Analysis and Simulation of Semiconductor Devices:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Vienna
Springer Vienna
1984
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| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices |
| Beschreibung: | 1 Online-Ressource (XIV, 296 p) |
| ISBN: | 9783709187524 9783709187548 |
| DOI: | 10.1007/978-3-7091-8752-4 |
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Datensatz im Suchindex
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| author | Selberherr, Siegfried |
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| discipline | Physik |
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| isbn | 9783709187524 9783709187548 |
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| spelling | Selberherr, Siegfried Verfasser aut Analysis and Simulation of Semiconductor Devices by Siegfried Selberherr Vienna Springer Vienna 1984 1 Online-Ressource (XIV, 296 p) txt rdacontent c rdamedia cr rdacarrier The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices Physics Software engineering Optical materials Semiconductors Optical and Electronic Materials Software Engineering Halbleiter (DE-588)4022993-2 gnd rswk-swf Modell (DE-588)4039798-1 gnd rswk-swf Nichtlineare partielle Differentialgleichung (DE-588)4128900-6 gnd rswk-swf Simulation (DE-588)4055072-2 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 s Modell (DE-588)4039798-1 s Simulation (DE-588)4055072-2 s 1\p DE-604 Halbleiter (DE-588)4022993-2 s Nichtlineare partielle Differentialgleichung (DE-588)4128900-6 s 2\p DE-604 https://doi.org/10.1007/978-3-7091-8752-4 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Selberherr, Siegfried Analysis and Simulation of Semiconductor Devices Physics Software engineering Optical materials Semiconductors Optical and Electronic Materials Software Engineering Halbleiter (DE-588)4022993-2 gnd Modell (DE-588)4039798-1 gnd Nichtlineare partielle Differentialgleichung (DE-588)4128900-6 gnd Simulation (DE-588)4055072-2 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4039798-1 (DE-588)4128900-6 (DE-588)4055072-2 (DE-588)4113826-0 |
| title | Analysis and Simulation of Semiconductor Devices |
| title_auth | Analysis and Simulation of Semiconductor Devices |
| title_exact_search | Analysis and Simulation of Semiconductor Devices |
| title_full | Analysis and Simulation of Semiconductor Devices by Siegfried Selberherr |
| title_fullStr | Analysis and Simulation of Semiconductor Devices by Siegfried Selberherr |
| title_full_unstemmed | Analysis and Simulation of Semiconductor Devices by Siegfried Selberherr |
| title_short | Analysis and Simulation of Semiconductor Devices |
| title_sort | analysis and simulation of semiconductor devices |
| topic | Physics Software engineering Optical materials Semiconductors Optical and Electronic Materials Software Engineering Halbleiter (DE-588)4022993-2 gnd Modell (DE-588)4039798-1 gnd Nichtlineare partielle Differentialgleichung (DE-588)4128900-6 gnd Simulation (DE-588)4055072-2 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| topic_facet | Physics Software engineering Optical materials Semiconductors Optical and Electronic Materials Software Engineering Halbleiter Modell Nichtlineare partielle Differentialgleichung Simulation Halbleiterbauelement |
| url | https://doi.org/10.1007/978-3-7091-8752-4 |
| work_keys_str_mv | AT selberherrsiegfried analysisandsimulationofsemiconductordevices |