TCAD for Si, SiGe and GaAs integrated circuits:
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Bibliographic Details
Main Author: Armstrong, G. A. (Author)
Format: Electronic eBook
Language:English
Published: London Institution of Engineering and Technology 2007
Series:IET circuits, devices and systems series v. 21
Subjects:
Online Access:FAW01
FAW02
Volltext
Item Description:Title from title screen
Includes bibliographical references and index
Preface; 1 Introduction; 2 IC technology and TCAD tools; 3 Diffusion and oxidation of SiGe/SiGeC films; 4 Strain-engineered MOSFETs; 5 SOI MOSFETs; 6 Heterostructure bipolar transistors; 7 SiGe/SiGeC HBT technology; 8 MOSFET: compact models; 9 HBT: compact models; 10 Design and simulation of high-speed devices; 11 Passive components; Index
The first book that deals with a broad spectrum of process and device design, and modelling issues related to various semiconductor devices. This monograph attempts to bridge the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research and development engineers and scientists involved in microelectronics technology and device design via Technolog
Physical Description:1 Online-Ressource (xi, 443 pages)
ISBN:086341222X
9780863412226
9780863417436

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