Advanced high speed devices:
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Singapore
World Scientific Pub. Co.
c2010
|
| Schriftenreihe: | Selected topics in electronics and systems
v. 51 |
| Schlagworte: | |
| Online-Zugang: | FAW01 FAW02 Volltext |
| Beschreibung: | "This volume contains the proceedings of the 2008 biennial Lester Eastman Conference (LEC), which was held on the Cornell University of Delaware campus on August 5-7, 2008. Conference was known as IEEE/Cornell University Conference on High Performance Devices"--Pref Includes bibliographical references Simulation and experimental results on GaN based ultra-short planar negative differential conductivity diodes for THz power generation / B. Aslan, L.F. Eastman and Q. Diduck -- 5-terminal THz GaN based transistor with field- and space-charge control electrodes / G. Simin, M.S. Shur and R. Gaska -- Performance comparison of scaled III-V and Si ballistic nanowire MOSFETs / L. Wang ... [et al.] -- A room temperature ballistic deflection transistor for high performance applications / Q. Diduck, H. Irie and M. Margala -- Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's / T. Otsuji ... [et al.] -- Millimeter wave to terahertz in CMOS / K.K. O, S. Sankaran ... [et al.] -- The effects of increasing AlN mole fraction on the performance of AlGaN active regions containing nanometer scale compositionally inhomogeneities / A.V. Sampath ... [et al.] -- - Surface acoustic wave propagation in GaN-On-sapphire under pulsed sub-band ultraviolet illumination / V.S. Chivukula ... [et al.] -- Solar-blind single-photon 4H-SiC avalanche photodiodes / A. Vert ... [et al.] -- Monte Carlo simulations of In[symbol]Ga[symbol]As MOSFETs at 0.5 V supply voltage for high-performance CMOS / J.S. Ayubi-Moak, K. Kalna and A. Asenov -- The first 70nm 6-inch GaAs PHEMT MMIC process / H. Karimy ... [et al.] -- High-performance 50-nm metamorphic high electron-mobility transistors with high breakdown voltages / D. Xu ... [et al.] -- MBE growth and characterization of Mg-doped III-nitrides on sapphire / X. Chen ... [et al.] -- Performance of MOSFETs on reactive-ion-etched GaN surfaces / K. Tang, W. Huang, T.P. Chow -- High current density/high voltage AlGaN/GaN HFETs on sapphire / J. Shi, M. Pophristic and L.F. Eastman -- InAlN/GaN MOS-HEMT with thermally grown oxide / M. Alomari ... [et al.] -- - GaN transistors for power switching and millimeter-wave applications / T. Ueda ... [et al.] -- 4-nm AlN barrier all binary HFET with SiNx gate dielectric / T. Zimmermann ... [et al.] -- Effect of gate oxide processes on 4H-SiC MOSFETs on (000-1) oriented substrate / H. Naik, K. Tang and T.P. Chow -- Characterization and modeling of integrated diode in 1.2kV 4H-SiC vertical power MOSFET / H. Naik, Y. Wang and T.P. Chow -- Packaging and wide-pulse switching of 4 mm x 4 mm silicon carbide GTOs / H. O'Brien and M.G. Koebke -- Bi-directional scalable solid-state circuit breakers for hybrid-electric vehicles / D.P. Urciuoli and V. Veliadis Advanced High Speed Devices covers five areas of advanced device technology : terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback |
| Beschreibung: | 1 Online-Ressource (x, 192 p.) |
| ISBN: | 9789814287869 9789814287876 9814287865 9814287873 |
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| spelling | Advanced high speed devices editors, Michael S. Shur, Paul Maki Singapore World Scientific Pub. Co. c2010 1 Online-Ressource (x, 192 p.) txt rdacontent c rdamedia cr rdacarrier Selected topics in electronics and systems v. 51 "This volume contains the proceedings of the 2008 biennial Lester Eastman Conference (LEC), which was held on the Cornell University of Delaware campus on August 5-7, 2008. Conference was known as IEEE/Cornell University Conference on High Performance Devices"--Pref Includes bibliographical references Simulation and experimental results on GaN based ultra-short planar negative differential conductivity diodes for THz power generation / B. Aslan, L.F. Eastman and Q. Diduck -- 5-terminal THz GaN based transistor with field- and space-charge control electrodes / G. Simin, M.S. Shur and R. Gaska -- Performance comparison of scaled III-V and Si ballistic nanowire MOSFETs / L. Wang ... [et al.] -- A room temperature ballistic deflection transistor for high performance applications / Q. Diduck, H. Irie and M. Margala -- Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's / T. Otsuji ... [et al.] -- Millimeter wave to terahertz in CMOS / K.K. O, S. Sankaran ... [et al.] -- The effects of increasing AlN mole fraction on the performance of AlGaN active regions containing nanometer scale compositionally inhomogeneities / A.V. Sampath ... [et al.] -- - Surface acoustic wave propagation in GaN-On-sapphire under pulsed sub-band ultraviolet illumination / V.S. Chivukula ... [et al.] -- Solar-blind single-photon 4H-SiC avalanche photodiodes / A. Vert ... [et al.] -- Monte Carlo simulations of In[symbol]Ga[symbol]As MOSFETs at 0.5 V supply voltage for high-performance CMOS / J.S. Ayubi-Moak, K. Kalna and A. Asenov -- The first 70nm 6-inch GaAs PHEMT MMIC process / H. Karimy ... [et al.] -- High-performance 50-nm metamorphic high electron-mobility transistors with high breakdown voltages / D. Xu ... [et al.] -- MBE growth and characterization of Mg-doped III-nitrides on sapphire / X. Chen ... [et al.] -- Performance of MOSFETs on reactive-ion-etched GaN surfaces / K. Tang, W. Huang, T.P. Chow -- High current density/high voltage AlGaN/GaN HFETs on sapphire / J. Shi, M. Pophristic and L.F. Eastman -- InAlN/GaN MOS-HEMT with thermally grown oxide / M. Alomari ... [et al.] -- - GaN transistors for power switching and millimeter-wave applications / T. Ueda ... [et al.] -- 4-nm AlN barrier all binary HFET with SiNx gate dielectric / T. Zimmermann ... [et al.] -- Effect of gate oxide processes on 4H-SiC MOSFETs on (000-1) oriented substrate / H. Naik, K. Tang and T.P. Chow -- Characterization and modeling of integrated diode in 1.2kV 4H-SiC vertical power MOSFET / H. Naik, Y. Wang and T.P. Chow -- Packaging and wide-pulse switching of 4 mm x 4 mm silicon carbide GTOs / H. O'Brien and M.G. Koebke -- Bi-directional scalable solid-state circuit breakers for hybrid-electric vehicles / D.P. Urciuoli and V. Veliadis Advanced High Speed Devices covers five areas of advanced device technology : terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated bisacsh TECHNOLOGY & ENGINEERING / Electronics / Circuits / General bisacsh Very high speed integrated circuits Congresses Semiconductors Congresses Transistors Congresses Integrated circuits Very large scale integration Congresses (DE-588)1071861417 Konferenzschrift gnd-content Shur, Michael Sonstige oth Maki, Paul Sonstige oth World Scientific (Firm) Sonstige oth IEEE/Cornell Conference on High Performance Devices <2008, Cornell University> Sonstige oth http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=340652 Aggregator Volltext |
| spellingShingle | Advanced high speed devices TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated bisacsh TECHNOLOGY & ENGINEERING / Electronics / Circuits / General bisacsh Very high speed integrated circuits Congresses Semiconductors Congresses Transistors Congresses Integrated circuits Very large scale integration Congresses |
| subject_GND | (DE-588)1071861417 |
| title | Advanced high speed devices |
| title_auth | Advanced high speed devices |
| title_exact_search | Advanced high speed devices |
| title_full | Advanced high speed devices editors, Michael S. Shur, Paul Maki |
| title_fullStr | Advanced high speed devices editors, Michael S. Shur, Paul Maki |
| title_full_unstemmed | Advanced high speed devices editors, Michael S. Shur, Paul Maki |
| title_short | Advanced high speed devices |
| title_sort | advanced high speed devices |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated bisacsh TECHNOLOGY & ENGINEERING / Electronics / Circuits / General bisacsh Very high speed integrated circuits Congresses Semiconductors Congresses Transistors Congresses Integrated circuits Very large scale integration Congresses |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Circuits / Integrated TECHNOLOGY & ENGINEERING / Electronics / Circuits / General Very high speed integrated circuits Congresses Semiconductors Congresses Transistors Congresses Integrated circuits Very large scale integration Congresses Konferenzschrift |
| url | http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=340652 |
| work_keys_str_mv | AT shurmichael advancedhighspeeddevices AT makipaul advancedhighspeeddevices AT worldscientificfirm advancedhighspeeddevices AT ieeecornellconferenceonhighperformancedevices2008cornelluniversity advancedhighspeeddevices |