Charge-based MOS transistor modeling: the EKV model for low-power and RF IC design
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Chichester, England
John Wiley
©2006
|
| Schlagworte: | |
| Online-Zugang: | FRO01 UBG01 Volltext |
| Beschreibung: | Includes bibliographical references (pages 291-298) and index Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor |
| Beschreibung: | 1 Online-Ressource (xxiii, 303 pages) |
| ISBN: | 9780470855461 0470855460 0470855452 9780470855454 047085541X 9780470855416 |
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| 500 | |a Includes bibliographical references (pages 291-298) and index | ||
| 500 | |a Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor | ||
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| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Transistors |2 bisacsh | |
| 650 | 7 | |a Metal oxide semiconductor field-effect transistors / Mathematical models |2 fast | |
| 650 | 7 | |a Metal oxide semiconductors / Mathematical models |2 fast | |
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| 650 | 4 | |a Metal oxide semiconductors / Mathematical models | |
| 650 | 4 | |a Metal oxide semiconductor field-effect transistors / Mathematical models | |
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Datensatz im Suchindex
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| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
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| dewey-search | 621.3815/284 |
| dewey-sort | 3621.3815 3284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| isbn | 9780470855461 0470855460 0470855452 9780470855454 047085541X 9780470855416 |
| language | English |
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| spelling | Enz, Christian Verfasser aut Charge-based MOS transistor modeling the EKV model for low-power and RF IC design Christian C. Enz, Eric A. Vittoz Chichester, England John Wiley ©2006 1 Online-Ressource (xxiii, 303 pages) txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references (pages 291-298) and index Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor Metal oxide semiconductors TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Metal oxide semiconductor field-effect transistors / Mathematical models fast Metal oxide semiconductors / Mathematical models fast Mathematisches Modell Metal oxide semiconductors / Mathematical models Metal oxide semiconductor field-effect transistors / Mathematical models MOS (DE-588)4130209-6 gnd rswk-swf MOS (DE-588)4130209-6 s 1\p DE-604 Vittoz, Eric A. Sonstige oth https://onlinelibrary.wiley.com/doi/book/10.1002/0470855460 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Enz, Christian Charge-based MOS transistor modeling the EKV model for low-power and RF IC design Metal oxide semiconductors TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Metal oxide semiconductor field-effect transistors / Mathematical models fast Metal oxide semiconductors / Mathematical models fast Mathematisches Modell Metal oxide semiconductors / Mathematical models Metal oxide semiconductor field-effect transistors / Mathematical models MOS (DE-588)4130209-6 gnd |
| subject_GND | (DE-588)4130209-6 |
| title | Charge-based MOS transistor modeling the EKV model for low-power and RF IC design |
| title_auth | Charge-based MOS transistor modeling the EKV model for low-power and RF IC design |
| title_exact_search | Charge-based MOS transistor modeling the EKV model for low-power and RF IC design |
| title_full | Charge-based MOS transistor modeling the EKV model for low-power and RF IC design Christian C. Enz, Eric A. Vittoz |
| title_fullStr | Charge-based MOS transistor modeling the EKV model for low-power and RF IC design Christian C. Enz, Eric A. Vittoz |
| title_full_unstemmed | Charge-based MOS transistor modeling the EKV model for low-power and RF IC design Christian C. Enz, Eric A. Vittoz |
| title_short | Charge-based MOS transistor modeling |
| title_sort | charge based mos transistor modeling the ekv model for low power and rf ic design |
| title_sub | the EKV model for low-power and RF IC design |
| topic | Metal oxide semiconductors TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Metal oxide semiconductor field-effect transistors / Mathematical models fast Metal oxide semiconductors / Mathematical models fast Mathematisches Modell Metal oxide semiconductors / Mathematical models Metal oxide semiconductor field-effect transistors / Mathematical models MOS (DE-588)4130209-6 gnd |
| topic_facet | Metal oxide semiconductors TECHNOLOGY & ENGINEERING / Electronics / Transistors Metal oxide semiconductor field-effect transistors / Mathematical models Metal oxide semiconductors / Mathematical models Mathematisches Modell MOS |
| url | https://onlinelibrary.wiley.com/doi/book/10.1002/0470855460 |
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