Basic properties of III-V devices: understanding mysterious trapping phenomena
Gespeichert in:
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| Format: | Buch |
| Sprache: | English |
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Kassel
Kassel Univ. Press
2014
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| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XX, 742 S. graph. Darst. 25 cm |
| ISBN: | 9783862195411 |
Internformat
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CONTENTS
PREFACE XV
CHAPTER 1 INTRODUCTION 1
REFERENCES 8
CHAPTER 2 MATERIAL JUNCTIONS
11
2.1 BASIC DOPED AND UNDOPED MATERIAL JUNCTIONS 12
2.1.1 ABRUPT P-N JUNCTION 12
2.1.2 ONE-SIDED ABRUPT P-N JUNCTION 19
2.1.3 METAL-VACUUM JUNCTION 23
2.1.4 SEMICONDUCTOR-VACUUM JUNCTION 24
2.2 SCHOTTKY CONTACT 29
2.2.1 IDEAL METAL-SEMICONDUCTOR JUNCTION 29
2.2.2 METAL-SEMICONDUCTOR JUNCTION WITH INTERFACE STATES 35
2.2.3 CURRENT-VOLTAGE CHARACTERISTIC 38
2.2.4 THERMIONIC EMISSION THEORY 40
2.2.5 DIFFUSION THEORY 44
2.2.6 GENERALIZED THEORY 45
2.2.7 IMAGE FORCE BARRIER LOWERING 47
2.2.8 PHONON SCATTERING AND REVERSE DIFFUSION 50
2.2.9 QUANTUM MECHANICAL REFLECTION AND TUNNELING PROCESSES 51
2.3 OHMIC CONTACTS 53
2.3.1 DEFINITIONS 56
2.3.2 MEASUREMENT OF THE METAL CONTACT RESISTANCE 61
2.3.3 IDEAL NONRECTIFYING METAL-SEMICONDUCTOR JUNCTION 64
2.3.4 TUNNELING BARRIER 64
2.3.5 OHMIC CONTACTS ON GAAS 65
2.3.6 OHMIC CONTACTS ON GAN 70
2.4 SEMICONDUCTOR CHANNEL STRUCTURE 71
2.5 FIELD-EFFECT TRANSISTOR CONFIGURATION 73
REFERENCES 74
CHAPTER 3 CRYSTAL STRUCTURES AND PROPERTIES 79
3.1 NI-V COMPOUND SEMICONDUCTORS 79
3.2 CRYSTAL STRUCTURES 82
3.2.1 BRAVAIS LATTICES 83
VII
HTTP://D-NB.INFO/1052283292
VIII
BASIC PROPERTIES OF III-V DEVICES
3.2.2 WIGNER-SEITZ CELL 86
3.2.3 CUBIC ZINCBLENDE STRUCTURE 87
3.2.4 WURTZITE STRUCTURE 88
3.2.5 MILLER INDICES 89
3.2.6 RECIPROCAL LATTICE 92
3.2.7 BRILLOUIN ZONES 97
3.3 BAND STRUCTURES 99
3.3.1 BAND STRUCTURE OF SILICON 100
3.3.2 BAND STRUCTURE OF GALLIUM ARSENIDE 101
3.3.3 BAND STRUCTURE OF GALLIUM NITRIDE 103
REFERENCES 105
CHAPTER 4 SUBSTRATES 107
4.1 SUBSTRATES FOR GAAS-BASED DEVICES 107
4.1.1 GAAS SUBSTRATE 108
4.1.2 INP SUBSTRATE 111
4.1.3 GAAS-ON-SI 111
4.2 SUBSTRATES FOR GAN-BASED DEVICES 114
4.2.1 SAPPHIRE 116
4.2.2 SILICON CARBIDE 119
4.2.3 ZINC OXIDE 120
4.2.4 SILICON 122
4.2.5 NATIVE GAN 127
4.2.6 ALUMINUM NITRIDE 133
4.2.7 -LIGAO, 134
4.2.8 LIALO, 135
4.3 WAFER COST 141
REFERENCES 141
CHAPTER 5 HETEROSTRUCTURES 151
5.1 TYPES OF HETEROJUNCTIONS 151
5.2 BANDGAP ENGINEERING 156
5.2.1 CONVENTIONAL III-V MATERIAL SYSTEMS 157
5.2.2 III-N MATERIAL SYSTEMS 165
5.3 COMBINATION OF HETEROJUNCTIONS 166
5.3.1 DOUBLE-HETEROSTRUCTURE 168
5.3.2 SINGLE QUANTUM WELL 169
5.3.3 DOUBLE-BARRIER TUNNELING 173
5.3.3.1 RESONANT TUNNELING DIODE (RTD) 174
5.3.3.2 RTD TRIGGER CIRCUITS 178
5.3.3.3 RTD OSCILLATORS 180
5.3.4 MULTIPLE HETEROSTRUCTURE 182
5.3.5 MULTIPLE QUANTUM WELL 183
5.3.6 SUPERLATTICE 185
CONTENTS
IX
5.3.6.1 SUPERLATTICE BUFFER LAYER 186
5.3.6.2 CRITICAL LAYER THICKNESS 188
5.3.6.3 SUPERLATTICE GATE INSULATOR 191
5.3.6.4 SUPERLATTICE OSCILLATOR 191
REFERENCES 200
CHAPTER 6 CRYSTAL DEFECTS AND LOCALIZED CHARGES 209
6.1 CRYSTAL DEFECTS 210
6.1.1 POINT DEFECTS 210
6.1.2 LINE DEFECTS 212
6.1.2.1 EDGE DISLOCATIONS 213
6.1.2.2 SCREW DISLOCATIONS 214
6.1.2.3 MIXED DISLOCATIONS 215
6.1.3 PLANAR DEFECTS 216
6.1.4 VOLUME DEFECTS 216
6.2 FORMATION ENERGY OF DEFECTS 217
6.2.1 POINT DEFECTS IN GAAS 220
6.2.2 POINT DEFECTS IN GAN 223
6.2.3 THREADING DISLOCATIONS IN GAN 228
6.3 DX CENTERS 237
6.3.1 GALLIUM ARSENIDE ALLOYS 237
6.3.2 GALLIUM NITRIDE ALLOYS 244
REFERENCES 245
CHAPTER 7 DOPING 251
7.1 MODULATION DOPING 253
7.2 (5-DOPING 258
7.3 CARRIERS IN III-V NITRIDES 264
7.3.1 SPONTANEOUS POLARIZATION 266
7.3.2 PIEZOELECTRIC POLARIZATION 270
7.3.3 POLARIZATION IN HETEROSTRUCTURES 273
7.3.4 DOPING OF ALGAN ALLOYS 278
REFERENCES 283
CHAPTER 8 TRAP CENTERS AND TRAP DYNAMICS 287
8.1 SHOCKLEY-REED-HALL DEFECT MODEL 287
8.2 TRAP DYNAMICS 294
8.3 DEEP TRAP-RELATED CAPACITANCE TRANSIENTS 300
8.3.1 STEADY-STATE MEASUREMENTS 300
8.3.2 TRANSIENT MEASUREMENTS 301
8.3.3 EMISSION TIME CONSTANT R, 303
8.3.4 TIME-DEPENDENT EMISSION AND CAPTURE OF ELECTRONS 306
REFERENCES 309
X
BASIC PROPERTIES OF III-V DEVICES
CHAPTER 9 DEEP-LEVEL TRANSIENT SPECTROSCOPY 311
9.1 CAPACITIVE DEEP LEVEL TRANSIENT SYSTEM 312
9.1.1 MAJORITY CARRIER EMISSION RATES 315
9.1.2 MINORITY CARRIER EMISSION RATES 316
9.1.3 TRAP ACTIVATION ENERGY 317
9.1.4 MEASUREMENT OF CROSS SECTION 318
9.2 CONDUCTANCE DEEP LEVEL TRANSIENT SPECTROSCOPY 319
9.3 PHOTO-INDUCED CURRENT TRANSIENT SPERCTROSCOPY 322
REFERENCES 325
CHAPTER 10 TRAPPING EFFECTS IN GAAS FIELD-EFFECT TRANSISTORS 327
10.1 TRAP LOCATIONS 328
10.2 UNINTENTIONAL BACKGROUND IMPURITIES 329
10.3 COMPENSATION OF BACKGROUND IMPURITIES 335
10.3.1 NATIVE DEFECT DEEP DONOR EL2 335
10.3.2 INTENTIONALLY DOPED DEEP ACCEPTOR CR 338
10.4 FOUR-LEVEL BAND DIAGRAM FOR SEMI-INSULATING GAAS 340
10.5 CHANNEL/SUBSTRATE INTERFACE TRAPS 342
10.5.1 BACKGATING 342
10.5.2 TRAP DYNAMICS 345
10.5.3 DRAIN LAG 349
10.6 SUBSTRATE CURRENT 350
10.7 TRAPS IN N-DOPED ALGAAS BARRIER 351
10.8 SURFACE TRAPS 354
10.8.1 METAL-INDUCED GAP STATE MODEL 354
10.8.2 UNIFIED DEFECT MODEL 355
10.8.3 DISORDER-INDUCED GAP STATE MODEL 358
10.8.4 SURFACE TRAP DYNAMICS IN GAAS FETS 362
10.8.5 GATE LAG 376
REFERENCES 377
CHAPTER 11 TRAPPING EFFECTS IN GAN FIELD-EFFECT TRANSISTORS 383
11.1 TRAP LOCATIONS 384
11.2 ALGAN SURFACE TRAPS 386
11.2.1 IDEAL ALGAN SURFACE 386
11.2.2 NON-IDEAL SURFACE 388
11.2.3 VIRTUAL GATE MODEL 395
11.3 LEAKAGE CURRENT AND THREADING DISLOCATIONS 399
11.3.1 SURFACE HOPPING MODEL 405
11.3.2 SINGLE-TRAP LEVEL TUNNELING MODEL 408
11.3.3 MULTI-TRAP LEVEL TUNNELING MODEL 411
11.3.4 THIN SURFACE BARRIER MODEL 411
11.4 TWO-LAYER GAN/ALGAN BARRIER 419
CONTENTS XI
11.4.1 UNDOPED GAN CAP LAYER 419
11.4.2 N-DOPED GAN CAP LAYER 424
11.5 THICK GAN CAPPED ALGAN/GAN HEMT 426
11.5.1 THICK UNDOPED ALGAN LAYER 427
11.5.2 THICK DOPED GAN CAP LAYER 428
11.5.3 THICK UNDOPED GAN CAP LAYER 429
11.6 ALGAN/GAN INTERFACE CHARGES 434
11.7 TRAPS IN GAN BUFFER 437
11.7.1 BUFFER TRAP IMPACTS ON DEVICE PERFORMANCE 437
11.7.2 SOURCE OF BUFFER TRAPS 439
11.7.3 COMPENSATION IN W-TYPE GAN BUFFER LAYERS 445
11.8 CURRENT COLLAPSE IN ALGAN/GAN HEMTS 447
REFERENCES 453
CHAPTER 12 SURFACE PASSIVATION 461
12.1 OVERVIEW OF PASSIVATION MATERIALS 462
12.2 SILICON NITRIDE 469
12.2.1 PROPERTIES OF AMORPHOUS SEMICONDUCTORS 469
12.2.2 PROCESS-INDUCED SIN CHEMICAL COMPOSITION 474
12.3 SIN BASED MEMORY CELLS 478
12.4 SIN DEFECT CENTERS 483
12.4.1 NITROGEN TRAP MODEL 487
12.4.2 SILICON TRAP MODEL 489
12.4.2.1 SI CENTERS 490
12.4.2.2 N CENTERS 492
12.4.2.3 SI-SI DEFECTS 492
12.4.2.4 N-N DEFECTS 493
12.4.2.5 SI-H DEFECTS 493
12.4.2.6 N-H DEFECTS 493
12.4.2.7 NEGATIVE-U DEFECTS 493
12.5 MEASUREMENT OF SIN TRAP CENTERS 498
12.6 SIN-PASSIVATED ALGAN/GAN FETS 507
12.6.1 PASSIVATION STATES VERSUS SURFACE STATES 508
12.6.2 DRAIN CURRENT COLLAPSE AND GATE LEAKAGE CURRENT 510
12.6.3 SURFACE PREPARATION AND DEPOSITION PROCESS 511
12.6.4 SPECULATION ON PASSIVATION MECHANISMS 514
12.6.5 EXAMPLES OF SIN PASSIVATED DEVICES 516
12.7 SILICON OXIDE 519
12.7.1 EJ' CENTER 525
12.7.2 E
R
'CENTER 527
12.7.3 HYDROGEN ATOM 532
12.7.4 HYDROGEN BRIDGE 536
12.8 SIO,/III-V SEMICONDUCTOR INTERFACES 538
12.9 IMPACT IONIZATION IN SILICON DIOXIDE 542
12.10 SIOI-PASSIVATED ALGAN/GAN FETS 545
XII BASIC PROPERTIES OF III-V DEVICES
12.11 OTHER PASSIVATION MATERIALS 549
A. GA,OJ 549
B. MGO 551
C. SC,OJ 552
D. SION 552
E. BCB 553
F. SRF, 553
G. ALSIN 554
H. POLYIMIDE 554
/. LT-GAN 554
12.12 PASSIVATION-INDUCED STRESS 555
12.13 CRITICAL VOLTAGE FOR ELECTRICAL DEGRADATION 561
12.14 PASSIVATION EFFECT ON SMALL-SIGNAL MODEL PARAMETERS 567
REFERENCES 568
CHAPTER 13 BREAKDOWN PHENOMENA 585
13.1 BREAKDOWN MECHANISMS 592
13.1.1 DRAIN-GATE BREAKDOWN 592
13.1.2 AVALANCHE MULTIPLICATION 593
13.2 EVOLUTION OF HOT ELECTRONS 599
13.3 ELECTRON IONIZATION THRESHOLD 607
13.3.1 KELDYSH FORMULA 616
13.3.2 IMPACT IONIZATION RATE 619
13.4 TEMPERATURE DEPENDENCE OF BREAKDOWN 624
13.4.1 TUNNELING TEMPERATURE COEFFICIENT 625
13.4.2 IMPACT IONIZATION TEMPERATURE COEFFICIENT 627
13.5 FET DESIGN IMPACT ON BREAKDOWN 637
13.5.1 FIELD PLATE TECHNOLOGY 644
13.5.2 HIGH BREAKDOWN VOLTAGE RECORDS 646
13.6 DC BREAKDOWN MEASUREMENT METHODS 649
13.6.1 TWO-TERMINAL MEASUREMENTS 650
13.6.2 THREE-TERMINAL MEASUREMENTS 652
13.6.3 DRAIN-CURRENT INJECTION TECHNIQUE 652
13.6.4 GATE-CURRENT INJECTION TECHNIQUE 655
13.7 PULSED DC BREAKDOWN MEASUREMENT METHODS 659
13.7.1 TRANSMISSION LINE PULSE TECHNIQUE 659
13.7.2 BREAKDOWN INDUCED LIGHT EMISSION 673
13.8 GAAS MESFET-BASED ULTRASHORT HIGH POWER PULSES 678
13.8.1 APPLICATION BACKGROUND 678
13.8.2 DRAIN-SOURCE BREAKDOWN PROPERTIES 679
13.8.3 GAAS MESFET IN STANDARD BJT AVALANCHE PULSING CIRCUIT 681
13.8.4 ADVANCED GAAS MESFET AVALANCHE PULSER 682
REFERENCES 684
CONTENTS XIII
APPENDIX A TRANSMISSION LINE EQUATIONS 697
A.L DIFFERENTIAL EQUATIONS FOR VOLTAGE AND CURRENT 697
A.2 TRANSMISSION LINE EQUIVALENT CIRCUIT 699
A.3 WAVE EQUATION 701
A.4 INPUT PORT RELATED TRANSMISSION LINE EQUATIONS 703
A.4.1 LOSSY TRANSMISSION LINE 703
A.4.2 LOSSLESS TRANSMISSION LINE 704
A.4.3 WEAKLY LOSSY TRANSMISSION LINE 705
A.5 OUTPUT PORT RELATED TRANSMISSION LINE EQUATIONS 707
A.5.1 LOSSY TRANSMISSION LINE 707
A.5.2 LOSSLESS TRANSMISSION LINE 708
A.6 INPUT IMPEDANCE 709
APPENDIX B SHORT CHANNEL EFFECT 711
REFERENCES 717
APPENDIX C PARASITIC BIPOLAR EFFECT 719
REFERENCES 720
APPENDIX D KINK EFFECT 721
D. 1 INTERBAND IMPACT IONIZATION AND HOLE TRAPPING 721
D.2 INTERBAND IMPACT IONIZATION AND HOLE PILE-UP 724
D.3 TRAP-INDUCED KINK 726
REFERENCES 729
APPENDIX E GATE DIELECTRICS 731
REFERENCES 733
ABOUT THE AUTHOR 735
INDEX 737 |
| any_adam_object | 1 |
| author | Kompa, Günter 1943- |
| author_GND | (DE-588)1049294165 |
| author_facet | Kompa, Günter 1943- |
| author_role | aut |
| author_sort | Kompa, Günter 1943- |
| author_variant | g k gk |
| building | Verbundindex |
| bvnumber | BV042558093 |
| ctrlnum | (OCoLC)881821841 (DE-599)DNB1052283292 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV042558093 |
| illustrated | Illustrated |
| indexdate | 2024-09-10T01:43:43Z |
| institution | BVB |
| isbn | 9783862195411 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027991855 |
| oclc_num | 881821841 |
| open_access_boolean | |
| owner | DE-29T |
| owner_facet | DE-29T |
| physical | XX, 742 S. graph. Darst. 25 cm |
| publishDate | 2014 |
| publishDateSearch | 2014 |
| publishDateSort | 2014 |
| publisher | Kassel Univ. Press |
| record_format | marc |
| spelling | Kompa, Günter 1943- Verfasser (DE-588)1049294165 aut Basic properties of III-V devices understanding mysterious trapping phenomena Günter Kompa Kassel Kassel Univ. Press 2014 XX, 742 S. graph. Darst. 25 cm txt rdacontent n rdamedia nc rdacarrier Literaturangaben DLTS (DE-588)4150331-4 gnd rswk-swf Elektronischer Transport (DE-588)4210733-7 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 s Drei-Fünf-Halbleiter (DE-588)4150649-2 s Gitterbaufehler (DE-588)4125030-8 s Elektronischer Transport (DE-588)4210733-7 s DLTS (DE-588)4150331-4 s DE-604 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=4690616&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027991855&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Kompa, Günter 1943- Basic properties of III-V devices understanding mysterious trapping phenomena DLTS (DE-588)4150331-4 gnd Elektronischer Transport (DE-588)4210733-7 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Gitterbaufehler (DE-588)4125030-8 gnd |
| subject_GND | (DE-588)4150331-4 (DE-588)4210733-7 (DE-588)4150649-2 (DE-588)4113826-0 (DE-588)4125030-8 |
| title | Basic properties of III-V devices understanding mysterious trapping phenomena |
| title_auth | Basic properties of III-V devices understanding mysterious trapping phenomena |
| title_exact_search | Basic properties of III-V devices understanding mysterious trapping phenomena |
| title_full | Basic properties of III-V devices understanding mysterious trapping phenomena Günter Kompa |
| title_fullStr | Basic properties of III-V devices understanding mysterious trapping phenomena Günter Kompa |
| title_full_unstemmed | Basic properties of III-V devices understanding mysterious trapping phenomena Günter Kompa |
| title_short | Basic properties of III-V devices |
| title_sort | basic properties of iii v devices understanding mysterious trapping phenomena |
| title_sub | understanding mysterious trapping phenomena |
| topic | DLTS (DE-588)4150331-4 gnd Elektronischer Transport (DE-588)4210733-7 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Gitterbaufehler (DE-588)4125030-8 gnd |
| topic_facet | DLTS Elektronischer Transport Drei-Fünf-Halbleiter Halbleiterbauelement Gitterbaufehler |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=4690616&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027991855&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT kompagunter basicpropertiesofiiivdevicesunderstandingmysterioustrappingphenomena |