Charge-based MOS transistor modeling: the EKV model for low-power and RF IC design
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Chichester, England
John Wiley
©2006
|
| Subjects: | |
| Online Access: | FRO01 UBG01 Volltext |
| Item Description: | Includes bibliographical references (pages 291-298) and index Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor |
| Physical Description: | 1 Online-Ressource (xxiii, 303 pages) |
| ISBN: | 9780470855461 0470855460 0470855452 9780470855454 047085541X 9780470855416 |
Staff View
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV043386577 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 160222s2006 |||| o||u| ||||||eng d | ||
| 020 | |a 9780470855461 |9 978-0-470-85546-1 | ||
| 020 | |a 0470855460 |9 0-470-85546-0 | ||
| 020 | |a 0470855452 |9 0-470-85545-2 | ||
| 020 | |a 9780470855454 |9 978-0-470-85545-4 | ||
| 020 | |a 047085541X |c alk. paper |9 0-470-85541-X | ||
| 020 | |a 9780470855416 |9 978-0-470-85541-6 | ||
| 024 | 7 | |a 10.1002/0470855460 |2 doi | |
| 035 | |a (ZDB-35-WIC)ocn180273386 | ||
| 035 | |a (OCoLC)180273386 | ||
| 035 | |a (DE-599)BVBBV043386577 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-861 | ||
| 082 | 0 | |a 621.3815/284 |2 22 | |
| 100 | 1 | |a Enz, Christian |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Charge-based MOS transistor modeling |b the EKV model for low-power and RF IC design |c Christian C. Enz, Eric A. Vittoz |
| 264 | 1 | |a Chichester, England |b John Wiley |c ©2006 | |
| 300 | |a 1 Online-Ressource (xxiii, 303 pages) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a Includes bibliographical references (pages 291-298) and index | ||
| 500 | |a Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor | ||
| 650 | 4 | |a Metal oxide semiconductors | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Transistors |2 bisacsh | |
| 650 | 7 | |a Metal oxide semiconductor field-effect transistors / Mathematical models |2 fast | |
| 650 | 7 | |a Metal oxide semiconductors / Mathematical models |2 fast | |
| 650 | 4 | |a Mathematisches Modell | |
| 650 | 4 | |a Metal oxide semiconductors / Mathematical models | |
| 650 | 4 | |a Metal oxide semiconductor field-effect transistors / Mathematical models | |
| 650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a MOS |0 (DE-588)4130209-6 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Vittoz, Eric A. |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u https://onlinelibrary.wiley.com/doi/book/10.1002/0470855460 |x Verlag |z URL des Erstveröffentlichers |3 Volltext |
| 912 | |a ZDB-35-WIC | ||
| 940 | 1 | |q UBG_PDA_WIC | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-028805161 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 966 | e | |u https://onlinelibrary.wiley.com/doi/book/10.1002/0470855460 |l FRO01 |p ZDB-35-WIC |q FRO_PDA_WIC |x Verlag |3 Volltext | |
| 966 | e | |u https://onlinelibrary.wiley.com/doi/book/10.1002/0470855460 |l UBG01 |p ZDB-35-WIC |q UBG_PDA_WIC |x Verlag |3 Volltext | |
Record in the Search Index
| _version_ | 1804175956036812800 |
|---|---|
| any_adam_object | |
| author | Enz, Christian |
| author_facet | Enz, Christian |
| author_role | aut |
| author_sort | Enz, Christian |
| author_variant | c e ce |
| building | Verbundindex |
| bvnumber | BV043386577 |
| collection | ZDB-35-WIC |
| ctrlnum | (ZDB-35-WIC)ocn180273386 (OCoLC)180273386 (DE-599)BVBBV043386577 |
| dewey-full | 621.3815/284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/284 |
| dewey-search | 621.3815/284 |
| dewey-sort | 3621.3815 3284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02784nmm a2200577zc 4500</leader><controlfield tag="001">BV043386577</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">160222s2006 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780470855461</subfield><subfield code="9">978-0-470-85546-1</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0470855460</subfield><subfield code="9">0-470-85546-0</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0470855452</subfield><subfield code="9">0-470-85545-2</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780470855454</subfield><subfield code="9">978-0-470-85545-4</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">047085541X</subfield><subfield code="c">alk. paper</subfield><subfield code="9">0-470-85541-X</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780470855416</subfield><subfield code="9">978-0-470-85541-6</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1002/0470855460</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-35-WIC)ocn180273386</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)180273386</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV043386577</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-861</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/284</subfield><subfield code="2">22</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Enz, Christian</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Charge-based MOS transistor modeling</subfield><subfield code="b">the EKV model for low-power and RF IC design</subfield><subfield code="c">Christian C. Enz, Eric A. Vittoz</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Chichester, England</subfield><subfield code="b">John Wiley</subfield><subfield code="c">©2006</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (xxiii, 303 pages)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references (pages 291-298) and index</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Transistors</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Metal oxide semiconductor field-effect transistors / Mathematical models</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Metal oxide semiconductors / Mathematical models</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Mathematisches Modell</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors / Mathematical models</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductor field-effect transistors / Mathematical models</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Vittoz, Eric A.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://onlinelibrary.wiley.com/doi/book/10.1002/0470855460</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveröffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-35-WIC</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">UBG_PDA_WIC</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-028805161</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://onlinelibrary.wiley.com/doi/book/10.1002/0470855460</subfield><subfield code="l">FRO01</subfield><subfield code="p">ZDB-35-WIC</subfield><subfield code="q">FRO_PDA_WIC</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://onlinelibrary.wiley.com/doi/book/10.1002/0470855460</subfield><subfield code="l">UBG01</subfield><subfield code="p">ZDB-35-WIC</subfield><subfield code="q">UBG_PDA_WIC</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV043386577 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:24:31Z |
| institution | BVB |
| isbn | 9780470855461 0470855460 0470855452 9780470855454 047085541X 9780470855416 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028805161 |
| oclc_num | 180273386 |
| open_access_boolean | |
| owner | DE-861 |
| owner_facet | DE-861 |
| physical | 1 Online-Ressource (xxiii, 303 pages) |
| psigel | ZDB-35-WIC UBG_PDA_WIC ZDB-35-WIC FRO_PDA_WIC ZDB-35-WIC UBG_PDA_WIC |
| publishDate | 2006 |
| publishDateSearch | 2006 |
| publishDateSort | 2006 |
| publisher | John Wiley |
| record_format | marc |
| spelling | Enz, Christian Verfasser aut Charge-based MOS transistor modeling the EKV model for low-power and RF IC design Christian C. Enz, Eric A. Vittoz Chichester, England John Wiley ©2006 1 Online-Ressource (xxiii, 303 pages) txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references (pages 291-298) and index Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor Metal oxide semiconductors TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Metal oxide semiconductor field-effect transistors / Mathematical models fast Metal oxide semiconductors / Mathematical models fast Mathematisches Modell Metal oxide semiconductors / Mathematical models Metal oxide semiconductor field-effect transistors / Mathematical models MOS (DE-588)4130209-6 gnd rswk-swf MOS (DE-588)4130209-6 s 1\p DE-604 Vittoz, Eric A. Sonstige oth https://onlinelibrary.wiley.com/doi/book/10.1002/0470855460 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Enz, Christian Charge-based MOS transistor modeling the EKV model for low-power and RF IC design Metal oxide semiconductors TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Metal oxide semiconductor field-effect transistors / Mathematical models fast Metal oxide semiconductors / Mathematical models fast Mathematisches Modell Metal oxide semiconductors / Mathematical models Metal oxide semiconductor field-effect transistors / Mathematical models MOS (DE-588)4130209-6 gnd |
| subject_GND | (DE-588)4130209-6 |
| title | Charge-based MOS transistor modeling the EKV model for low-power and RF IC design |
| title_auth | Charge-based MOS transistor modeling the EKV model for low-power and RF IC design |
| title_exact_search | Charge-based MOS transistor modeling the EKV model for low-power and RF IC design |
| title_full | Charge-based MOS transistor modeling the EKV model for low-power and RF IC design Christian C. Enz, Eric A. Vittoz |
| title_fullStr | Charge-based MOS transistor modeling the EKV model for low-power and RF IC design Christian C. Enz, Eric A. Vittoz |
| title_full_unstemmed | Charge-based MOS transistor modeling the EKV model for low-power and RF IC design Christian C. Enz, Eric A. Vittoz |
| title_short | Charge-based MOS transistor modeling |
| title_sort | charge based mos transistor modeling the ekv model for low power and rf ic design |
| title_sub | the EKV model for low-power and RF IC design |
| topic | Metal oxide semiconductors TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Metal oxide semiconductor field-effect transistors / Mathematical models fast Metal oxide semiconductors / Mathematical models fast Mathematisches Modell Metal oxide semiconductors / Mathematical models Metal oxide semiconductor field-effect transistors / Mathematical models MOS (DE-588)4130209-6 gnd |
| topic_facet | Metal oxide semiconductors TECHNOLOGY & ENGINEERING / Electronics / Transistors Metal oxide semiconductor field-effect transistors / Mathematical models Metal oxide semiconductors / Mathematical models Mathematisches Modell MOS |
| url | https://onlinelibrary.wiley.com/doi/book/10.1002/0470855460 |
| work_keys_str_mv | AT enzchristian chargebasedmostransistormodelingtheekvmodelforlowpowerandrficdesign AT vittozerica chargebasedmostransistormodelingtheekvmodelforlowpowerandrficdesign |