Molecular beam epitaxy: a short history
Gespeichert in:
Hauptverfasser: | , |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Oxford
Oxford University Press
2015
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Ausgabe: | First edition |
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis Klappentext |
Beschreibung: | Includes bibliographical references and index |
Beschreibung: | xii, 516 Seiten Illustrationen 26 cm |
ISBN: | 9780199695829 |
Internformat
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Datensatz im Suchindex
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adam_text | Contents
1 Setting the Scene 1
1.1 Importance of Single Crystal Growth 1
1.2 VPE (Vapour Phase Epitaxy) 9
1.3 LPE (Liquid Phase Epitaxy) 18
1.4 A Wide Range of Materials 26
2 MBE—The Early History 35
2.1 Origins 35
2.2 A History of Molecular Beams 37
2.3 Molecular Beams Applied to Nucleation Studies 47
2.4 Early Evaporation Methods 51
2.5 The Bell Labs Involvement 58
2.6 Superlattices and Low-Dimensional Structures 64
2.7 1975: Current Status 67
3 Machine Technology 75
3.1 Overview 75
3.2 Cell Design 78
3.3 Beam Calibration 87
3.4 The Substrate Holder 91
3.5 Load Locks 95
3.6 In Situ Characterisation 99
3.7 Commercial Machines 103
4 Fundamentals 112
4.1 Introduction 112
4.2 Mass Spectrometer Studies 115
4.3 RHEED (Reflection High Energy Electron Diffraction) Studies 128
4.4 Scanning Tunnelling Microscopy 146
4.5 Doping 153
4.6 Theoretical Aspects 158
4.7 MBE Operating Procedures 162
5 Modified Growth Techniques 170
5.1 Introduction 170
5.2 Modulated Beam Techniques 171
5.3 Use of Surfactants 184
5.4 Gas Source MBE 186
xii Contents
6 Low-Dimensional Structures 198
6.1 MBE Grows Up 198
6.2 Structural Superlattices 205
6.3 Doping Superlattices 214
6.4 Quantum Wells 221
6.5 Quantum Wires and Quantum Dots 242
6.6 The Two-Dimensional Electron Gas (2DEG) 257
7 Nitrides, Phosphides, Antimonides and Bismides 282
7.1 Introduction 282
7.2 Nitrides 282
7.3 Phosphides 296
7.4 Antimonides 302
7.5 Highly Mismatched Alloys 305
8 II-VI and IV-VI Compounds and Si/Ge 323
8.1 II-VI Compounds 323
8.2 IV-VI Compounds 348
8.3 Silicon/Germanium 359
9 Electronic Devices 390
9.1 Introduction 390
9.2 High Electron Mobility Transistors (HEMTs) 391
9.3 Heterojunction Bipolar Transistors (HBTs) 416
9.4 Hall Effect Devices 424
10 Optical Devices 433
10.1 GaAs Lasers 433
10.2 Quantum Well and Quantum Dot Lasers 441
10.3 Alternative Materials 453
10.4 Vertical Cavity and Quantum Cascade Lasers 460
10.5 Photodetectors 474
10.6 Solar Cells 486
Companies and Institutions Index 503
Materials Index 505
Name Index 508
General Index 513
Molecular Beam Epitaxy (MBE) is a well-recognised source of high-quality semiconductor films and, after fifty years of development, it is now widely used in the manufacture of semiconductor devices such as transistors and laser diodes used in practically every aspect of modern life.
This book provides a historical account of MBE’s development, together with a critical summary of its contribution to the understanding of crystal growth. Starting with MBE’s inception during the 1970s, the book traces its application to a wide range of semiconductor materials and structures, important in fundamental physics and materials science. Materials covered include Si, Ge, lll-Vs, ll-VIs and IV-VIs. It also describes the development of a range of electrical and optical semiconductor devices. Emphasis is placed on MBE’s ability to grow films with dimensions of a few atomic layers which led to the exciting low-dimensional structures initiative during the 1980s. The book is written in a relaxed style and emphasises the ‘human’ aspects of the subject as well as the technical.
John Orton is Emeritus Professor at the University of Nottingham.
Tom Foxon is Professor at the School of Physics and Astronomy, University of Nottingham.
This is a superbly written, comprehensive account of the development of molecular beam epitaxy and the remarkable impact this technique has had in producing complex nano-scale semiconductor devices.’
Gareth Parry, imperial College, London, UK
The reader, whether newcomer or experienced, can participate in the exciting historic journey of developing MBE to a practical crystal growth technique used worldwide in research and industry.’
Klaus H. Ploog. previously Director, Paul Drude Institute for Solid State Electronics
‘A fascinating historical narrative of the development of the MBE technique.
The book introduces us to the major developments and the pioneering research teams in the field, along a path which runs from the earliest experiments on vacuum deposition through to modern production epitaxy. The book is a valuable résumé of the rapid progress made during the last half century and yet also provides an important reference work for those entering this exciting field.’
Mark Hopkinson, University of Sheffield, UK
‘Essential reading for graduate students and researchers using the technique.’
Bruce A. Joyce FRS, Imperial College London, UK
|
any_adam_object | 1 |
author | Orton, John W. 1932- Foxon, Tom |
author_GND | (DE-588)108187365 (DE-588)108242935X |
author_facet | Orton, John W. 1932- Foxon, Tom |
author_role | aut aut |
author_sort | Orton, John W. 1932- |
author_variant | j w o jw jwo t f tf |
building | Verbundindex |
bvnumber | BV042765373 |
classification_rvk | UP 3150 UQ 2200 |
ctrlnum | (OCoLC)910947138 (DE-599)BVBBV042765373 |
dewey-full | 621.38152 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.38152 |
dewey-search | 621.38152 |
dewey-sort | 3621.38152 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
edition | First edition |
era | Geschichte gnd |
era_facet | Geschichte |
format | Book |
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isbn | 9780199695829 |
language | English |
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physical | xii, 516 Seiten Illustrationen 26 cm |
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publisher | Oxford University Press |
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spelling | Orton, John W. 1932- Verfasser (DE-588)108187365 aut Molecular beam epitaxy a short history John Orton and Tom Foxon First edition Oxford Oxford University Press 2015 xii, 516 Seiten Illustrationen 26 cm txt rdacontent n rdamedia nc rdacarrier Includes bibliographical references and index Geschichte gnd rswk-swf Halbleiterschicht (DE-588)4158812-5 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Halbleiterschicht (DE-588)4158812-5 s Molekularstrahlepitaxie (DE-588)4170399-6 s Geschichte z DE-604 Foxon, Tom Verfasser (DE-588)108242935X aut Digitalisierung UB Bayreuth - ADAM Catalogue Enrichment application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028195809&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis Digitalisierung UB Bayreuth - ADAM Catalogue Enrichment application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028195809&sequence=000002&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA Klappentext |
spellingShingle | Orton, John W. 1932- Foxon, Tom Molecular beam epitaxy a short history Halbleiterschicht (DE-588)4158812-5 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
subject_GND | (DE-588)4158812-5 (DE-588)4170399-6 |
title | Molecular beam epitaxy a short history |
title_auth | Molecular beam epitaxy a short history |
title_exact_search | Molecular beam epitaxy a short history |
title_full | Molecular beam epitaxy a short history John Orton and Tom Foxon |
title_fullStr | Molecular beam epitaxy a short history John Orton and Tom Foxon |
title_full_unstemmed | Molecular beam epitaxy a short history John Orton and Tom Foxon |
title_short | Molecular beam epitaxy |
title_sort | molecular beam epitaxy a short history |
title_sub | a short history |
topic | Halbleiterschicht (DE-588)4158812-5 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
topic_facet | Halbleiterschicht Molekularstrahlepitaxie |
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