Semiconductor Physics: An Introduction
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Berlin, Heidelberg
Springer Berlin Heidelberg
1985
|
Ausgabe: | Third Edition |
Schriftenreihe: | Springer Series in Solid-State Sciences
40 |
Schlagworte: | |
Online-Zugang: | Volltext |
Beschreibung: | It is a pleasure to take the opportunity to express my sincere grati tude to many colleagues who provided valuable hints for improvements, even including lists of misprints (which I hope have now been complete ly eliminated).It is not possible to name all of them, and so I will only mention the interesting discussions over so many years I had with Pro fessor Hans W. Pötzl of the Technical University of Vienna on the oc casion of our common weekly semiconductor seminar. I am grateful to Professor H.-J. Queisser and Professor M. Cardona for helpful criticism. Special thanks are due to Frau Jitka Fucik for typing and Frau Viktoria Köver for drawing services. The cooperation with Dr. H. K. Lotsch of Springer-Verlag has been a pleasure. Vienna, January 1982 K. Seeger Contents 1.Elementary Properties of Semiconductors . . .. I 1.1 Insulator - Semiconductor - Semimetal - Metal 1 1.2 The Positive Hole . . . . . . . . . . . . . 3 1.3 Conduction Processes, Compensation, Law ofMass Action 4 Problems . 8 2. Energy Band Structure . 10 2.1 Single and Periodically Repeated Potential Well 10 2.2 Energy Bands by Tight Binding ofElectrons to Atoms 17 2.3 The Brillouin Zone 21 2.4 Constant Energy Surfaces 30 Problems . 33 3. Semiconductor Statistics 34 3.1 Fermi Statistics . . . . . . . . . 35 3.2 Occupation Probabilities ofImpurity Levels 39 Problems . 45 4. Charge and Energy Transport in a Nondegenerate Electron Gas |
Beschreibung: | 1 Online-Ressource (XIV, 476 p) |
ISBN: | 9783662024454 9783540155782 |
ISSN: | 0171-1873 |
DOI: | 10.1007/978-3-662-02445-4 |
Internformat
MARC
LEADER | 00000nmm a2200000zcb4500 | ||
---|---|---|---|
001 | BV042414157 | ||
003 | DE-604 | ||
005 | 00000000000000.0 | ||
007 | cr|uuu---uuuuu | ||
008 | 150316s1985 |||| o||u| ||||||eng d | ||
020 | |a 9783662024454 |c Online |9 978-3-662-02445-4 | ||
020 | |a 9783540155782 |c Print |9 978-3-540-15578-2 | ||
024 | 7 | |a 10.1007/978-3-662-02445-4 |2 doi | |
035 | |a (OCoLC)864028933 | ||
035 | |a (DE-599)BVBBV042414157 | ||
040 | |a DE-604 |b ger |e aacr | ||
041 | 0 | |a eng | |
049 | |a DE-91 |a DE-83 | ||
082 | 0 | |a 621.36 |2 23 | |
084 | |a PHY 000 |2 stub | ||
100 | 1 | |a Seeger, Karlheinz |e Verfasser |4 aut | |
245 | 1 | 0 | |a Semiconductor Physics |b An Introduction |c by Karlheinz Seeger |
250 | |a Third Edition | ||
264 | 1 | |a Berlin, Heidelberg |b Springer Berlin Heidelberg |c 1985 | |
300 | |a 1 Online-Ressource (XIV, 476 p) | ||
336 | |b txt |2 rdacontent | ||
337 | |b c |2 rdamedia | ||
338 | |b cr |2 rdacarrier | ||
490 | 0 | |a Springer Series in Solid-State Sciences |v 40 |x 0171-1873 | |
500 | |a It is a pleasure to take the opportunity to express my sincere grati tude to many colleagues who provided valuable hints for improvements, even including lists of misprints (which I hope have now been complete ly eliminated).It is not possible to name all of them, and so I will only mention the interesting discussions over so many years I had with Pro fessor Hans W. Pötzl of the Technical University of Vienna on the oc casion of our common weekly semiconductor seminar. I am grateful to Professor H.-J. Queisser and Professor M. Cardona for helpful criticism. Special thanks are due to Frau Jitka Fucik for typing and Frau Viktoria Köver for drawing services. The cooperation with Dr. H. K. Lotsch of Springer-Verlag has been a pleasure. Vienna, January 1982 K. Seeger Contents 1.Elementary Properties of Semiconductors . . .. I 1.1 Insulator - Semiconductor - Semimetal - Metal 1 1.2 The Positive Hole . . . . . . . . . . . . . 3 1.3 Conduction Processes, Compensation, Law ofMass Action 4 Problems . 8 2. Energy Band Structure . 10 2.1 Single and Periodically Repeated Potential Well 10 2.2 Energy Bands by Tight Binding ofElectrons to Atoms 17 2.3 The Brillouin Zone 21 2.4 Constant Energy Surfaces 30 Problems . 33 3. Semiconductor Statistics 34 3.1 Fermi Statistics . . . . . . . . . 35 3.2 Occupation Probabilities ofImpurity Levels 39 Problems . 45 4. Charge and Energy Transport in a Nondegenerate Electron Gas | ||
650 | 4 | |a Physics | |
650 | 4 | |a Optical materials | |
650 | 4 | |a Optics, Optoelectronics, Plasmonics and Optical Devices | |
650 | 4 | |a Optical and Electronic Materials | |
650 | 0 | 7 | |a Streuung |0 (DE-588)4058056-8 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Festkörperphysik |0 (DE-588)4016921-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Quantenoptik |0 (DE-588)4047990-0 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Diffusion |0 (DE-588)4012277-3 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Photoleitung |0 (DE-588)4174515-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Halbleiteroberfläche |0 (DE-588)4137418-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Reflexion |g Physik |0 (DE-588)4177333-0 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Halbleiterphysik |0 (DE-588)4113829-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Transportprozess |0 (DE-588)4185932-7 |2 gnd |9 rswk-swf |
655 | 7 | |8 1\p |0 (DE-588)4151278-9 |a Einführung |2 gnd-content | |
689 | 0 | 0 | |a Halbleiterphysik |0 (DE-588)4113829-6 |D s |
689 | 0 | |8 2\p |5 DE-604 | |
689 | 1 | 0 | |a Festkörperphysik |0 (DE-588)4016921-2 |D s |
689 | 1 | |8 3\p |5 DE-604 | |
689 | 2 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
689 | 2 | |8 4\p |5 DE-604 | |
689 | 3 | 0 | |a Halbleiteroberfläche |0 (DE-588)4137418-6 |D s |
689 | 3 | |8 5\p |5 DE-604 | |
689 | 4 | 0 | |a Streuung |0 (DE-588)4058056-8 |D s |
689 | 4 | |8 6\p |5 DE-604 | |
689 | 5 | 0 | |a Diffusion |0 (DE-588)4012277-3 |D s |
689 | 5 | |8 7\p |5 DE-604 | |
689 | 6 | 0 | |a Quantenoptik |0 (DE-588)4047990-0 |D s |
689 | 6 | |8 8\p |5 DE-604 | |
689 | 7 | 0 | |a Transportprozess |0 (DE-588)4185932-7 |D s |
689 | 7 | |8 9\p |5 DE-604 | |
689 | 8 | 0 | |a Photoleitung |0 (DE-588)4174515-2 |D s |
689 | 8 | |8 10\p |5 DE-604 | |
689 | 9 | 0 | |a Reflexion |g Physik |0 (DE-588)4177333-0 |D s |
689 | 9 | |8 11\p |5 DE-604 | |
856 | 4 | 0 | |u https://doi.org/10.1007/978-3-662-02445-4 |x Verlag |3 Volltext |
912 | |a ZDB-2-PHA |a ZDB-2-BAE | ||
940 | 1 | |q ZDB-2-PHA_Archive | |
999 | |a oai:aleph.bib-bvb.de:BVB01-027849650 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 3\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 4\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 5\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 6\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 7\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 8\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 9\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 10\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 11\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
_version_ | 1804153079449255936 |
---|---|
any_adam_object | |
author | Seeger, Karlheinz |
author_facet | Seeger, Karlheinz |
author_role | aut |
author_sort | Seeger, Karlheinz |
author_variant | k s ks |
building | Verbundindex |
bvnumber | BV042414157 |
classification_tum | PHY 000 |
collection | ZDB-2-PHA ZDB-2-BAE |
ctrlnum | (OCoLC)864028933 (DE-599)BVBBV042414157 |
dewey-full | 621.36 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.36 |
dewey-search | 621.36 |
dewey-sort | 3621.36 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
doi_str_mv | 10.1007/978-3-662-02445-4 |
edition | Third Edition |
format | Electronic eBook |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>05284nmm a2200925zcb4500</leader><controlfield tag="001">BV042414157</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150316s1985 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783662024454</subfield><subfield code="c">Online</subfield><subfield code="9">978-3-662-02445-4</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783540155782</subfield><subfield code="c">Print</subfield><subfield code="9">978-3-540-15578-2</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-3-662-02445-4</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)864028933</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042414157</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.36</subfield><subfield code="2">23</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Seeger, Karlheinz</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Semiconductor Physics</subfield><subfield code="b">An Introduction</subfield><subfield code="c">by Karlheinz Seeger</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">Third Edition</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin, Heidelberg</subfield><subfield code="b">Springer Berlin Heidelberg</subfield><subfield code="c">1985</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (XIV, 476 p)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Springer Series in Solid-State Sciences</subfield><subfield code="v">40</subfield><subfield code="x">0171-1873</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">It is a pleasure to take the opportunity to express my sincere grati tude to many colleagues who provided valuable hints for improvements, even including lists of misprints (which I hope have now been complete ly eliminated).It is not possible to name all of them, and so I will only mention the interesting discussions over so many years I had with Pro fessor Hans W. Pötzl of the Technical University of Vienna on the oc casion of our common weekly semiconductor seminar. I am grateful to Professor H.-J. Queisser and Professor M. Cardona for helpful criticism. Special thanks are due to Frau Jitka Fucik for typing and Frau Viktoria Köver for drawing services. The cooperation with Dr. H. K. Lotsch of Springer-Verlag has been a pleasure. Vienna, January 1982 K. Seeger Contents 1.Elementary Properties of Semiconductors . . .. I 1.1 Insulator - Semiconductor - Semimetal - Metal 1 1.2 The Positive Hole . . . . . . . . . . . . . 3 1.3 Conduction Processes, Compensation, Law ofMass Action 4 Problems . 8 2. Energy Band Structure . 10 2.1 Single and Periodically Repeated Potential Well 10 2.2 Energy Bands by Tight Binding ofElectrons to Atoms 17 2.3 The Brillouin Zone 21 2.4 Constant Energy Surfaces 30 Problems . 33 3. Semiconductor Statistics 34 3.1 Fermi Statistics . . . . . . . . . 35 3.2 Occupation Probabilities ofImpurity Levels 39 Problems . 45 4. Charge and Energy Transport in a Nondegenerate Electron Gas</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optical materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optics, Optoelectronics, Plasmonics and Optical Devices</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optical and Electronic Materials</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Streuung</subfield><subfield code="0">(DE-588)4058056-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Festkörperphysik</subfield><subfield code="0">(DE-588)4016921-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Quantenoptik</subfield><subfield code="0">(DE-588)4047990-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Diffusion</subfield><subfield code="0">(DE-588)4012277-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Photoleitung</subfield><subfield code="0">(DE-588)4174515-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiteroberfläche</subfield><subfield code="0">(DE-588)4137418-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Reflexion</subfield><subfield code="g">Physik</subfield><subfield code="0">(DE-588)4177333-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Transportprozess</subfield><subfield code="0">(DE-588)4185932-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="8">1\p</subfield><subfield code="0">(DE-588)4151278-9</subfield><subfield code="a">Einführung</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Festkörperphysik</subfield><subfield code="0">(DE-588)4016921-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="8">4\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="3" ind2="0"><subfield code="a">Halbleiteroberfläche</subfield><subfield code="0">(DE-588)4137418-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2=" "><subfield code="8">5\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="4" ind2="0"><subfield code="a">Streuung</subfield><subfield code="0">(DE-588)4058056-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="4" ind2=" "><subfield code="8">6\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="5" ind2="0"><subfield code="a">Diffusion</subfield><subfield code="0">(DE-588)4012277-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="5" ind2=" "><subfield code="8">7\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="6" ind2="0"><subfield code="a">Quantenoptik</subfield><subfield code="0">(DE-588)4047990-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="6" ind2=" "><subfield code="8">8\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="7" ind2="0"><subfield code="a">Transportprozess</subfield><subfield code="0">(DE-588)4185932-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="7" ind2=" "><subfield code="8">9\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="8" ind2="0"><subfield code="a">Photoleitung</subfield><subfield code="0">(DE-588)4174515-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="8" ind2=" "><subfield code="8">10\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="9" ind2="0"><subfield code="a">Reflexion</subfield><subfield code="g">Physik</subfield><subfield code="0">(DE-588)4177333-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="9" ind2=" "><subfield code="8">11\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-3-662-02445-4</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-PHA</subfield><subfield code="a">ZDB-2-BAE</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-PHA_Archive</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027849650</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">4\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">5\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">6\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">7\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">8\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">9\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">10\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">11\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
genre | 1\p (DE-588)4151278-9 Einführung gnd-content |
genre_facet | Einführung |
id | DE-604.BV042414157 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T01:20:54Z |
institution | BVB |
isbn | 9783662024454 9783540155782 |
issn | 0171-1873 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027849650 |
oclc_num | 864028933 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM DE-83 |
owner_facet | DE-91 DE-BY-TUM DE-83 |
physical | 1 Online-Ressource (XIV, 476 p) |
psigel | ZDB-2-PHA ZDB-2-BAE ZDB-2-PHA_Archive |
publishDate | 1985 |
publishDateSearch | 1985 |
publishDateSort | 1985 |
publisher | Springer Berlin Heidelberg |
record_format | marc |
series2 | Springer Series in Solid-State Sciences |
spelling | Seeger, Karlheinz Verfasser aut Semiconductor Physics An Introduction by Karlheinz Seeger Third Edition Berlin, Heidelberg Springer Berlin Heidelberg 1985 1 Online-Ressource (XIV, 476 p) txt rdacontent c rdamedia cr rdacarrier Springer Series in Solid-State Sciences 40 0171-1873 It is a pleasure to take the opportunity to express my sincere grati tude to many colleagues who provided valuable hints for improvements, even including lists of misprints (which I hope have now been complete ly eliminated).It is not possible to name all of them, and so I will only mention the interesting discussions over so many years I had with Pro fessor Hans W. Pötzl of the Technical University of Vienna on the oc casion of our common weekly semiconductor seminar. I am grateful to Professor H.-J. Queisser and Professor M. Cardona for helpful criticism. Special thanks are due to Frau Jitka Fucik for typing and Frau Viktoria Köver for drawing services. The cooperation with Dr. H. K. Lotsch of Springer-Verlag has been a pleasure. Vienna, January 1982 K. Seeger Contents 1.Elementary Properties of Semiconductors . . .. I 1.1 Insulator - Semiconductor - Semimetal - Metal 1 1.2 The Positive Hole . . . . . . . . . . . . . 3 1.3 Conduction Processes, Compensation, Law ofMass Action 4 Problems . 8 2. Energy Band Structure . 10 2.1 Single and Periodically Repeated Potential Well 10 2.2 Energy Bands by Tight Binding ofElectrons to Atoms 17 2.3 The Brillouin Zone 21 2.4 Constant Energy Surfaces 30 Problems . 33 3. Semiconductor Statistics 34 3.1 Fermi Statistics . . . . . . . . . 35 3.2 Occupation Probabilities ofImpurity Levels 39 Problems . 45 4. Charge and Energy Transport in a Nondegenerate Electron Gas Physics Optical materials Optics, Optoelectronics, Plasmonics and Optical Devices Optical and Electronic Materials Streuung (DE-588)4058056-8 gnd rswk-swf Festkörperphysik (DE-588)4016921-2 gnd rswk-swf Quantenoptik (DE-588)4047990-0 gnd rswk-swf Diffusion (DE-588)4012277-3 gnd rswk-swf Photoleitung (DE-588)4174515-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiteroberfläche (DE-588)4137418-6 gnd rswk-swf Reflexion Physik (DE-588)4177333-0 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Transportprozess (DE-588)4185932-7 gnd rswk-swf 1\p (DE-588)4151278-9 Einführung gnd-content Halbleiterphysik (DE-588)4113829-6 s 2\p DE-604 Festkörperphysik (DE-588)4016921-2 s 3\p DE-604 Halbleiter (DE-588)4022993-2 s 4\p DE-604 Halbleiteroberfläche (DE-588)4137418-6 s 5\p DE-604 Streuung (DE-588)4058056-8 s 6\p DE-604 Diffusion (DE-588)4012277-3 s 7\p DE-604 Quantenoptik (DE-588)4047990-0 s 8\p DE-604 Transportprozess (DE-588)4185932-7 s 9\p DE-604 Photoleitung (DE-588)4174515-2 s 10\p DE-604 Reflexion Physik (DE-588)4177333-0 s 11\p DE-604 https://doi.org/10.1007/978-3-662-02445-4 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 5\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 6\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 7\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 8\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 9\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 10\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 11\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Seeger, Karlheinz Semiconductor Physics An Introduction Physics Optical materials Optics, Optoelectronics, Plasmonics and Optical Devices Optical and Electronic Materials Streuung (DE-588)4058056-8 gnd Festkörperphysik (DE-588)4016921-2 gnd Quantenoptik (DE-588)4047990-0 gnd Diffusion (DE-588)4012277-3 gnd Photoleitung (DE-588)4174515-2 gnd Halbleiter (DE-588)4022993-2 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd Reflexion Physik (DE-588)4177333-0 gnd Halbleiterphysik (DE-588)4113829-6 gnd Transportprozess (DE-588)4185932-7 gnd |
subject_GND | (DE-588)4058056-8 (DE-588)4016921-2 (DE-588)4047990-0 (DE-588)4012277-3 (DE-588)4174515-2 (DE-588)4022993-2 (DE-588)4137418-6 (DE-588)4177333-0 (DE-588)4113829-6 (DE-588)4185932-7 (DE-588)4151278-9 |
title | Semiconductor Physics An Introduction |
title_auth | Semiconductor Physics An Introduction |
title_exact_search | Semiconductor Physics An Introduction |
title_full | Semiconductor Physics An Introduction by Karlheinz Seeger |
title_fullStr | Semiconductor Physics An Introduction by Karlheinz Seeger |
title_full_unstemmed | Semiconductor Physics An Introduction by Karlheinz Seeger |
title_short | Semiconductor Physics |
title_sort | semiconductor physics an introduction |
title_sub | An Introduction |
topic | Physics Optical materials Optics, Optoelectronics, Plasmonics and Optical Devices Optical and Electronic Materials Streuung (DE-588)4058056-8 gnd Festkörperphysik (DE-588)4016921-2 gnd Quantenoptik (DE-588)4047990-0 gnd Diffusion (DE-588)4012277-3 gnd Photoleitung (DE-588)4174515-2 gnd Halbleiter (DE-588)4022993-2 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd Reflexion Physik (DE-588)4177333-0 gnd Halbleiterphysik (DE-588)4113829-6 gnd Transportprozess (DE-588)4185932-7 gnd |
topic_facet | Physics Optical materials Optics, Optoelectronics, Plasmonics and Optical Devices Optical and Electronic Materials Streuung Festkörperphysik Quantenoptik Diffusion Photoleitung Halbleiter Halbleiteroberfläche Reflexion Physik Halbleiterphysik Transportprozess Einführung |
url | https://doi.org/10.1007/978-3-662-02445-4 |
work_keys_str_mv | AT seegerkarlheinz semiconductorphysicsanintroduction |