Aluminum-based PVD rear-side metallization for front-junction nPERT silicon solar cells:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Ilmenau
Univ.-Verl.
2015
|
| Schriftenreihe: | Werkstofftechnik aktuell
11 |
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | 204 S. Ill., graph. Darst. 21 cm |
| ISBN: | 9783863601119 |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV042692692 | ||
| 003 | DE-604 | ||
| 007 | t | ||
| 008 | 150715s2015 gw ad|| m||| 00||| eng d | ||
| 015 | |a 15,N14 |2 dnb | ||
| 015 | |a 15,A18 |2 dnb | ||
| 015 | |a 15,H05 |2 dnb | ||
| 016 | 7 | |a 1068986026 |2 DE-101 | |
| 020 | |a 9783863601119 |c kart. : EUR 15.70 (DE), EUR 16.20 (AT), sfr 22.90 (freier Pr.) |9 978-3-86360-111-9 | ||
| 024 | 3 | |a 9783863601119 | |
| 035 | |a (OCoLC)908252706 | ||
| 035 | |a (DE-599)DNB1068986026 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c XA-DE-TH | ||
| 049 | |a DE-573 | ||
| 082 | 0 | |a 681.76 |2 22/ger | |
| 084 | |a ZN 4800 |0 (DE-625)157408: |2 rvk | ||
| 084 | |a 670 |2 sdnb | ||
| 100 | 1 | |a Katkhouda, Kamal |d 1981- |e Verfasser |0 (DE-588)1069636592 |4 aut | |
| 245 | 1 | 0 | |a Aluminum-based PVD rear-side metallization for front-junction nPERT silicon solar cells |c Kamal Katkhouda. [Technische Universität Ilmenau] |
| 264 | 1 | |a Ilmenau |b Univ.-Verl. |c 2015 | |
| 300 | |a 204 S. |b Ill., graph. Darst. |c 21 cm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Werkstofftechnik aktuell |v 11 | |
| 502 | |a Zugl.: Ilmenau, Techn. Univ., Diss., 2014 | ||
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Rückseite |0 (DE-588)4468345-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a n-Halbleiter |0 (DE-588)4171953-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Solarzelle |0 (DE-588)4181740-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Metallisieren |0 (DE-588)4169599-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Aluminium |0 (DE-588)4001573-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a PVD-Verfahren |0 (DE-588)4115673-0 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Solarzelle |0 (DE-588)4181740-0 |D s |
| 689 | 0 | 1 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 2 | |a n-Halbleiter |0 (DE-588)4171953-0 |D s |
| 689 | 0 | 3 | |a Rückseite |0 (DE-588)4468345-5 |D s |
| 689 | 0 | 4 | |a Metallisieren |0 (DE-588)4169599-9 |D s |
| 689 | 0 | 5 | |a Aluminium |0 (DE-588)4001573-7 |D s |
| 689 | 0 | 6 | |a PVD-Verfahren |0 (DE-588)4115673-0 |D s |
| 689 | 0 | |5 DE-604 | |
| 856 | 4 | 2 | |m X:MVB |q text/html |u http://deposit.dnb.de/cgi-bin/dokserv?id=5191351&prov=M&dok_var=1&dok_ext=htm |3 Inhaltstext |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028124321&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-028124321 | |
Datensatz im Suchindex
| _version_ | 1809771808391430144 |
|---|---|
| adam_text |
TABLE OF CONTENTS
1 INTRODUCTION 11
1.1 THESIS MOTIVATION AND OBJECTIVES 11
1.2 THESIS OUTLINE 13
2 FUNDAMENTALS 17
2.1 BASICS OF SILICON SOLAR CELLS 17
2.1.1 DEVICE STRUCTURE AND WORKING PRINCIPLE OF FRONT-JUNCTION
NPERT SILICON SOLAR CELLS 17
2.1.2 CURRENT-VOLTAGE CHARACTERISTIC OF SILICON SOLAR CELLS 19
2.1.3 CARRIER RECOMBINATION IN CRYSTALLINE SILICON 21
2.1.4 IMPACT OF ELECTRICAL AND OPTICAL LOSSES ON CURRENT-VOLTAGE
CHARACTERISTIC 24
2.2 REAR-SIDE METALLIZATION OF SILICON SOLAR CELLS 27
2.2.1 REVIEW AND STATE OF THE ART 27
2.2.2 NOVEL CELL DESIGN FEATURING SCREEN-PRINTED FRONT SIDE AND
PHYSICAL VAPOR DEPOSITED REAR-SIDE METALLIZATION 29
2.2.3 PHYSICAL VAPOR DEPOSITION OF METAL LAYERS 31
2.3 REAR-SIDE METALLIZATION RELATED LOSSES 34
2.3.1 OHMIC LOSSES DUE TO LATERAL RESISTANCE OF REAR-SIDE
METALLIZATION 34
2.3.2 OHMIC LOSSES DUE TO CONTACT RESISTANCE OF REAR-SIDE
METALLIZATION 40
HTTP://D-NB.INFO/1068986026
6
TABLE OF CONTENTS
2.3.3 OPTICAL LOSSES DUE TO PARASITIC ABSORPTION IN REAR-SIDE
METALLIZATION 42
2.3.4 REAR-SIDE METALLIZATION RELATED RECOMBINATION LOSSES 45
2.4 REQUIREMENTS OF REAR-SIDE METALLIZATION FOR DOUBLE-SIDE CONTACTED
INDUSTRIAL SILICON SOLAR CELLS 46
2.5 WHY ALUMINUM-BASED PVD REAR-SIDE METALLIZATION FOR //-TYPE
PERT SOLAR CELLS? 47
3 SPUTTERING DEPOSITION PROCESSES OF THE INVESTIGATED METAL LAYERS 51
3.1 OERLIKON SOLARIS 6 MULTI-LAYER SPUTTERING DEPOSITION SYSTEM. 51
3.2 SPUTTERING-DEPOSITION PROCESSES OF THE METAL LAYERS 53
3.2.1 PROCESS PARAMETERS AND DEPOSITION RATE OF ALUMINUM SPUTTERING
DEPOSITION 54
3.2.2 SPUTTERING-DEPOSITION PROCESSES OF THE AL-SI (1 AT% SI) LAYERS.
55
3.2.3 SPUTTERING DEPOSITION PROCESSES OF THE SILVER LAYERS 57
3.2.4 SPUTTERING DEPOSITION PROCESSES OF THE TITANIUM LAYERS 58
3.2.5 MAXIMUM SUBSTRATE TEMPERATURE DURING ALUMINUM SPUTTERING
DEPOSITION 59
3.3 SUMMARY AND CONCLUSION 62
4 CONTACT FORMATION PROCESS OF ALUMINUM-BASED METALLIZATION 63
4.1 THEORETICAL BACKGROUND ON THE CONTACT-FORMATION PROCESS OF
AL/SI-CONTACTS 63
4.2 CHARACTERIZATION OF CONTACT FORMATION PROCESS 69
4.3 TI/AL STACK AGAINST ALUMINUM SPIKING 70
4.3.1 THEORETICAL BACKGROUND OF TITANIUM AS A SPIKING BARRIER 70
4.3.2 SEM STRUCTURAL INVESTIGATIONS OF TI/AL-STACK 73
TABLE OF CONTENTS
7
4.4 NOVEL AI-SI/AI-STACK AGAINST AL-SPIKING 75
4.4.1 PROCESS SIMULATION OF AL/AL-SI/SI SYSTEM 76
4.4.2 SEM STRUCTURAL INVESTIGATIONS OF AL-SI/AL STACK 79
4.5 SUMMARY AND CONCLUSION 81
5 SPECIFIC CONTACT RESISTANCE EVALUATION 83
5.1 DETERMINATION OF SPECIFIC CONTACT RESISTANCE OF POINT CONTACTS ON
HIGHLY DOPED SILICON 84
5.1.1 SAMPLE STRUCTURE AND EXPERIMENTAL SETUP 84
5.1.2 ANALYTICAL MODEL TO EXTRACT THE CONTACT RESISTANCE OF THE POINT
CONTACT FROM THE MEASURED DATA 88
5.1.3 CIRCULAR TRANSMISSION LINE MODEL TO DETERMINE REAR SPECIFIC
CONTACT RESISTANCE P
CT
*AR 92
5.1.4 VERIFICATION OF THE ANALYTICAL APPROXIMATION WITH 3D NUMERICAL
DEVICE SIMULATIONS 95
5.1.5 ERROR CONTRIBUTIONS OF WAFER THICKNESS AND RESISTIVITY, BSF SHEET
RESISTANCE AND CONTACT RADIUS 97
5.2 SPECIFIC CONTACT RESISTANCE EXPERIMENTAL RESULTS : 99
5.2.1 SPECIFIC CONTACT-RESISTANCE RESULTS ON LOWLY DOPED
+
-BSF 99
5.2.2 SPECIFIC CONTACT-RESISTANCE RESULTS ON HIGHLY DOPED
+
-BSF .101
5.2.3 COMPARISON OF THE EXPERIMENTALLY OBTAINED PT,
MR
DATA WITH
PREVIOUSLY PUBLISHED ONES 103
5.2.4 SUMMARY AND CONCLUSION 103
6 DETAILED OPTICAL STUDY ON REAR-SIDE REFLECTORS FOR NPERT SOLAR CELLS
107
6.1 THEORETICAL BACKGROUND 107
6.1.1 OPTICAL PROPERTIES OF DIELECTRIC MATERIALS AND METALS 107
8 TABLE OF CONTENTS
6.1.2 LIGHT PATHS FOR PERT SOLAR CELL WITH REGULAR UPRIGHT PYRAMIDS
AND FRUSTRATED TOTAL REFLECTION 114
6.1.3 REFLECTANCE OF SILICON/PASSIVATION/METALLIZATION-SYSTEM
CALCULATED WITH THE MATRIX METHOD 119
6.2 NUMERICAL 3D-DEVICE-SIMULATIONS AND EXPERIMENTS ON REFLECTION
SAMPLES 127
6.2.1 ONE-LAYER AL-METALLIZATION WITH VARIOUS PASSIVATION
CONFIGURATIONS 129
6.2.2 MULTI-LAYER AL-BASED METALLIZATION WITH FIRST AL-SI LAYER AS A
SPIKING BARRIER 132
6.2.3 MULTI-LAYER AL-BASED METALLIZATION WITH FIRST TI LAYER AS A LOW
RESISTANCE CONTACTING METAL 133
6.2.4 ONE-LAYER AG-METALLIZATION ON VARIOUS PASSIVATION LAYERS 140
6.2.5 MULTI-LAYER AL-BASED METALLIZATION WITH FIRST THIN AG LAYER AS AN
IR REFLECTOR 142
6.2.6 COMPARISON OF THE OPTIMIZED REAR-SIDE REFLECTORS 146
6.3 SUMMARY AND CONCLUSION 147
7 PLASMA-INDUCED DAMAGE OF SPUTTERING DEPOSITION OF METAL LAYERS 149
7.1 EXPERIMENTAL APPROACH 150
7.1.1 MICROWAVE PHOTOCONDUCTANCE DECAY (MWPCD) 151
7.1.2 CORONA OXIDE CHARACTERIZATION OF SEMICONDUCTOR (COCOS) 153
7.2 EXPERIMENTAL RESULTS 155
7.2.1 IMPACT OF ALUMINUM SPUTTERING ON THE ELECTRICAL PROPERTIES OF
SI/SI02 INTERFACE 155
7.2.2 IMPACT OF A1 SPUTTERING ON THE ELECTRICAL PROPERTIES OF SI/AHOJ
INTERFACE 157
TABLE OF CONTENTS
9
7.2.3 IMPACT OF A1 SPUTTERING ON THE ELECTRICAL PROPERTIES OF SI/SIN
X
INTERFACE 158
7.3 SUMMARY AND CONCLUSION 160
8 CELL RESULTS OF FRONT-JUNCTION NPERT SOLAR CELLS 161
8.1 ONE-LAYER ALUMINUM REAR-SIDE METALLIZATION (BATCH-1 TO
BATCH-4) 162
8.1.1 BATCH-1: INFLUENCE OF REAR-SIDE CAPPING SIC
2
ON CURRENT
GENERATION 162
8.1.2 BATCH-2: INFLUENCE OF REAR DOPING PROFILE AND THERMAL STRESS ON
CELL PERFORMANCE 163
8.1.3 BATCH-3: INFLUENCE OF REAR CONTACT SPACING ON CURRENT-VOLTAGE
CHARACTERISTIC 168
8.1.4 BATCH-4: INFLUENCE OF ALUMINUM LAYER THICKNESS ON SERIES OHMIC
LOSSES 171
8.2 MULTI-LAVER ALUMINUM-BASED REAR-SIDE METALLIZATION (BATCH 5) 175
8.3 SUMMARY AND CONCLUSION 177
9 THESIS SUMMARY AND OUTLOOK 179
10 DEUTSCHE ZUSAMMENFASSUNG (GERMAN SUMMARY) 185
REFERENCES 191
OWN PUBLICATIONS 201
ACKNOWLEDGMENTS 203 |
| any_adam_object | 1 |
| author | Katkhouda, Kamal 1981- |
| author_GND | (DE-588)1069636592 |
| author_facet | Katkhouda, Kamal 1981- |
| author_role | aut |
| author_sort | Katkhouda, Kamal 1981- |
| author_variant | k k kk |
| building | Verbundindex |
| bvnumber | BV042692692 |
| classification_rvk | ZN 4800 |
| ctrlnum | (OCoLC)908252706 (DE-599)DNB1068986026 |
| dewey-full | 681.76 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 681 - Precision instruments and other devices |
| dewey-raw | 681.76 |
| dewey-search | 681.76 |
| dewey-sort | 3681.76 |
| dewey-tens | 680 - Manufacture of products for specific uses |
| discipline | Handwerk und Gewerbe / Verschiedene Technologien Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000 cb4500</leader><controlfield tag="001">BV042692692</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">150715s2015 gw ad|| m||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">15,N14</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">15,A18</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">15,H05</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">1068986026</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783863601119</subfield><subfield code="c">kart. : EUR 15.70 (DE), EUR 16.20 (AT), sfr 22.90 (freier Pr.)</subfield><subfield code="9">978-3-86360-111-9</subfield></datafield><datafield tag="024" ind1="3" ind2=" "><subfield code="a">9783863601119</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)908252706</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB1068986026</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-TH</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-573</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">681.76</subfield><subfield code="2">22/ger</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4800</subfield><subfield code="0">(DE-625)157408:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">670</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Katkhouda, Kamal</subfield><subfield code="d">1981-</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)1069636592</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Aluminum-based PVD rear-side metallization for front-junction nPERT silicon solar cells</subfield><subfield code="c">Kamal Katkhouda. [Technische Universität Ilmenau]</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Ilmenau</subfield><subfield code="b">Univ.-Verl.</subfield><subfield code="c">2015</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">204 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield><subfield code="c">21 cm</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Werkstofftechnik aktuell</subfield><subfield code="v">11</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Zugl.: Ilmenau, Techn. Univ., Diss., 2014</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Rückseite</subfield><subfield code="0">(DE-588)4468345-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">n-Halbleiter</subfield><subfield code="0">(DE-588)4171953-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Solarzelle</subfield><subfield code="0">(DE-588)4181740-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Metallisieren</subfield><subfield code="0">(DE-588)4169599-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Aluminium</subfield><subfield code="0">(DE-588)4001573-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">PVD-Verfahren</subfield><subfield code="0">(DE-588)4115673-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Solarzelle</subfield><subfield code="0">(DE-588)4181740-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">n-Halbleiter</subfield><subfield code="0">(DE-588)4171953-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Rückseite</subfield><subfield code="0">(DE-588)4468345-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Metallisieren</subfield><subfield code="0">(DE-588)4169599-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="5"><subfield code="a">Aluminium</subfield><subfield code="0">(DE-588)4001573-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="6"><subfield code="a">PVD-Verfahren</subfield><subfield code="0">(DE-588)4115673-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">X:MVB</subfield><subfield code="q">text/html</subfield><subfield code="u">http://deposit.dnb.de/cgi-bin/dokserv?id=5191351&prov=M&dok_var=1&dok_ext=htm</subfield><subfield code="3">Inhaltstext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028124321&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-028124321</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV042692692 |
| illustrated | Illustrated |
| indexdate | 2024-09-10T01:48:12Z |
| institution | BVB |
| isbn | 9783863601119 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028124321 |
| oclc_num | 908252706 |
| open_access_boolean | |
| owner | DE-573 |
| owner_facet | DE-573 |
| physical | 204 S. Ill., graph. Darst. 21 cm |
| publishDate | 2015 |
| publishDateSearch | 2015 |
| publishDateSort | 2015 |
| publisher | Univ.-Verl. |
| record_format | marc |
| series2 | Werkstofftechnik aktuell |
| spelling | Katkhouda, Kamal 1981- Verfasser (DE-588)1069636592 aut Aluminum-based PVD rear-side metallization for front-junction nPERT silicon solar cells Kamal Katkhouda. [Technische Universität Ilmenau] Ilmenau Univ.-Verl. 2015 204 S. Ill., graph. Darst. 21 cm txt rdacontent n rdamedia nc rdacarrier Werkstofftechnik aktuell 11 Zugl.: Ilmenau, Techn. Univ., Diss., 2014 Silicium (DE-588)4077445-4 gnd rswk-swf Rückseite (DE-588)4468345-5 gnd rswk-swf n-Halbleiter (DE-588)4171953-0 gnd rswk-swf Solarzelle (DE-588)4181740-0 gnd rswk-swf Metallisieren (DE-588)4169599-9 gnd rswk-swf Aluminium (DE-588)4001573-7 gnd rswk-swf PVD-Verfahren (DE-588)4115673-0 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Solarzelle (DE-588)4181740-0 s Silicium (DE-588)4077445-4 s n-Halbleiter (DE-588)4171953-0 s Rückseite (DE-588)4468345-5 s Metallisieren (DE-588)4169599-9 s Aluminium (DE-588)4001573-7 s PVD-Verfahren (DE-588)4115673-0 s DE-604 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=5191351&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028124321&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Katkhouda, Kamal 1981- Aluminum-based PVD rear-side metallization for front-junction nPERT silicon solar cells Silicium (DE-588)4077445-4 gnd Rückseite (DE-588)4468345-5 gnd n-Halbleiter (DE-588)4171953-0 gnd Solarzelle (DE-588)4181740-0 gnd Metallisieren (DE-588)4169599-9 gnd Aluminium (DE-588)4001573-7 gnd PVD-Verfahren (DE-588)4115673-0 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4468345-5 (DE-588)4171953-0 (DE-588)4181740-0 (DE-588)4169599-9 (DE-588)4001573-7 (DE-588)4115673-0 (DE-588)4113937-9 |
| title | Aluminum-based PVD rear-side metallization for front-junction nPERT silicon solar cells |
| title_auth | Aluminum-based PVD rear-side metallization for front-junction nPERT silicon solar cells |
| title_exact_search | Aluminum-based PVD rear-side metallization for front-junction nPERT silicon solar cells |
| title_full | Aluminum-based PVD rear-side metallization for front-junction nPERT silicon solar cells Kamal Katkhouda. [Technische Universität Ilmenau] |
| title_fullStr | Aluminum-based PVD rear-side metallization for front-junction nPERT silicon solar cells Kamal Katkhouda. [Technische Universität Ilmenau] |
| title_full_unstemmed | Aluminum-based PVD rear-side metallization for front-junction nPERT silicon solar cells Kamal Katkhouda. [Technische Universität Ilmenau] |
| title_short | Aluminum-based PVD rear-side metallization for front-junction nPERT silicon solar cells |
| title_sort | aluminum based pvd rear side metallization for front junction npert silicon solar cells |
| topic | Silicium (DE-588)4077445-4 gnd Rückseite (DE-588)4468345-5 gnd n-Halbleiter (DE-588)4171953-0 gnd Solarzelle (DE-588)4181740-0 gnd Metallisieren (DE-588)4169599-9 gnd Aluminium (DE-588)4001573-7 gnd PVD-Verfahren (DE-588)4115673-0 gnd |
| topic_facet | Silicium Rückseite n-Halbleiter Solarzelle Metallisieren Aluminium PVD-Verfahren Hochschulschrift |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=5191351&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028124321&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT katkhoudakamal aluminumbasedpvdrearsidemetallizationforfrontjunctionnpertsiliconsolarcells |