Radiation defect engineering:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
New Jersey
World Scientific
c2005
|
| Schriftenreihe: | Selected topics in electronics and systems
v. 37 |
| Schlagworte: | |
| Online-Zugang: | FAW01 FAW02 Volltext |
| Beschreibung: | Reprinted from: International journal of high speed electronics and systems, v. 15, no. 1, 2005 Includes bibliographical references and index Preface; Contents; 1 Ion-S timulated Processes; 2 Transmutation Doping of Semiconductors by Charged Particles; 3 Doping of Semiconductors Using Radiation Defects; 4 Formation of Buried Porous and Damaged Layers; References; Index The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials |
| Beschreibung: | 1 Online-Ressource (viii, 253 p.) |
| ISBN: | 9789812703194 9812565213 9812703195 |
Internformat
MARC
| LEADER | 00000nmm a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV043091676 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 151126s2005 |||| o||u| ||||||eng d | ||
| 020 | |a 9789812703194 |c electronic bk. |9 978-981-270-319-4 | ||
| 020 | |a 9812565213 |9 981-256-521-3 | ||
| 020 | |a 9812703195 |c electronic bk. |9 981-270-319-5 | ||
| 035 | |a (OCoLC)614991499 | ||
| 035 | |a (DE-599)BVBBV043091676 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-1046 |a DE-1047 | ||
| 082 | 0 | |a 621.38152 |2 22 | |
| 100 | 1 | |a Kozlovskiĭ, V. V., (Vitaliĭ Vasilʹevich) |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Radiation defect engineering |c Kozlovski Vitali, Abrosimova Vera |
| 246 | 1 | 3 | |a International journal of high speed electronics and systems |
| 264 | 1 | |a New Jersey |b World Scientific |c c2005 | |
| 300 | |a 1 Online-Ressource (viii, 253 p.) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a Selected topics in electronics and systems |v v. 37 | |
| 500 | |a Reprinted from: International journal of high speed electronics and systems, v. 15, no. 1, 2005 | ||
| 500 | |a Includes bibliographical references and index | ||
| 500 | |a Preface; Contents; 1 Ion-S timulated Processes; 2 Transmutation Doping of Semiconductors by Charged Particles; 3 Doping of Semiconductors Using Radiation Defects; 4 Formation of Buried Porous and Damaged Layers; References; Index | ||
| 500 | |a The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials | ||
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Solid State |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Semiconductors |2 bisacsh | |
| 650 | 7 | |a Semiconductor doping |2 fast | |
| 650 | 7 | |a Semiconductors / Effect of radiation on |2 fast | |
| 650 | 4 | |a Semiconductor doping | |
| 650 | 4 | |a Semiconductors |x Effect of radiation on | |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ionenbestrahlung |0 (DE-588)4335201-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Dotierung |0 (DE-588)4130672-7 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Dotierung |0 (DE-588)4130672-7 |D s |
| 689 | 0 | 2 | |a Ionenbestrahlung |0 (DE-588)4335201-7 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Abrosimova, Vera |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=174688 |x Aggregator |3 Volltext |
| 912 | |a ZDB-4-EBA | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-028515868 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=174688 |l FAW01 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
| 966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=174688 |l FAW02 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804175493192220672 |
|---|---|
| any_adam_object | |
| author | Kozlovskiĭ, V. V., (Vitaliĭ Vasilʹevich) |
| author_facet | Kozlovskiĭ, V. V., (Vitaliĭ Vasilʹevich) |
| author_role | aut |
| author_sort | Kozlovskiĭ, V. V., (Vitaliĭ Vasilʹevich) |
| author_variant | v v v v k vvvv vvvvk |
| building | Verbundindex |
| bvnumber | BV043091676 |
| collection | ZDB-4-EBA |
| ctrlnum | (OCoLC)614991499 (DE-599)BVBBV043091676 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03442nmm a2200589zcb4500</leader><controlfield tag="001">BV043091676</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">151126s2005 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789812703194</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">978-981-270-319-4</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812565213</subfield><subfield code="9">981-256-521-3</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812703195</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">981-270-319-5</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)614991499</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV043091676</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1046</subfield><subfield code="a">DE-1047</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.38152</subfield><subfield code="2">22</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Kozlovskiĭ, V. V., (Vitaliĭ Vasilʹevich)</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Radiation defect engineering</subfield><subfield code="c">Kozlovski Vitali, Abrosimova Vera</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">International journal of high speed electronics and systems</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New Jersey</subfield><subfield code="b">World Scientific</subfield><subfield code="c">c2005</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (viii, 253 p.)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Selected topics in electronics and systems</subfield><subfield code="v">v. 37</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Reprinted from: International journal of high speed electronics and systems, v. 15, no. 1, 2005</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Preface; Contents; 1 Ion-S timulated Processes; 2 Transmutation Doping of Semiconductors by Charged Particles; 3 Doping of Semiconductors Using Radiation Defects; 4 Formation of Buried Porous and Damaged Layers; References; Index</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Solid State</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Semiconductors</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductor doping</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors / Effect of radiation on</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor doping</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Effect of radiation on</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ionenbestrahlung</subfield><subfield code="0">(DE-588)4335201-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Dotierung</subfield><subfield code="0">(DE-588)4130672-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Dotierung</subfield><subfield code="0">(DE-588)4130672-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Ionenbestrahlung</subfield><subfield code="0">(DE-588)4335201-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Abrosimova, Vera</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=174688</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-028515868</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=174688</subfield><subfield code="l">FAW01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=174688</subfield><subfield code="l">FAW02</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV043091676 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:17:10Z |
| institution | BVB |
| isbn | 9789812703194 9812565213 9812703195 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028515868 |
| oclc_num | 614991499 |
| open_access_boolean | |
| owner | DE-1046 DE-1047 |
| owner_facet | DE-1046 DE-1047 |
| physical | 1 Online-Ressource (viii, 253 p.) |
| psigel | ZDB-4-EBA ZDB-4-EBA FAW_PDA_EBA |
| publishDate | 2005 |
| publishDateSearch | 2005 |
| publishDateSort | 2005 |
| publisher | World Scientific |
| record_format | marc |
| series2 | Selected topics in electronics and systems |
| spelling | Kozlovskiĭ, V. V., (Vitaliĭ Vasilʹevich) Verfasser aut Radiation defect engineering Kozlovski Vitali, Abrosimova Vera International journal of high speed electronics and systems New Jersey World Scientific c2005 1 Online-Ressource (viii, 253 p.) txt rdacontent c rdamedia cr rdacarrier Selected topics in electronics and systems v. 37 Reprinted from: International journal of high speed electronics and systems, v. 15, no. 1, 2005 Includes bibliographical references and index Preface; Contents; 1 Ion-S timulated Processes; 2 Transmutation Doping of Semiconductors by Charged Particles; 3 Doping of Semiconductors Using Radiation Defects; 4 Formation of Buried Porous and Damaged Layers; References; Index The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Semiconductor doping fast Semiconductors / Effect of radiation on fast Semiconductor doping Semiconductors Effect of radiation on Halbleiter (DE-588)4022993-2 gnd rswk-swf Ionenbestrahlung (DE-588)4335201-7 gnd rswk-swf Dotierung (DE-588)4130672-7 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Dotierung (DE-588)4130672-7 s Ionenbestrahlung (DE-588)4335201-7 s 1\p DE-604 Abrosimova, Vera Sonstige oth http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=174688 Aggregator Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Kozlovskiĭ, V. V., (Vitaliĭ Vasilʹevich) Radiation defect engineering TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Semiconductor doping fast Semiconductors / Effect of radiation on fast Semiconductor doping Semiconductors Effect of radiation on Halbleiter (DE-588)4022993-2 gnd Ionenbestrahlung (DE-588)4335201-7 gnd Dotierung (DE-588)4130672-7 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4335201-7 (DE-588)4130672-7 |
| title | Radiation defect engineering |
| title_alt | International journal of high speed electronics and systems |
| title_auth | Radiation defect engineering |
| title_exact_search | Radiation defect engineering |
| title_full | Radiation defect engineering Kozlovski Vitali, Abrosimova Vera |
| title_fullStr | Radiation defect engineering Kozlovski Vitali, Abrosimova Vera |
| title_full_unstemmed | Radiation defect engineering Kozlovski Vitali, Abrosimova Vera |
| title_short | Radiation defect engineering |
| title_sort | radiation defect engineering |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Semiconductor doping fast Semiconductors / Effect of radiation on fast Semiconductor doping Semiconductors Effect of radiation on Halbleiter (DE-588)4022993-2 gnd Ionenbestrahlung (DE-588)4335201-7 gnd Dotierung (DE-588)4130672-7 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Solid State TECHNOLOGY & ENGINEERING / Electronics / Semiconductors Semiconductor doping Semiconductors / Effect of radiation on Semiconductors Effect of radiation on Halbleiter Ionenbestrahlung Dotierung |
| url | http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=174688 |
| work_keys_str_mv | AT kozlovskiivvvitaliivasilʹevich radiationdefectengineering AT abrosimovavera radiationdefectengineering AT kozlovskiivvvitaliivasilʹevich internationaljournalofhighspeedelectronicsandsystems AT abrosimovavera internationaljournalofhighspeedelectronicsandsystems |