Amorphous and crystalline Silicon Carbide IV: Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991
Gespeichert in:
Weitere Verfasser: | , , |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Berlin, Heidelberg
Springer Berlin Heidelberg
1992
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Schriftenreihe: | Springer Proceedings in Physics
71 |
Schlagworte: | |
Online-Zugang: | Volltext |
Beschreibung: | Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics |
Beschreibung: | 1 Online-Ressource (XII, 432p. 336 illus) |
ISBN: | 9783642848049 9783642848063 |
DOI: | 10.1007/978-3-642-84804-9 |
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Datensatz im Suchindex
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dewey-search | 548 |
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dewey-tens | 540 - Chemistry and allied sciences |
discipline | Chemie / Pharmazie Physik |
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spelling | Yang, Cary Y. 1948- (DE-588)1225945879 edt Amorphous and crystalline Silicon Carbide IV Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991 C. Y. Yang, M. M. Rahman, G. L. Harris (Eds.) Berlin, Heidelberg Springer Berlin Heidelberg 1992 1 Online-Ressource (XII, 432p. 336 illus) txt rdacontent c rdamedia cr rdacarrier Springer Proceedings in Physics 71 Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics Physics Crystallography Electronics Electronics and Microelectronics, Instrumentation Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf 1\p (DE-588)1071861417 Konferenzschrift 1991 Santa Clara Calif. gnd-content Siliciumcarbid (DE-588)4055009-6 s 2\p DE-604 Rahman, M. Mahmudur edt Harris, Gary Lynn 1953- (DE-588)1056095121 edt Erscheint auch als Druck-Ausgabe 3-540-55687-7 Erscheint auch als Druck-Ausgabe 0-387-55687-7 https://doi.org/10.1007/978-3-642-84804-9 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Amorphous and crystalline Silicon Carbide IV Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991 Physics Crystallography Electronics Electronics and Microelectronics, Instrumentation Siliciumcarbid (DE-588)4055009-6 gnd |
subject_GND | (DE-588)4055009-6 (DE-588)1071861417 |
title | Amorphous and crystalline Silicon Carbide IV Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991 |
title_auth | Amorphous and crystalline Silicon Carbide IV Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991 |
title_exact_search | Amorphous and crystalline Silicon Carbide IV Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991 |
title_full | Amorphous and crystalline Silicon Carbide IV Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991 C. Y. Yang, M. M. Rahman, G. L. Harris (Eds.) |
title_fullStr | Amorphous and crystalline Silicon Carbide IV Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991 C. Y. Yang, M. M. Rahman, G. L. Harris (Eds.) |
title_full_unstemmed | Amorphous and crystalline Silicon Carbide IV Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991 C. Y. Yang, M. M. Rahman, G. L. Harris (Eds.) |
title_short | Amorphous and crystalline Silicon Carbide IV |
title_sort | amorphous and crystalline silicon carbide iv proceedings of the 4th international conference santa clara ca october 9 11 1991 |
title_sub | Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991 |
topic | Physics Crystallography Electronics Electronics and Microelectronics, Instrumentation Siliciumcarbid (DE-588)4055009-6 gnd |
topic_facet | Physics Crystallography Electronics Electronics and Microelectronics, Instrumentation Siliciumcarbid Konferenzschrift 1991 Santa Clara Calif. |
url | https://doi.org/10.1007/978-3-642-84804-9 |
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