and applications Jun-ichiro Inoue, Ai Yamakage, Shuta Honda |
| title_full_unstemmed | Graphene in spintronics fundamentals and applications Jun-ichiro Inoue, Ai Yamakage, Shuta Honda |
| title_short | Graphene in spintronics |
| title_sort | graphene in spintronics fundamentals and applications |
| title_sub | fundamentals and applications |
| topic | Spintronics Graphene Spintronik (DE-588)7755384-6 gnd Graphen (DE-588)7591667-8 gnd |
| topic_facet | Spintronics Graphene Spintronik Graphen |
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