Ferroelectric Random Access Memories: Fundamentals and Applications
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Berlin, Heidelberg
Springer Berlin Heidelberg
2004
|
Schriftenreihe: | Topics in Applied Physics
93 |
Schlagworte: | |
Online-Zugang: | Volltext |
Beschreibung: | In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply |
Beschreibung: | 1 Online-Ressource (XIII, 291 p) |
ISBN: | 9783540451631 9783540407188 |
ISSN: | 0303-4216 |
DOI: | 10.1007/b12953 |
Internformat
MARC
LEADER | 00000nmm a2200000zcb4500 | ||
---|---|---|---|
001 | BV042412973 | ||
003 | DE-604 | ||
005 | 00000000000000.0 | ||
007 | cr|uuu---uuuuu | ||
008 | 150316s2004 |||| o||u| ||||||eng d | ||
020 | |a 9783540451631 |c Online |9 978-3-540-45163-1 | ||
020 | |a 9783540407188 |c Print |9 978-3-540-40718-8 | ||
024 | 7 | |a 10.1007/b12953 |2 doi | |
035 | |a (OCoLC)76632573 | ||
035 | |a (DE-599)BVBBV042412973 | ||
040 | |a DE-604 |b ger |e aacr | ||
041 | 0 | |a eng | |
049 | |a DE-91 |a DE-83 | ||
084 | |a PHY 000 |2 stub | ||
100 | 1 | |a Ishiwara, Hiroshi |e Verfasser |4 aut | |
245 | 1 | 0 | |a Ferroelectric Random Access Memories |b Fundamentals and Applications |c edited by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto |
264 | 1 | |a Berlin, Heidelberg |b Springer Berlin Heidelberg |c 2004 | |
300 | |a 1 Online-Ressource (XIII, 291 p) | ||
336 | |b txt |2 rdacontent | ||
337 | |b c |2 rdamedia | ||
338 | |b cr |2 rdacarrier | ||
490 | 0 | |a Topics in Applied Physics |v 93 |x 0303-4216 | |
500 | |a In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply | ||
650 | 4 | |a Chemistry | |
650 | 4 | |a Condensed matter | |
650 | 4 | |a Particles (Nuclear physics) | |
650 | 4 | |a Optical materials | |
650 | 4 | |a Materials | |
650 | 4 | |a Metallic Materials | |
650 | 4 | |a Optical and Electronic Materials | |
650 | 4 | |a Condensed Matter | |
650 | 4 | |a Solid State Physics and Spectroscopy | |
650 | 4 | |a Chemie | |
650 | 0 | 7 | |a Ferroelektrikum |0 (DE-588)4154121-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a RAM |0 (DE-588)4176909-0 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a RAM |0 (DE-588)4176909-0 |D s |
689 | 0 | 1 | |a Ferroelektrikum |0 (DE-588)4154121-2 |D s |
689 | 0 | |8 1\p |5 DE-604 | |
700 | 1 | |a Okuyama, Masanori |e Sonstige |4 oth | |
700 | 1 | |a Arimoto, Yoshihiro |e Sonstige |4 oth | |
856 | 4 | 0 | |u https://doi.org/10.1007/b12953 |x Verlag |3 Volltext |
912 | |a ZDB-2-PHA |a ZDB-2-BAE | ||
940 | 1 | |q ZDB-2-PHA_Archive | |
999 | |a oai:aleph.bib-bvb.de:BVB01-027848466 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
_version_ | 1804153076555186176 |
---|---|
any_adam_object | |
author | Ishiwara, Hiroshi |
author_facet | Ishiwara, Hiroshi |
author_role | aut |
author_sort | Ishiwara, Hiroshi |
author_variant | h i hi |
building | Verbundindex |
bvnumber | BV042412973 |
classification_tum | PHY 000 |
collection | ZDB-2-PHA ZDB-2-BAE |
ctrlnum | (OCoLC)76632573 (DE-599)BVBBV042412973 |
discipline | Physik |
doi_str_mv | 10.1007/b12953 |
format | Electronic eBook |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02850nmm a2200565zcb4500</leader><controlfield tag="001">BV042412973</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150316s2004 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783540451631</subfield><subfield code="c">Online</subfield><subfield code="9">978-3-540-45163-1</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783540407188</subfield><subfield code="c">Print</subfield><subfield code="9">978-3-540-40718-8</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/b12953</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)76632573</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042412973</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ishiwara, Hiroshi</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ferroelectric Random Access Memories</subfield><subfield code="b">Fundamentals and Applications</subfield><subfield code="c">edited by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin, Heidelberg</subfield><subfield code="b">Springer Berlin Heidelberg</subfield><subfield code="c">2004</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (XIII, 291 p)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Topics in Applied Physics</subfield><subfield code="v">93</subfield><subfield code="x">0303-4216</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Chemistry</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Condensed matter</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Particles (Nuclear physics)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optical materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metallic Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optical and Electronic Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Condensed Matter</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Solid State Physics and Spectroscopy</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Chemie</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ferroelektrikum</subfield><subfield code="0">(DE-588)4154121-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">RAM</subfield><subfield code="0">(DE-588)4176909-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">RAM</subfield><subfield code="0">(DE-588)4176909-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Ferroelektrikum</subfield><subfield code="0">(DE-588)4154121-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Okuyama, Masanori</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Arimoto, Yoshihiro</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/b12953</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-PHA</subfield><subfield code="a">ZDB-2-BAE</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-PHA_Archive</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027848466</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
id | DE-604.BV042412973 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T01:20:51Z |
institution | BVB |
isbn | 9783540451631 9783540407188 |
issn | 0303-4216 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027848466 |
oclc_num | 76632573 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM DE-83 |
owner_facet | DE-91 DE-BY-TUM DE-83 |
physical | 1 Online-Ressource (XIII, 291 p) |
psigel | ZDB-2-PHA ZDB-2-BAE ZDB-2-PHA_Archive |
publishDate | 2004 |
publishDateSearch | 2004 |
publishDateSort | 2004 |
publisher | Springer Berlin Heidelberg |
record_format | marc |
series2 | Topics in Applied Physics |
spelling | Ishiwara, Hiroshi Verfasser aut Ferroelectric Random Access Memories Fundamentals and Applications edited by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto Berlin, Heidelberg Springer Berlin Heidelberg 2004 1 Online-Ressource (XIII, 291 p) txt rdacontent c rdamedia cr rdacarrier Topics in Applied Physics 93 0303-4216 In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply Chemistry Condensed matter Particles (Nuclear physics) Optical materials Materials Metallic Materials Optical and Electronic Materials Condensed Matter Solid State Physics and Spectroscopy Chemie Ferroelektrikum (DE-588)4154121-2 gnd rswk-swf RAM (DE-588)4176909-0 gnd rswk-swf RAM (DE-588)4176909-0 s Ferroelektrikum (DE-588)4154121-2 s 1\p DE-604 Okuyama, Masanori Sonstige oth Arimoto, Yoshihiro Sonstige oth https://doi.org/10.1007/b12953 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Ishiwara, Hiroshi Ferroelectric Random Access Memories Fundamentals and Applications Chemistry Condensed matter Particles (Nuclear physics) Optical materials Materials Metallic Materials Optical and Electronic Materials Condensed Matter Solid State Physics and Spectroscopy Chemie Ferroelektrikum (DE-588)4154121-2 gnd RAM (DE-588)4176909-0 gnd |
subject_GND | (DE-588)4154121-2 (DE-588)4176909-0 |
title | Ferroelectric Random Access Memories Fundamentals and Applications |
title_auth | Ferroelectric Random Access Memories Fundamentals and Applications |
title_exact_search | Ferroelectric Random Access Memories Fundamentals and Applications |
title_full | Ferroelectric Random Access Memories Fundamentals and Applications edited by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto |
title_fullStr | Ferroelectric Random Access Memories Fundamentals and Applications edited by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto |
title_full_unstemmed | Ferroelectric Random Access Memories Fundamentals and Applications edited by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto |
title_short | Ferroelectric Random Access Memories |
title_sort | ferroelectric random access memories fundamentals and applications |
title_sub | Fundamentals and Applications |
topic | Chemistry Condensed matter Particles (Nuclear physics) Optical materials Materials Metallic Materials Optical and Electronic Materials Condensed Matter Solid State Physics and Spectroscopy Chemie Ferroelektrikum (DE-588)4154121-2 gnd RAM (DE-588)4176909-0 gnd |
topic_facet | Chemistry Condensed matter Particles (Nuclear physics) Optical materials Materials Metallic Materials Optical and Electronic Materials Condensed Matter Solid State Physics and Spectroscopy Chemie Ferroelektrikum RAM |
url | https://doi.org/10.1007/b12953 |
work_keys_str_mv | AT ishiwarahiroshi ferroelectricrandomaccessmemoriesfundamentalsandapplications AT okuyamamasanori ferroelectricrandomaccessmemoriesfundamentalsandapplications AT arimotoyoshihiro ferroelectricrandomaccessmemoriesfundamentalsandapplications |