Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Berlin, Heidelberg
Springer Berlin Heidelberg
1993
|
| Schriftenreihe: | Springer Series in Materials Science
26 |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | The need for precision epitaxy of III-V compounds was clearly illustrated by the demonstration of the first heterostructure devices - heterostructure lasers - in the late 60's. The early studies of molecular beam epitaxy of GaAs by A.Y. Cho and lR. Arthur during the same period initiated intensive research, by many workers, on epitaxy methods that have made possible an ever increasing inventory of new solid-state devices based on the use of multilayered epitaxial structures. In addition to studies of a variety of heterostructure lasers, the GaAsl AIGaAs work rapidly expanded to include quantum well structures for both physics and device purposes, demonstration of modulation doping, the quantum Hall effect and the fractional quantum Hall effect, new transistors, and new optoelectronic devices. In the mid 1970's it became clear that the GaInAs(P)/InP system was going to be a major player in fiberoptic communication systems because of the wavelength compatibility between light sources in that system and the fused silica glass fibers |
| Beschreibung: | 1 Online-Ressource (XIV, 428p. 306 illus) |
| ISBN: | 9783642781278 9783642781292 |
| ISSN: | 0933-033X |
| DOI: | 10.1007/978-3-642-78127-8 |
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Datensatz im Suchindex
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| author | Panish, Morton B. |
| author_facet | Panish, Morton B. |
| author_role | aut |
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| author_variant | m b p mb mbp |
| building | Verbundindex |
| bvnumber | BV042413630 |
| classification_tum | PHY 000 |
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| dewey-full | 621.36 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
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| dewey-search | 621.36 |
| dewey-sort | 3621.36 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-3-642-78127-8 |
| format | Electronic eBook |
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| id | DE-604.BV042413630 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:20:53Z |
| institution | BVB |
| isbn | 9783642781278 9783642781292 |
| issn | 0933-033X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027849123 |
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| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | 1 Online-Ressource (XIV, 428p. 306 illus) |
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| publishDate | 1993 |
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| publisher | Springer Berlin Heidelberg |
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| series2 | Springer Series in Materials Science |
| spelling | Panish, Morton B. Verfasser aut Gas Source Molecular Beam Epitaxy Growth and Properties of Phosphorus Containing III-V Heterostructures by Morton B. Panish, Henryk Temkin Berlin, Heidelberg Springer Berlin Heidelberg 1993 1 Online-Ressource (XIV, 428p. 306 illus) txt rdacontent c rdamedia cr rdacarrier Springer Series in Materials Science 26 0933-033X The need for precision epitaxy of III-V compounds was clearly illustrated by the demonstration of the first heterostructure devices - heterostructure lasers - in the late 60's. The early studies of molecular beam epitaxy of GaAs by A.Y. Cho and lR. Arthur during the same period initiated intensive research, by many workers, on epitaxy methods that have made possible an ever increasing inventory of new solid-state devices based on the use of multilayered epitaxial structures. In addition to studies of a variety of heterostructure lasers, the GaAsl AIGaAs work rapidly expanded to include quantum well structures for both physics and device purposes, demonstration of modulation doping, the quantum Hall effect and the fractional quantum Hall effect, new transistors, and new optoelectronic devices. In the mid 1970's it became clear that the GaInAs(P)/InP system was going to be a major player in fiberoptic communication systems because of the wavelength compatibility between light sources in that system and the fused silica glass fibers Physics Electronics Surfaces (Physics) Optics, Optoelectronics, Plasmonics and Optical Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Gas (DE-588)4019320-2 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 s Heterostruktur (DE-588)4123378-5 s Molekularstrahlepitaxie (DE-588)4170399-6 s 1\p DE-604 Gas (DE-588)4019320-2 s 2\p DE-604 Temkin, Henryk Sonstige oth https://doi.org/10.1007/978-3-642-78127-8 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Panish, Morton B. Gas Source Molecular Beam Epitaxy Growth and Properties of Phosphorus Containing III-V Heterostructures Physics Electronics Surfaces (Physics) Optics, Optoelectronics, Plasmonics and Optical Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Molekularstrahlepitaxie (DE-588)4170399-6 gnd Heterostruktur (DE-588)4123378-5 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Gas (DE-588)4019320-2 gnd |
| subject_GND | (DE-588)4170399-6 (DE-588)4123378-5 (DE-588)4150649-2 (DE-588)4019320-2 |
| title | Gas Source Molecular Beam Epitaxy Growth and Properties of Phosphorus Containing III-V Heterostructures |
| title_auth | Gas Source Molecular Beam Epitaxy Growth and Properties of Phosphorus Containing III-V Heterostructures |
| title_exact_search | Gas Source Molecular Beam Epitaxy Growth and Properties of Phosphorus Containing III-V Heterostructures |
| title_full | Gas Source Molecular Beam Epitaxy Growth and Properties of Phosphorus Containing III-V Heterostructures by Morton B. Panish, Henryk Temkin |
| title_fullStr | Gas Source Molecular Beam Epitaxy Growth and Properties of Phosphorus Containing III-V Heterostructures by Morton B. Panish, Henryk Temkin |
| title_full_unstemmed | Gas Source Molecular Beam Epitaxy Growth and Properties of Phosphorus Containing III-V Heterostructures by Morton B. Panish, Henryk Temkin |
| title_short | Gas Source Molecular Beam Epitaxy |
| title_sort | gas source molecular beam epitaxy growth and properties of phosphorus containing iii v heterostructures |
| title_sub | Growth and Properties of Phosphorus Containing III-V Heterostructures |
| topic | Physics Electronics Surfaces (Physics) Optics, Optoelectronics, Plasmonics and Optical Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Molekularstrahlepitaxie (DE-588)4170399-6 gnd Heterostruktur (DE-588)4123378-5 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Gas (DE-588)4019320-2 gnd |
| topic_facet | Physics Electronics Surfaces (Physics) Optics, Optoelectronics, Plasmonics and Optical Devices Electronics and Microelectronics, Instrumentation Surfaces and Interfaces, Thin Films Molekularstrahlepitaxie Heterostruktur Drei-Fünf-Halbleiter Gas |
| url | https://doi.org/10.1007/978-3-642-78127-8 |
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