Ultra-Fast Silicon Bipolar Technology:
Gespeichert in:
| Weitere Verfasser: | , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Berlin, Heidelberg
Springer Berlin Heidelberg
1988
|
| Schriftenreihe: | Springer Series in Electronics and Photonics
27 |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong worldwide competition in fabricating metal-oxide-semiconductor field-effect transistor (MOSFET) memories has accelerated the pace of developments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technological progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to summarize the most recent developments and to discuss the future of bipolar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-todate information is presented. Several conclusions can be drawn from this information: the first and most important is the very large potential for future progress still existing in this field. This progress is characterized by the drive towards higher speed and lower power consumption required for complex single-chip systems, as well as by several concrete technological implementations for fulfilling these demands. The second conclusion is that a large part of this potential can be realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication |
| Beschreibung: | 1 Online-Ressource (IX, 167p. 125 illus) |
| ISBN: | 9783642743603 9783642743627 |
| ISSN: | 0172-5734 |
| DOI: | 10.1007/978-3-642-74360-3 |
Internformat
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| 500 | |a Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong worldwide competition in fabricating metal-oxide-semiconductor field-effect transistor (MOSFET) memories has accelerated the pace of developments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technological progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to summarize the most recent developments and to discuss the future of bipolar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-todate information is presented. Several conclusions can be drawn from this information: the first and most important is the very large potential for future progress still existing in this field. This progress is characterized by the drive towards higher speed and lower power consumption required for complex single-chip systems, as well as by several concrete technological implementations for fulfilling these demands. The second conclusion is that a large part of this potential can be realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication | ||
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Datensatz im Suchindex
| _version_ | 1804153077917286400 |
|---|---|
| any_adam_object | |
| author2 | Treitinger, Ludwig Miura-Mattausch, Mitiko |
| author2_role | edt edt |
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| author_facet | Treitinger, Ludwig Miura-Mattausch, Mitiko |
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| dewey-full | 620.44 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 620 - Engineering and allied operations |
| dewey-raw | 620.44 |
| dewey-search | 620.44 |
| dewey-sort | 3620.44 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik |
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| indexdate | 2024-07-10T01:20:53Z |
| institution | BVB |
| isbn | 9783642743603 9783642743627 |
| issn | 0172-5734 |
| language | English |
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| physical | 1 Online-Ressource (IX, 167p. 125 illus) |
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| series | Springer Series in Electronics and Photonics |
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| spelling | Ultra-Fast Silicon Bipolar Technology edited by Ludwig Treitinger, Mitiko Miura-Mattausch Berlin, Heidelberg Springer Berlin Heidelberg 1988 1 Online-Ressource (IX, 167p. 125 illus) txt rdacontent c rdamedia cr rdacarrier Springer Series in Electronics and Photonics 27 0172-5734 Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong worldwide competition in fabricating metal-oxide-semiconductor field-effect transistor (MOSFET) memories has accelerated the pace of developments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technological progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to summarize the most recent developments and to discuss the future of bipolar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-todate information is presented. Several conclusions can be drawn from this information: the first and most important is the very large potential for future progress still existing in this field. This progress is characterized by the drive towards higher speed and lower power consumption required for complex single-chip systems, as well as by several concrete technological implementations for fulfilling these demands. The second conclusion is that a large part of this potential can be realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication Electronics Optical materials Surfaces (Physics) Materials Science Surfaces and Interfaces, Thin Films Optical and Electronic Materials Electronics and Microelectronics, Instrumentation Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Bipolartransistor (DE-588)4145669-5 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Bipolartechnik (DE-588)4145668-3 gnd rswk-swf 1\p (DE-588)4143413-4 Aufsatzsammlung gnd-content Silicium (DE-588)4077445-4 s Bipolartechnik (DE-588)4145668-3 s 2\p DE-604 Bipolartransistor (DE-588)4145669-5 s 3\p DE-604 Halbleitertechnologie (DE-588)4158814-9 s 4\p DE-604 Treitinger, Ludwig edt Miura-Mattausch, Mitiko edt Springer Series in Electronics and Photonics 27 (DE-604)BV000023098 27 https://doi.org/10.1007/978-3-642-74360-3 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Ultra-Fast Silicon Bipolar Technology Springer Series in Electronics and Photonics Electronics Optical materials Surfaces (Physics) Materials Science Surfaces and Interfaces, Thin Films Optical and Electronic Materials Electronics and Microelectronics, Instrumentation Halbleitertechnologie (DE-588)4158814-9 gnd Bipolartransistor (DE-588)4145669-5 gnd Silicium (DE-588)4077445-4 gnd Bipolartechnik (DE-588)4145668-3 gnd |
| subject_GND | (DE-588)4158814-9 (DE-588)4145669-5 (DE-588)4077445-4 (DE-588)4145668-3 (DE-588)4143413-4 |
| title | Ultra-Fast Silicon Bipolar Technology |
| title_auth | Ultra-Fast Silicon Bipolar Technology |
| title_exact_search | Ultra-Fast Silicon Bipolar Technology |
| title_full | Ultra-Fast Silicon Bipolar Technology edited by Ludwig Treitinger, Mitiko Miura-Mattausch |
| title_fullStr | Ultra-Fast Silicon Bipolar Technology edited by Ludwig Treitinger, Mitiko Miura-Mattausch |
| title_full_unstemmed | Ultra-Fast Silicon Bipolar Technology edited by Ludwig Treitinger, Mitiko Miura-Mattausch |
| title_short | Ultra-Fast Silicon Bipolar Technology |
| title_sort | ultra fast silicon bipolar technology |
| topic | Electronics Optical materials Surfaces (Physics) Materials Science Surfaces and Interfaces, Thin Films Optical and Electronic Materials Electronics and Microelectronics, Instrumentation Halbleitertechnologie (DE-588)4158814-9 gnd Bipolartransistor (DE-588)4145669-5 gnd Silicium (DE-588)4077445-4 gnd Bipolartechnik (DE-588)4145668-3 gnd |
| topic_facet | Electronics Optical materials Surfaces (Physics) Materials Science Surfaces and Interfaces, Thin Films Optical and Electronic Materials Electronics and Microelectronics, Instrumentation Halbleitertechnologie Bipolartransistor Silicium Bipolartechnik Aufsatzsammlung |
| url | https://doi.org/10.1007/978-3-642-74360-3 |
| volume_link | (DE-604)BV000023098 |
| work_keys_str_mv | AT treitingerludwig ultrafastsiliconbipolartechnology AT miuramattauschmitiko ultrafastsiliconbipolartechnology |