3D flash memories:
Gespeichert in:
| Weitere Verfasser: | |
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Dordrecht
Springer
[2016]
|
| Schlagworte: | |
| Online-Zugang: | BTU01 FHA01 FHI01 FHM01 FHN01 FHR01 FKE01 FRO01 HTW01 UBG01 UBM01 UBR01 UBT01 UBW01 UER01 UPA01 Volltext Inhaltsverzeichnis Abstract |
| Beschreibung: | 1 Online-Ressource (XXII, 380 Seiten, 396 illus., 304 illus. in color) |
| ISBN: | 9789401775120 |
| DOI: | 10.1007/978-94-017-7512-0 |
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Datensatz im Suchindex
| _version_ | 1804176259896311808 |
|---|---|
| adam_text | 3D FLASH MEMORIES
/
: 2016
TABLE OF CONTENTS / INHALTSVERZEICHNIS
DEDICATION PAGE
FOREWORD
PREFACE
INTRODUCTION
ABOUT THE EDITOR
ACKNOWLEDGEMENTS
1 THE BUSINESS OF NAND
2 RELIABILITY OF 3D NAND FLASH MEMORIES
3 3D STACKED NAND FLASH MEMORIES
4 3D CHARGE TRAP NAND FLASH MEMORIES
5 3D FLOATING GATE NAND FLASH MEMORIES
6 ADVANCED ARCHITECTURES FOR 3D NAND FLASH MEMORIES WITH VERTICAL
CHANNEL
7 3D VG-TYPE NAND FLASH MEMORIES
8 RRAM CROSS-POINT ARRAYS
9 3D MULTI-CHIP INTEGRATION AND PACKAGING TECHNOLOGY
10 BCH AND LDPC ERROR CORRECTION CODES FOR NAND FLASH MEMORIES
11 ADVANCED ALGEBRAIC AND GRAPH-BASED ECC SCHEMES FOR MODERN NVMS
12 SYSTEM-LEVEL CONSIDERATIONS ON DESIGN OF 3D NAND FLASH MEMORIES
INDEX
DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
3D FLASH MEMORIES
/
: 2016
ABSTRACT / INHALTSTEXT
THIS BOOK WALKS THE READER THROUGH THE NEXT STEP IN THE EVOLUTION OF
NAND FLASH MEMORY TECHNOLOGY, NAMELY THE DEVELOPMENT OF 3D FLASH
MEMORIES, IN WHICH MULTIPLE LAYERS OF MEMORY CELLS ARE GROWN WITHIN THE
SAME PIECE OF SILICON. IT DESCRIBES THEIR WORKING PRINCIPLES, DEVICE
ARCHITECTURES, FABRICATION TECHNIQUES AND PRACTICAL IMPLEMENTATIONS, AND
HIGHLIGHTS WHY 3D FLASH IS A BRAND NEW TECHNOLOGY. AFTER REVIEWING
MARKET TRENDS FOR BOTH NAND AND SOLID STATE DRIVES (SSDS), THE BOOK DIGS
INTO THE DETAILS OF THE FLASH MEMORY CELL ITSELF, COVERING BOTH FLOATING
GATE AND EMERGING CHARGE TRAP TECHNOLOGIES. THERE IS A PLETHORA OF
DIFFERENT MATERIALS AND VERTICAL INTEGRATION SCHEMES OUT THERE. NEW
MEMORY CELLS, NEW MATERIALS, NEW ARCHITECTURES (3D STACKED, BICS AND
P-BICS, 3D FG, 3D VG, 3D ADVANCED ARCHITECTURES); BASICALLY, EACH NAND
MANUFACTURER HAS ITS OWN SOLUTION. CHAPTER 3 TO CHAPTER 7 OFFER A BROAD
OVERVIEW OF HOW 3D CAN MATERIALIZE.THE 3D WAVE IS IMPACTING EMERGING
MEMORIES AS WELL AND CHAPTER 8 COVERS 3D RRAM (RESISTIVE RAM) CROSSPOINT
ARRAYS. VISUALIZING 3D STRUCTURES CAN BE A CHALLENGE FOR THE HUMAN
BRAIN: THIS IS WAY ALL THESE CHAPTERS CONTAIN A LOT OF BIRD’S-EYE
VIEWS AND CROSS SECTIONS ALONG THE 3 AXES. THE SECOND PART OF THE BOOK
IS DEVOTED TO OTHER IMPORTANT ASPECTS, SUCH AS ADVANCED PACKAGING
TECHNOLOGY (I.E. TSV IN CHAPTER 9) AND ERROR CORRECTION CODES, WHICH
HAVE BEEN LEVERAGED TO IMPROVE FLASH RELIABILITY FOR DECADES. CHAPTER 10
DESCRIBES THE EVOLUTION FROM LEGACY BCH TO THE MOST RECENT LDPC CODES,
WHILE CHAPTER 11 DEALS WITH SOME OF THE MOST RECENT ADVANCEMENTS IN THE
ECC FIELD. LAST BUT NOT LEAST, CHAPTER 12 LOOKS AT 3D FLASH MEMORIES
FROM A SYSTEM PERSPECTIVE.IS 14NM THE LAST STEP FOR PLANAR CELLS? CAN
100 LAYERS BE INTEGRATED WITHIN THE SAME PIECE OF SILICON? IS 4 BIT/CELL
POSSIBLE WITH 3D? WILL 3D BE RELIABLE ENOUGH FOR ENTERPRISE AND
DATACENTER APPLICATIONS? THESE ARE SOME OF THE QUESTIONS THAT THIS BOOK
HELPS ANSWERING BY PROVIDING INSIGHTS INTO 3D FLASH MEMORY DESIGN,
PROCESS TECHNOLOGY AND APPLICATIONS
DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
|
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| discipline | Informatik |
| doi_str_mv | 10.1007/978-94-017-7512-0 |
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| isbn | 9789401775120 |
| language | English |
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| spelling | 3D flash memories Rino Micheloni, editor Dordrecht Springer [2016] © 2016 1 Online-Ressource (XXII, 380 Seiten, 396 illus., 304 illus. in color) txt rdacontent c rdamedia cr rdacarrier Computer science Computer memory systems Electronic circuits Computer Science Memory Structures Electronic Circuits and Devices Circuits and Systems Informatik Micheloni, Rino edt Erscheint auch als Druckausgabe 978-94-017-7510-6 https://doi.org/10.1007/978-94-017-7512-0 Verlag URL des Erstveröffentlichers Volltext Springer Fremddatenuebernahme application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028993854&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis Springer Fremddatenuebernahme application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028993854&sequence=000003&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA Abstract |
| spellingShingle | 3D flash memories Computer science Computer memory systems Electronic circuits Computer Science Memory Structures Electronic Circuits and Devices Circuits and Systems Informatik |
| title | 3D flash memories |
| title_auth | 3D flash memories |
| title_exact_search | 3D flash memories |
| title_full | 3D flash memories Rino Micheloni, editor |
| title_fullStr | 3D flash memories Rino Micheloni, editor |
| title_full_unstemmed | 3D flash memories Rino Micheloni, editor |
| title_short | 3D flash memories |
| title_sort | 3d flash memories |
| topic | Computer science Computer memory systems Electronic circuits Computer Science Memory Structures Electronic Circuits and Devices Circuits and Systems Informatik |
| topic_facet | Computer science Computer memory systems Electronic circuits Computer Science Memory Structures Electronic Circuits and Devices Circuits and Systems Informatik |
| url | https://doi.org/10.1007/978-94-017-7512-0 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028993854&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028993854&sequence=000003&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT michelonirino 3dflashmemories |