Photonics and electronics with germanium:
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Weinheim
Wiley-VCH
2015
|
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | XV, 316 S. Ill., graph. Darst. |
| ISBN: | 9783527328215 9783527650200 |
Internformat
MARC
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| 245 | 1 | 0 | |a Photonics and electronics with germanium |c ed. by Kazumi Wada ... |
| 264 | 1 | |a Weinheim |b Wiley-VCH |c 2015 | |
| 300 | |a XV, 316 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 650 | 0 | 7 | |a Photonik |0 (DE-588)4243979-6 |2 gnd |9 rswk-swf |
| 653 | |a Elektronik | ||
| 653 | |a Elektronische Materialien | ||
| 653 | |a Germanium | ||
| 653 | |a Photonik | ||
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Datensatz im Suchindex
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CONTENTS
PREFACE XI
LIST OF CONTRIBUTORS XIII
1 DEFECTS IN GERMANIUM 1
JUSTIN R. WEBER, ANDERSON
JANOTTI,
AND CHRIS
G. VAN DE WALLE
1.1 INTRODUCTION 1
1.2 METHODS FOR STUDYING DEFECTS AND IMPURITIES 2
1.2.1 EXPERIMENTAL TECHNIQUES 2
1.2.2 FIRST-PRINCIPLES CALCULATIONS 3
1.3 IMPURITIES 5
1.3.1 SHALLOW DOPANTS 5
1.3.2 HYDROGEN
8
1.4 INTRINSIC DEFECTS 8
1.4.1 VACANCIES
8
1.4.1.1 ELECTRONIC STRUCTURE
8
1.4.1.2 FORMATION ENERGY 9
1.4.1.3 DEFECT LEVELS 10
1.4.1.4 COMPARISON WITH SILICON 13
1.4.1.5 DIFFUSION 13
1.4.2 SELF-INTERSTITIALS 14
1.4.3 DANGLING BONDS 16
1.4.3.1 ELECTRONIC LEVELS 16
1.4.4 IMPACT ON DEVICES 18
1.5 SUMMARY 19
REFERENCES 19
2 HYDROGEN IN GE 25
JORG WEBER
2.1 INTRODUCTION 25
2.2 PROPERTIES OF HYDROGEN IN GE 26
2.2.1 INCORPORATION OF HYDROGEN 26
2.2.2 ISOLATED HYDROGEN 27
2.2.3 HYDROGEN DIMERS 30
HTTP://D-NB.INFO/1065330693
VI CONTENTS
2.2.3.1 INTERSTITIAL H
2
30
2.2.3.2 THE H
2
* DEFECT 31
2.2.3.3 H
2
MOLECULES IN HYDROGEN-INDUCED PLATELETS 32
2.2.3.4 COMPLEXES OF HYDROGEN WITH OTHER DEFECTS 34
2.3 HYDROGEN PASSIVATION OF SHALLOW DONORS AND ACCEPTORS IN GE 36
2.3.1 DONOR PASSIVATION 37
2.3.2 HYDROGEN IN P-TYPE GE 40
2.3.3 SCHOTTKY CONTACTS ON P-TYPE GE 43
2.4 SUMMARY 45
ACKNOWLEDGMENTS 45
REFERENCES 45
3 EPITAXY OF GE LAYERS ON BLANKET AND PATTERNED SI(001) FOR
NANOELECTRONICS AND OPTOELECTRONICS 49
JEAN-MICHEL HARTMANN
3.1 GENERAL INTRODUCTION 49
3.2 EPITAXIAL GROWTH OF GE THICK LAYERS ON SI(OOL) 50
3.2.1 GROWTH PROTOCOL AND KINETICS 50
3.2.2 SURFACE MORPHOLOGY 51
3.2.3 STRAIN STATE 52
3.2.4 DEFECTS DENSITY AND DISTRIBUTION IN THE GE LAYERS 54
3.3 GE SURFACE PASSIVATION WITH SI 55
3.3.1 PASSIVATION PROTOCOL 55
3.3.2 SURFACE AND FILM MORPHOLOGY 57
3.4 SEG OF GE IN CAVITIES AT THE END OF OPTICAL WAVEGUIDES 59
3.5 FABRICATION, STRUCTURAL, AND ELECTRICAL PROPERTIES OF COMPRESSIVELY
STRAINED GE-ON-INSULATOR SUBSTRATES 61
3.5.1 THE C-GE ON SI
015
GE
0 G5
PROCESS FLOW 62
3.5.2 STRUCTURAL PROPERTIES OF THE C-GE ON SI
015
GE
0 85
STACKS AS A FUNCTION
OF THE GE LAYER THICKNESS 64
3.5.2.1 SURFACE MORPHOLOGY 64
3.5.2.2 MACROSCOPIC STRAIN STATE 65
3.5.2.3 DEFECT DENSITY
66
3.5.3 PROPERTIES OF THE C-GEOI SUBSTRATES
68
3.5.3.1 STRUCTURAL PROPERTIES
68
3.5.3.2 ELECTRICAL PROPERTIES 69
3.5.3.3 BENCHMARK 71
3.6 CONCLUSION AND PERSPECTIVES 72
REFERENCES 73
4 HEAVY DOPING IN SI
1-X
GE
X
EPITAXIAL GROWTH BY CHEMICAL VAPOR
DEPOSITION 77
JUNICHI MUROTA
4.1 INTRODUCTION 77
4.2 IN SITU DOPING OF B, P, AND C IN SI^ GE
X
EPITAXIAL GROWTH 78
CONTENTS | VII
4.2.1 IN SITU DOPING CHARACTERISTICS IN SI^GE^ EPITAXIAL GROWTH 78
4.2.2 RELATIONSHIP BETWEEN CARRIER AND IMPURITY (B OR P) CONCENTRATIONS
IN SI^^GE^CY EPITAXIAL FILM 82
4.3 ATOMIC-LAYER DOPING IN SI^GE, EPITAXIAL GROWTH 84
4.3.1 BORON ATOMIC-LAYER DOPING IN SIJ^GE, EPITAXIAL GROWTH 85
4.3.1.1 SURFACE REACTION OF B
2
H
6
ON SI
1
_
JC
GE
X
(100) 85
4.3.1.2 SIJ.^GE^ EPITAXIAL GROWTH OVER B ATOMIC LAYER ALREADY FORMED
ON THE (100) SURFACE 87
4.3.2 PHOSPHORUS ATOMIC-LAYER DOPING IN SI^GE^ EPITAXIAL GROWTH 88
4.3.2.1 SURFACE REACTION OF PH
3
ON SI^GE^LOO) 88
4.3.2.2 SIJ.^GE^ EPITAXIAL GROWTH OVER P ATOMIC LAYER ALREADY-FORMED
ON THE (100) SURFACE 89
4.3.3 CARBON ATOMIC-LAYER DOPING IN SI/SI
1
_
JC
GE
J
/SI(100) STRUCTURE 94
4.3.3.1 SURFACE REACTION OF SIH
3
CH
3
ON SI
1
_
J
GE
JC
(100) 94
4.3.3.2 SI^GE^ EPITAXIAL GROWTH OVER C ATOMIC LAYER ALREADY FORMED
ON THE (100) SURFACE 94
4.4 CONCLUSION AND FUTURE TRENDS 96
ACKNOWLEDGMENTS 97
REFERENCES 97
5 FEOL INTEGRATION OF SILICON- AND GERMANIUM-BASED PHOTONICS IN
BULK-SILICON, HIGH-PERFORMANCE SIGE:
C-BICMOS PROCESSES 101
LARS ZIMMERMANN,
DIETER KNOLL,
AND BERND TILLACK
5.1 INTRODUCTION 101
5.2 LOCAL SOI TECHNOLOGY 103
5.3 PASSIVE SILICON WAVEGUIDE TECHNOLOGY 105
5.4 MODULATOR TECHNOLOGY 108
5.5 PHOTONICS INTEGRATION IN BICMOS FLOW 111
5.6 GERMANIUM PHOTO DETECTOR - PROCESS INTEGRATION CHALLENGES 114
5.7 EXAMPLE CIRCUIT - 10 GBIT S
_1
MODULATOR WITH DRIVER 118
5.8 OUTLOOK 120
ACKNOWLEDGMENTS 120
REFERENCES 121
GE CONDENSATION AND ITS DEVICE APPLICATION 123
SHINICHI TAKAGI
PRINCIPLE OF GE CONDENSATION AND FABRICATION PROCESS 123
BASIC CONCEPT OF GE CONDENSATION PROCESS 123
CRITICAL PROCESS PARAMETERS 125
GOI FILM CHARACTERIZATION 127
THICKNESS CONTROL 127
RESIDUAL IMPURITY 129
STRAIN BEHAVIOR 129
DEFECTS AND DISLOCATIONS 131
ELECTRICAL PROPERTIES 132
6
6.1
6.1.1
6.1.2
6.2
6.2.1
6.2.2
6.2.3
6.2.4
6.2.5
VIII | CONTENTS
6.3 DEVICE APPLICATION 132
6.3.1 PLANAR GOI MOSFET 133
6.3.2 MOSFETS USING LOCAL GE CONDENSATION 135
6.3.2.1 PLANAR MOSFETS 135
6.3.2.2 MULTI-GATE AND NANOWIRE MOSFETS 138
6.3.3 STRESSOR 139
6.3.4 PHOTONIC DEVICES 139
6.4 SUMMARY 140
REFERENCES 140
7 WAVEGUIDE DESIGN, FABRICATION, AND ACTIVE DEVICE INTEGRATION 147
KOJI YAMADA
7.1 INTRODUCTION 147
7.2 DESIGN OF SILICON PHOTONIC WIRE WAVEGUIDING SYSTEM 148
7.2.1 GUIDED MODES OF SI PHOTONIC WIRE WAVEGUIDE 148
7.2.2 EXTERNAL COUPLING OF SILICON PHOTONIC WIRE WAVEGUIDE 152
7.2.3 COUPLING TO GE PHOTONIC DEVICES 153
7.3 FABRICATION 155
7.3.1 SI WAVEGUIDE CORE 155
7.3.2 DYNAMIC AND ACTIVE LAYERS 155
7.3.3 SSCS AND OVERCLADDING 156
7.4 PROPAGATION PERFORMANCE OF WAVEGUIDES 158
7.5 INTEGRATION OF SI/SILICA AND GE PHOTONIC DEVICES 160
7.5.1 INTEGRATION OF SI-BASED MODULATION DEVICE AND GE-BASED
PHOTODETECTORS 160
7.5.2 INTEGRATION OF SI/SILICA-BASED WAVELENGTH FILTER AND GE-BASED
PHOTODETECTORS 160
7.6 SUMMARY 161
REFERENCES 162
8 DETECTORS 165
SUBAL SAHNI
AND GIANLORENZO
MASINI
8.1 INTRODUCTION 165
8.2 HISTORICAL BACKGROUND 165
8.3 FIBER-OPTICS REVOLUTION 167
8.4 AVALANCHE DEVICES 167
8.5 SI-PHOTONICS 168
8.6 HIGH-PERFORMANCE GE DETECTORS
8.7 PROCESS OPTIONS AND CHALLENGES
8.7.1 PHYSICAL VAPOR DEPOSITION (PVD)
8.7.2 CHEMICAL VAPOR DEPOSITION 172
8.7.3 RAPID MELT GROWTH 174
8.7.4 OTHER TECHNIQUES 175
8.8 DEVICE ARCHITECTURES 177
8.9 GE ON SI DETECTORS IN HIGHLY INTEGRATED SYSTEMS 180
169
170
170
CONTENTS IX
8.10 RELIABILITY 182
8.11 CONCLUSIONS 183
REFERENCES 183
9 GE AND GESI ELECTROABSORPTION MODULATORS 191
JIFENG LIU
9.1 INTRODUCTION 191
9.2 EAE IN GE AND GESI: THEORETICAL AND EXPERIMENTAL 192
9.2.1 FRANZ-KELDYSH EFFECT 192
9.2.2 QUANTUM-CONFINED STARK EFFECT 197
9.2.3 COMPARISON OF GE FKE WITH QCSE MODULATORS 202
9.3 WAVEGUIDE COUPLING 203
9.4 CURRENT PROGRESS IN GE AND GESI EAMS 207
9.5 CONCLUSIONS 213
REFERENCES 214
10 STRAINED GE FOR SI-BASED INTEGRATED PHOTONICS 219
KAZUMI
WADA, KOHEI YOSHIMOTO,
YU HORIE,
JINGNAN
CAI, PENG HUEI LIM,
HIROSHI FUKUDA,
RYOTA SUZUKI,
AND YASUHIKO
ISHIKAWA
10.1 INTRODUCTION 219
10.2 BANDGAP AND STRAIN: THEORY 220
10.3 BANDGAP AND STRAIN: EXPERIMENT 224
10.3.1 SI 224
10.3.2 GE ON SI 226
10.3.3 GAAS ON GE ON SI 228
10.4 STRAIN-ENGINEERED TUNABILITY OF LASERS 230
10.5 CONCLUSIONS 231
ACKNOWLEDGMENT 232
REFERENCES 232
11 GE QUANTUM DOTS-BASED LIGHT EMITTING DEVICES 233
XUEJUN XU,
TAKUYA MARUIZUMI,
AND YASUHIRO
SHIRAKI
11.1 INTRODUCTION 233
11.2 FORMATION OF GE DOTS ON SI SUBSTRATES AND THEIR LUMINESCENT
PROPERTIES 234
11.3 ENHANCED LIGHT EMISSION FROM GE QDS EMBEDDED IN OPTICAL
CAVITIES 239
11.4 OPTICALLY EXCITED LIGHT EMISSION FROM GE QDS 240
11.4.1 PHOTONIC CRYSTAL CAVITY 240
11.4.1.1 GENERAL DEVICE DESCRIPTION 240
11.4.1.2 PL FROM PHC MICROCAVITIES 241
11.4.1.3 PL FROM L3-TYPE PHC NANOCAVITIES 242
11.4.1.4 PL FROM DOUBLE-HETEROSTRUCTURE PHC NANOCAVITIES 247
11.4.2 MICRODISK/RING 248
11.4.2.1 GENERAL DEVICE DESCRIPTION 248
X CONTENTS
11.4.2.2 PL FROM MICRODISKS AND RINGS 249
11.5 ELECTRICALLY EXCITED LIGHT EMISSION FROM GE ODS 251
11.5.1 PHOTONIC CRYSTAL CAVITY 251
11.5.1.1 VERTICAL PIN STRUCTURE 252
11.5.1.2 LATERAL PIN STRUCTURE 255
11.5.1.3 OPTIMIZED LATERAL PIN STRUCTURE 258
11.5.2 MICRODISK 261
11.6 CONCLUSION 263
REFERENCES 264
12 GE-ON-SI LASERS 267
JIFENG LIU
12.1 INTRODUCTION 267
12.2 MODELING AND ANALYSES OF BAND-ENGINEERED GE OPTICAL GAIN
MEDIA 268
12.2.1 OPTICAL GAIN FROM THE DIRECT GAP TRANSITION OF GE 268
12.2.1.1 UNSTRAINED GE 268
12.2.1.2 TENSILE STRAINED GE 269
12.2.2 BAND-ENGINEERING BY COMBINING TENSILE STRAIN WITH N-TYPE
DOPING 270
12.2.3 FCA LOSSES 271
12.2.4 BAND GAP NARROWING IN N
+
GE 274
12.2.5 NET OPTICAL GAIN ANALYSES FOR TENSILE-STRAINED N
+
GE 275
12.2.6 COCKTAIL BAND-ENGINEERING APPROACH INVOLVING SN ALLOYING 277
12.2.7 TOWARD HIGH PERFORMANCE GE QW STRUCTURES 279
12.3 FABRICATION OF BAND-ENGINEERED GE-ON-SI 280
12.3.1 TENSILE STRAINED GE-ON-SI 281
12.3.2 N-TYPE DOPING 282
12.3.2.1 REGULAR IN SITU DOPING 284
12.3.2.2 DELTA DOPING FOLLOWED BY THERMALLY ACTIVATED DRIVE-IN
DIFFUSION 285
12.3.2.3 DIFFUSION DOPING FROM SOD SOURCES 286
12.3.3 SN ALLOYING 287
12.4 BAND-ENGINEERED GE-ON-SI LIGHT EMITTERS 288
12.4.1 SPONTANEOUS EMISSION 289
12.4.1.1 FEATURES OF DIRECT GAP EMISSION FROM GE 289
12.4.1.2 SPONTANEOUS EMISSION FROM GE AND GESN MICROCAVITIES 293
12.4.2 OPTICAL GAIN 294
12.4.3 OPTICALLY-PUMPED GE-ON-SI LASERS 297
12.4.4 ELECTRICALLY-PUMPED GE-ON-SI LASERS 298
12.5 CONCLUSIONS 303
ACKNOWLEDGMENTS 303
REFERENCES 303
INDEX 311 |
| any_adam_object | 1 |
| author2 | Wada, Kazumi |
| author2_role | edt |
| author2_variant | k w kw |
| author_GND | (DE-588)1073554341 |
| author_facet | Wada, Kazumi |
| building | Verbundindex |
| bvnumber | BV042675368 |
| classification_rvk | VE 9580 ZN 3460 |
| ctrlnum | (OCoLC)915359609 (DE-599)DNB1065330693 |
| dewey-full | 540 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 540 - Chemistry and allied sciences |
| dewey-raw | 540 |
| dewey-search | 540 |
| dewey-sort | 3540 |
| dewey-tens | 540 - Chemistry and allied sciences |
| discipline | Chemie / Pharmazie Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| genre | (DE-588)4143413-4 Aufsatzsammlung gnd-content |
| genre_facet | Aufsatzsammlung |
| id | DE-604.BV042675368 |
| illustrated | Illustrated |
| indexdate | 2024-08-03T02:31:13Z |
| institution | BVB |
| isbn | 9783527328215 9783527650200 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028107328 |
| oclc_num | 915359609 |
| open_access_boolean | |
| owner | DE-83 DE-11 DE-29T DE-355 DE-BY-UBR DE-703 DE-19 DE-BY-UBM |
| owner_facet | DE-83 DE-11 DE-29T DE-355 DE-BY-UBR DE-703 DE-19 DE-BY-UBM |
| physical | XV, 316 S. Ill., graph. Darst. |
| publishDate | 2015 |
| publishDateSearch | 2015 |
| publishDateSort | 2015 |
| publisher | Wiley-VCH |
| record_format | marc |
| spelling | Photonics and electronics with germanium ed. by Kazumi Wada ... Weinheim Wiley-VCH 2015 XV, 316 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Germanium (DE-588)4135644-5 gnd rswk-swf Elektronik (DE-588)4014346-6 gnd rswk-swf Photonik (DE-588)4243979-6 gnd rswk-swf Elektronik Elektronische Materialien Germanium Photonik (DE-588)4143413-4 Aufsatzsammlung gnd-content Germanium (DE-588)4135644-5 s Photonik (DE-588)4243979-6 s Elektronik (DE-588)4014346-6 s DE-604 Wada, Kazumi (DE-588)1073554341 edt Erscheint auch als Online-Ausgabe, EPUB 978-3-527-65022-4 Erscheint auch als Online-Ausgabe, MOBI 978-3-527-65021-7 Erscheint auch als Online-Ausgabe, PDF 978-3-527-65023-1 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=5132951&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028107328&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Photonics and electronics with germanium Germanium (DE-588)4135644-5 gnd Elektronik (DE-588)4014346-6 gnd Photonik (DE-588)4243979-6 gnd |
| subject_GND | (DE-588)4135644-5 (DE-588)4014346-6 (DE-588)4243979-6 (DE-588)4143413-4 |
| title | Photonics and electronics with germanium |
| title_auth | Photonics and electronics with germanium |
| title_exact_search | Photonics and electronics with germanium |
| title_full | Photonics and electronics with germanium ed. by Kazumi Wada ... |
| title_fullStr | Photonics and electronics with germanium ed. by Kazumi Wada ... |
| title_full_unstemmed | Photonics and electronics with germanium ed. by Kazumi Wada ... |
| title_short | Photonics and electronics with germanium |
| title_sort | photonics and electronics with germanium |
| topic | Germanium (DE-588)4135644-5 gnd Elektronik (DE-588)4014346-6 gnd Photonik (DE-588)4243979-6 gnd |
| topic_facet | Germanium Elektronik Photonik Aufsatzsammlung |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=5132951&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=028107328&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT wadakazumi photonicsandelectronicswithgermanium |