The physics and modeling of MOSFETS: surface-potential model HiSIM
Gespeichert in:
1. Verfasser: | |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Singapore
World Scientific Pub.
c2008
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Schriftenreihe: | International series on advances in solid state electronics and technology
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Schlagworte: | |
Online-Zugang: | FAW01 FAW02 Volltext |
Beschreibung: | Title from title screen Includes bibliographical references and index |
Beschreibung: | 1 Online-Ressource (xxii, 352 p.) |
ISBN: | 9789812568649 9789812812056 9812568646 9812812059 |
Internformat
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Datensatz im Suchindex
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any_adam_object | |
author | Miura-Mattausch, Mitiko |
author_facet | Miura-Mattausch, Mitiko |
author_role | aut |
author_sort | Miura-Mattausch, Mitiko |
author_variant | m m m mmm |
building | Verbundindex |
bvnumber | BV043138122 |
collection | ZDB-4-EBA |
ctrlnum | (OCoLC)551762896 (DE-599)BVBBV043138122 |
dewey-full | 621.3815/284015118 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/284015118 |
dewey-search | 621.3815/284015118 |
dewey-sort | 3621.3815 9284015118 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Electronic eBook |
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indexdate | 2024-07-10T07:18:37Z |
institution | BVB |
isbn | 9789812568649 9789812812056 9812568646 9812812059 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028562313 |
oclc_num | 551762896 |
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physical | 1 Online-Ressource (xxii, 352 p.) |
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publisher | World Scientific Pub. |
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series2 | International series on advances in solid state electronics and technology |
spelling | Miura-Mattausch, Mitiko Verfasser aut The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki Singapore World Scientific Pub. c2008 1 Online-Ressource (xxii, 352 p.) txt rdacontent c rdamedia cr rdacarrier International series on advances in solid state electronics and technology Title from title screen Includes bibliographical references and index TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Metal oxide semiconductor field-effect transistors / Mathematical models fast Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Simulation (DE-588)4055072-2 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf MOS-FET (DE-588)4207266-9 s Simulation (DE-588)4055072-2 s 1\p DE-604 Mattausch, Hans Jürgen Sonstige oth Ezaki, Tatsuya Sonstige oth http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=514830 Aggregator Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Miura-Mattausch, Mitiko The physics and modeling of MOSFETS surface-potential model HiSIM TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Metal oxide semiconductor field-effect transistors / Mathematical models fast Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Simulation (DE-588)4055072-2 gnd MOS-FET (DE-588)4207266-9 gnd |
subject_GND | (DE-588)4055072-2 (DE-588)4207266-9 |
title | The physics and modeling of MOSFETS surface-potential model HiSIM |
title_auth | The physics and modeling of MOSFETS surface-potential model HiSIM |
title_exact_search | The physics and modeling of MOSFETS surface-potential model HiSIM |
title_full | The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki |
title_fullStr | The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki |
title_full_unstemmed | The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki |
title_short | The physics and modeling of MOSFETS |
title_sort | the physics and modeling of mosfets surface potential model hisim |
title_sub | surface-potential model HiSIM |
topic | TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Metal oxide semiconductor field-effect transistors / Mathematical models fast Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Simulation (DE-588)4055072-2 gnd MOS-FET (DE-588)4207266-9 gnd |
topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Transistors Metal oxide semiconductor field-effect transistors / Mathematical models Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Simulation MOS-FET |
url | http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=514830 |
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