Hydrogen in Crystalline Semiconductors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Berlin, Heidelberg
Springer Berlin Heidelberg
1992
|
| Schriftenreihe: | Springer Series in Materials Science
16 |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | This monograph arose out of the recognition of the importance of hydrogen in modern semiconductor technology. Hydrogen is a component of most chemicals used in the fabrication of electronic and photonic devices, is easily incorporated into semiconductors and it is a model impurity for studying defect reactions in solids. While writing this volume we have received a good deal of encouragement from our colleagues at AT&T Bell Laboratories, State University of New York at Albany and Lehigh University, and from collaborators at other institutions: to them we extend our sincere appreciation. In particular we would like to thank W. e. Dautremont-Smith, J. Lopata, V. Swaminathan, K. Bergman, L. e. Synder, P. Deak, J. T. Borenstein, T. S. Shi, D. Tulchinsky, G. G. DeLeo, W. B. Fowler, G. D. Watkins and D. Kozuch for their crucial contributions to this work. We would also like to thank Mrs. Danuta Sowinska-Kahn for her unfailing expertise in preparing much of the artwork. Finally we owe a great debt to Helmut Lotsch of Springer-Verlag for his initial suggestion to write this book and then his patient and professional guidance in seeing the project to fruition. Murray Hill, NJ S. J. Pearton Albany, NY J. w. Corbett Bethlehem, P A M. Stavola October 1991 v Contents 1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2. Hydrogen Incorporation in Crystalline Semiconductors 4 2. 1 Techniques for Hydrogen Incorporation in Semiconductors . . . . . . . . . . . . . . . . . . . . . . . 5 2. 1. 1 Hydrogen Plasma Exposure. . . . . . . . . . . . . . . . . . . 5 2. 1. 2 Hydrogen Implantation . . . . . . |
| Beschreibung: | 1 Online-Ressource (XI, 363 p) |
| ISBN: | 9783642847783 9783540554912 |
| ISSN: | 0933-033X |
| DOI: | 10.1007/978-3-642-84778-3 |
Internformat
MARC
| LEADER | 00000nmm a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV042413921 | ||
| 003 | DE-604 | ||
| 005 | 20171009 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 150316s1992 |||| o||u| ||||||eng d | ||
| 020 | |a 9783642847783 |c Online |9 978-3-642-84778-3 | ||
| 020 | |a 9783540554912 |c Print |9 978-3-540-55491-2 | ||
| 024 | 7 | |a 10.1007/978-3-642-84778-3 |2 doi | |
| 035 | |a (OCoLC)863818343 | ||
| 035 | |a (DE-599)BVBBV042413921 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-83 | ||
| 082 | 0 | |a 530.41 |2 23 | |
| 084 | |a PHY 000 |2 stub | ||
| 100 | 1 | |a Pearton, Stephen J. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Hydrogen in Crystalline Semiconductors |c by Stephen J. Pearton, James W. Corbett, Michael Stavola |
| 264 | 1 | |a Berlin, Heidelberg |b Springer Berlin Heidelberg |c 1992 | |
| 300 | |a 1 Online-Ressource (XI, 363 p) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 1 | |a Springer Series in Materials Science |v 16 |x 0933-033X | |
| 500 | |a This monograph arose out of the recognition of the importance of hydrogen in modern semiconductor technology. Hydrogen is a component of most chemicals used in the fabrication of electronic and photonic devices, is easily incorporated into semiconductors and it is a model impurity for studying defect reactions in solids. While writing this volume we have received a good deal of encouragement from our colleagues at AT&T Bell Laboratories, State University of New York at Albany and Lehigh University, and from collaborators at other institutions: to them we extend our sincere appreciation. In particular we would like to thank W. e. Dautremont-Smith, J. Lopata, V. Swaminathan, K. Bergman, L. e. Synder, P. Deak, J. T. Borenstein, T. S. Shi, D. Tulchinsky, G. G. DeLeo, W. B. Fowler, G. D. Watkins and D. Kozuch for their crucial contributions to this work. We would also like to thank Mrs. Danuta Sowinska-Kahn for her unfailing expertise in preparing much of the artwork. Finally we owe a great debt to Helmut Lotsch of Springer-Verlag for his initial suggestion to write this book and then his patient and professional guidance in seeing the project to fruition. Murray Hill, NJ S. J. Pearton Albany, NY J. w. Corbett Bethlehem, P A M. Stavola October 1991 v Contents 1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2. Hydrogen Incorporation in Crystalline Semiconductors 4 2. 1 Techniques for Hydrogen Incorporation in Semiconductors . . . . . . . . . . . . . . . . . . . . . . . 5 2. 1. 1 Hydrogen Plasma Exposure. . . . . . . . . . . . . . . . . . . 5 2. 1. 2 Hydrogen Implantation . . . . . . | ||
| 650 | 4 | |a Physics | |
| 650 | 4 | |a Chemistry, Physical organic | |
| 650 | 4 | |a Electronics | |
| 650 | 4 | |a Condensed Matter Physics | |
| 650 | 4 | |a Physical Chemistry | |
| 650 | 4 | |a Electronics and Microelectronics, Instrumentation | |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Wasserstoff |0 (DE-588)4064784-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Störstelle |0 (DE-588)4193400-3 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Störstelle |0 (DE-588)4193400-3 |D s |
| 689 | 0 | 2 | |a Wasserstoff |0 (DE-588)4064784-5 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Corbett, James W. |e Sonstige |4 oth | |
| 700 | 1 | |a Stavola, Michael |e Sonstige |4 oth | |
| 830 | 0 | |a Springer Series in Materials Science |v 16 |w (DE-604)BV000683335 |9 16 | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-3-642-84778-3 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-PHA |a ZDB-2-BAE | ||
| 940 | 1 | |q ZDB-2-PHA_Archive | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-027849414 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804153078906093568 |
|---|---|
| any_adam_object | |
| author | Pearton, Stephen J. |
| author_facet | Pearton, Stephen J. |
| author_role | aut |
| author_sort | Pearton, Stephen J. |
| author_variant | s j p sj sjp |
| building | Verbundindex |
| bvnumber | BV042413921 |
| classification_tum | PHY 000 |
| collection | ZDB-2-PHA ZDB-2-BAE |
| ctrlnum | (OCoLC)863818343 (DE-599)BVBBV042413921 |
| dewey-full | 530.41 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 530 - Physics |
| dewey-raw | 530.41 |
| dewey-search | 530.41 |
| dewey-sort | 3530.41 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| doi_str_mv | 10.1007/978-3-642-84778-3 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03703nmm a2200565zcb4500</leader><controlfield tag="001">BV042413921</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20171009 </controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150316s1992 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783642847783</subfield><subfield code="c">Online</subfield><subfield code="9">978-3-642-84778-3</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783540554912</subfield><subfield code="c">Print</subfield><subfield code="9">978-3-540-55491-2</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-3-642-84778-3</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)863818343</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042413921</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">530.41</subfield><subfield code="2">23</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Pearton, Stephen J.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Hydrogen in Crystalline Semiconductors</subfield><subfield code="c">by Stephen J. Pearton, James W. Corbett, Michael Stavola</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin, Heidelberg</subfield><subfield code="b">Springer Berlin Heidelberg</subfield><subfield code="c">1992</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (XI, 363 p)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Springer Series in Materials Science</subfield><subfield code="v">16</subfield><subfield code="x">0933-033X</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">This monograph arose out of the recognition of the importance of hydrogen in modern semiconductor technology. Hydrogen is a component of most chemicals used in the fabrication of electronic and photonic devices, is easily incorporated into semiconductors and it is a model impurity for studying defect reactions in solids. While writing this volume we have received a good deal of encouragement from our colleagues at AT&T Bell Laboratories, State University of New York at Albany and Lehigh University, and from collaborators at other institutions: to them we extend our sincere appreciation. In particular we would like to thank W. e. Dautremont-Smith, J. Lopata, V. Swaminathan, K. Bergman, L. e. Synder, P. Deak, J. T. Borenstein, T. S. Shi, D. Tulchinsky, G. G. DeLeo, W. B. Fowler, G. D. Watkins and D. Kozuch for their crucial contributions to this work. We would also like to thank Mrs. Danuta Sowinska-Kahn for her unfailing expertise in preparing much of the artwork. Finally we owe a great debt to Helmut Lotsch of Springer-Verlag for his initial suggestion to write this book and then his patient and professional guidance in seeing the project to fruition. Murray Hill, NJ S. J. Pearton Albany, NY J. w. Corbett Bethlehem, P A M. Stavola October 1991 v Contents 1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2. Hydrogen Incorporation in Crystalline Semiconductors 4 2. 1 Techniques for Hydrogen Incorporation in Semiconductors . . . . . . . . . . . . . . . . . . . . . . . 5 2. 1. 1 Hydrogen Plasma Exposure. . . . . . . . . . . . . . . . . . . 5 2. 1. 2 Hydrogen Implantation . . . . . .</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Chemistry, Physical organic</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Condensed Matter Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physical Chemistry</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics and Microelectronics, Instrumentation</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Wasserstoff</subfield><subfield code="0">(DE-588)4064784-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Störstelle</subfield><subfield code="0">(DE-588)4193400-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Störstelle</subfield><subfield code="0">(DE-588)4193400-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Wasserstoff</subfield><subfield code="0">(DE-588)4064784-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Corbett, James W.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Stavola, Michael</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Springer Series in Materials Science</subfield><subfield code="v">16</subfield><subfield code="w">(DE-604)BV000683335</subfield><subfield code="9">16</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-3-642-84778-3</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-PHA</subfield><subfield code="a">ZDB-2-BAE</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-PHA_Archive</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027849414</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| id | DE-604.BV042413921 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:20:54Z |
| institution | BVB |
| isbn | 9783642847783 9783540554912 |
| issn | 0933-033X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027849414 |
| oclc_num | 863818343 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | 1 Online-Ressource (XI, 363 p) |
| psigel | ZDB-2-PHA ZDB-2-BAE ZDB-2-PHA_Archive |
| publishDate | 1992 |
| publishDateSearch | 1992 |
| publishDateSort | 1992 |
| publisher | Springer Berlin Heidelberg |
| record_format | marc |
| series | Springer Series in Materials Science |
| series2 | Springer Series in Materials Science |
| spelling | Pearton, Stephen J. Verfasser aut Hydrogen in Crystalline Semiconductors by Stephen J. Pearton, James W. Corbett, Michael Stavola Berlin, Heidelberg Springer Berlin Heidelberg 1992 1 Online-Ressource (XI, 363 p) txt rdacontent c rdamedia cr rdacarrier Springer Series in Materials Science 16 0933-033X This monograph arose out of the recognition of the importance of hydrogen in modern semiconductor technology. Hydrogen is a component of most chemicals used in the fabrication of electronic and photonic devices, is easily incorporated into semiconductors and it is a model impurity for studying defect reactions in solids. While writing this volume we have received a good deal of encouragement from our colleagues at AT&T Bell Laboratories, State University of New York at Albany and Lehigh University, and from collaborators at other institutions: to them we extend our sincere appreciation. In particular we would like to thank W. e. Dautremont-Smith, J. Lopata, V. Swaminathan, K. Bergman, L. e. Synder, P. Deak, J. T. Borenstein, T. S. Shi, D. Tulchinsky, G. G. DeLeo, W. B. Fowler, G. D. Watkins and D. Kozuch for their crucial contributions to this work. We would also like to thank Mrs. Danuta Sowinska-Kahn for her unfailing expertise in preparing much of the artwork. Finally we owe a great debt to Helmut Lotsch of Springer-Verlag for his initial suggestion to write this book and then his patient and professional guidance in seeing the project to fruition. Murray Hill, NJ S. J. Pearton Albany, NY J. w. Corbett Bethlehem, P A M. Stavola October 1991 v Contents 1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2. Hydrogen Incorporation in Crystalline Semiconductors 4 2. 1 Techniques for Hydrogen Incorporation in Semiconductors . . . . . . . . . . . . . . . . . . . . . . . 5 2. 1. 1 Hydrogen Plasma Exposure. . . . . . . . . . . . . . . . . . . 5 2. 1. 2 Hydrogen Implantation . . . . . . Physics Chemistry, Physical organic Electronics Condensed Matter Physics Physical Chemistry Electronics and Microelectronics, Instrumentation Halbleiter (DE-588)4022993-2 gnd rswk-swf Wasserstoff (DE-588)4064784-5 gnd rswk-swf Störstelle (DE-588)4193400-3 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Störstelle (DE-588)4193400-3 s Wasserstoff (DE-588)4064784-5 s 1\p DE-604 Corbett, James W. Sonstige oth Stavola, Michael Sonstige oth Springer Series in Materials Science 16 (DE-604)BV000683335 16 https://doi.org/10.1007/978-3-642-84778-3 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Pearton, Stephen J. Hydrogen in Crystalline Semiconductors Springer Series in Materials Science Physics Chemistry, Physical organic Electronics Condensed Matter Physics Physical Chemistry Electronics and Microelectronics, Instrumentation Halbleiter (DE-588)4022993-2 gnd Wasserstoff (DE-588)4064784-5 gnd Störstelle (DE-588)4193400-3 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4064784-5 (DE-588)4193400-3 |
| title | Hydrogen in Crystalline Semiconductors |
| title_auth | Hydrogen in Crystalline Semiconductors |
| title_exact_search | Hydrogen in Crystalline Semiconductors |
| title_full | Hydrogen in Crystalline Semiconductors by Stephen J. Pearton, James W. Corbett, Michael Stavola |
| title_fullStr | Hydrogen in Crystalline Semiconductors by Stephen J. Pearton, James W. Corbett, Michael Stavola |
| title_full_unstemmed | Hydrogen in Crystalline Semiconductors by Stephen J. Pearton, James W. Corbett, Michael Stavola |
| title_short | Hydrogen in Crystalline Semiconductors |
| title_sort | hydrogen in crystalline semiconductors |
| topic | Physics Chemistry, Physical organic Electronics Condensed Matter Physics Physical Chemistry Electronics and Microelectronics, Instrumentation Halbleiter (DE-588)4022993-2 gnd Wasserstoff (DE-588)4064784-5 gnd Störstelle (DE-588)4193400-3 gnd |
| topic_facet | Physics Chemistry, Physical organic Electronics Condensed Matter Physics Physical Chemistry Electronics and Microelectronics, Instrumentation Halbleiter Wasserstoff Störstelle |
| url | https://doi.org/10.1007/978-3-642-84778-3 |
| volume_link | (DE-604)BV000683335 |
| work_keys_str_mv | AT peartonstephenj hydrogenincrystallinesemiconductors AT corbettjamesw hydrogenincrystallinesemiconductors AT stavolamichael hydrogenincrystallinesemiconductors |