Semiconductor interfaces: formation and properties ; proceedings of the workshop Les Houches, France Feb. 24 - March 6, 1987
Gespeichert in:
| Weitere Verfasser: | , , |
|---|---|
| Format: | Elektronisch Tagungsbericht E-Book |
| Sprache: | English |
| Veröffentlicht: |
Berlin, Heidelberg
Springer Berlin Heidelberg
1987
|
| Schriftenreihe: | Springer Proceedings in Physics
22 |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success |
| Beschreibung: | 1 Online-Ressource (XI, 389p. 243 illus) |
| ISBN: | 9783642729676 9783642729690 |
| DOI: | 10.1007/978-3-642-72967-6 |
Internformat
MARC
| LEADER | 00000nmm a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV042413480 | ||
| 003 | DE-604 | ||
| 005 | 20230215 | ||
| 006 | a |||| 10||| | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 150316s1987 |||| o||u| ||||||eng d | ||
| 020 | |a 9783642729676 |c Online |9 978-3-642-72967-6 | ||
| 020 | |a 9783642729690 |c Print |9 978-3-642-72969-0 | ||
| 024 | 7 | |a 10.1007/978-3-642-72967-6 |2 doi | |
| 035 | |a (OCoLC)905353632 | ||
| 035 | |a (DE-599)BVBBV042413480 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-83 | ||
| 082 | 0 | |a 548 |2 23 | |
| 084 | |a UP 3100 |0 (DE-625)146372: |2 rvk | ||
| 084 | |a UP 7570 |0 (DE-625)146436: |2 rvk | ||
| 084 | |a ZN 4800 |0 (DE-625)157408: |2 rvk | ||
| 084 | |a UP 3150 |0 (DE-625)146377: |2 rvk | ||
| 084 | |a UP 7500 |0 (DE-625)146433: |2 rvk | ||
| 084 | |a PHY 000 |2 stub | ||
| 245 | 1 | 0 | |a Semiconductor interfaces |b formation and properties ; proceedings of the workshop Les Houches, France Feb. 24 - March 6, 1987 |c Editors: G. Le Lay, J. Derrien, N. Boccara |
| 264 | 1 | |a Berlin, Heidelberg |b Springer Berlin Heidelberg |c 1987 | |
| 300 | |a 1 Online-Ressource (XI, 389p. 243 illus) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a Springer Proceedings in Physics |v 22 | |
| 500 | |a The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success | ||
| 650 | 4 | |a Physics | |
| 650 | 4 | |a Chemistry, Physical organic | |
| 650 | 4 | |a Crystallography | |
| 650 | 4 | |a Electronics | |
| 650 | 4 | |a Optical materials | |
| 650 | 4 | |a Surfaces (Physics) | |
| 650 | 4 | |a Surfaces and Interfaces, Thin Films | |
| 650 | 4 | |a Optical and Electronic Materials | |
| 650 | 4 | |a Physical Chemistry | |
| 650 | 4 | |a Electronics and Microelectronics, Instrumentation | |
| 650 | 4 | |a Optics, Optoelectronics, Plasmonics and Optical Devices | |
| 650 | 0 | 7 | |a Halbleiteroberfläche |0 (DE-588)4137418-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Chemie |0 (DE-588)4009816-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleitergrenzfläche |0 (DE-588)4158802-2 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1987 |z Les Houches |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleitergrenzfläche |0 (DE-588)4158802-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Halbleiteroberfläche |0 (DE-588)4137418-6 |D s |
| 689 | 1 | 1 | |a Chemie |0 (DE-588)4009816-3 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 2 | |5 DE-604 | |
| 700 | 1 | |a Le Lay, Guy |0 (DE-588)1119812283 |4 edt | |
| 700 | 1 | |a Derrien, Jacques |4 edt | |
| 700 | 1 | |a Boccara, Nino |4 edt | |
| 711 | 2 | |a International Winter School on Semiconductor Interfaces: Formation and Properties |d 1987 |c Les Houches |j Sonstige |0 (DE-588)623660-1 |4 oth | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |z 3-540-18328-0 |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |z 0-387-18328-0 |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-3-642-72967-6 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-PHA |a ZDB-2-BAE | ||
| 940 | 1 | |q ZDB-2-PHA_Archive | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-027848973 | ||
Datensatz im Suchindex
| _version_ | 1804153077813477376 |
|---|---|
| any_adam_object | |
| author2 | Le Lay, Guy Derrien, Jacques Boccara, Nino |
| author2_role | edt edt edt |
| author2_variant | l g l lg lgl j d jd n b nb |
| author_GND | (DE-588)1119812283 |
| author_facet | Le Lay, Guy Derrien, Jacques Boccara, Nino |
| building | Verbundindex |
| bvnumber | BV042413480 |
| classification_rvk | UP 3100 UP 7570 ZN 4800 UP 3150 UP 7500 |
| classification_tum | PHY 000 |
| collection | ZDB-2-PHA ZDB-2-BAE |
| ctrlnum | (OCoLC)905353632 (DE-599)BVBBV042413480 |
| dewey-full | 548 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 548 - Crystallography |
| dewey-raw | 548 |
| dewey-search | 548 |
| dewey-sort | 3548 |
| dewey-tens | 540 - Chemistry and allied sciences |
| discipline | Chemie / Pharmazie Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-3-642-72967-6 |
| format | Electronic Conference Proceeding eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>04653nmm a2200769zcb4500</leader><controlfield tag="001">BV042413480</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20230215 </controlfield><controlfield tag="006">a |||| 10||| </controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150316s1987 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783642729676</subfield><subfield code="c">Online</subfield><subfield code="9">978-3-642-72967-6</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783642729690</subfield><subfield code="c">Print</subfield><subfield code="9">978-3-642-72969-0</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-3-642-72967-6</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)905353632</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042413480</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">548</subfield><subfield code="2">23</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3100</subfield><subfield code="0">(DE-625)146372:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 7570</subfield><subfield code="0">(DE-625)146436:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4800</subfield><subfield code="0">(DE-625)157408:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3150</subfield><subfield code="0">(DE-625)146377:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 7500</subfield><subfield code="0">(DE-625)146433:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Semiconductor interfaces</subfield><subfield code="b">formation and properties ; proceedings of the workshop Les Houches, France Feb. 24 - March 6, 1987</subfield><subfield code="c">Editors: G. Le Lay, J. Derrien, N. Boccara</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin, Heidelberg</subfield><subfield code="b">Springer Berlin Heidelberg</subfield><subfield code="c">1987</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (XI, 389p. 243 illus)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Springer Proceedings in Physics</subfield><subfield code="v">22</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Chemistry, Physical organic</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Crystallography</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optical materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surfaces (Physics)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surfaces and Interfaces, Thin Films</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optical and Electronic Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physical Chemistry</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics and Microelectronics, Instrumentation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optics, Optoelectronics, Plasmonics and Optical Devices</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiteroberfläche</subfield><subfield code="0">(DE-588)4137418-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Chemie</subfield><subfield code="0">(DE-588)4009816-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitergrenzfläche</subfield><subfield code="0">(DE-588)4158802-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1987</subfield><subfield code="z">Les Houches</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleitergrenzfläche</subfield><subfield code="0">(DE-588)4158802-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleiteroberfläche</subfield><subfield code="0">(DE-588)4137418-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Chemie</subfield><subfield code="0">(DE-588)4009816-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Le Lay, Guy</subfield><subfield code="0">(DE-588)1119812283</subfield><subfield code="4">edt</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Derrien, Jacques</subfield><subfield code="4">edt</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Boccara, Nino</subfield><subfield code="4">edt</subfield></datafield><datafield tag="711" ind1="2" ind2=" "><subfield code="a">International Winter School on Semiconductor Interfaces: Formation and Properties</subfield><subfield code="d">1987</subfield><subfield code="c">Les Houches</subfield><subfield code="j">Sonstige</subfield><subfield code="0">(DE-588)623660-1</subfield><subfield code="4">oth</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">3-540-18328-0</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">0-387-18328-0</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-3-642-72967-6</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-PHA</subfield><subfield code="a">ZDB-2-BAE</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-PHA_Archive</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027848973</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift 1987 Les Houches gnd-content |
| genre_facet | Konferenzschrift 1987 Les Houches |
| id | DE-604.BV042413480 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:20:53Z |
| institution | BVB |
| institution_GND | (DE-588)623660-1 |
| isbn | 9783642729676 9783642729690 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027848973 |
| oclc_num | 905353632 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | 1 Online-Ressource (XI, 389p. 243 illus) |
| psigel | ZDB-2-PHA ZDB-2-BAE ZDB-2-PHA_Archive |
| publishDate | 1987 |
| publishDateSearch | 1987 |
| publishDateSort | 1987 |
| publisher | Springer Berlin Heidelberg |
| record_format | marc |
| series2 | Springer Proceedings in Physics |
| spelling | Semiconductor interfaces formation and properties ; proceedings of the workshop Les Houches, France Feb. 24 - March 6, 1987 Editors: G. Le Lay, J. Derrien, N. Boccara Berlin, Heidelberg Springer Berlin Heidelberg 1987 1 Online-Ressource (XI, 389p. 243 illus) txt rdacontent c rdamedia cr rdacarrier Springer Proceedings in Physics 22 The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success Physics Chemistry, Physical organic Crystallography Electronics Optical materials Surfaces (Physics) Surfaces and Interfaces, Thin Films Optical and Electronic Materials Physical Chemistry Electronics and Microelectronics, Instrumentation Optics, Optoelectronics, Plasmonics and Optical Devices Halbleiteroberfläche (DE-588)4137418-6 gnd rswk-swf Chemie (DE-588)4009816-3 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleitergrenzfläche (DE-588)4158802-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1987 Les Houches gnd-content Halbleitergrenzfläche (DE-588)4158802-2 s DE-604 Halbleiteroberfläche (DE-588)4137418-6 s Chemie (DE-588)4009816-3 s Halbleiter (DE-588)4022993-2 s Le Lay, Guy (DE-588)1119812283 edt Derrien, Jacques edt Boccara, Nino edt International Winter School on Semiconductor Interfaces: Formation and Properties 1987 Les Houches Sonstige (DE-588)623660-1 oth Erscheint auch als Druck-Ausgabe 3-540-18328-0 Erscheint auch als Druck-Ausgabe 0-387-18328-0 https://doi.org/10.1007/978-3-642-72967-6 Verlag Volltext |
| spellingShingle | Semiconductor interfaces formation and properties ; proceedings of the workshop Les Houches, France Feb. 24 - March 6, 1987 Physics Chemistry, Physical organic Crystallography Electronics Optical materials Surfaces (Physics) Surfaces and Interfaces, Thin Films Optical and Electronic Materials Physical Chemistry Electronics and Microelectronics, Instrumentation Optics, Optoelectronics, Plasmonics and Optical Devices Halbleiteroberfläche (DE-588)4137418-6 gnd Chemie (DE-588)4009816-3 gnd Halbleiter (DE-588)4022993-2 gnd Halbleitergrenzfläche (DE-588)4158802-2 gnd |
| subject_GND | (DE-588)4137418-6 (DE-588)4009816-3 (DE-588)4022993-2 (DE-588)4158802-2 (DE-588)1071861417 |
| title | Semiconductor interfaces formation and properties ; proceedings of the workshop Les Houches, France Feb. 24 - March 6, 1987 |
| title_auth | Semiconductor interfaces formation and properties ; proceedings of the workshop Les Houches, France Feb. 24 - March 6, 1987 |
| title_exact_search | Semiconductor interfaces formation and properties ; proceedings of the workshop Les Houches, France Feb. 24 - March 6, 1987 |
| title_full | Semiconductor interfaces formation and properties ; proceedings of the workshop Les Houches, France Feb. 24 - March 6, 1987 Editors: G. Le Lay, J. Derrien, N. Boccara |
| title_fullStr | Semiconductor interfaces formation and properties ; proceedings of the workshop Les Houches, France Feb. 24 - March 6, 1987 Editors: G. Le Lay, J. Derrien, N. Boccara |
| title_full_unstemmed | Semiconductor interfaces formation and properties ; proceedings of the workshop Les Houches, France Feb. 24 - March 6, 1987 Editors: G. Le Lay, J. Derrien, N. Boccara |
| title_short | Semiconductor interfaces |
| title_sort | semiconductor interfaces formation and properties proceedings of the workshop les houches france feb 24 march 6 1987 |
| title_sub | formation and properties ; proceedings of the workshop Les Houches, France Feb. 24 - March 6, 1987 |
| topic | Physics Chemistry, Physical organic Crystallography Electronics Optical materials Surfaces (Physics) Surfaces and Interfaces, Thin Films Optical and Electronic Materials Physical Chemistry Electronics and Microelectronics, Instrumentation Optics, Optoelectronics, Plasmonics and Optical Devices Halbleiteroberfläche (DE-588)4137418-6 gnd Chemie (DE-588)4009816-3 gnd Halbleiter (DE-588)4022993-2 gnd Halbleitergrenzfläche (DE-588)4158802-2 gnd |
| topic_facet | Physics Chemistry, Physical organic Crystallography Electronics Optical materials Surfaces (Physics) Surfaces and Interfaces, Thin Films Optical and Electronic Materials Physical Chemistry Electronics and Microelectronics, Instrumentation Optics, Optoelectronics, Plasmonics and Optical Devices Halbleiteroberfläche Chemie Halbleiter Halbleitergrenzfläche Konferenzschrift 1987 Les Houches |
| url | https://doi.org/10.1007/978-3-642-72967-6 |
| work_keys_str_mv | AT lelayguy semiconductorinterfacesformationandpropertiesproceedingsoftheworkshopleshouchesfrancefeb24march61987 AT derrienjacques semiconductorinterfacesformationandpropertiesproceedingsoftheworkshopleshouchesfrancefeb24march61987 AT boccaranino semiconductorinterfacesformationandpropertiesproceedingsoftheworkshopleshouchesfrancefeb24march61987 AT internationalwinterschoolonsemiconductorinterfacesformationandpropertiesleshouches semiconductorinterfacesformationandpropertiesproceedingsoftheworkshopleshouchesfrancefeb24march61987 |