Silicon RF power MOSFETS:
Gespeichert in:
1. Verfasser: | |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Singapore
World Scientific
c2005
|
Schlagworte: | |
Online-Zugang: | FAW01 FAW02 Volltext |
Beschreibung: | Includes bibliographical references and index Preface; Contents; Chapter 1 Introduction; Chapter 2 RF Power Amplifiers; Chapter 3 MOSFET PHYSICS; Chapter 4 Lateral-Diffused MOSFETs; Chapter 5 Vertical-Diffused MOSFETs; Chapter 6 Charge-Coupled MOSFETs; Chapter 7 Super-Linear MOSFETs; Chapter 8 Planar Super-Linear MOSFETs; Chapter 9 Dual Trench MOSFETs; Chapter 10 Hot Carrier Injection Instability; Chapter 11 Synopsis; Appendix; Index The world-wide proliferation of cellular networks has revolutionizedtelecommunication systems. The transition from Analog to Digital RFtechnology enabled substantial increase in voice traffic usingavailable spectrum, and subsequently the delivery of digitally basedtext messaging, graphics and even streaming video |
Beschreibung: | 1 Online-Ressource (xvi, 302 p.) |
ISBN: | 1281881007 9781281881007 9789812561213 9789812569325 9812561218 9812569324 |
Internformat
MARC
LEADER | 00000nmm a2200000zc 4500 | ||
---|---|---|---|
001 | BV043156457 | ||
003 | DE-604 | ||
005 | 00000000000000.0 | ||
007 | cr|uuu---uuuuu | ||
008 | 151126s2005 |||| o||u| ||||||eng d | ||
020 | |a 1281881007 |9 1-281-88100-7 | ||
020 | |a 9781281881007 |9 978-1-281-88100-7 | ||
020 | |a 9789812561213 |9 978-981-256-121-3 | ||
020 | |a 9789812569325 |c electronic bk. |9 978-981-256-932-5 | ||
020 | |a 9812561218 |9 981-256-121-8 | ||
020 | |a 9812561218 |9 981-256-121-8 | ||
020 | |a 9812569324 |c electronic bk. |9 981-256-932-4 | ||
035 | |a (OCoLC)560092203 | ||
035 | |a (DE-599)BVBBV043156457 | ||
040 | |a DE-604 |b ger |e aacr | ||
041 | 0 | |a eng | |
049 | |a DE-1046 |a DE-1047 | ||
082 | 0 | |a 621.3815/284 |2 22 | |
100 | 1 | |a Baliga, B. Jayant |e Verfasser |4 aut | |
245 | 1 | 0 | |a Silicon RF power MOSFETS |c B. Jayant Baliga |
264 | 1 | |a Singapore |b World Scientific |c c2005 | |
300 | |a 1 Online-Ressource (xvi, 302 p.) | ||
336 | |b txt |2 rdacontent | ||
337 | |b c |2 rdamedia | ||
338 | |b cr |2 rdacarrier | ||
500 | |a Includes bibliographical references and index | ||
500 | |a Preface; Contents; Chapter 1 Introduction; Chapter 2 RF Power Amplifiers; Chapter 3 MOSFET PHYSICS; Chapter 4 Lateral-Diffused MOSFETs; Chapter 5 Vertical-Diffused MOSFETs; Chapter 6 Charge-Coupled MOSFETs; Chapter 7 Super-Linear MOSFETs; Chapter 8 Planar Super-Linear MOSFETs; Chapter 9 Dual Trench MOSFETs; Chapter 10 Hot Carrier Injection Instability; Chapter 11 Synopsis; Appendix; Index | ||
500 | |a The world-wide proliferation of cellular networks has revolutionizedtelecommunication systems. The transition from Analog to Digital RFtechnology enabled substantial increase in voice traffic usingavailable spectrum, and subsequently the delivery of digitally basedtext messaging, graphics and even streaming video | ||
650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Transistors |2 bisacsh | |
650 | 7 | |a Field-effect transistors |2 fast | |
650 | 7 | |a Metal oxide semiconductor field-effect transistors |2 fast | |
650 | 4 | |a Metal oxide semiconductor field-effect transistors | |
650 | 4 | |a Field-effect transistors | |
856 | 4 | 0 | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=161353 |x Aggregator |3 Volltext |
912 | |a ZDB-4-EBA | ||
999 | |a oai:aleph.bib-bvb.de:BVB01-028580648 | ||
966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=161353 |l FAW01 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=161353 |l FAW02 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext |
Datensatz im Suchindex
_version_ | 1804175622134562816 |
---|---|
any_adam_object | |
author | Baliga, B. Jayant |
author_facet | Baliga, B. Jayant |
author_role | aut |
author_sort | Baliga, B. Jayant |
author_variant | b j b bj bjb |
building | Verbundindex |
bvnumber | BV043156457 |
collection | ZDB-4-EBA |
ctrlnum | (OCoLC)560092203 (DE-599)BVBBV043156457 |
dewey-full | 621.3815/284 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/284 |
dewey-search | 621.3815/284 |
dewey-sort | 3621.3815 3284 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Electronic eBook |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02649nmm a2200481zc 4500</leader><controlfield tag="001">BV043156457</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">151126s2005 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1281881007</subfield><subfield code="9">1-281-88100-7</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781281881007</subfield><subfield code="9">978-1-281-88100-7</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789812561213</subfield><subfield code="9">978-981-256-121-3</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789812569325</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">978-981-256-932-5</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812561218</subfield><subfield code="9">981-256-121-8</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812561218</subfield><subfield code="9">981-256-121-8</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812569324</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">981-256-932-4</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)560092203</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV043156457</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1046</subfield><subfield code="a">DE-1047</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/284</subfield><subfield code="2">22</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Baliga, B. Jayant</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Silicon RF power MOSFETS</subfield><subfield code="c">B. Jayant Baliga</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Singapore</subfield><subfield code="b">World Scientific</subfield><subfield code="c">c2005</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (xvi, 302 p.)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Preface; Contents; Chapter 1 Introduction; Chapter 2 RF Power Amplifiers; Chapter 3 MOSFET PHYSICS; Chapter 4 Lateral-Diffused MOSFETs; Chapter 5 Vertical-Diffused MOSFETs; Chapter 6 Charge-Coupled MOSFETs; Chapter 7 Super-Linear MOSFETs; Chapter 8 Planar Super-Linear MOSFETs; Chapter 9 Dual Trench MOSFETs; Chapter 10 Hot Carrier Injection Instability; Chapter 11 Synopsis; Appendix; Index</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">The world-wide proliferation of cellular networks has revolutionizedtelecommunication systems. The transition from Analog to Digital RFtechnology enabled substantial increase in voice traffic usingavailable spectrum, and subsequently the delivery of digitally basedtext messaging, graphics and even streaming video</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Transistors</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Field-effect transistors</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Metal oxide semiconductor field-effect transistors</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductor field-effect transistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Field-effect transistors</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=161353</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-028580648</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=161353</subfield><subfield code="l">FAW01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=161353</subfield><subfield code="l">FAW02</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
id | DE-604.BV043156457 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T07:19:13Z |
institution | BVB |
isbn | 1281881007 9781281881007 9789812561213 9789812569325 9812561218 9812569324 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028580648 |
oclc_num | 560092203 |
open_access_boolean | |
owner | DE-1046 DE-1047 |
owner_facet | DE-1046 DE-1047 |
physical | 1 Online-Ressource (xvi, 302 p.) |
psigel | ZDB-4-EBA ZDB-4-EBA FAW_PDA_EBA |
publishDate | 2005 |
publishDateSearch | 2005 |
publishDateSort | 2005 |
publisher | World Scientific |
record_format | marc |
spelling | Baliga, B. Jayant Verfasser aut Silicon RF power MOSFETS B. Jayant Baliga Singapore World Scientific c2005 1 Online-Ressource (xvi, 302 p.) txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references and index Preface; Contents; Chapter 1 Introduction; Chapter 2 RF Power Amplifiers; Chapter 3 MOSFET PHYSICS; Chapter 4 Lateral-Diffused MOSFETs; Chapter 5 Vertical-Diffused MOSFETs; Chapter 6 Charge-Coupled MOSFETs; Chapter 7 Super-Linear MOSFETs; Chapter 8 Planar Super-Linear MOSFETs; Chapter 9 Dual Trench MOSFETs; Chapter 10 Hot Carrier Injection Instability; Chapter 11 Synopsis; Appendix; Index The world-wide proliferation of cellular networks has revolutionizedtelecommunication systems. The transition from Analog to Digital RFtechnology enabled substantial increase in voice traffic usingavailable spectrum, and subsequently the delivery of digitally basedtext messaging, graphics and even streaming video TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Field-effect transistors fast Metal oxide semiconductor field-effect transistors fast Metal oxide semiconductor field-effect transistors Field-effect transistors http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=161353 Aggregator Volltext |
spellingShingle | Baliga, B. Jayant Silicon RF power MOSFETS TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Field-effect transistors fast Metal oxide semiconductor field-effect transistors fast Metal oxide semiconductor field-effect transistors Field-effect transistors |
title | Silicon RF power MOSFETS |
title_auth | Silicon RF power MOSFETS |
title_exact_search | Silicon RF power MOSFETS |
title_full | Silicon RF power MOSFETS B. Jayant Baliga |
title_fullStr | Silicon RF power MOSFETS B. Jayant Baliga |
title_full_unstemmed | Silicon RF power MOSFETS B. Jayant Baliga |
title_short | Silicon RF power MOSFETS |
title_sort | silicon rf power mosfets |
topic | TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Field-effect transistors fast Metal oxide semiconductor field-effect transistors fast Metal oxide semiconductor field-effect transistors Field-effect transistors |
topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Transistors Field-effect transistors Metal oxide semiconductor field-effect transistors |
url | http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=161353 |
work_keys_str_mv | AT baligabjayant siliconrfpowermosfets |