III-nitride: semiconductor materials
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
London
Imperial College Press
c2006
|
| Schlagworte: | |
| Online-Zugang: | DE-1046 DE-1047 Volltext |
| Beschreibung: | Includes bibliographical references Cover -- Contents -- Preface -- Chapter 1 Hydride vapor phase epitaxy of group III nitride materials -- 1. Introduction -- 2. Experiment -- 3. Material Properties -- 3.1. Undoped GaN layers -- 3.2. Si-doped GaN layers -- 3.3. Mg-doped GaN layers -- 3.4. Zn-doped GaN layers -- 3.5. AlN layers -- 3.6. AlGaN layers -- 3.7. InN and InGaN layers -- 4. New directions in HVPE development -- 4.1. Large area and multi wafer HVPE growth -- 4.2. Multi-layer structures -- 4.3. P-n junctions -- 4.4. Structures with two dimensional carrier gas -- 4.5. Nano structures and porous materials -- 5. Applications of HVPE grown group III nitride materials -- 5.1. Substrate applications -- 5.2. Device Applications -- 6. Conclusions -- Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials -- 1. History of Reactor Development for III-Nitrides III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals |
| Beschreibung: | 1 Online-Ressource (xii, 428 p.) |
| ISBN: | 1860946364 1860949037 9781860946363 9781860949036 |
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| 500 | |a Cover -- Contents -- Preface -- Chapter 1 Hydride vapor phase epitaxy of group III nitride materials -- 1. Introduction -- 2. Experiment -- 3. Material Properties -- 3.1. Undoped GaN layers -- 3.2. Si-doped GaN layers -- 3.3. Mg-doped GaN layers -- 3.4. Zn-doped GaN layers -- 3.5. AlN layers -- 3.6. AlGaN layers -- 3.7. InN and InGaN layers -- 4. New directions in HVPE development -- 4.1. Large area and multi wafer HVPE growth -- 4.2. Multi-layer structures -- 4.3. P-n junctions -- 4.4. Structures with two dimensional carrier gas -- 4.5. Nano structures and porous materials -- 5. Applications of HVPE grown group III nitride materials -- 5.1. Substrate applications -- 5.2. Device Applications -- 6. Conclusions -- Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials -- 1. History of Reactor Development for III-Nitrides | ||
| 500 | |a III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals | ||
| 650 | 4 | |a Semiconducteurs | |
| 650 | 4 | |a Nitrures / Propriétés électriques | |
| 650 | 4 | |a Électronique / Matériaux | |
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| 650 | 7 | |a Nitrides |2 fast | |
| 650 | 7 | |a Semiconductors / Materials |2 fast | |
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Datensatz im Suchindex
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| id | DE-604.BV043133486 |
| illustrated | Not Illustrated |
| indexdate | 2024-08-27T00:22:26Z |
| institution | BVB |
| isbn | 1860946364 1860949037 9781860946363 9781860949036 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028557677 |
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| owner | DE-1046 DE-1047 |
| owner_facet | DE-1046 DE-1047 |
| physical | 1 Online-Ressource (xii, 428 p.) |
| psigel | ZDB-4-EBA ZDB-4-EBA FAW_PDA_EBA |
| publishDate | 2006 |
| publishDateSearch | 2006 |
| publishDateSort | 2006 |
| publisher | Imperial College Press |
| record_format | marc |
| spelling | III-nitride semiconductor materials editor, Zhe Chuan Feng London Imperial College Press c2006 1 Online-Ressource (xii, 428 p.) txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references Cover -- Contents -- Preface -- Chapter 1 Hydride vapor phase epitaxy of group III nitride materials -- 1. Introduction -- 2. Experiment -- 3. Material Properties -- 3.1. Undoped GaN layers -- 3.2. Si-doped GaN layers -- 3.3. Mg-doped GaN layers -- 3.4. Zn-doped GaN layers -- 3.5. AlN layers -- 3.6. AlGaN layers -- 3.7. InN and InGaN layers -- 4. New directions in HVPE development -- 4.1. Large area and multi wafer HVPE growth -- 4.2. Multi-layer structures -- 4.3. P-n junctions -- 4.4. Structures with two dimensional carrier gas -- 4.5. Nano structures and porous materials -- 5. Applications of HVPE grown group III nitride materials -- 5.1. Substrate applications -- 5.2. Device Applications -- 6. Conclusions -- Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials -- 1. History of Reactor Development for III-Nitrides III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals Semiconducteurs Nitrures / Propriétés électriques Électronique / Matériaux Dépôt en phase vapeur par organométalliques SCIENCE / Chemistry / Physical & Theoretical bisacsh Nitrides fast Semiconductors / Materials fast Chemie Semiconductors Materials Nitrides Borgruppennitride (DE-588)4590273-2 gnd rswk-swf Wide-bandgap Halbleiter (DE-588)4273153-7 gnd rswk-swf Borgruppennitride (DE-588)4590273-2 s Wide-bandgap Halbleiter (DE-588)4273153-7 s 1\p DE-604 Feng, Zhe Chuan Sonstige oth http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=210705 Aggregator Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | III-nitride semiconductor materials Semiconducteurs Nitrures / Propriétés électriques Électronique / Matériaux Dépôt en phase vapeur par organométalliques SCIENCE / Chemistry / Physical & Theoretical bisacsh Nitrides fast Semiconductors / Materials fast Chemie Semiconductors Materials Nitrides Borgruppennitride (DE-588)4590273-2 gnd Wide-bandgap Halbleiter (DE-588)4273153-7 gnd |
| subject_GND | (DE-588)4590273-2 (DE-588)4273153-7 |
| title | III-nitride semiconductor materials |
| title_auth | III-nitride semiconductor materials |
| title_exact_search | III-nitride semiconductor materials |
| title_full | III-nitride semiconductor materials editor, Zhe Chuan Feng |
| title_fullStr | III-nitride semiconductor materials editor, Zhe Chuan Feng |
| title_full_unstemmed | III-nitride semiconductor materials editor, Zhe Chuan Feng |
| title_short | III-nitride |
| title_sort | iii nitride semiconductor materials |
| title_sub | semiconductor materials |
| topic | Semiconducteurs Nitrures / Propriétés électriques Électronique / Matériaux Dépôt en phase vapeur par organométalliques SCIENCE / Chemistry / Physical & Theoretical bisacsh Nitrides fast Semiconductors / Materials fast Chemie Semiconductors Materials Nitrides Borgruppennitride (DE-588)4590273-2 gnd Wide-bandgap Halbleiter (DE-588)4273153-7 gnd |
| topic_facet | Semiconducteurs Nitrures / Propriétés électriques Électronique / Matériaux Dépôt en phase vapeur par organométalliques SCIENCE / Chemistry / Physical & Theoretical Nitrides Semiconductors / Materials Chemie Semiconductors Materials Borgruppennitride Wide-bandgap Halbleiter |
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| work_keys_str_mv | AT fengzhechuan iiinitridesemiconductormaterials |