Modeling and design techniques for RF power amplifiers:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Hoboken, N.J.
Wiley-Interscience
c2008
|
| Schlagworte: | |
| Online-Zugang: | FAW01 FAW02 Volltext Buchcover |
| Beschreibung: | Includes bibliographical references and index 1 - Introduction -- - Semiconductor Technology and RF Power Amplifier Design -- - Device Modeling -- - Power Amplifier IC Design -- - Power Amplifier Linearity -- - Modulation Schemes -- - Circuit Simulation -- - Load-Pull Measurements -- - 2 - Device Modeling for CAD -- - Bipolar Junction and Heterojunction Bipolar Transistors -- - Bipolar Device Models -- - The Ebers-Moll Model -- - The Gummel-Poon Model -- - The VBIC Model -- - MEXTRAM -- - HICUM -- - MOSFET Device Physics -- - MOSFET Device Models -- - The Level 1 Model -- - The Level 2 and Level 3 Models -- - BSIM -- - The BSIM2 and HSPICE Level 28 Models -- - BSIM3 -- - MOS Model 9 and MOS Model 11 -- - BSIM4 -- - 3 - Empirical Modeling of Bipolar Devices -- - Modeling the HBT versus the BJT -- - Parameter Extraction -- - Motivation for an Empirical Bipolar Device Model -- - Physics-Based and Empirical Models -- - Compatibility between Large- and Small-Signal Models -- - Model Construction and Parameter Extraction -- - Current Source Model -- - Current Source Model Parameter Extraction -- - Extraction of Intrinsic Capacitances -- - Extraction of Base Resistance -- - Parameter Extraction Procedure -- - Temperature-Dependent InGaP/GaAs HBT Large-Signal Model -- - Empirical Si BJT Large-Signal Model -- - Extension of the Empirical Modeling Method to the SiGe HBT-- - 4 - Scalable Modeling of RF MOSFETS -- - Introduction -- - NQS Effects -- - Distributed Gate Resistance -- - Distributed Substrate Resistance -- - Scalable Modified BSIM3v3 Model -- - Scalability of MOSFET Model -- - Extraction of Small-Signal Model Parameters -- - Scalable Substrate Network Modeling -- - Modified BSIM3v3 Model -- - 5 - Power Amplifier IC Design -- - Power Amplifier Design Methodology -- - Classes of Operation -- - Performance Metrics -- - Thermal Instability and Ballasting -- - 6 - Power Amplifier Design in Silicon -- - A 2.4-GHz High-Efficiency SiGe HBT Power Amplifier -- - Circuit Design Considerations -- - Analysis of Ballasting for SiGe HBT Power Amplifiers -- - Harmonic Suppression Filter and Output Match Network -- - Performance of the Power Amplifier Module -- - RF Power Amplifier Design Using Device Periphery Adjustment-- - Analysis of the Device Periphery Adjustment Technique-- - 1.9-GHz CMOS Power Amplifier -- - 1.9-GHz CDMA/PCS SiGe HBT Power Amplifier -- - Nonlinear Term Cancellation for Linearity Improvement The book covers RF power amplifier design, from device and modeling considerations to advanced circuit design architectures and techniques. It focuses on recent developments and advanced topics in this area, including numerous practical designs to back the theoretical considerations. It presents the challenges in designing power amplifiers in silicon and helps the reader improve the efficiency of linear power amplifiers, and design more accurate compact device models, with faster extraction routines, to create cost effective and reliable circuits |
| Beschreibung: | 1 Online-Ressource (xi, 206 p.) |
| ISBN: | 047022830X 0470228318 9780470228302 9780470228319 |
Internformat
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| 100 | 1 | |a Raghavan, Arvind |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Modeling and design techniques for RF power amplifiers |c Arvind Raghavan, Nuttapong Srirattana, Joy Laskar |
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| 500 | |a Includes bibliographical references and index | ||
| 500 | |a 1 - Introduction -- - Semiconductor Technology and RF Power Amplifier Design -- - Device Modeling -- - Power Amplifier IC Design -- - Power Amplifier Linearity -- - Modulation Schemes -- - Circuit Simulation -- - Load-Pull Measurements -- - 2 - Device Modeling for CAD -- - Bipolar Junction and Heterojunction Bipolar Transistors -- - Bipolar Device Models -- - The Ebers-Moll Model -- - The Gummel-Poon Model -- - The VBIC Model -- - MEXTRAM -- - HICUM -- - MOSFET Device Physics -- - MOSFET Device Models -- - The Level 1 Model -- - The Level 2 and Level 3 Models -- - BSIM -- - The BSIM2 and HSPICE Level 28 Models -- - BSIM3 -- - MOS Model 9 and MOS Model 11 -- - BSIM4 -- - 3 - Empirical Modeling of Bipolar Devices -- - Modeling the HBT versus the BJT -- - Parameter Extraction -- - Motivation for an Empirical Bipolar Device Model -- - Physics-Based and Empirical Models -- - Compatibility between Large- and Small-Signal Models -- - Model Construction and Parameter Extraction -- | ||
| 500 | |a - Current Source Model -- - Current Source Model Parameter Extraction -- - Extraction of Intrinsic Capacitances -- - Extraction of Base Resistance -- - Parameter Extraction Procedure -- - Temperature-Dependent InGaP/GaAs HBT Large-Signal Model -- - Empirical Si BJT Large-Signal Model -- - Extension of the Empirical Modeling Method to the SiGe HBT-- - 4 - Scalable Modeling of RF MOSFETS -- - Introduction -- - NQS Effects -- - Distributed Gate Resistance -- - Distributed Substrate Resistance -- - Scalable Modified BSIM3v3 Model -- - Scalability of MOSFET Model -- - Extraction of Small-Signal Model Parameters -- - Scalable Substrate Network Modeling -- - Modified BSIM3v3 Model -- - 5 - Power Amplifier IC Design -- - Power Amplifier Design Methodology -- - Classes of Operation -- - Performance Metrics -- - Thermal Instability and Ballasting -- - 6 - Power Amplifier Design in Silicon -- - A 2.4-GHz High-Efficiency SiGe HBT Power Amplifier -- - Circuit Design Considerations -- | ||
| 500 | |a - Analysis of Ballasting for SiGe HBT Power Amplifiers -- - Harmonic Suppression Filter and Output Match Network -- - Performance of the Power Amplifier Module -- - RF Power Amplifier Design Using Device Periphery Adjustment-- - Analysis of the Device Periphery Adjustment Technique-- - 1.9-GHz CMOS Power Amplifier -- - 1.9-GHz CDMA/PCS SiGe HBT Power Amplifier -- - Nonlinear Term Cancellation for Linearity Improvement | ||
| 500 | |a The book covers RF power amplifier design, from device and modeling considerations to advanced circuit design architectures and techniques. It focuses on recent developments and advanced topics in this area, including numerous practical designs to back the theoretical considerations. It presents the challenges in designing power amplifiers in silicon and helps the reader improve the efficiency of linear power amplifiers, and design more accurate compact device models, with faster extraction routines, to create cost effective and reliable circuits | ||
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| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Mobile & Wireless Communications |2 bisacsh | |
| 650 | 4 | |a Power amplifiers |x Design and construction | |
| 650 | 4 | |a Amplifiers, Radio frequency | |
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| 700 | 1 | |a Laskar, Joy |e Sonstige |4 oth | |
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Datensatz im Suchindex
| _version_ | 1804175612203499520 |
|---|---|
| any_adam_object | 1 |
| author | Raghavan, Arvind |
| author_facet | Raghavan, Arvind |
| author_role | aut |
| author_sort | Raghavan, Arvind |
| author_variant | a r ar |
| building | Verbundindex |
| bvnumber | BV043151766 |
| classification_rvk | ZN 5830 ZN 6840 |
| collection | ZDB-4-EBA |
| ctrlnum | (OCoLC)608622281 (DE-599)BVBBV043151766 |
| dewey-full | 621.384/12 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.384/12 |
| dewey-search | 621.384/12 |
| dewey-sort | 3621.384 212 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| id | DE-604.BV043151766 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:19:03Z |
| institution | BVB |
| isbn | 047022830X 0470228318 9780470228302 9780470228319 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028575957 |
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| owner_facet | DE-1046 DE-1047 |
| physical | 1 Online-Ressource (xi, 206 p.) |
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| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | Wiley-Interscience |
| record_format | marc |
| spelling | Raghavan, Arvind Verfasser aut Modeling and design techniques for RF power amplifiers Arvind Raghavan, Nuttapong Srirattana, Joy Laskar Hoboken, N.J. Wiley-Interscience c2008 1 Online-Ressource (xi, 206 p.) txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references and index 1 - Introduction -- - Semiconductor Technology and RF Power Amplifier Design -- - Device Modeling -- - Power Amplifier IC Design -- - Power Amplifier Linearity -- - Modulation Schemes -- - Circuit Simulation -- - Load-Pull Measurements -- - 2 - Device Modeling for CAD -- - Bipolar Junction and Heterojunction Bipolar Transistors -- - Bipolar Device Models -- - The Ebers-Moll Model -- - The Gummel-Poon Model -- - The VBIC Model -- - MEXTRAM -- - HICUM -- - MOSFET Device Physics -- - MOSFET Device Models -- - The Level 1 Model -- - The Level 2 and Level 3 Models -- - BSIM -- - The BSIM2 and HSPICE Level 28 Models -- - BSIM3 -- - MOS Model 9 and MOS Model 11 -- - BSIM4 -- - 3 - Empirical Modeling of Bipolar Devices -- - Modeling the HBT versus the BJT -- - Parameter Extraction -- - Motivation for an Empirical Bipolar Device Model -- - Physics-Based and Empirical Models -- - Compatibility between Large- and Small-Signal Models -- - Model Construction and Parameter Extraction -- - Current Source Model -- - Current Source Model Parameter Extraction -- - Extraction of Intrinsic Capacitances -- - Extraction of Base Resistance -- - Parameter Extraction Procedure -- - Temperature-Dependent InGaP/GaAs HBT Large-Signal Model -- - Empirical Si BJT Large-Signal Model -- - Extension of the Empirical Modeling Method to the SiGe HBT-- - 4 - Scalable Modeling of RF MOSFETS -- - Introduction -- - NQS Effects -- - Distributed Gate Resistance -- - Distributed Substrate Resistance -- - Scalable Modified BSIM3v3 Model -- - Scalability of MOSFET Model -- - Extraction of Small-Signal Model Parameters -- - Scalable Substrate Network Modeling -- - Modified BSIM3v3 Model -- - 5 - Power Amplifier IC Design -- - Power Amplifier Design Methodology -- - Classes of Operation -- - Performance Metrics -- - Thermal Instability and Ballasting -- - 6 - Power Amplifier Design in Silicon -- - A 2.4-GHz High-Efficiency SiGe HBT Power Amplifier -- - Circuit Design Considerations -- - Analysis of Ballasting for SiGe HBT Power Amplifiers -- - Harmonic Suppression Filter and Output Match Network -- - Performance of the Power Amplifier Module -- - RF Power Amplifier Design Using Device Periphery Adjustment-- - Analysis of the Device Periphery Adjustment Technique-- - 1.9-GHz CMOS Power Amplifier -- - 1.9-GHz CDMA/PCS SiGe HBT Power Amplifier -- - Nonlinear Term Cancellation for Linearity Improvement The book covers RF power amplifier design, from device and modeling considerations to advanced circuit design architectures and techniques. It focuses on recent developments and advanced topics in this area, including numerous practical designs to back the theoretical considerations. It presents the challenges in designing power amplifiers in silicon and helps the reader improve the efficiency of linear power amplifiers, and design more accurate compact device models, with faster extraction routines, to create cost effective and reliable circuits TECHNOLOGY & ENGINEERING / Radio bisacsh TECHNOLOGY & ENGINEERING / Mobile & Wireless Communications bisacsh Power amplifiers Design and construction Amplifiers, Radio frequency Schaltungsentwurf (DE-588)4179389-4 gnd rswk-swf Hochfrequenzverstärker (DE-588)4160154-3 gnd rswk-swf Hochfrequenzverstärker (DE-588)4160154-3 s Schaltungsentwurf (DE-588)4179389-4 s 1\p DE-604 Srirattana, Nuttapong Sonstige oth Laskar, Joy Sonstige oth Erscheint auch als Druck-Ausgabe, Hardcover 0-471-71746-0 Erscheint auch als Druck-Ausgabe, Hardcover 978-0-471-71746-1 http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=219801 Aggregator Volltext SWB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028575957&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Buchcover 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Raghavan, Arvind Modeling and design techniques for RF power amplifiers TECHNOLOGY & ENGINEERING / Radio bisacsh TECHNOLOGY & ENGINEERING / Mobile & Wireless Communications bisacsh Power amplifiers Design and construction Amplifiers, Radio frequency Schaltungsentwurf (DE-588)4179389-4 gnd Hochfrequenzverstärker (DE-588)4160154-3 gnd |
| subject_GND | (DE-588)4179389-4 (DE-588)4160154-3 |
| title | Modeling and design techniques for RF power amplifiers |
| title_auth | Modeling and design techniques for RF power amplifiers |
| title_exact_search | Modeling and design techniques for RF power amplifiers |
| title_full | Modeling and design techniques for RF power amplifiers Arvind Raghavan, Nuttapong Srirattana, Joy Laskar |
| title_fullStr | Modeling and design techniques for RF power amplifiers Arvind Raghavan, Nuttapong Srirattana, Joy Laskar |
| title_full_unstemmed | Modeling and design techniques for RF power amplifiers Arvind Raghavan, Nuttapong Srirattana, Joy Laskar |
| title_short | Modeling and design techniques for RF power amplifiers |
| title_sort | modeling and design techniques for rf power amplifiers |
| topic | TECHNOLOGY & ENGINEERING / Radio bisacsh TECHNOLOGY & ENGINEERING / Mobile & Wireless Communications bisacsh Power amplifiers Design and construction Amplifiers, Radio frequency Schaltungsentwurf (DE-588)4179389-4 gnd Hochfrequenzverstärker (DE-588)4160154-3 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Radio TECHNOLOGY & ENGINEERING / Mobile & Wireless Communications Power amplifiers Design and construction Amplifiers, Radio frequency Schaltungsentwurf Hochfrequenzverstärker |
| url | http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=219801 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028575957&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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