Fundamentals of bias temperature instability in MOS transistors: characterization methods, process and materials impact, DC and AC modeling
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
New Delhi
Springer
[2016]
|
| Schriftenreihe: | Springer series in advanced microelectronics
volume 139 (2016) |
| Schlagworte: | |
| Online-Zugang: | BTU01 FAB01 FAW01 FHA01 FHI01 FHN01 FHR01 FKE01 FRO01 FWS01 FWS02 UBY01 URL des Erstveröffentlichers Inhaltsverzeichnis Abstract |
| Beschreibung: | 1 Online Ressource (xvi, 269 Seiten) |
| ISBN: | 9788132225089 |
| DOI: | 10.1007/978-81-322-2508-9 |
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Datensatz im Suchindex
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| adam_text | FUNDAMENTALS OF BIAS TEMPERATURE INSTABILITY IN MOS TRANSISTORS
/
: 2016
TABLE OF CONTENTS / INHALTSVERZEICHNIS
INTRODUCTION: BIAS TEMPERATURE INSTABILITY (BTI) IN N AND P CHANNEL
MOSFETS
CHARACTERIZATION METHODS FOR BTI DEGRADATION AND ASSOCIATED GATE
INSULATOR DEFECTS
PHYSICAL MECHANISM OF BTI DEGRADATION – DIRECT ESTIMATION OF TRAP
GENERATION AND TRAPPING
PHYSICAL MECHANISM OF BTI DEGRADATION –MODELING OF PROCESS AND
MATERIAL DEPENDENCE
REACTION-DIFFUSION MODEL
MODELING OF DC AND AC NBTI DEGRADATION AND RECOVERY FOR SION AND HKMG
MOSFETS
INDEX
DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
FUNDAMENTALS OF BIAS TEMPERATURE INSTABILITY IN MOS TRANSISTORS
/
: 2016
ABSTRACT / INHALTSTEXT
THIS BOOK AIMS TO COVER DIFFERENT ASPECTS OF BIAS TEMPERATURE
INSTABILITY (BTI). BTI REMAINS AS AN IMPORTANT RELIABILITY CONCERN FOR
CMOS TRANSISTORS AND CIRCUITS. DEVELOPMENT OF BTI RESILIENT TECHNOLOGY
RELIES ON UTILIZING ARTEFACT-FREE STRESS AND MEASUREMENT METHODS AND
SUITABLE PHYSICS-BASED MODELS FOR ACCURATE DETERMINATION OF DEGRADATION
AT END-OF-LIFE, AND UNDERSTANDING THE GATE INSULATOR PROCESS IMPACT ON
BTI. THIS BOOK DISCUSSES DIFFERENT ULTRA-FAST CHARACTERIZATION
TECHNIQUES FOR RECOVERY ARTEFACT FREE BTI MEASUREMENTS. IT ALSO COVERS
DIFFERENT DIRECT MEASUREMENTS TECHNIQUES TO ACCESS PRE-EXISTING AND
NEWLY GENERATED GATE INSULATOR TRAPS RESPONSIBLE FOR BTI. THE BOOK
PROVIDES A CONSISTENT PHYSICAL FRAMEWORK FOR NBTI AND PBTI RESPECTIVELY
FOR P- AND N- CHANNEL MOSFETS, CONSISTING OF TRAP GENERATION AND
TRAPPING. A PHYSICS-BASED COMPACT MODEL IS PRESENTED TO ESTIMATE
MEASURED BTI DEGRADATION IN PLANAR SI MOSFETS HAVING DIFFERENTLY
PROCESSED SION AND HKMG GATE INSULATORS, IN PLANAR SIGE MOSFETS AND ALSO
IN SI FINFETS. THE CONTENTS ALSO INCLUDE A DETAILED INVESTIGATION OF
THE GATE INSULATOR PROCESS DEPENDENCE OF BTI IN DIFFERENTLY PROCESSED
SION AND HKMG MOSFETS. THE BOOK THEN GOES ON TO DISCUSS
REACTION-DIFFUSION (RD) MODEL TO ESTIMATE GENERATION OF NEW TRAPS FOR DC
AND AC NBTI STRESS, AND TRANSIENT TRAP OCCUPANCY MODEL (TTOM) TO
ESTIMATE CHARGE OCCUPANCY OF GENERATED TRAPS AND THEIR CONTRIBUTION TO
BTI DEGRADATION. FINALLY, A COMPREHENSIVE NBTI MODELING FRAMEWORK
INCLUDING TTOM ENABLED RD MODEL AND HOLE TRAPPING TO PREDICT TIME
EVOLUTION OF BTI DEGRADATION AND RECOVERY DURING AND AFTER DC STRESS FOR
DIFFERENT STRESS AND RECOVERY BIASES AND TEMPERATURE, DURING CONSECUTIVE
ARBITRARY STRESS AND RECOVERY CYCLES, AND DURING AC STRESS AT DIFFERENT
FREQUENCY AND DUTY CYCLE. THE CONTENTS OF THIS BOOK SHOULD PROVE USEFUL
TO ACADEMIA AND PROFESSIONALS ALIKE
DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
|
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| record_format | marc |
| series | Springer series in advanced microelectronics |
| series2 | Springer series in advanced microelectronics |
| spellingShingle | Fundamentals of bias temperature instability in MOS transistors characterization methods, process and materials impact, DC and AC modeling Springer series in advanced microelectronics Engineering Solid state physics Electronics Microelectronics Electronic circuits Circuits and Systems Electronics and Microelectronics, Instrumentation Solid State Physics Ingenieurwissenschaften |
| subject_GND | (DE-588)4143413-4 |
| title | Fundamentals of bias temperature instability in MOS transistors characterization methods, process and materials impact, DC and AC modeling |
| title_auth | Fundamentals of bias temperature instability in MOS transistors characterization methods, process and materials impact, DC and AC modeling |
| title_exact_search | Fundamentals of bias temperature instability in MOS transistors characterization methods, process and materials impact, DC and AC modeling |
| title_full | Fundamentals of bias temperature instability in MOS transistors characterization methods, process and materials impact, DC and AC modeling Souvik Mahapatra, editor |
| title_fullStr | Fundamentals of bias temperature instability in MOS transistors characterization methods, process and materials impact, DC and AC modeling Souvik Mahapatra, editor |
| title_full_unstemmed | Fundamentals of bias temperature instability in MOS transistors characterization methods, process and materials impact, DC and AC modeling Souvik Mahapatra, editor |
| title_short | Fundamentals of bias temperature instability in MOS transistors |
| title_sort | fundamentals of bias temperature instability in mos transistors characterization methods process and materials impact dc and ac modeling |
| title_sub | characterization methods, process and materials impact, DC and AC modeling |
| topic | Engineering Solid state physics Electronics Microelectronics Electronic circuits Circuits and Systems Electronics and Microelectronics, Instrumentation Solid State Physics Ingenieurwissenschaften |
| topic_facet | Engineering Solid state physics Electronics Microelectronics Electronic circuits Circuits and Systems Electronics and Microelectronics, Instrumentation Solid State Physics Ingenieurwissenschaften Aufsatzsammlung |
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