Silicon Carbide: Recent Major Advances
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Berlin, Heidelberg
Springer Berlin Heidelberg
2004
|
| Schriftenreihe: | Advanced Texts in Physics
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | Since the 1997 publication of Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume |
| Beschreibung: | 1 Online-Ressource (XXXIV, 899 p) |
| ISBN: | 9783642188701 9783642623332 |
| ISSN: | 1439-2674 |
| DOI: | 10.1007/978-3-642-18870-1 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV042413106 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 150316s2004 |||| o||u| ||||||eng d | ||
| 020 | |a 9783642188701 |c Online |9 978-3-642-18870-1 | ||
| 020 | |a 9783642623332 |c Print |9 978-3-642-62333-2 | ||
| 024 | 7 | |a 10.1007/978-3-642-18870-1 |2 doi | |
| 035 | |a (OCoLC)725374934 | ||
| 035 | |a (DE-599)BVBBV042413106 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-83 | ||
| 082 | 0 | |a 620.11297 |2 23 | |
| 082 | 0 | |a 620.11295 |2 23 | |
| 084 | |a PHY 000 |2 stub | ||
| 100 | 1 | |a Choyke, W. J. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Silicon Carbide |b Recent Major Advances |c edited by W. J. Choyke, H. Matsunami, G. Pensl |
| 264 | 1 | |a Berlin, Heidelberg |b Springer Berlin Heidelberg |c 2004 | |
| 300 | |a 1 Online-Ressource (XXXIV, 899 p) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a Advanced Texts in Physics |x 1439-2674 | |
| 500 | |a Since the 1997 publication of Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume | ||
| 650 | 4 | |a Engineering | |
| 650 | 4 | |a Optical materials | |
| 650 | 4 | |a Surfaces (Physics) | |
| 650 | 4 | |a Materials Science | |
| 650 | 4 | |a Optical and Electronic Materials | |
| 650 | 4 | |a Characterization and Evaluation of Materials | |
| 650 | 4 | |a Surfaces and Interfaces, Thin Films | |
| 650 | 4 | |a Condensed Matter Physics | |
| 650 | 4 | |a Optics, Optoelectronics, Plasmonics and Optical Devices | |
| 650 | 4 | |a Engineering, general | |
| 650 | 4 | |a Ingenieurwissenschaften | |
| 650 | 0 | 7 | |a Siliciumcarbid |0 (DE-588)4055009-6 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Siliciumcarbid |0 (DE-588)4055009-6 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Matsunami, H. |e Sonstige |4 oth | |
| 700 | 1 | |a Pensl, G. |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-3-642-18870-1 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-PHA |a ZDB-2-BAE | ||
| 940 | 1 | |q ZDB-2-PHA_Archive | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-027848599 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804153076906459136 |
|---|---|
| any_adam_object | |
| author | Choyke, W. J. |
| author_facet | Choyke, W. J. |
| author_role | aut |
| author_sort | Choyke, W. J. |
| author_variant | w j c wj wjc |
| building | Verbundindex |
| bvnumber | BV042413106 |
| classification_tum | PHY 000 |
| collection | ZDB-2-PHA ZDB-2-BAE |
| ctrlnum | (OCoLC)725374934 (DE-599)BVBBV042413106 |
| dewey-full | 620.11297 620.11295 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 620 - Engineering and allied operations |
| dewey-raw | 620.11297 620.11295 |
| dewey-search | 620.11297 620.11295 |
| dewey-sort | 3620.11297 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik |
| doi_str_mv | 10.1007/978-3-642-18870-1 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02994nmm a2200577zc 4500</leader><controlfield tag="001">BV042413106</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150316s2004 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783642188701</subfield><subfield code="c">Online</subfield><subfield code="9">978-3-642-18870-1</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783642623332</subfield><subfield code="c">Print</subfield><subfield code="9">978-3-642-62333-2</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-3-642-18870-1</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)725374934</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042413106</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">620.11297</subfield><subfield code="2">23</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">620.11295</subfield><subfield code="2">23</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Choyke, W. J.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Silicon Carbide</subfield><subfield code="b">Recent Major Advances</subfield><subfield code="c">edited by W. J. Choyke, H. Matsunami, G. Pensl</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin, Heidelberg</subfield><subfield code="b">Springer Berlin Heidelberg</subfield><subfield code="c">2004</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (XXXIV, 899 p)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Advanced Texts in Physics</subfield><subfield code="x">1439-2674</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Since the 1997 publication of Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optical materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surfaces (Physics)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Materials Science</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optical and Electronic Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Characterization and Evaluation of Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surfaces and Interfaces, Thin Films</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Condensed Matter Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optics, Optoelectronics, Plasmonics and Optical Devices</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Engineering, general</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ingenieurwissenschaften</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumcarbid</subfield><subfield code="0">(DE-588)4055009-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Siliciumcarbid</subfield><subfield code="0">(DE-588)4055009-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Matsunami, H.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pensl, G.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-3-642-18870-1</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-PHA</subfield><subfield code="a">ZDB-2-BAE</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-PHA_Archive</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027848599</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| id | DE-604.BV042413106 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:20:52Z |
| institution | BVB |
| isbn | 9783642188701 9783642623332 |
| issn | 1439-2674 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027848599 |
| oclc_num | 725374934 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | 1 Online-Ressource (XXXIV, 899 p) |
| psigel | ZDB-2-PHA ZDB-2-BAE ZDB-2-PHA_Archive |
| publishDate | 2004 |
| publishDateSearch | 2004 |
| publishDateSort | 2004 |
| publisher | Springer Berlin Heidelberg |
| record_format | marc |
| series2 | Advanced Texts in Physics |
| spelling | Choyke, W. J. Verfasser aut Silicon Carbide Recent Major Advances edited by W. J. Choyke, H. Matsunami, G. Pensl Berlin, Heidelberg Springer Berlin Heidelberg 2004 1 Online-Ressource (XXXIV, 899 p) txt rdacontent c rdamedia cr rdacarrier Advanced Texts in Physics 1439-2674 Since the 1997 publication of Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume Engineering Optical materials Surfaces (Physics) Materials Science Optical and Electronic Materials Characterization and Evaluation of Materials Surfaces and Interfaces, Thin Films Condensed Matter Physics Optics, Optoelectronics, Plasmonics and Optical Devices Engineering, general Ingenieurwissenschaften Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 s 1\p DE-604 Matsunami, H. Sonstige oth Pensl, G. Sonstige oth https://doi.org/10.1007/978-3-642-18870-1 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Choyke, W. J. Silicon Carbide Recent Major Advances Engineering Optical materials Surfaces (Physics) Materials Science Optical and Electronic Materials Characterization and Evaluation of Materials Surfaces and Interfaces, Thin Films Condensed Matter Physics Optics, Optoelectronics, Plasmonics and Optical Devices Engineering, general Ingenieurwissenschaften Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4055009-6 |
| title | Silicon Carbide Recent Major Advances |
| title_auth | Silicon Carbide Recent Major Advances |
| title_exact_search | Silicon Carbide Recent Major Advances |
| title_full | Silicon Carbide Recent Major Advances edited by W. J. Choyke, H. Matsunami, G. Pensl |
| title_fullStr | Silicon Carbide Recent Major Advances edited by W. J. Choyke, H. Matsunami, G. Pensl |
| title_full_unstemmed | Silicon Carbide Recent Major Advances edited by W. J. Choyke, H. Matsunami, G. Pensl |
| title_short | Silicon Carbide |
| title_sort | silicon carbide recent major advances |
| title_sub | Recent Major Advances |
| topic | Engineering Optical materials Surfaces (Physics) Materials Science Optical and Electronic Materials Characterization and Evaluation of Materials Surfaces and Interfaces, Thin Films Condensed Matter Physics Optics, Optoelectronics, Plasmonics and Optical Devices Engineering, general Ingenieurwissenschaften Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | Engineering Optical materials Surfaces (Physics) Materials Science Optical and Electronic Materials Characterization and Evaluation of Materials Surfaces and Interfaces, Thin Films Condensed Matter Physics Optics, Optoelectronics, Plasmonics and Optical Devices Engineering, general Ingenieurwissenschaften Siliciumcarbid |
| url | https://doi.org/10.1007/978-3-642-18870-1 |
| work_keys_str_mv | AT choykewj siliconcarbiderecentmajoradvances AT matsunamih siliconcarbiderecentmajoradvances AT penslg siliconcarbiderecentmajoradvances |