Radiation defect engineering:
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
New Jersey
World Scientific
c2005
|
| Series: | Selected topics in electronics and systems
v. 37 |
| Subjects: | |
| Online Access: | FAW01 FAW02 Volltext |
| Item Description: | Reprinted from: International journal of high speed electronics and systems, v. 15, no. 1, 2005 Includes bibliographical references and index Preface; Contents; 1 Ion-S timulated Processes; 2 Transmutation Doping of Semiconductors by Charged Particles; 3 Doping of Semiconductors Using Radiation Defects; 4 Formation of Buried Porous and Damaged Layers; References; Index The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials |
| Physical Description: | 1 Online-Ressource (viii, 253 p.) |
| ISBN: | 9789812703194 9812565213 9812703195 |
Staff View
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| 500 | |a Includes bibliographical references and index | ||
| 500 | |a Preface; Contents; 1 Ion-S timulated Processes; 2 Transmutation Doping of Semiconductors by Charged Particles; 3 Doping of Semiconductors Using Radiation Defects; 4 Formation of Buried Porous and Damaged Layers; References; Index | ||
| 500 | |a The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials | ||
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| 650 | 4 | |a Semiconductor doping | |
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Record in the Search Index
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| dewey-sort | 3621.38152 |
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:17:10Z |
| institution | BVB |
| isbn | 9789812703194 9812565213 9812703195 |
| language | English |
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| spelling | Kozlovskiĭ, V. V., (Vitaliĭ Vasilʹevich) Verfasser aut Radiation defect engineering Kozlovski Vitali, Abrosimova Vera International journal of high speed electronics and systems New Jersey World Scientific c2005 1 Online-Ressource (viii, 253 p.) txt rdacontent c rdamedia cr rdacarrier Selected topics in electronics and systems v. 37 Reprinted from: International journal of high speed electronics and systems, v. 15, no. 1, 2005 Includes bibliographical references and index Preface; Contents; 1 Ion-S timulated Processes; 2 Transmutation Doping of Semiconductors by Charged Particles; 3 Doping of Semiconductors Using Radiation Defects; 4 Formation of Buried Porous and Damaged Layers; References; Index The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Semiconductor doping fast Semiconductors / Effect of radiation on fast Semiconductor doping Semiconductors Effect of radiation on Halbleiter (DE-588)4022993-2 gnd rswk-swf Ionenbestrahlung (DE-588)4335201-7 gnd rswk-swf Dotierung (DE-588)4130672-7 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Dotierung (DE-588)4130672-7 s Ionenbestrahlung (DE-588)4335201-7 s 1\p DE-604 Abrosimova, Vera Sonstige oth http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=174688 Aggregator Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Kozlovskiĭ, V. V., (Vitaliĭ Vasilʹevich) Radiation defect engineering TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Semiconductor doping fast Semiconductors / Effect of radiation on fast Semiconductor doping Semiconductors Effect of radiation on Halbleiter (DE-588)4022993-2 gnd Ionenbestrahlung (DE-588)4335201-7 gnd Dotierung (DE-588)4130672-7 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4335201-7 (DE-588)4130672-7 |
| title | Radiation defect engineering |
| title_alt | International journal of high speed electronics and systems |
| title_auth | Radiation defect engineering |
| title_exact_search | Radiation defect engineering |
| title_full | Radiation defect engineering Kozlovski Vitali, Abrosimova Vera |
| title_fullStr | Radiation defect engineering Kozlovski Vitali, Abrosimova Vera |
| title_full_unstemmed | Radiation defect engineering Kozlovski Vitali, Abrosimova Vera |
| title_short | Radiation defect engineering |
| title_sort | radiation defect engineering |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Semiconductor doping fast Semiconductors / Effect of radiation on fast Semiconductor doping Semiconductors Effect of radiation on Halbleiter (DE-588)4022993-2 gnd Ionenbestrahlung (DE-588)4335201-7 gnd Dotierung (DE-588)4130672-7 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Solid State TECHNOLOGY & ENGINEERING / Electronics / Semiconductors Semiconductor doping Semiconductors / Effect of radiation on Semiconductors Effect of radiation on Halbleiter Ionenbestrahlung Dotierung |
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