Silicides: fundamentals and applications : proceedings of the 16th Course of the International School of Solid State Physics, Erice, Italy, 5-16 June 1999
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore
World Scientific
c2000
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| Schriftenreihe: | Science and culture series (Singapore)
1 |
| Schlagworte: | |
| Online-Zugang: | FAW01 FAW02 Volltext |
| Beschreibung: | Paralleltitel: Silicides, fundamentals and applications Includes bibliographical references and index Crystal chemistry of metal silicides / R. Madar -- Structural features of binary transition metal silicides / I. Engstrom -- Bonding and polymorphism in transition metal disilicides / L. Miglio, M. Iannuzzi and D. Migas -- Diffusion in silicides: basic approach and practical applications / P. Gas and F. M. d'Heurle -- Silicides and thermodynamics / C. Bernard and A. Pisch -- Optical properties of silicides: theory and experiment / V. Antonov and F. Marabelli -- Electronic structure [symbol] / K. Goransson -- Ion beam synthesized [symbol] precipitates in Si: structural characterization and origin of the 1.54 pm luminescence / M. G. Grimaldi, S. Coffa and C. Spinella -- Optical characterization of [symbol] / W. Henrion ... [et al.] -- Fundamental electronic properties of semiconducting silicides / V. Borisenko -- Semiconducting silicides -- thermoelectric properties and applications / A. Heinrich -- Metallic silicides / G. Ottaviani -- - Conversion electron Mossbauer spectroscopy study of iron disilicide / M. Fanciulli -- The kinetics of reactive phase formation: silicides / F.M. d'Heurle -- Reactive phase formation in binary and ternary silicide systems / A. A. Kodentsov ... [et al.] -- Epitaxial silicides / H. von Kanel -- Ion bean synthesis, molecular beam allotaxy and self-assembled patterning of epitaxial silicides / S. Mantl -- Silicides: materials science and applications for microelectronics / K. Maex and A. Lauwers -- Mechanisms for enhanced formation of the C54 phase of titanium silicides / J. M. E. Harper ... [et al.] -- Titanium and tungsten silicides in silicon device technology / G. Queirolo -- Micro-Raman spectroscopy applied to microelectronics: the phase transition of [symbol] from C49 to C54 / S. Quilici -- Stresses in silicides thin films obtained by solid state reaction / P. Gergaud ... [et al.] -- The changing views on the Schottky barrier / R.Tung -- - Internal photoemission spectroscopy for a [symbol] Schottky junction / B. Asian and R. Turan -- Metal rich structural silicides / A. J. Thorn ... [et al.] -- The epitaxy of [symbol] on Si substrates: a review / S.-L. Zhang and F. M. d'Heurle -- Agglomeration of cobalt disilicide on silicon / A. Alberti, L. Kappius and F. M. d'Heurle Silicides were introduced into the technology of electronic devices some thirty years ago; since then, they have been continuously used to form both ohmic and rectifying contacts to silicon. Silicides are also important for other applications (thermoelectric devices and structural applications, such as jet engines), but it is not easy to find an updated reference containing both their basic properties, either chemical or physical, and the latest applications.The 16th Course of the International School of Solid State Physics, held in Erice (Italy) in the late spring of 1999, was intended to break artificial barriers between disciplines, and to gather people concerned with the properties and applications of silicides, regardless of the formal fields to which they belong, or of the practical goals they pursue. This book is therefore concerned with theory as well as applications, metallurgy as well as physics, and materials science as well as microelectronics |
| Beschreibung: | 1 Online-Ressource (viii, 377 p.) |
| ISBN: | 9789810244521 9789812792136 9810244525 9812792139 |
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| 246 | 1 | 3 | |a 16th Course of the International School of Solid State Physics |
| 246 | 1 | 3 | |a Silicides, fundamentals and applications |
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| 500 | |a Paralleltitel: Silicides, fundamentals and applications | ||
| 500 | |a Includes bibliographical references and index | ||
| 500 | |a Crystal chemistry of metal silicides / R. Madar -- Structural features of binary transition metal silicides / I. Engstrom -- Bonding and polymorphism in transition metal disilicides / L. Miglio, M. Iannuzzi and D. Migas -- Diffusion in silicides: basic approach and practical applications / P. Gas and F. M. d'Heurle -- Silicides and thermodynamics / C. Bernard and A. Pisch -- Optical properties of silicides: theory and experiment / V. Antonov and F. Marabelli -- Electronic structure [symbol] / K. Goransson -- Ion beam synthesized [symbol] precipitates in Si: structural characterization and origin of the 1.54 pm luminescence / M. G. Grimaldi, S. Coffa and C. Spinella -- Optical characterization of [symbol] / W. Henrion ... [et al.] -- Fundamental electronic properties of semiconducting silicides / V. Borisenko -- Semiconducting silicides -- thermoelectric properties and applications / A. Heinrich -- Metallic silicides / G. Ottaviani -- | ||
| 500 | |a - Conversion electron Mossbauer spectroscopy study of iron disilicide / M. Fanciulli -- The kinetics of reactive phase formation: silicides / F.M. d'Heurle -- Reactive phase formation in binary and ternary silicide systems / A. A. Kodentsov ... [et al.] -- Epitaxial silicides / H. von Kanel -- Ion bean synthesis, molecular beam allotaxy and self-assembled patterning of epitaxial silicides / S. Mantl -- Silicides: materials science and applications for microelectronics / K. Maex and A. Lauwers -- Mechanisms for enhanced formation of the C54 phase of titanium silicides / J. M. E. Harper ... [et al.] -- Titanium and tungsten silicides in silicon device technology / G. Queirolo -- Micro-Raman spectroscopy applied to microelectronics: the phase transition of [symbol] from C49 to C54 / S. Quilici -- Stresses in silicides thin films obtained by solid state reaction / P. Gergaud ... [et al.] -- The changing views on the Schottky barrier / R.Tung -- | ||
| 500 | |a - Internal photoemission spectroscopy for a [symbol] Schottky junction / B. Asian and R. Turan -- Metal rich structural silicides / A. J. Thorn ... [et al.] -- The epitaxy of [symbol] on Si substrates: a review / S.-L. Zhang and F. M. d'Heurle -- Agglomeration of cobalt disilicide on silicon / A. Alberti, L. Kappius and F. M. d'Heurle | ||
| 500 | |a Silicides were introduced into the technology of electronic devices some thirty years ago; since then, they have been continuously used to form both ohmic and rectifying contacts to silicon. Silicides are also important for other applications (thermoelectric devices and structural applications, such as jet engines), but it is not easy to find an updated reference containing both their basic properties, either chemical or physical, and the latest applications.The 16th Course of the International School of Solid State Physics, held in Erice (Italy) in the late spring of 1999, was intended to break artificial barriers between disciplines, and to gather people concerned with the properties and applications of silicides, regardless of the formal fields to which they belong, or of the practical goals they pursue. This book is therefore concerned with theory as well as applications, metallurgy as well as physics, and materials science as well as microelectronics | ||
| 650 | 7 | |a SILICIDES. |2 nasat | |
| 650 | 7 | |a SILICON COMPOUNDS. |2 nasat | |
| 650 | 7 | |a ELECTRONIC EQUIPMENT. |2 nasat | |
| 650 | 7 | |a INTEGRATED CIRCUITS. |2 nasat | |
| 650 | 7 | |a THIN FILMS. |2 nasat | |
| 650 | 7 | |a CONFERENCES. |2 nasat | |
| 650 | 7 | |a Kongress |2 swd | |
| 650 | 7 | |a Silicide |2 swd | |
| 650 | 7 | |a SCIENCE / Chemistry / Inorganic |2 bisacsh | |
| 650 | 7 | |a Electronics / Materials |2 fast | |
| 650 | 7 | |a Integrated circuits |2 fast | |
| 650 | 7 | |a Silicides |2 fast | |
| 650 | 7 | |a Thin films |2 fast | |
| 650 | 4 | |a Chemie | |
| 650 | 4 | |a Silicides |v Congresses | |
| 650 | 4 | |a Electronics |x Materials |v Congresses | |
| 650 | 4 | |a Integrated circuits |v Congresses | |
| 650 | 4 | |a Thin films |v Congresses | |
| 650 | 0 | 7 | |a Silicide |0 (DE-588)4268288-5 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Silicide |0 (DE-588)4268288-5 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Miglio, L. |e Sonstige |4 oth | |
| 700 | 1 | |a D'Heurle, F. M. |e Sonstige |4 oth | |
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Datensatz im Suchindex
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| author_corporate | International School of Solid State Physics < 1999, Erice, Italy> |
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| author_facet | International School of Solid State Physics < 1999, Erice, Italy> |
| author_sort | International School of Solid State Physics < 1999, Erice, Italy> |
| building | Verbundindex |
| bvnumber | BV043120177 |
| collection | ZDB-4-EBA |
| ctrlnum | (OCoLC)824699045 (DE-599)BVBBV043120177 |
| dewey-full | 546/.6832 |
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| dewey-ones | 546 - Inorganic chemistry |
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| dewey-sort | 3546 46832 |
| dewey-tens | 540 - Chemistry and allied sciences |
| discipline | Chemie / Pharmazie |
| format | Electronic eBook |
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| series2 | Science and culture series (Singapore) |
| spelling | International School of Solid State Physics < 1999, Erice, Italy> Verfasser aut Silicides fundamentals and applications : proceedings of the 16th Course of the International School of Solid State Physics, Erice, Italy, 5-16 June 1999 editors, Leo Miglio & Francois d'Heurle 16th Course of the International School of Solid State Physics Silicides, fundamentals and applications Singapore World Scientific c2000 1 Online-Ressource (viii, 377 p.) txt rdacontent c rdamedia cr rdacarrier Science and culture series (Singapore) 1 Paralleltitel: Silicides, fundamentals and applications Includes bibliographical references and index Crystal chemistry of metal silicides / R. Madar -- Structural features of binary transition metal silicides / I. Engstrom -- Bonding and polymorphism in transition metal disilicides / L. Miglio, M. Iannuzzi and D. Migas -- Diffusion in silicides: basic approach and practical applications / P. Gas and F. M. d'Heurle -- Silicides and thermodynamics / C. Bernard and A. Pisch -- Optical properties of silicides: theory and experiment / V. Antonov and F. Marabelli -- Electronic structure [symbol] / K. Goransson -- Ion beam synthesized [symbol] precipitates in Si: structural characterization and origin of the 1.54 pm luminescence / M. G. Grimaldi, S. Coffa and C. Spinella -- Optical characterization of [symbol] / W. Henrion ... [et al.] -- Fundamental electronic properties of semiconducting silicides / V. Borisenko -- Semiconducting silicides -- thermoelectric properties and applications / A. Heinrich -- Metallic silicides / G. Ottaviani -- - Conversion electron Mossbauer spectroscopy study of iron disilicide / M. Fanciulli -- The kinetics of reactive phase formation: silicides / F.M. d'Heurle -- Reactive phase formation in binary and ternary silicide systems / A. A. Kodentsov ... [et al.] -- Epitaxial silicides / H. von Kanel -- Ion bean synthesis, molecular beam allotaxy and self-assembled patterning of epitaxial silicides / S. Mantl -- Silicides: materials science and applications for microelectronics / K. Maex and A. Lauwers -- Mechanisms for enhanced formation of the C54 phase of titanium silicides / J. M. E. Harper ... [et al.] -- Titanium and tungsten silicides in silicon device technology / G. Queirolo -- Micro-Raman spectroscopy applied to microelectronics: the phase transition of [symbol] from C49 to C54 / S. Quilici -- Stresses in silicides thin films obtained by solid state reaction / P. Gergaud ... [et al.] -- The changing views on the Schottky barrier / R.Tung -- - Internal photoemission spectroscopy for a [symbol] Schottky junction / B. Asian and R. Turan -- Metal rich structural silicides / A. J. Thorn ... [et al.] -- The epitaxy of [symbol] on Si substrates: a review / S.-L. Zhang and F. M. d'Heurle -- Agglomeration of cobalt disilicide on silicon / A. Alberti, L. Kappius and F. M. d'Heurle Silicides were introduced into the technology of electronic devices some thirty years ago; since then, they have been continuously used to form both ohmic and rectifying contacts to silicon. Silicides are also important for other applications (thermoelectric devices and structural applications, such as jet engines), but it is not easy to find an updated reference containing both their basic properties, either chemical or physical, and the latest applications.The 16th Course of the International School of Solid State Physics, held in Erice (Italy) in the late spring of 1999, was intended to break artificial barriers between disciplines, and to gather people concerned with the properties and applications of silicides, regardless of the formal fields to which they belong, or of the practical goals they pursue. This book is therefore concerned with theory as well as applications, metallurgy as well as physics, and materials science as well as microelectronics SILICIDES. nasat SILICON COMPOUNDS. nasat ELECTRONIC EQUIPMENT. nasat INTEGRATED CIRCUITS. nasat THIN FILMS. nasat CONFERENCES. nasat Kongress swd Silicide swd SCIENCE / Chemistry / Inorganic bisacsh Electronics / Materials fast Integrated circuits fast Silicides fast Thin films fast Chemie Silicides Congresses Electronics Materials Congresses Integrated circuits Congresses Thin films Congresses Silicide (DE-588)4268288-5 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Silicide (DE-588)4268288-5 s 1\p DE-604 Miglio, L. Sonstige oth D'Heurle, F. M. Sonstige oth http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=514223 Aggregator Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Silicides fundamentals and applications : proceedings of the 16th Course of the International School of Solid State Physics, Erice, Italy, 5-16 June 1999 SILICIDES. nasat SILICON COMPOUNDS. nasat ELECTRONIC EQUIPMENT. nasat INTEGRATED CIRCUITS. nasat THIN FILMS. nasat CONFERENCES. nasat Kongress swd Silicide swd SCIENCE / Chemistry / Inorganic bisacsh Electronics / Materials fast Integrated circuits fast Silicides fast Thin films fast Chemie Silicides Congresses Electronics Materials Congresses Integrated circuits Congresses Thin films Congresses Silicide (DE-588)4268288-5 gnd |
| subject_GND | (DE-588)4268288-5 (DE-588)1071861417 |
| title | Silicides fundamentals and applications : proceedings of the 16th Course of the International School of Solid State Physics, Erice, Italy, 5-16 June 1999 |
| title_alt | 16th Course of the International School of Solid State Physics Silicides, fundamentals and applications |
| title_auth | Silicides fundamentals and applications : proceedings of the 16th Course of the International School of Solid State Physics, Erice, Italy, 5-16 June 1999 |
| title_exact_search | Silicides fundamentals and applications : proceedings of the 16th Course of the International School of Solid State Physics, Erice, Italy, 5-16 June 1999 |
| title_full | Silicides fundamentals and applications : proceedings of the 16th Course of the International School of Solid State Physics, Erice, Italy, 5-16 June 1999 editors, Leo Miglio & Francois d'Heurle |
| title_fullStr | Silicides fundamentals and applications : proceedings of the 16th Course of the International School of Solid State Physics, Erice, Italy, 5-16 June 1999 editors, Leo Miglio & Francois d'Heurle |
| title_full_unstemmed | Silicides fundamentals and applications : proceedings of the 16th Course of the International School of Solid State Physics, Erice, Italy, 5-16 June 1999 editors, Leo Miglio & Francois d'Heurle |
| title_short | Silicides |
| title_sort | silicides fundamentals and applications proceedings of the 16th course of the international school of solid state physics erice italy 5 16 june 1999 |
| title_sub | fundamentals and applications : proceedings of the 16th Course of the International School of Solid State Physics, Erice, Italy, 5-16 June 1999 |
| topic | SILICIDES. nasat SILICON COMPOUNDS. nasat ELECTRONIC EQUIPMENT. nasat INTEGRATED CIRCUITS. nasat THIN FILMS. nasat CONFERENCES. nasat Kongress swd Silicide swd SCIENCE / Chemistry / Inorganic bisacsh Electronics / Materials fast Integrated circuits fast Silicides fast Thin films fast Chemie Silicides Congresses Electronics Materials Congresses Integrated circuits Congresses Thin films Congresses Silicide (DE-588)4268288-5 gnd |
| topic_facet | SILICIDES. SILICON COMPOUNDS. ELECTRONIC EQUIPMENT. INTEGRATED CIRCUITS. THIN FILMS. CONFERENCES. Kongress Silicide SCIENCE / Chemistry / Inorganic Electronics / Materials Integrated circuits Silicides Thin films Chemie Silicides Congresses Electronics Materials Congresses Integrated circuits Congresses Thin films Congresses Konferenzschrift |
| url | http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=514223 |
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