Electromigration in ULSI interconnections:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore
World Scientific Pub. Co.
©2010
|
| Schriftenreihe: | International series on advances in solid state electronics and technology
|
| Schlagworte: | |
| Online-Zugang: | FAW01 FAW02 Volltext |
| Beschreibung: | Includes bibliographical references and index 1. Introduction. 1.1. What is electromigration? 1.2. Importance of electromigration. 1.3. Outlines of this book -- 2. History of electromigration. 2.1. Understanding the physics of electromigration. 2.2. Electromigration lifetime modeling. 2.3. Electromigration lifetime improvement. 2.4. Electromigration Aware IC design -- 3. Experimental studies of Al interconnections. 3.1. Introduction. 3.2. Process-induced failure physics. 3.3. Design-induced failure mechanisms. 3.4. Self-induced process during EM. 3.5. Electromigration test structure design. 3.6. Package-Level Electromigration Test (PET). 3.7. Rapid electromigration test. 3.8. Practical consideration in electromigration testing. 3.9. Failure modes in electromigration. 3.10. Test data analysis. 3.11. Failure analysis on EM failures. 3.12. Conclusion -- 4. Experimental studies of Cu interconnections. 4.1. Different in interconnect processing and its impact on EM physics. 4.2. Process-induced failure physics. 4.3. Design-induced failure mechanism. 4.4. Electromigration testing. 4.5. Statistics of Cu electromigration -- 5. Numerical modeling of electromigration. 5.1. 1D continuum electromigration modeling. 5.2. 2D EM modeling. 5.3. Electromigration simulation using atomic flux divergence and finite element analaysis. 5.4. Monte Carlo simulation of electromigration. 5.5. Resistance change modeling -- 6. Future challenges. 6.1. Electromigration modeling. 6.2. EDA tool development. 6.3. Physics of electromigration. 6.4. Electromigration testing. 6.5. New failure mechanism for interconnects. 6.6. Alternative interconnect structure. 6.7. Alternative interconnect system Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed |
| Beschreibung: | 1 Online-Ressource (xix, 291 pages) |
| ISBN: | 9789814273329 9789814273336 9814273325 9814273333 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV043090388 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 151126s2010 |||| o||u| ||||||eng d | ||
| 020 | |a 9789814273329 |9 978-981-4273-32-9 | ||
| 020 | |a 9789814273336 |c electronic bk. |9 978-981-4273-33-6 | ||
| 020 | |a 9814273325 |9 981-4273-32-5 | ||
| 020 | |a 9814273333 |c electronic bk. |9 981-4273-33-3 | ||
| 035 | |a (OCoLC)714877548 | ||
| 035 | |a (DE-599)BVBBV043090388 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-1046 |a DE-1047 | ||
| 082 | 0 | |a 621.3815284 |2 22 | |
| 100 | 1 | |a Tan, Cher Ming |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Electromigration in ULSI interconnections |c Cher Ming Tan |
| 264 | 1 | |a Singapore |b World Scientific Pub. Co. |c ©2010 | |
| 300 | |a 1 Online-Ressource (xix, 291 pages) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a International series on advances in solid state electronics and technology | |
| 500 | |a Includes bibliographical references and index | ||
| 500 | |a 1. Introduction. 1.1. What is electromigration? 1.2. Importance of electromigration. 1.3. Outlines of this book -- 2. History of electromigration. 2.1. Understanding the physics of electromigration. 2.2. Electromigration lifetime modeling. 2.3. Electromigration lifetime improvement. 2.4. Electromigration Aware IC design -- 3. Experimental studies of Al interconnections. 3.1. Introduction. 3.2. Process-induced failure physics. 3.3. Design-induced failure mechanisms. 3.4. Self-induced process during EM. 3.5. Electromigration test structure design. 3.6. Package-Level Electromigration Test (PET). 3.7. Rapid electromigration test. 3.8. Practical consideration in electromigration testing. 3.9. Failure modes in electromigration. 3.10. Test data analysis. 3.11. Failure analysis on EM failures. 3.12. Conclusion -- 4. Experimental studies of Cu interconnections. 4.1. Different in interconnect processing and its impact on EM physics. 4.2. Process-induced failure physics. 4.3. Design-induced failure mechanism. 4.4. Electromigration testing. 4.5. Statistics of Cu electromigration -- 5. Numerical modeling of electromigration. 5.1. 1D continuum electromigration modeling. 5.2. 2D EM modeling. 5.3. Electromigration simulation using atomic flux divergence and finite element analaysis. 5.4. Monte Carlo simulation of electromigration. 5.5. Resistance change modeling -- 6. Future challenges. 6.1. Electromigration modeling. 6.2. EDA tool development. 6.3. Physics of electromigration. 6.4. Electromigration testing. 6.5. New failure mechanism for interconnects. 6.6. Alternative interconnect structure. 6.7. Alternative interconnect system | ||
| 500 | |a Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed | ||
| 650 | 4 | |a Interconnects (Integrated circuit technology) | |
| 650 | 4 | |a Engineering | |
| 650 | 4 | |a Electrical engineering | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Circuits / General |2 bisacsh | |
| 650 | 7 | |a Electrodiffusion |2 fast | |
| 650 | 7 | |a Integrated circuits / Ultra large scale integration |2 fast | |
| 650 | 4 | |a Ingenieurwissenschaften | |
| 650 | 4 | |a Integrated circuits |x Ultra large scale integration | |
| 650 | 4 | |a Electrodiffusion | |
| 710 | 2 | |a World Scientific (Firm) |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=374811 |x Aggregator |3 Volltext |
| 912 | |a ZDB-4-EBA | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-028514579 | ||
| 966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=374811 |l FAW01 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
| 966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=374811 |l FAW02 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804175490787835904 |
|---|---|
| any_adam_object | |
| author | Tan, Cher Ming |
| author_facet | Tan, Cher Ming |
| author_role | aut |
| author_sort | Tan, Cher Ming |
| author_variant | c m t cm cmt |
| building | Verbundindex |
| bvnumber | BV043090388 |
| collection | ZDB-4-EBA |
| ctrlnum | (OCoLC)714877548 (DE-599)BVBBV043090388 |
| dewey-full | 621.3815284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815284 |
| dewey-search | 621.3815284 |
| dewey-sort | 3621.3815284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>05390nmm a2200529zc 4500</leader><controlfield tag="001">BV043090388</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">151126s2010 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789814273329</subfield><subfield code="9">978-981-4273-32-9</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789814273336</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">978-981-4273-33-6</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9814273325</subfield><subfield code="9">981-4273-32-5</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9814273333</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">981-4273-33-3</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)714877548</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV043090388</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1046</subfield><subfield code="a">DE-1047</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815284</subfield><subfield code="2">22</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Tan, Cher Ming</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electromigration in ULSI interconnections</subfield><subfield code="c">Cher Ming Tan</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Singapore</subfield><subfield code="b">World Scientific Pub. Co.</subfield><subfield code="c">©2010</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (xix, 291 pages)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">International series on advances in solid state electronics and technology</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">1. Introduction. 1.1. What is electromigration? 1.2. Importance of electromigration. 1.3. Outlines of this book -- 2. History of electromigration. 2.1. Understanding the physics of electromigration. 2.2. Electromigration lifetime modeling. 2.3. Electromigration lifetime improvement. 2.4. Electromigration Aware IC design -- 3. Experimental studies of Al interconnections. 3.1. Introduction. 3.2. Process-induced failure physics. 3.3. Design-induced failure mechanisms. 3.4. Self-induced process during EM. 3.5. Electromigration test structure design. 3.6. Package-Level Electromigration Test (PET). 3.7. Rapid electromigration test. 3.8. Practical consideration in electromigration testing. 3.9. Failure modes in electromigration. 3.10. Test data analysis. 3.11. Failure analysis on EM failures. 3.12. Conclusion -- 4. Experimental studies of Cu interconnections. 4.1. Different in interconnect processing and its impact on EM physics. 4.2. Process-induced failure physics. 4.3. Design-induced failure mechanism. 4.4. Electromigration testing. 4.5. Statistics of Cu electromigration -- 5. Numerical modeling of electromigration. 5.1. 1D continuum electromigration modeling. 5.2. 2D EM modeling. 5.3. Electromigration simulation using atomic flux divergence and finite element analaysis. 5.4. Monte Carlo simulation of electromigration. 5.5. Resistance change modeling -- 6. Future challenges. 6.1. Electromigration modeling. 6.2. EDA tool development. 6.3. Physics of electromigration. 6.4. Electromigration testing. 6.5. New failure mechanism for interconnects. 6.6. Alternative interconnect structure. 6.7. Alternative interconnect system</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Interconnects (Integrated circuit technology)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Circuits / General</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Electrodiffusion</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Integrated circuits / Ultra large scale integration</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ingenieurwissenschaften</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuits</subfield><subfield code="x">Ultra large scale integration</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrodiffusion</subfield></datafield><datafield tag="710" ind1="2" ind2=" "><subfield code="a">World Scientific (Firm)</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=374811</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-028514579</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=374811</subfield><subfield code="l">FAW01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=374811</subfield><subfield code="l">FAW02</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV043090388 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:17:07Z |
| institution | BVB |
| isbn | 9789814273329 9789814273336 9814273325 9814273333 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028514579 |
| oclc_num | 714877548 |
| open_access_boolean | |
| owner | DE-1046 DE-1047 |
| owner_facet | DE-1046 DE-1047 |
| physical | 1 Online-Ressource (xix, 291 pages) |
| psigel | ZDB-4-EBA ZDB-4-EBA FAW_PDA_EBA |
| publishDate | 2010 |
| publishDateSearch | 2010 |
| publishDateSort | 2010 |
| publisher | World Scientific Pub. Co. |
| record_format | marc |
| series2 | International series on advances in solid state electronics and technology |
| spelling | Tan, Cher Ming Verfasser aut Electromigration in ULSI interconnections Cher Ming Tan Singapore World Scientific Pub. Co. ©2010 1 Online-Ressource (xix, 291 pages) txt rdacontent c rdamedia cr rdacarrier International series on advances in solid state electronics and technology Includes bibliographical references and index 1. Introduction. 1.1. What is electromigration? 1.2. Importance of electromigration. 1.3. Outlines of this book -- 2. History of electromigration. 2.1. Understanding the physics of electromigration. 2.2. Electromigration lifetime modeling. 2.3. Electromigration lifetime improvement. 2.4. Electromigration Aware IC design -- 3. Experimental studies of Al interconnections. 3.1. Introduction. 3.2. Process-induced failure physics. 3.3. Design-induced failure mechanisms. 3.4. Self-induced process during EM. 3.5. Electromigration test structure design. 3.6. Package-Level Electromigration Test (PET). 3.7. Rapid electromigration test. 3.8. Practical consideration in electromigration testing. 3.9. Failure modes in electromigration. 3.10. Test data analysis. 3.11. Failure analysis on EM failures. 3.12. Conclusion -- 4. Experimental studies of Cu interconnections. 4.1. Different in interconnect processing and its impact on EM physics. 4.2. Process-induced failure physics. 4.3. Design-induced failure mechanism. 4.4. Electromigration testing. 4.5. Statistics of Cu electromigration -- 5. Numerical modeling of electromigration. 5.1. 1D continuum electromigration modeling. 5.2. 2D EM modeling. 5.3. Electromigration simulation using atomic flux divergence and finite element analaysis. 5.4. Monte Carlo simulation of electromigration. 5.5. Resistance change modeling -- 6. Future challenges. 6.1. Electromigration modeling. 6.2. EDA tool development. 6.3. Physics of electromigration. 6.4. Electromigration testing. 6.5. New failure mechanism for interconnects. 6.6. Alternative interconnect structure. 6.7. Alternative interconnect system Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed Interconnects (Integrated circuit technology) Engineering Electrical engineering TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated bisacsh TECHNOLOGY & ENGINEERING / Electronics / Circuits / General bisacsh Electrodiffusion fast Integrated circuits / Ultra large scale integration fast Ingenieurwissenschaften Integrated circuits Ultra large scale integration Electrodiffusion World Scientific (Firm) Sonstige oth http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=374811 Aggregator Volltext |
| spellingShingle | Tan, Cher Ming Electromigration in ULSI interconnections Interconnects (Integrated circuit technology) Engineering Electrical engineering TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated bisacsh TECHNOLOGY & ENGINEERING / Electronics / Circuits / General bisacsh Electrodiffusion fast Integrated circuits / Ultra large scale integration fast Ingenieurwissenschaften Integrated circuits Ultra large scale integration Electrodiffusion |
| title | Electromigration in ULSI interconnections |
| title_auth | Electromigration in ULSI interconnections |
| title_exact_search | Electromigration in ULSI interconnections |
| title_full | Electromigration in ULSI interconnections Cher Ming Tan |
| title_fullStr | Electromigration in ULSI interconnections Cher Ming Tan |
| title_full_unstemmed | Electromigration in ULSI interconnections Cher Ming Tan |
| title_short | Electromigration in ULSI interconnections |
| title_sort | electromigration in ulsi interconnections |
| topic | Interconnects (Integrated circuit technology) Engineering Electrical engineering TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated bisacsh TECHNOLOGY & ENGINEERING / Electronics / Circuits / General bisacsh Electrodiffusion fast Integrated circuits / Ultra large scale integration fast Ingenieurwissenschaften Integrated circuits Ultra large scale integration Electrodiffusion |
| topic_facet | Interconnects (Integrated circuit technology) Engineering Electrical engineering TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated TECHNOLOGY & ENGINEERING / Electronics / Circuits / General Electrodiffusion Integrated circuits / Ultra large scale integration Ingenieurwissenschaften Integrated circuits Ultra large scale integration |
| url | http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=374811 |
| work_keys_str_mv | AT tancherming electromigrationinulsiinterconnections AT worldscientificfirm electromigrationinulsiinterconnections |