Gate Dielectrics and MOS ULSIs: Principles, Technologies and Applications
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Berlin, Heidelberg
Springer Berlin Heidelberg
1997
|
| Schriftenreihe: | Springer Series in Electronics and Photonics
34 |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail |
| Beschreibung: | 1 Online-Ressource (XIV, 352p. 262 illus) |
| ISBN: | 9783642608568 9783642645877 |
| ISSN: | 0172-5734 |
| DOI: | 10.1007/978-3-642-60856-8 |
Internformat
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Datensatz im Suchindex
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| author | Hori, Takashi |
| author_facet | Hori, Takashi |
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| author_sort | Hori, Takashi |
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| bvnumber | BV042413343 |
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| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 530 - Physics |
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| dewey-tens | 530 - Physics |
| discipline | Physik |
| doi_str_mv | 10.1007/978-3-642-60856-8 |
| format | Electronic eBook |
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| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:20:52Z |
| institution | BVB |
| isbn | 9783642608568 9783642645877 |
| issn | 0172-5734 |
| language | English |
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| physical | 1 Online-Ressource (XIV, 352p. 262 illus) |
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| publisher | Springer Berlin Heidelberg |
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| spelling | Hori, Takashi Verfasser aut Gate Dielectrics and MOS ULSIs Principles, Technologies and Applications by Takashi Hori Berlin, Heidelberg Springer Berlin Heidelberg 1997 1 Online-Ressource (XIV, 352p. 262 illus) txt rdacontent c rdamedia cr rdacarrier Springer Series in Electronics and Photonics 34 0172-5734 Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail Physics Optical materials Condensed Matter Physics Optical and Electronic Materials MOS-FET (DE-588)4207266-9 gnd rswk-swf SOI-Technik (DE-588)4128029-5 gnd rswk-swf ULSI (DE-588)4226286-0 gnd rswk-swf Dielektrische Schicht (DE-588)4194257-7 gnd rswk-swf MOS-FET (DE-588)4207266-9 s ULSI (DE-588)4226286-0 s Dielektrische Schicht (DE-588)4194257-7 s SOI-Technik (DE-588)4128029-5 s 1\p DE-604 https://doi.org/10.1007/978-3-642-60856-8 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Hori, Takashi Gate Dielectrics and MOS ULSIs Principles, Technologies and Applications Physics Optical materials Condensed Matter Physics Optical and Electronic Materials MOS-FET (DE-588)4207266-9 gnd SOI-Technik (DE-588)4128029-5 gnd ULSI (DE-588)4226286-0 gnd Dielektrische Schicht (DE-588)4194257-7 gnd |
| subject_GND | (DE-588)4207266-9 (DE-588)4128029-5 (DE-588)4226286-0 (DE-588)4194257-7 |
| title | Gate Dielectrics and MOS ULSIs Principles, Technologies and Applications |
| title_auth | Gate Dielectrics and MOS ULSIs Principles, Technologies and Applications |
| title_exact_search | Gate Dielectrics and MOS ULSIs Principles, Technologies and Applications |
| title_full | Gate Dielectrics and MOS ULSIs Principles, Technologies and Applications by Takashi Hori |
| title_fullStr | Gate Dielectrics and MOS ULSIs Principles, Technologies and Applications by Takashi Hori |
| title_full_unstemmed | Gate Dielectrics and MOS ULSIs Principles, Technologies and Applications by Takashi Hori |
| title_short | Gate Dielectrics and MOS ULSIs |
| title_sort | gate dielectrics and mos ulsis principles technologies and applications |
| title_sub | Principles, Technologies and Applications |
| topic | Physics Optical materials Condensed Matter Physics Optical and Electronic Materials MOS-FET (DE-588)4207266-9 gnd SOI-Technik (DE-588)4128029-5 gnd ULSI (DE-588)4226286-0 gnd Dielektrische Schicht (DE-588)4194257-7 gnd |
| topic_facet | Physics Optical materials Condensed Matter Physics Optical and Electronic Materials MOS-FET SOI-Technik ULSI Dielektrische Schicht |
| url | https://doi.org/10.1007/978-3-642-60856-8 |
| work_keys_str_mv | AT horitakashi gatedielectricsandmosulsisprinciplestechnologiesandapplications |