TCAD for Si, SiGe and GaAs integrated circuits:
Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Armstrong, G. A. (VerfasserIn)
Format: Elektronisch E-Book
Sprache:English
Veröffentlicht: London Institution of Engineering and Technology 2007
Schriftenreihe:IET circuits, devices and systems series v. 21
Schlagworte:
Online-Zugang:FAW01
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Volltext
Beschreibung:Title from title screen
Includes bibliographical references and index
Preface; 1 Introduction; 2 IC technology and TCAD tools; 3 Diffusion and oxidation of SiGe/SiGeC films; 4 Strain-engineered MOSFETs; 5 SOI MOSFETs; 6 Heterostructure bipolar transistors; 7 SiGe/SiGeC HBT technology; 8 MOSFET: compact models; 9 HBT: compact models; 10 Design and simulation of high-speed devices; 11 Passive components; Index
The first book that deals with a broad spectrum of process and device design, and modelling issues related to various semiconductor devices. This monograph attempts to bridge the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research and development engineers and scientists involved in microelectronics technology and device design via Technolog
Beschreibung:1 Online-Ressource (xi, 443 pages)
ISBN:086341222X
9780863412226
9780863417436

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