Silicon Carbide: Recent Major Advances
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Berlin, Heidelberg
Springer Berlin Heidelberg
2004
|
| Series: | Advanced Texts in Physics
|
| Subjects: | |
| Online Access: | Volltext |
| Item Description: | Since the 1997 publication of Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume |
| Physical Description: | 1 Online-Ressource (XXXIV, 899 p) |
| ISBN: | 9783642188701 9783642623332 |
| ISSN: | 1439-2674 |
| DOI: | 10.1007/978-3-642-18870-1 |
Staff View
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Record in the Search Index
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| discipline | Physik |
| doi_str_mv | 10.1007/978-3-642-18870-1 |
| format | Electronic eBook |
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| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:20:52Z |
| institution | BVB |
| isbn | 9783642188701 9783642623332 |
| issn | 1439-2674 |
| language | English |
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| spelling | Choyke, W. J. Verfasser aut Silicon Carbide Recent Major Advances edited by W. J. Choyke, H. Matsunami, G. Pensl Berlin, Heidelberg Springer Berlin Heidelberg 2004 1 Online-Ressource (XXXIV, 899 p) txt rdacontent c rdamedia cr rdacarrier Advanced Texts in Physics 1439-2674 Since the 1997 publication of Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume Engineering Optical materials Surfaces (Physics) Materials Science Optical and Electronic Materials Characterization and Evaluation of Materials Surfaces and Interfaces, Thin Films Condensed Matter Physics Optics, Optoelectronics, Plasmonics and Optical Devices Engineering, general Ingenieurwissenschaften Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 s 1\p DE-604 Matsunami, H. Sonstige oth Pensl, G. Sonstige oth https://doi.org/10.1007/978-3-642-18870-1 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Choyke, W. J. Silicon Carbide Recent Major Advances Engineering Optical materials Surfaces (Physics) Materials Science Optical and Electronic Materials Characterization and Evaluation of Materials Surfaces and Interfaces, Thin Films Condensed Matter Physics Optics, Optoelectronics, Plasmonics and Optical Devices Engineering, general Ingenieurwissenschaften Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4055009-6 |
| title | Silicon Carbide Recent Major Advances |
| title_auth | Silicon Carbide Recent Major Advances |
| title_exact_search | Silicon Carbide Recent Major Advances |
| title_full | Silicon Carbide Recent Major Advances edited by W. J. Choyke, H. Matsunami, G. Pensl |
| title_fullStr | Silicon Carbide Recent Major Advances edited by W. J. Choyke, H. Matsunami, G. Pensl |
| title_full_unstemmed | Silicon Carbide Recent Major Advances edited by W. J. Choyke, H. Matsunami, G. Pensl |
| title_short | Silicon Carbide |
| title_sort | silicon carbide recent major advances |
| title_sub | Recent Major Advances |
| topic | Engineering Optical materials Surfaces (Physics) Materials Science Optical and Electronic Materials Characterization and Evaluation of Materials Surfaces and Interfaces, Thin Films Condensed Matter Physics Optics, Optoelectronics, Plasmonics and Optical Devices Engineering, general Ingenieurwissenschaften Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | Engineering Optical materials Surfaces (Physics) Materials Science Optical and Electronic Materials Characterization and Evaluation of Materials Surfaces and Interfaces, Thin Films Condensed Matter Physics Optics, Optoelectronics, Plasmonics and Optical Devices Engineering, general Ingenieurwissenschaften Siliciumcarbid |
| url | https://doi.org/10.1007/978-3-642-18870-1 |
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