The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Abschlussarbeit Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Berlin, Heidelberg
Springer
[2016]
|
| Schriftenreihe: | Springer Theses
|
| Schlagworte: | |
| Online-Zugang: | TUM01 UBT01 Volltext Inhaltsverzeichnis Abstract |
| Beschreibung: | 1 Online-Ressource (XIV, 59 p. 52 illus., 49 illus. in color) |
| ISBN: | 9783662496831 |
| DOI: | 10.1007/978-3-662-49683-1 |
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Datensatz im Suchindex
| _version_ | 1804176141292929024 |
|---|---|
| adam_text | THE SOURCE/DRAIN ENGINEERING OF NANOSCALE GERMANIUM-BASED MOS DEVICES
/ LI, ZHIQIANG
: 2016
TABLE OF CONTENTS / INHALTSVERZEICHNIS
INTRODUCTION
GE-BASED SCHOTTKY BARRIER HEIGHT MODULATION TECHNOLOGY
METAL GERMANIDE TECHNOLOGY
CONTACT RESISTANCE OF GE-BASED DEVICES
CONCLUSIONS
DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
THE SOURCE/DRAIN ENGINEERING OF NANOSCALE GERMANIUM-BASED MOS DEVICES
/ LI, ZHIQIANG
: 2016
ABSTRACT / INHALTSTEXT
THIS BOOK MAINLY FOCUSES ON REDUCING THE HIGH PARASITIC RESISTANCE IN
THE SOURCE/DRAIN OF GERMANIUM NMOSFET. WITH ADOPTING OF THE IMPLANTATION
AFTER GERMANIDE (IAG) TECHNIQUE, P AND SB CO-IMPLANTATION TECHNIQUE AND
MULTIPLE IMPLANTATION AND MULTIPLE ANNEALING (MIMA) TECHNIQUE, THE
ELECTRON SCHOTTKY BARRIER HEIGHT OF NIGE/GE CONTACT IS MODULATED TO
0.1EV, THE THERMAL STABILITY OF NIGE IS IMPROVED TO 600℃ AND THE
CONTACT RESISTIVITY OF METAL/N-GE CONTACT IS DRASTICALLY REDUCED TO
3.8×10−7Ω•CM2, RESPECTIVELY. BESIDES, A REDUCED SOURCE/DRAIN
PARASITIC RESISTANCE IS DEMONSTRATED IN THE FABRICATED GE NMOSFET.
READERS WILL FIND USEFUL INFORMATION ABOUT THE SOURCE/DRAIN ENGINEERING
TECHNIQUE FOR HIGH-PERFORMANCE CMOS DEVICES AT FUTURE TECHNOLOGY NODE
DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
|
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| spelling | Li, Zhiqiang Verfasser aut The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices Zhiqiang Li Berlin, Heidelberg Springer [2016] © 2016 1 Online-Ressource (XIV, 59 p. 52 illus., 49 illus. in color) txt rdacontent c rdamedia cr rdacarrier Springer Theses Dissertation Peking University, Beijing, China Physics Solid state physics Nanoscale science Nanoscience Nanostructures Semiconductors Electronic circuits Electronic Circuits and Devices Nanoscale Science and Technology Solid State Physics (DE-588)4113937-9 Hochschulschrift gnd-content Erscheint auch als Druckausgabe 978-3-662-49681-7 https://doi.org/10.1007/978-3-662-49683-1 Verlag URL des Erstveröffentlichers Volltext Springer Fremddatenuebernahme application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028920356&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis Springer Fremddatenuebernahme application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028920356&sequence=000003&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA Abstract |
| spellingShingle | Li, Zhiqiang The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices Physics Solid state physics Nanoscale science Nanoscience Nanostructures Semiconductors Electronic circuits Electronic Circuits and Devices Nanoscale Science and Technology Solid State Physics |
| subject_GND | (DE-588)4113937-9 |
| title | The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices |
| title_auth | The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices |
| title_exact_search | The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices |
| title_full | The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices Zhiqiang Li |
| title_fullStr | The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices Zhiqiang Li |
| title_full_unstemmed | The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices Zhiqiang Li |
| title_short | The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices |
| title_sort | the source drain engineering of nanoscale germanium based mos devices |
| topic | Physics Solid state physics Nanoscale science Nanoscience Nanostructures Semiconductors Electronic circuits Electronic Circuits and Devices Nanoscale Science and Technology Solid State Physics |
| topic_facet | Physics Solid state physics Nanoscale science Nanoscience Nanostructures Semiconductors Electronic circuits Electronic Circuits and Devices Nanoscale Science and Technology Solid State Physics Hochschulschrift |
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