MOSFET modeling for circuit analysis and design:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore
World Scientific
c2007
|
| Schriftenreihe: | International series on advances in solid state electronics and technology
|
| Schlagworte: | |
| Online-Zugang: | FAW01 FAW02 Volltext |
| Beschreibung: | Includes bibliographical references and index Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex |
| Beschreibung: | 1 Online-Ressource (xxiv, 418 p.) |
| ISBN: | 9789812568106 9789812707598 9812568107 981270759X |
Internformat
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| 500 | |a Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension | ||
| 500 | |a This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex | ||
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Datensatz im Suchindex
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| author | Galup-Montoro, Carlos |
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| building | Verbundindex |
| bvnumber | BV043097424 |
| collection | ZDB-4-EBA |
| ctrlnum | (OCoLC)648317008 (DE-599)BVBBV043097424 |
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| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:17:20Z |
| institution | BVB |
| isbn | 9789812568106 9789812707598 9812568107 981270759X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028521616 |
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| physical | 1 Online-Ressource (xxiv, 418 p.) |
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| publishDate | 2007 |
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| publisher | World Scientific |
| record_format | marc |
| series2 | International series on advances in solid state electronics and technology |
| spelling | Galup-Montoro, Carlos Verfasser aut MOSFET modeling for circuit analysis and design Carlos Galup-Montoro, Márcio Cherem Schneider Singapore World Scientific c2007 1 Online-Ressource (xxiv, 418 p.) txt rdacontent c rdamedia cr rdacarrier International series on advances in solid state electronics and technology Includes bibliographical references and index Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Field-effect transistors / Mathematical models fast Metal oxide semiconductor field-effect transistors / Mathematical models fast Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd rswk-swf Schaltungsentwurf (DE-588)4179389-4 gnd rswk-swf MOS-FET (DE-588)4207266-9 s Schaltungsentwurf (DE-588)4179389-4 s 1\p DE-604 Schneider, Márcio Cherem Sonstige oth http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203859 Aggregator Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Galup-Montoro, Carlos MOSFET modeling for circuit analysis and design TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Field-effect transistors / Mathematical models fast Metal oxide semiconductor field-effect transistors / Mathematical models fast Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd Schaltungsentwurf (DE-588)4179389-4 gnd |
| subject_GND | (DE-588)4207266-9 (DE-588)4179389-4 |
| title | MOSFET modeling for circuit analysis and design |
| title_auth | MOSFET modeling for circuit analysis and design |
| title_exact_search | MOSFET modeling for circuit analysis and design |
| title_full | MOSFET modeling for circuit analysis and design Carlos Galup-Montoro, Márcio Cherem Schneider |
| title_fullStr | MOSFET modeling for circuit analysis and design Carlos Galup-Montoro, Márcio Cherem Schneider |
| title_full_unstemmed | MOSFET modeling for circuit analysis and design Carlos Galup-Montoro, Márcio Cherem Schneider |
| title_short | MOSFET modeling for circuit analysis and design |
| title_sort | mosfet modeling for circuit analysis and design |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Transistors bisacsh Field-effect transistors / Mathematical models fast Metal oxide semiconductor field-effect transistors / Mathematical models fast Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd Schaltungsentwurf (DE-588)4179389-4 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Transistors Field-effect transistors / Mathematical models Metal oxide semiconductor field-effect transistors / Mathematical models Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Field-effect transistors Mathematical models MOS-FET Schaltungsentwurf |
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