Transistors: from crystals to integrated circuits
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Singapore
World Scientific
©1998
|
Schlagworte: | |
Online-Zugang: | FAW01 FAW02 Volltext |
Beschreibung: | Includes bibliographical references and index pt. I. Semiconductors. ch. 1. The main properties of semiconductors. 1.1. Intrinsic semiconductors. 1.2. Impurity semiconductors. 1.3. Deep levels. 1.4. Summary -- ch. 2. Motion of electrons and holes inside the crystal. 2.1. Thermal motion. 2.2. Motion in the electric field. 2.3. Diffusion. 2.4. Summary -- pt. II. Barriers & junctions. ch. 3. The barrier on the crystal boundary. 3.1. Work function. 3.2. Surface states. 3.3. Bending bands, surface potential. 3.4. Summary -- ch. 4. The main parameters of potential barriers. 4.1. How the electric field penetrates into a metal, dielectric and semiconductor. 4.2. Field dependence on the coordinate. 4.3. Poisson's equation. 4.4. A few words about accumulation layers. 4.5. Summary -- ch. 5. p-n Junction. 5.1. Ways of obtaining p-n junctions. 5.2. Barrier on the boundary. 5.3. Summary -- ch. 6. Diodes with the p-n junctions. 6.1. Photodiodes. 6.2. Variable capacitors. 6.3. Light-emitted diodes. 6.4. Solar cells. 6.5. Rectifier diodes. 6.6 Summary -- pt. III. Transistors. ch. 7. Bipolar transistors. 7.1. Principle of operation of a bipolar transistor. 7.2. Some words about the types and manufacturing of bipolar transistors. 7.3. The simplest transistor circuits. 7.4. Summary -- ch. 8. Field effect transistors. 8.1. The beginning. 8.2. Maturity and flourishing. 8.3. Epitaxy. 8.4. A few important details. 8.5. The work of the FETs in actual regimes. 8.6. FET as an element of electronic circuits. 8.7. Summary -- ch. 9. Transistors and life. 9.1. The first king. 9.2. Ugly duckling. 9.3. Long live the new king! 9.4. The king ... disappears. Long live the new king! 9.5 Claimants to the throne |
Beschreibung: | 1 Online-Ressource (xii, 241 pages) |
ISBN: | 9789810248611 981024861X |
Internformat
MARC
LEADER | 00000nmm a2200000zc 4500 | ||
---|---|---|---|
001 | BV043122293 | ||
003 | DE-604 | ||
005 | 00000000000000.0 | ||
007 | cr|uuu---uuuuu | ||
008 | 151126s1998 |||| o||u| ||||||eng d | ||
020 | |a 9789810248611 |9 978-981-02-4861-1 | ||
020 | |a 981024861X |9 981-02-4861-X | ||
035 | |a (OCoLC)49570025 | ||
035 | |a (DE-599)BVBBV043122293 | ||
040 | |a DE-604 |b ger |e aacr | ||
041 | 0 | |a eng | |
049 | |a DE-1046 |a DE-1047 | ||
082 | 0 | |a 621.381528 |2 21 | |
100 | 1 | |a Levinshteĭn, M. E., (Mikhail Efimovich) |e Verfasser |4 aut | |
245 | 1 | 0 | |a Transistors |b from crystals to integrated circuits |c M. Levinshtein & G. Simin ; trans. by Minna M. Perelman |
264 | 1 | |a Singapore |b World Scientific |c ©1998 | |
300 | |a 1 Online-Ressource (xii, 241 pages) | ||
336 | |b txt |2 rdacontent | ||
337 | |b c |2 rdamedia | ||
338 | |b cr |2 rdacarrier | ||
500 | |a Includes bibliographical references and index | ||
500 | |a pt. I. Semiconductors. ch. 1. The main properties of semiconductors. 1.1. Intrinsic semiconductors. 1.2. Impurity semiconductors. 1.3. Deep levels. 1.4. Summary -- ch. 2. Motion of electrons and holes inside the crystal. 2.1. Thermal motion. 2.2. Motion in the electric field. 2.3. Diffusion. 2.4. Summary -- pt. II. Barriers & junctions. ch. 3. The barrier on the crystal boundary. 3.1. Work function. 3.2. Surface states. 3.3. Bending bands, surface potential. 3.4. Summary -- ch. 4. The main parameters of potential barriers. 4.1. How the electric field penetrates into a metal, dielectric and semiconductor. 4.2. Field dependence on the coordinate. 4.3. Poisson's equation. 4.4. A few words about accumulation layers. 4.5. Summary -- ch. 5. p-n Junction. 5.1. Ways of obtaining p-n junctions. 5.2. Barrier on the boundary. 5.3. Summary -- ch. 6. Diodes with the p-n junctions. 6.1. Photodiodes. 6.2. Variable capacitors. 6.3. Light-emitted diodes. 6.4. Solar cells. 6.5. Rectifier diodes. 6.6 Summary -- pt. III. Transistors. ch. 7. Bipolar transistors. 7.1. Principle of operation of a bipolar transistor. 7.2. Some words about the types and manufacturing of bipolar transistors. 7.3. The simplest transistor circuits. 7.4. Summary -- ch. 8. Field effect transistors. 8.1. The beginning. 8.2. Maturity and flourishing. 8.3. Epitaxy. 8.4. A few important details. 8.5. The work of the FETs in actual regimes. 8.6. FET as an element of electronic circuits. 8.7. Summary -- ch. 9. Transistors and life. 9.1. The first king. 9.2. Ugly duckling. 9.3. Long live the new king! 9.4. The king ... disappears. Long live the new king! 9.5 Claimants to the throne | ||
650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Microelectronics |2 bisacsh | |
650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Digital |2 bisacsh | |
650 | 7 | |a Transistors |2 fast | |
650 | 4 | |a Transistors | |
650 | 0 | 7 | |a Transistor |0 (DE-588)4060646-6 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a Transistor |0 (DE-588)4060646-6 |D s |
689 | 0 | |8 1\p |5 DE-604 | |
700 | 1 | |a Simin, G. S. |e Sonstige |4 oth | |
700 | 1 | |a Perelman, Minna M. |e Sonstige |4 oth | |
856 | 4 | 0 | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=65768 |x Aggregator |3 Volltext |
912 | |a ZDB-4-EBA | ||
999 | |a oai:aleph.bib-bvb.de:BVB01-028546484 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=65768 |l FAW01 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=65768 |l FAW02 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext |
Datensatz im Suchindex
_version_ | 1804175552883458048 |
---|---|
any_adam_object | |
author | Levinshteĭn, M. E., (Mikhail Efimovich) |
author_facet | Levinshteĭn, M. E., (Mikhail Efimovich) |
author_role | aut |
author_sort | Levinshteĭn, M. E., (Mikhail Efimovich) |
author_variant | m e m e l meme memel |
building | Verbundindex |
bvnumber | BV043122293 |
collection | ZDB-4-EBA |
ctrlnum | (OCoLC)49570025 (DE-599)BVBBV043122293 |
dewey-full | 621.381528 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.381528 |
dewey-search | 621.381528 |
dewey-sort | 3621.381528 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Electronic eBook |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03643nmm a2200469zc 4500</leader><controlfield tag="001">BV043122293</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">151126s1998 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789810248611</subfield><subfield code="9">978-981-02-4861-1</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">981024861X</subfield><subfield code="9">981-02-4861-X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)49570025</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV043122293</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1046</subfield><subfield code="a">DE-1047</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381528</subfield><subfield code="2">21</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Levinshteĭn, M. E., (Mikhail Efimovich)</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Transistors</subfield><subfield code="b">from crystals to integrated circuits</subfield><subfield code="c">M. Levinshtein & G. Simin ; trans. by Minna M. Perelman</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Singapore</subfield><subfield code="b">World Scientific</subfield><subfield code="c">©1998</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (xii, 241 pages)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">pt. I. Semiconductors. ch. 1. The main properties of semiconductors. 1.1. Intrinsic semiconductors. 1.2. Impurity semiconductors. 1.3. Deep levels. 1.4. Summary -- ch. 2. Motion of electrons and holes inside the crystal. 2.1. Thermal motion. 2.2. Motion in the electric field. 2.3. Diffusion. 2.4. Summary -- pt. II. Barriers & junctions. ch. 3. The barrier on the crystal boundary. 3.1. Work function. 3.2. Surface states. 3.3. Bending bands, surface potential. 3.4. Summary -- ch. 4. The main parameters of potential barriers. 4.1. How the electric field penetrates into a metal, dielectric and semiconductor. 4.2. Field dependence on the coordinate. 4.3. Poisson's equation. 4.4. A few words about accumulation layers. 4.5. Summary -- ch. 5. p-n Junction. 5.1. Ways of obtaining p-n junctions. 5.2. Barrier on the boundary. 5.3. Summary -- ch. 6. Diodes with the p-n junctions. 6.1. Photodiodes. 6.2. Variable capacitors. 6.3. Light-emitted diodes. 6.4. Solar cells. 6.5. Rectifier diodes. 6.6 Summary -- pt. III. Transistors. ch. 7. Bipolar transistors. 7.1. Principle of operation of a bipolar transistor. 7.2. Some words about the types and manufacturing of bipolar transistors. 7.3. The simplest transistor circuits. 7.4. Summary -- ch. 8. Field effect transistors. 8.1. The beginning. 8.2. Maturity and flourishing. 8.3. Epitaxy. 8.4. A few important details. 8.5. The work of the FETs in actual regimes. 8.6. FET as an element of electronic circuits. 8.7. Summary -- ch. 9. Transistors and life. 9.1. The first king. 9.2. Ugly duckling. 9.3. Long live the new king! 9.4. The king ... disappears. Long live the new king! 9.5 Claimants to the throne</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Microelectronics</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Digital</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Transistors</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transistors</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Transistor</subfield><subfield code="0">(DE-588)4060646-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Transistor</subfield><subfield code="0">(DE-588)4060646-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Simin, G. S.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Perelman, Minna M.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=65768</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-028546484</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=65768</subfield><subfield code="l">FAW01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=65768</subfield><subfield code="l">FAW02</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
id | DE-604.BV043122293 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T07:18:07Z |
institution | BVB |
isbn | 9789810248611 981024861X |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028546484 |
oclc_num | 49570025 |
open_access_boolean | |
owner | DE-1046 DE-1047 |
owner_facet | DE-1046 DE-1047 |
physical | 1 Online-Ressource (xii, 241 pages) |
psigel | ZDB-4-EBA ZDB-4-EBA FAW_PDA_EBA |
publishDate | 1998 |
publishDateSearch | 1998 |
publishDateSort | 1998 |
publisher | World Scientific |
record_format | marc |
spelling | Levinshteĭn, M. E., (Mikhail Efimovich) Verfasser aut Transistors from crystals to integrated circuits M. Levinshtein & G. Simin ; trans. by Minna M. Perelman Singapore World Scientific ©1998 1 Online-Ressource (xii, 241 pages) txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references and index pt. I. Semiconductors. ch. 1. The main properties of semiconductors. 1.1. Intrinsic semiconductors. 1.2. Impurity semiconductors. 1.3. Deep levels. 1.4. Summary -- ch. 2. Motion of electrons and holes inside the crystal. 2.1. Thermal motion. 2.2. Motion in the electric field. 2.3. Diffusion. 2.4. Summary -- pt. II. Barriers & junctions. ch. 3. The barrier on the crystal boundary. 3.1. Work function. 3.2. Surface states. 3.3. Bending bands, surface potential. 3.4. Summary -- ch. 4. The main parameters of potential barriers. 4.1. How the electric field penetrates into a metal, dielectric and semiconductor. 4.2. Field dependence on the coordinate. 4.3. Poisson's equation. 4.4. A few words about accumulation layers. 4.5. Summary -- ch. 5. p-n Junction. 5.1. Ways of obtaining p-n junctions. 5.2. Barrier on the boundary. 5.3. Summary -- ch. 6. Diodes with the p-n junctions. 6.1. Photodiodes. 6.2. Variable capacitors. 6.3. Light-emitted diodes. 6.4. Solar cells. 6.5. Rectifier diodes. 6.6 Summary -- pt. III. Transistors. ch. 7. Bipolar transistors. 7.1. Principle of operation of a bipolar transistor. 7.2. Some words about the types and manufacturing of bipolar transistors. 7.3. The simplest transistor circuits. 7.4. Summary -- ch. 8. Field effect transistors. 8.1. The beginning. 8.2. Maturity and flourishing. 8.3. Epitaxy. 8.4. A few important details. 8.5. The work of the FETs in actual regimes. 8.6. FET as an element of electronic circuits. 8.7. Summary -- ch. 9. Transistors and life. 9.1. The first king. 9.2. Ugly duckling. 9.3. Long live the new king! 9.4. The king ... disappears. Long live the new king! 9.5 Claimants to the throne TECHNOLOGY & ENGINEERING / Electronics / Microelectronics bisacsh TECHNOLOGY & ENGINEERING / Electronics / Digital bisacsh Transistors fast Transistors Transistor (DE-588)4060646-6 gnd rswk-swf Transistor (DE-588)4060646-6 s 1\p DE-604 Simin, G. S. Sonstige oth Perelman, Minna M. Sonstige oth http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=65768 Aggregator Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Levinshteĭn, M. E., (Mikhail Efimovich) Transistors from crystals to integrated circuits TECHNOLOGY & ENGINEERING / Electronics / Microelectronics bisacsh TECHNOLOGY & ENGINEERING / Electronics / Digital bisacsh Transistors fast Transistors Transistor (DE-588)4060646-6 gnd |
subject_GND | (DE-588)4060646-6 |
title | Transistors from crystals to integrated circuits |
title_auth | Transistors from crystals to integrated circuits |
title_exact_search | Transistors from crystals to integrated circuits |
title_full | Transistors from crystals to integrated circuits M. Levinshtein & G. Simin ; trans. by Minna M. Perelman |
title_fullStr | Transistors from crystals to integrated circuits M. Levinshtein & G. Simin ; trans. by Minna M. Perelman |
title_full_unstemmed | Transistors from crystals to integrated circuits M. Levinshtein & G. Simin ; trans. by Minna M. Perelman |
title_short | Transistors |
title_sort | transistors from crystals to integrated circuits |
title_sub | from crystals to integrated circuits |
topic | TECHNOLOGY & ENGINEERING / Electronics / Microelectronics bisacsh TECHNOLOGY & ENGINEERING / Electronics / Digital bisacsh Transistors fast Transistors Transistor (DE-588)4060646-6 gnd |
topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Microelectronics TECHNOLOGY & ENGINEERING / Electronics / Digital Transistors Transistor |
url | http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=65768 |
work_keys_str_mv | AT levinshteinmemikhailefimovich transistorsfromcrystalstointegratedcircuits AT simings transistorsfromcrystalstointegratedcircuits AT perelmanminnam transistorsfromcrystalstointegratedcircuits |