MOSFET modeling for circuit analysis and design:
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Singapore
World Scientific
c2007
|
| Series: | International series on advances in solid state electronics and technology
|
| Subjects: | |
| Online Access: | FAW01 FAW02 Volltext |
| Item Description: | Includes bibliographical references and index Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex |
| Physical Description: | 1 Online-Ressource (xxiv, 418 p.) |
| ISBN: | 9789812568106 9789812707598 9812568107 981270759X |
Staff View
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV043097424 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 151126s2007 |||| o||u| ||||||eng d | ||
| 020 | |a 9789812568106 |9 978-981-256-810-6 | ||
| 020 | |a 9789812707598 |c electronic bk. |9 978-981-270-759-8 | ||
| 020 | |a 9812568107 |9 981-256-810-7 | ||
| 020 | |a 981270759X |c electronic bk. |9 981-270-759-X | ||
| 035 | |a (OCoLC)648317008 | ||
| 035 | |a (DE-599)BVBBV043097424 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-1046 |a DE-1047 | ||
| 082 | 0 | |a 621.3815/284 |2 22 | |
| 100 | 1 | |a Galup-Montoro, Carlos |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a MOSFET modeling for circuit analysis and design |c Carlos Galup-Montoro, Márcio Cherem Schneider |
| 264 | 1 | |a Singapore |b World Scientific |c c2007 | |
| 300 | |a 1 Online-Ressource (xxiv, 418 p.) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a International series on advances in solid state electronics and technology | |
| 500 | |a Includes bibliographical references and index | ||
| 500 | |a Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension | ||
| 500 | |a This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex | ||
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Transistors |2 bisacsh | |
| 650 | 7 | |a Field-effect transistors / Mathematical models |2 fast | |
| 650 | 7 | |a Metal oxide semiconductor field-effect transistors / Mathematical models |2 fast | |
| 650 | 4 | |a Mathematisches Modell | |
| 650 | 4 | |a Metal oxide semiconductor field-effect transistors |x Mathematical models | |
| 650 | 4 | |a Field-effect transistors |x Mathematical models | |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Schaltungsentwurf |0 (DE-588)4179389-4 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 0 | 1 | |a Schaltungsentwurf |0 (DE-588)4179389-4 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Schneider, Márcio Cherem |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203859 |x Aggregator |3 Volltext |
| 912 | |a ZDB-4-EBA | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-028521616 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203859 |l FAW01 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
| 966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203859 |l FAW02 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
Record in the Search Index
| _version_ | 1804175504007233536 |
|---|---|
| any_adam_object | |
| author | Galup-Montoro, Carlos |
| author_facet | Galup-Montoro, Carlos |
| author_role | aut |
| author_sort | Galup-Montoro, Carlos |
| author_variant | c g m cgm |
| building | Verbundindex |
| bvnumber | BV043097424 |
| collection | ZDB-4-EBA |
| ctrlnum | (OCoLC)648317008 (DE-599)BVBBV043097424 |
| dewey-full | 621.3815/284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/284 |
| dewey-search | 621.3815/284 |
| dewey-sort | 3621.3815 3284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03654nmm a2200553zc 4500</leader><controlfield tag="001">BV043097424</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">151126s2007 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789812568106</subfield><subfield code="9">978-981-256-810-6</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789812707598</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">978-981-270-759-8</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812568107</subfield><subfield code="9">981-256-810-7</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">981270759X</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">981-270-759-X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)648317008</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV043097424</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1046</subfield><subfield code="a">DE-1047</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/284</subfield><subfield code="2">22</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Galup-Montoro, Carlos</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">MOSFET modeling for circuit analysis and design</subfield><subfield code="c">Carlos Galup-Montoro, Márcio Cherem Schneider</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Singapore</subfield><subfield code="b">World Scientific</subfield><subfield code="c">c2007</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (xxiv, 418 p.)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">International series on advances in solid state electronics and technology</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Transistors</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Field-effect transistors / Mathematical models</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Metal oxide semiconductor field-effect transistors / Mathematical models</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Mathematisches Modell</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductor field-effect transistors</subfield><subfield code="x">Mathematical models</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Field-effect transistors</subfield><subfield code="x">Mathematical models</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Schaltungsentwurf</subfield><subfield code="0">(DE-588)4179389-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Schaltungsentwurf</subfield><subfield code="0">(DE-588)4179389-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Schneider, Márcio Cherem</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203859</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-028521616</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203859</subfield><subfield code="l">FAW01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203859</subfield><subfield code="l">FAW02</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV043097424 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:17:20Z |
| institution | BVB |
| isbn | 9789812568106 9789812707598 9812568107 981270759X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028521616 |
| oclc_num | 648317008 |
| open_access_boolean | |
| owner | DE-1046 DE-1047 |
| owner_facet | DE-1046 DE-1047 |
| physical | 1 Online-Ressource (xxiv, 418 p.) |
| psigel | ZDB-4-EBA ZDB-4-EBA FAW_PDA_EBA |
| publishDate | 2007 |
| publishDateSearch | 2007 |
| publishDateSort | 2007 |
| publisher | World Scientific |
| record_format | marc |
| series2 | International series on advances in solid state electronics and technology |
| spelling | Galup-Montoro, Carlos Verfasser aut MOSFET modeling for circuit analysis and design Carlos Galup-Montoro, Márcio Cherem Schneider Singapore World Scientific c2007 1 Online-Ressource (xxiv, 418 p.) txt rdacontent c rdamedia cr rdacarrier International series on advances in solid state electronics and technology Includes bibliographical references and index Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Field-effect transistors / Mathematical models fast Metal oxide semiconductor field-effect transistors / Mathematical models fast Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd rswk-swf Schaltungsentwurf (DE-588)4179389-4 gnd rswk-swf MOS-FET (DE-588)4207266-9 s Schaltungsentwurf (DE-588)4179389-4 s 1\p DE-604 Schneider, Márcio Cherem Sonstige oth http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203859 Aggregator Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Galup-Montoro, Carlos MOSFET modeling for circuit analysis and design TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Field-effect transistors / Mathematical models fast Metal oxide semiconductor field-effect transistors / Mathematical models fast Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd Schaltungsentwurf (DE-588)4179389-4 gnd |
| subject_GND | (DE-588)4207266-9 (DE-588)4179389-4 |
| title | MOSFET modeling for circuit analysis and design |
| title_auth | MOSFET modeling for circuit analysis and design |
| title_exact_search | MOSFET modeling for circuit analysis and design |
| title_full | MOSFET modeling for circuit analysis and design Carlos Galup-Montoro, Márcio Cherem Schneider |
| title_fullStr | MOSFET modeling for circuit analysis and design Carlos Galup-Montoro, Márcio Cherem Schneider |
| title_full_unstemmed | MOSFET modeling for circuit analysis and design Carlos Galup-Montoro, Márcio Cherem Schneider |
| title_short | MOSFET modeling for circuit analysis and design |
| title_sort | mosfet modeling for circuit analysis and design |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Field-effect transistors / Mathematical models fast Metal oxide semiconductor field-effect transistors / Mathematical models fast Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd Schaltungsentwurf (DE-588)4179389-4 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Transistors Field-effect transistors / Mathematical models Metal oxide semiconductor field-effect transistors / Mathematical models Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Field-effect transistors Mathematical models MOS-FET Schaltungsentwurf |
| url | http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203859 |
| work_keys_str_mv | AT galupmontorocarlos mosfetmodelingforcircuitanalysisanddesign AT schneidermarciocherem mosfetmodelingforcircuitanalysisanddesign |