Rapid thermal processing for future semiconductor devices: proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001
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| Format: | Elektronisch E-Book |
| Sprache: | English |
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Elsevier
2003
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| Online-Zugang: | FAW01 FAW02 Volltext |
| Beschreibung: | This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies Includes bibliographical references Cover -- Copyright Page -- CONTENTS -- Preface -- RTP2001 Organization -- Chapter 1. Role of Rapid Thermal Processing in the Development of Disruptive and Non-disruptive Technologies for Semiconductor Manufacturing in the 21st Century -- Chapter 2. Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Implanted Impurities -- Chapter 3. Process and Technology Drivers for Single Wafer Processes in DRAM Manufacturing -- Chapter 4. Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals -- Chapter 5. Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication -- Chapter 6. High-Performance Poly-Si TFT and its Application to LCD -- Chapter 7. Rapid Low Temperature Photo Oxidation Processing for Advanced Poly-Si TFTs -- Chapter 8. Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing -- - Chapter 9. Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by Optical Shallow Defect Analyzer -- Chapter 10. Novel UV-assisted Rapid Thermal Annealing of Ferroelectric Materials -- Chapter 11. Rapid Thermal Annealing of (l-x)Ta2O5-xTiO2 Thin Films Formed by Metalorganic Decomposition -- Chapter 12. Hard Breakdown Characteristics in a 2.2-nm-thick SiO2 film -- Chapter 13. Rapid Thermal MOCVD Processing for InP-Based Devices -- Chapter 14. Sb Pile-up at the SiO2/Si Interface during Drive-in Process after Predeposition using SOG Source -- Chapter 15. Large Refractive Index C-S-Au Composite Film Formation by Plasma Processes -- Chapter 16. The LEVITOR 4000 system, Ultra-fast, Emissivity-independent, heating of substrates via heat conduction through thin gas layers -- Chapter 17. Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor -- - Chapter 18. The Short-period (Si14/Ge1)20 and (Si28/Ge2)10 superlattices as Buffer Layers for the Growth of Si0.75Ge0.25 Alloy Layers -- Chapter 19. Si Epitaxial Growth on the Atomic-Order Nitrided Si(l00) Surface in SiH4 Reaction -- Chapter 20. Heavy Doping Characteristics of Si Films Epitaxially Grown at 450oC by Alternately Supplied PH3 and SiH4 -- Last Page |
| Beschreibung: | 1 Online-Ressource (x, 150 pages) |
| ISBN: | 0080540260 0444513396 9780080540269 9780444513397 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV043044073 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 151123s2003 |||| o||u| ||||||eng d | ||
| 020 | |a 0080540260 |c electronic bk. |9 0-08-054026-0 | ||
| 020 | |a 0444513396 |9 0-444-51339-6 | ||
| 020 | |a 9780080540269 |c electronic bk. |9 978-0-08-054026-9 | ||
| 020 | |a 9780444513397 |9 978-0-444-51339-7 | ||
| 035 | |a (OCoLC)162131007 | ||
| 035 | |a (DE-599)BVBBV043044073 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-1046 |a DE-1047 | ||
| 082 | 0 | |a 621.3815/2 |2 22 | |
| 110 | 2 | |a International Conference on Rapid Thermal Processing for Future Semiconductor Devices < 2001, Ise-Shima, Mie, Japan> |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Rapid thermal processing for future semiconductor devices |b proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 |c edited by Hisashi Fukuda |
| 264 | 1 | |a Amsterdam |b Elsevier |c 2003 | |
| 300 | |a 1 Online-Ressource (x, 150 pages) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies | ||
| 500 | |a Includes bibliographical references | ||
| 500 | |a Cover -- Copyright Page -- CONTENTS -- Preface -- RTP2001 Organization -- Chapter 1. Role of Rapid Thermal Processing in the Development of Disruptive and Non-disruptive Technologies for Semiconductor Manufacturing in the 21st Century -- Chapter 2. Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Implanted Impurities -- Chapter 3. Process and Technology Drivers for Single Wafer Processes in DRAM Manufacturing -- Chapter 4. Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals -- Chapter 5. Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication -- Chapter 6. High-Performance Poly-Si TFT and its Application to LCD -- Chapter 7. Rapid Low Temperature Photo Oxidation Processing for Advanced Poly-Si TFTs -- Chapter 8. Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing -- | ||
| 500 | |a - Chapter 9. Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by Optical Shallow Defect Analyzer -- Chapter 10. Novel UV-assisted Rapid Thermal Annealing of Ferroelectric Materials -- Chapter 11. Rapid Thermal Annealing of (l-x)Ta2O5-xTiO2 Thin Films Formed by Metalorganic Decomposition -- Chapter 12. Hard Breakdown Characteristics in a 2.2-nm-thick SiO2 film -- Chapter 13. Rapid Thermal MOCVD Processing for InP-Based Devices -- Chapter 14. Sb Pile-up at the SiO2/Si Interface during Drive-in Process after Predeposition using SOG Source -- Chapter 15. Large Refractive Index C-S-Au Composite Film Formation by Plasma Processes -- Chapter 16. The LEVITOR 4000 system, Ultra-fast, Emissivity-independent, heating of substrates via heat conduction through thin gas layers -- Chapter 17. Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor -- | ||
| 500 | |a - Chapter 18. The Short-period (Si14/Ge1)20 and (Si28/Ge2)10 superlattices as Buffer Layers for the Growth of Si0.75Ge0.25 Alloy Layers -- Chapter 19. Si Epitaxial Growth on the Atomic-Order Nitrided Si(l00) Surface in SiH4 Reaction -- Chapter 20. Heavy Doping Characteristics of Si Films Epitaxially Grown at 450oC by Alternately Supplied PH3 and SiH4 -- Last Page | ||
| 650 | 4 | |a Semiconductors / Heat treatment / Congresses. Rapid thermal processing / Congresses | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Solid State |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Semiconductors |2 bisacsh | |
| 650 | 7 | |a Rapid thermal processing |2 fast | |
| 650 | 7 | |a Semiconductors / Heat treatment |2 fast | |
| 650 | 4 | |a Semiconductors |x Heat treatment |v Congresses | |
| 650 | 4 | |a Rapid thermal processing |v Congresses | |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Rapid thermal processing |0 (DE-588)4347011-7 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Rapid thermal processing |0 (DE-588)4347011-7 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Fukuda, Hisashi |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203153 |x Aggregator |3 Volltext |
| 912 | |a ZDB-4-EBA | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-028468610 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203153 |l FAW01 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
| 966 | e | |u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203153 |l FAW02 |p ZDB-4-EBA |q FAW_PDA_EBA |x Aggregator |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804175409473912832 |
|---|---|
| any_adam_object | |
| author_corporate | International Conference on Rapid Thermal Processing for Future Semiconductor Devices < 2001, Ise-Shima, Mie, Japan> |
| author_corporate_role | aut |
| author_facet | International Conference on Rapid Thermal Processing for Future Semiconductor Devices < 2001, Ise-Shima, Mie, Japan> |
| author_sort | International Conference on Rapid Thermal Processing for Future Semiconductor Devices < 2001, Ise-Shima, Mie, Japan> |
| building | Verbundindex |
| bvnumber | BV043044073 |
| collection | ZDB-4-EBA |
| ctrlnum | (OCoLC)162131007 (DE-599)BVBBV043044073 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>06052nmm a2200589zc 4500</leader><controlfield tag="001">BV043044073</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">151123s2003 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0080540260</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">0-08-054026-0</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0444513396</subfield><subfield code="9">0-444-51339-6</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780080540269</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">978-0-08-054026-9</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780444513397</subfield><subfield code="9">978-0-444-51339-7</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)162131007</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV043044073</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1046</subfield><subfield code="a">DE-1047</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">22</subfield></datafield><datafield tag="110" ind1="2" ind2=" "><subfield code="a">International Conference on Rapid Thermal Processing for Future Semiconductor Devices < 2001, Ise-Shima, Mie, Japan></subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Rapid thermal processing for future semiconductor devices</subfield><subfield code="b">proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001</subfield><subfield code="c">edited by Hisashi Fukuda</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Amsterdam</subfield><subfield code="b">Elsevier</subfield><subfield code="c">2003</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (x, 150 pages)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Cover -- Copyright Page -- CONTENTS -- Preface -- RTP2001 Organization -- Chapter 1. Role of Rapid Thermal Processing in the Development of Disruptive and Non-disruptive Technologies for Semiconductor Manufacturing in the 21st Century -- Chapter 2. Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Implanted Impurities -- Chapter 3. Process and Technology Drivers for Single Wafer Processes in DRAM Manufacturing -- Chapter 4. Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals -- Chapter 5. Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication -- Chapter 6. High-Performance Poly-Si TFT and its Application to LCD -- Chapter 7. Rapid Low Temperature Photo Oxidation Processing for Advanced Poly-Si TFTs -- Chapter 8. Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing -- </subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a"> - Chapter 9. Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by Optical Shallow Defect Analyzer -- Chapter 10. Novel UV-assisted Rapid Thermal Annealing of Ferroelectric Materials -- Chapter 11. Rapid Thermal Annealing of (l-x)Ta2O5-xTiO2 Thin Films Formed by Metalorganic Decomposition -- Chapter 12. Hard Breakdown Characteristics in a 2.2-nm-thick SiO2 film -- Chapter 13. Rapid Thermal MOCVD Processing for InP-Based Devices -- Chapter 14. Sb Pile-up at the SiO2/Si Interface during Drive-in Process after Predeposition using SOG Source -- Chapter 15. Large Refractive Index C-S-Au Composite Film Formation by Plasma Processes -- Chapter 16. The LEVITOR 4000 system, Ultra-fast, Emissivity-independent, heating of substrates via heat conduction through thin gas layers -- Chapter 17. Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor -- </subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a"> - Chapter 18. The Short-period (Si14/Ge1)20 and (Si28/Ge2)10 superlattices as Buffer Layers for the Growth of Si0.75Ge0.25 Alloy Layers -- Chapter 19. Si Epitaxial Growth on the Atomic-Order Nitrided Si(l00) Surface in SiH4 Reaction -- Chapter 20. Heavy Doping Characteristics of Si Films Epitaxially Grown at 450oC by Alternately Supplied PH3 and SiH4 -- Last Page</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors / Heat treatment / Congresses. Rapid thermal processing / Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Solid State</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Semiconductors</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Rapid thermal processing</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors / Heat treatment</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Heat treatment</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Rapid thermal processing</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Rapid thermal processing</subfield><subfield code="0">(DE-588)4347011-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Rapid thermal processing</subfield><subfield code="0">(DE-588)4347011-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fukuda, Hisashi</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203153</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-028468610</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203153</subfield><subfield code="l">FAW01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203153</subfield><subfield code="l">FAW02</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FAW_PDA_EBA</subfield><subfield code="x">Aggregator</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift gnd-content |
| genre_facet | Konferenzschrift |
| id | DE-604.BV043044073 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:15:50Z |
| institution | BVB |
| isbn | 0080540260 0444513396 9780080540269 9780444513397 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028468610 |
| oclc_num | 162131007 |
| open_access_boolean | |
| owner | DE-1046 DE-1047 |
| owner_facet | DE-1046 DE-1047 |
| physical | 1 Online-Ressource (x, 150 pages) |
| psigel | ZDB-4-EBA ZDB-4-EBA FAW_PDA_EBA |
| publishDate | 2003 |
| publishDateSearch | 2003 |
| publishDateSort | 2003 |
| publisher | Elsevier |
| record_format | marc |
| spelling | International Conference on Rapid Thermal Processing for Future Semiconductor Devices < 2001, Ise-Shima, Mie, Japan> Verfasser aut Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 edited by Hisashi Fukuda Amsterdam Elsevier 2003 1 Online-Ressource (x, 150 pages) txt rdacontent c rdamedia cr rdacarrier This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies Includes bibliographical references Cover -- Copyright Page -- CONTENTS -- Preface -- RTP2001 Organization -- Chapter 1. Role of Rapid Thermal Processing in the Development of Disruptive and Non-disruptive Technologies for Semiconductor Manufacturing in the 21st Century -- Chapter 2. Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Implanted Impurities -- Chapter 3. Process and Technology Drivers for Single Wafer Processes in DRAM Manufacturing -- Chapter 4. Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals -- Chapter 5. Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication -- Chapter 6. High-Performance Poly-Si TFT and its Application to LCD -- Chapter 7. Rapid Low Temperature Photo Oxidation Processing for Advanced Poly-Si TFTs -- Chapter 8. Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing -- - Chapter 9. Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by Optical Shallow Defect Analyzer -- Chapter 10. Novel UV-assisted Rapid Thermal Annealing of Ferroelectric Materials -- Chapter 11. Rapid Thermal Annealing of (l-x)Ta2O5-xTiO2 Thin Films Formed by Metalorganic Decomposition -- Chapter 12. Hard Breakdown Characteristics in a 2.2-nm-thick SiO2 film -- Chapter 13. Rapid Thermal MOCVD Processing for InP-Based Devices -- Chapter 14. Sb Pile-up at the SiO2/Si Interface during Drive-in Process after Predeposition using SOG Source -- Chapter 15. Large Refractive Index C-S-Au Composite Film Formation by Plasma Processes -- Chapter 16. The LEVITOR 4000 system, Ultra-fast, Emissivity-independent, heating of substrates via heat conduction through thin gas layers -- Chapter 17. Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor -- - Chapter 18. The Short-period (Si14/Ge1)20 and (Si28/Ge2)10 superlattices as Buffer Layers for the Growth of Si0.75Ge0.25 Alloy Layers -- Chapter 19. Si Epitaxial Growth on the Atomic-Order Nitrided Si(l00) Surface in SiH4 Reaction -- Chapter 20. Heavy Doping Characteristics of Si Films Epitaxially Grown at 450oC by Alternately Supplied PH3 and SiH4 -- Last Page Semiconductors / Heat treatment / Congresses. Rapid thermal processing / Congresses TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Rapid thermal processing fast Semiconductors / Heat treatment fast Semiconductors Heat treatment Congresses Rapid thermal processing Congresses Halbleiter (DE-588)4022993-2 gnd rswk-swf Rapid thermal processing (DE-588)4347011-7 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Halbleiter (DE-588)4022993-2 s Rapid thermal processing (DE-588)4347011-7 s 1\p DE-604 Fukuda, Hisashi Sonstige oth http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203153 Aggregator Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 Semiconductors / Heat treatment / Congresses. Rapid thermal processing / Congresses TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Rapid thermal processing fast Semiconductors / Heat treatment fast Semiconductors Heat treatment Congresses Rapid thermal processing Congresses Halbleiter (DE-588)4022993-2 gnd Rapid thermal processing (DE-588)4347011-7 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4347011-7 (DE-588)1071861417 |
| title | Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 |
| title_auth | Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 |
| title_exact_search | Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 |
| title_full | Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 edited by Hisashi Fukuda |
| title_fullStr | Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 edited by Hisashi Fukuda |
| title_full_unstemmed | Rapid thermal processing for future semiconductor devices proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 edited by Hisashi Fukuda |
| title_short | Rapid thermal processing for future semiconductor devices |
| title_sort | rapid thermal processing for future semiconductor devices proceedings of the 2001 international conference on rapid thermal processing for future semiconductor devices rtp 2001 held at ise shima mie japan november 14 16 2001 |
| title_sub | proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 |
| topic | Semiconductors / Heat treatment / Congresses. Rapid thermal processing / Congresses TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Rapid thermal processing fast Semiconductors / Heat treatment fast Semiconductors Heat treatment Congresses Rapid thermal processing Congresses Halbleiter (DE-588)4022993-2 gnd Rapid thermal processing (DE-588)4347011-7 gnd |
| topic_facet | Semiconductors / Heat treatment / Congresses. Rapid thermal processing / Congresses TECHNOLOGY & ENGINEERING / Electronics / Solid State TECHNOLOGY & ENGINEERING / Electronics / Semiconductors Rapid thermal processing Semiconductors / Heat treatment Semiconductors Heat treatment Congresses Rapid thermal processing Congresses Halbleiter Konferenzschrift |
| url | http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=203153 |
| work_keys_str_mv | AT internationalconferenceonrapidthermalprocessingforfuturesemiconductordevices2001iseshimamiejapan rapidthermalprocessingforfuturesemiconductordevicesproceedingsofthe2001internationalconferenceonrapidthermalprocessingforfuturesemiconductordevicesrtp2001heldatiseshimamiejapannovember14162001 AT fukudahisashi rapidthermalprocessingforfuturesemiconductordevicesproceedingsofthe2001internationalconferenceonrapidthermalprocessingforfuturesemiconductordevicesrtp2001heldatiseshimamiejapannovember14162001 |