Compact hierarchical bipolar transistor modeling with hicum:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore
World Scientific
©2010
|
| Schriftenreihe: | International series on advances in solid state electronics and technology
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| Schlagworte: | |
| Online-Zugang: | FAW01 FAW02 Volltext |
| Beschreibung: | Includes bibliographical references and index Note continued: 11.3. Model deployment for circuit design -- References -- ch. 12 Future Trends -- 12.1. Technology challenges -- 12.2. Future applications -- 12.3. Technology trends -- 12.4. Physical limitations and device modeling -- References Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models |
| Beschreibung: | 1 Online-Ressource (ix, 742 pages) |
| ISBN: | 9789814273213 9789814273220 981427321X 9814273228 |
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| 500 | |a Note continued: 11.3. Model deployment for circuit design -- References -- ch. 12 Future Trends -- 12.1. Technology challenges -- 12.2. Future applications -- 12.3. Technology trends -- 12.4. Physical limitations and device modeling -- References | ||
| 500 | |a Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models | ||
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Datensatz im Suchindex
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| author | Schröter, Michael |
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| bvnumber | BV043102032 |
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| dewey-full | 621.381528 |
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| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381528 |
| dewey-search | 621.381528 |
| dewey-sort | 3621.381528 |
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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| id | DE-604.BV043102032 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:17:29Z |
| institution | BVB |
| isbn | 9789814273213 9789814273220 981427321X 9814273228 |
| language | English |
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| physical | 1 Online-Ressource (ix, 742 pages) |
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| publishDate | 2010 |
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| publisher | World Scientific |
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| series2 | International series on advances in solid state electronics and technology |
| spelling | Schröter, Michael Verfasser aut Compact hierarchical bipolar transistor modeling with hicum Michael Schroter, Anjan Chakravorty Singapore World Scientific ©2010 1 Online-Ressource (ix, 742 pages) txt rdacontent c rdamedia cr rdacarrier International series on advances in solid state electronics and technology Includes bibliographical references and index Note continued: 11.3. Model deployment for circuit design -- References -- ch. 12 Future Trends -- 12.1. Technology challenges -- 12.2. Future applications -- 12.3. Technology trends -- 12.4. Physical limitations and device modeling -- References Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models Bipolar transistors / Design and construction Digital electronics / Design and construction Engineering Electrical engineering TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Bipolartransistor swd Schaltungsentwurf swd Bipolar transistors / Mathematical models fast Ingenieurwissenschaften Mathematisches Modell Bipolar transistors Mathematical models Schaltungsentwurf (DE-588)4179389-4 gnd rswk-swf Bipolartransistor (DE-588)4145669-5 gnd rswk-swf Bipolartransistor (DE-588)4145669-5 s Schaltungsentwurf (DE-588)4179389-4 s 1\p DE-604 Chakravorty, Anjan Sonstige oth http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=374822 Aggregator Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Schröter, Michael Compact hierarchical bipolar transistor modeling with hicum Bipolar transistors / Design and construction Digital electronics / Design and construction Engineering Electrical engineering TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Bipolartransistor swd Schaltungsentwurf swd Bipolar transistors / Mathematical models fast Ingenieurwissenschaften Mathematisches Modell Bipolar transistors Mathematical models Schaltungsentwurf (DE-588)4179389-4 gnd Bipolartransistor (DE-588)4145669-5 gnd |
| subject_GND | (DE-588)4179389-4 (DE-588)4145669-5 |
| title | Compact hierarchical bipolar transistor modeling with hicum |
| title_auth | Compact hierarchical bipolar transistor modeling with hicum |
| title_exact_search | Compact hierarchical bipolar transistor modeling with hicum |
| title_full | Compact hierarchical bipolar transistor modeling with hicum Michael Schroter, Anjan Chakravorty |
| title_fullStr | Compact hierarchical bipolar transistor modeling with hicum Michael Schroter, Anjan Chakravorty |
| title_full_unstemmed | Compact hierarchical bipolar transistor modeling with hicum Michael Schroter, Anjan Chakravorty |
| title_short | Compact hierarchical bipolar transistor modeling with hicum |
| title_sort | compact hierarchical bipolar transistor modeling with hicum |
| topic | Bipolar transistors / Design and construction Digital electronics / Design and construction Engineering Electrical engineering TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Bipolartransistor swd Schaltungsentwurf swd Bipolar transistors / Mathematical models fast Ingenieurwissenschaften Mathematisches Modell Bipolar transistors Mathematical models Schaltungsentwurf (DE-588)4179389-4 gnd Bipolartransistor (DE-588)4145669-5 gnd |
| topic_facet | Bipolar transistors / Design and construction Digital electronics / Design and construction Engineering Electrical engineering TECHNOLOGY & ENGINEERING / Electronics / Transistors Bipolartransistor Schaltungsentwurf Bipolar transistors / Mathematical models Ingenieurwissenschaften Mathematisches Modell Bipolar transistors Mathematical models |
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