Verfügbarkeit: Silicon nanowire transistors

Silicon nanowire transistors:

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Bibliographische Detailangaben
1. Verfasser:	Bindal, Ahmet (VerfasserIn)
Format:	Elektronisch E-Book
Sprache:	English
Veröffentlicht:	Cham Springer International Publishing 2016
Schlagworte:	Engineering Electronic circuits Nanotechnology Circuits and Systems Electronic Circuits and Devices Ingenieurwissenschaften
Online-Zugang:	BTU01 FAB01 FAW01 FHA01 FHI01 FHN01 FHR01 FKE01 FRO01 FWS01 FWS02 UBY01 Volltext Abstract Inhaltsverzeichnis
Beschreibung:	1 Online Ressource (xiv, 165 p. 145 illus., 140 illus. in color)
ISBN:	9783319271774
DOI:	10.1007/978-3-319-27177-4

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Datensatz im Suchindex

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adam_text	SILICON NANOWIRE TRANSISTORS / BINDAL, AHMET : 2016 ABSTRACT / INHALTSTEXT THIS BOOK DESCRIBES THE N AND P-CHANNEL SILICON NANOWIRE TRANSISTOR (SNT) DESIGNS WITH SINGLE AND DUAL-WORK FUNCTIONS, EMPHASIZING LOW STATIC AND DYNAMIC POWER CONSUMPTION. THE AUTHORS DESCRIBE A PROCESS FLOW FOR FABRICATION AND GENERATE SPICE MODELS FOR BUILDING VARIOUS DIGITAL AND ANALOG CIRCUITS. THESE INCLUDE AN SRAM, A BASEBAND SPREAD SPECTRUM TRANSMITTER, A NEURON CELL AND A FIELD PROGRAMMABLE GATE ARRAY (FPGA) PLATFORM IN THE DIGITAL DOMAIN, AS WELL AS HIGH BANDWIDTH SINGLE-STAGE AND OPERATIONAL AMPLIFIERS, RF COMMUNICATION CIRCUITS IN THE ANALOG DOMAIN, IN ORDER TO SHOW THIS TECHNOLOGY’S TRUE POTENTIAL FOR THE NEXT GENERATION VLSI. DESCRIBES SILICON NANOWIRE (SNW) TRANSISTORS, AS VERTICALLY CONSTRUCTED MOS N AND P-CHANNEL TRANSISTORS, WITH LOW STATIC AND DYNAMIC POWER CONSUMPTION AND SMALL LAYOUT FOOTPRINT; TARGETS SYSTEM-ON-CHIP (SOC) DESIGN, SUPPORTING VERY HIGH TRANSISTOR COUNT (ULSI), MINIMAL POWER CONSUMPTION REQUIRING INEXPENSIVE SUBSTRATES FOR PACKAGING; ENABLES FABRICATION OF DIFFERENT TYPES OF MEMORY ON THE SAME CHIP, SUCH AS CAPACITIVE CELLS AND TRANSISTORS WITH FLOATING GATES THAT CAN BE USED AS DRAMS AND FLASH MEMORIES DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT. SILICON NANOWIRE TRANSISTORS / BINDAL, AHMET : 2016 TABLE OF CONTENTS / INHALTSVERZEICHNIS DUAL WORK FUNCTION SILICON NANOWIRE MOS TRANSISTORS SINGLE WORK FUNCTION SILICON NANOWIRE MOS TRANSISTORS SPICE MODELING FOR ANALOG AND DIGITAL APPLICATIONS HIGH-SPEED ANALOG APPLICATIONS RADIO FREQUENCY (RF) APPLICATIONS SRAM MEGA CELL DESIGN FOR DIGITAL APPLICATIONS FIELD-PROGRAMMABLE-GATE-ARRAY (FPGA) INTEGRATE-AND-FIRE SPIKING (IFS) NEURON DIRECT SEQUENCE SPREAD SPECTRUM (DSSS) BASE-BAND TRANSMITTER.- DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
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language	English
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spellingShingle	Bindal, Ahmet Silicon nanowire transistors Engineering Electronic circuits Nanotechnology Circuits and Systems Electronic Circuits and Devices Ingenieurwissenschaften
title	Silicon nanowire transistors
title_auth	Silicon nanowire transistors
title_exact_search	Silicon nanowire transistors
title_full	Silicon nanowire transistors Ahmet Bindal, Sotoudeh Hamedi-Hagh
title_fullStr	Silicon nanowire transistors Ahmet Bindal, Sotoudeh Hamedi-Hagh
title_full_unstemmed	Silicon nanowire transistors Ahmet Bindal, Sotoudeh Hamedi-Hagh
title_short	Silicon nanowire transistors
title_sort	silicon nanowire transistors
topic	Engineering Electronic circuits Nanotechnology Circuits and Systems Electronic Circuits and Devices Ingenieurwissenschaften
topic_facet	Engineering Electronic circuits Nanotechnology Circuits and Systems Electronic Circuits and Devices Ingenieurwissenschaften
url	https://doi.org/10.1007/978-3-319-27177-4 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028840581&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028840581&sequence=000003&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA
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