Mosfet modeling for VLSI simulation: theory and practice
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
New Jersey
World Scientific
c2007
|
| Schriftenreihe: | International series on advances in solid state electronics and technology
|
| Schlagworte: | |
| Online-Zugang: | FAW01 FAW02 Volltext |
| Beschreibung: | Includes bibliographical references and index Foreword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300K A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required |
| Beschreibung: | 1 Online-Ressource (xxiii, 605 p.) |
| ISBN: | 9789812707581 9812707581 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV043146339 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 151126s2007 |||| o||u| ||||||eng d | ||
| 020 | |a 9789812707581 |c electronic bk. |9 978-981-270-758-1 | ||
| 020 | |a 9812707581 |c electronic bk. |9 981-270-758-1 | ||
| 035 | |a (OCoLC)173612115 | ||
| 035 | |a (DE-599)BVBBV043146339 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-1046 |a DE-1047 | ||
| 082 | 0 | |a 621.3815/284 |2 22 | |
| 100 | 1 | |a Arora, N., (Narain) |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Mosfet modeling for VLSI simulation |b theory and practice |c Narain Arora |
| 264 | 1 | |a New Jersey |b World Scientific |c c2007 | |
| 300 | |a 1 Online-Ressource (xxiii, 605 p.) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a International series on advances in solid state electronics and technology | |
| 500 | |a Includes bibliographical references and index | ||
| 500 | |a Foreword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300K | ||
| 500 | |a A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required | ||
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Transistors |2 bisacsh | |
| 650 | 7 | |a Integrated circuits / Very large scale integration |2 fast | |
| 650 | 7 | |a Integrated circuits / Very large scale integration / Computer simulation |2 fast | |
| 650 | 7 | |a Metal oxide semiconductor field-effect transistors |2 fast | |
| 650 | 4 | |a Metal oxide semiconductor field-effect transistors | |
| 650 | 4 | |a Integrated circuits |x Very large scale integration | |
| 650 | 4 | |a Integrated circuits |x Very large scale integration |x Computer simulation | |
| 856 | 4 | 0 | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203861 |x Aggregator |3 Volltext |
| 912 | |a ZDB-4-EBA | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-028570530 | ||
| 966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203861 |l FAW01 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
| 966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203861 |l FAW02 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804175600968007680 |
|---|---|
| any_adam_object | |
| author | Arora, N., (Narain) |
| author_facet | Arora, N., (Narain) |
| author_role | aut |
| author_sort | Arora, N., (Narain) |
| author_variant | n n a nn nna |
| building | Verbundindex |
| bvnumber | BV043146339 |
| collection | ZDB-4-EBA |
| ctrlnum | (OCoLC)173612115 (DE-599)BVBBV043146339 |
| dewey-full | 621.3815/284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/284 |
| dewey-search | 621.3815/284 |
| dewey-sort | 3621.3815 3284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03259nmm a2200457zc 4500</leader><controlfield tag="001">BV043146339</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">151126s2007 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789812707581</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">978-981-270-758-1</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812707581</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">981-270-758-1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)173612115</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV043146339</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1046</subfield><subfield code="a">DE-1047</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/284</subfield><subfield code="2">22</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Arora, N., (Narain)</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Mosfet modeling for VLSI simulation</subfield><subfield code="b">theory and practice</subfield><subfield code="c">Narain Arora</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New Jersey</subfield><subfield code="b">World Scientific</subfield><subfield code="c">c2007</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (xxiii, 605 p.)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">International series on advances in solid state electronics and technology</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Foreword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300K</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Transistors</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Integrated circuits / Very large scale integration</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Integrated circuits / Very large scale integration / Computer simulation</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Metal oxide semiconductor field-effect transistors</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductor field-effect transistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuits</subfield><subfield code="x">Very large scale integration</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuits</subfield><subfield code="x">Very large scale integration</subfield><subfield code="x">Computer simulation</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203861</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-028570530</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203861</subfield><subfield code="l">FAW01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203861</subfield><subfield code="l">FAW02</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV043146339 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:18:52Z |
| institution | BVB |
| isbn | 9789812707581 9812707581 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028570530 |
| oclc_num | 173612115 |
| open_access_boolean | |
| owner | DE-1046 DE-1047 |
| owner_facet | DE-1046 DE-1047 |
| physical | 1 Online-Ressource (xxiii, 605 p.) |
| psigel | ZDB-4-EBA ZDB-4-EBA FAW_PDA_EBA |
| publishDate | 2007 |
| publishDateSearch | 2007 |
| publishDateSort | 2007 |
| publisher | World Scientific |
| record_format | marc |
| series2 | International series on advances in solid state electronics and technology |
| spelling | Arora, N., (Narain) Verfasser aut Mosfet modeling for VLSI simulation theory and practice Narain Arora New Jersey World Scientific c2007 1 Online-Ressource (xxiii, 605 p.) txt rdacontent c rdamedia cr rdacarrier International series on advances in solid state electronics and technology Includes bibliographical references and index Foreword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300K A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Integrated circuits / Very large scale integration fast Integrated circuits / Very large scale integration / Computer simulation fast Metal oxide semiconductor field-effect transistors fast Metal oxide semiconductor field-effect transistors Integrated circuits Very large scale integration Integrated circuits Very large scale integration Computer simulation http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203861 Aggregator Volltext |
| spellingShingle | Arora, N., (Narain) Mosfet modeling for VLSI simulation theory and practice TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Integrated circuits / Very large scale integration fast Integrated circuits / Very large scale integration / Computer simulation fast Metal oxide semiconductor field-effect transistors fast Metal oxide semiconductor field-effect transistors Integrated circuits Very large scale integration Integrated circuits Very large scale integration Computer simulation |
| title | Mosfet modeling for VLSI simulation theory and practice |
| title_auth | Mosfet modeling for VLSI simulation theory and practice |
| title_exact_search | Mosfet modeling for VLSI simulation theory and practice |
| title_full | Mosfet modeling for VLSI simulation theory and practice Narain Arora |
| title_fullStr | Mosfet modeling for VLSI simulation theory and practice Narain Arora |
| title_full_unstemmed | Mosfet modeling for VLSI simulation theory and practice Narain Arora |
| title_short | Mosfet modeling for VLSI simulation |
| title_sort | mosfet modeling for vlsi simulation theory and practice |
| title_sub | theory and practice |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Integrated circuits / Very large scale integration fast Integrated circuits / Very large scale integration / Computer simulation fast Metal oxide semiconductor field-effect transistors fast Metal oxide semiconductor field-effect transistors Integrated circuits Very large scale integration Integrated circuits Very large scale integration Computer simulation |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Transistors Integrated circuits / Very large scale integration Integrated circuits / Very large scale integration / Computer simulation Metal oxide semiconductor field-effect transistors Integrated circuits Very large scale integration Integrated circuits Very large scale integration Computer simulation |
| url | http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203861 |
| work_keys_str_mv | AT arorannarain mosfetmodelingforvlsisimulationtheoryandpractice |