Light Scattering in Semiconductor Structures and Superlattices:
Gespeichert in:
| Weitere Verfasser: | , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1991
|
| Schriftenreihe: | NATO ASI Series, Series B: Physics
273 |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of semiconductors to meet and discuss latest developments. Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host materials, and of heterogeneous composite structures. On entering a new decade, one in which technological advances in lithography promise to open even broader horirons for semiconductor physics, it seemed to us to be an ideal time to reflect on the achievements of the past decade, to be brought up to date on the current state-of-the-art, and to catch some glimpses of where the field might be headed in the 1990s |
| Beschreibung: | 1 Online-Ressource (XII, 606 p) |
| ISBN: | 9781489936950 9781489936974 |
| ISSN: | 0258-1221 |
| DOI: | 10.1007/978-1-4899-3695-0 |
Internformat
MARC
| LEADER | 00000nmm a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV042412638 | ||
| 003 | DE-604 | ||
| 005 | 20180130 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 150316s1991 |||| o||u| ||||||eng d | ||
| 020 | |a 9781489936950 |c Online |9 978-1-4899-3695-0 | ||
| 020 | |a 9781489936974 |c Print |9 978-1-4899-3697-4 | ||
| 024 | 7 | |a 10.1007/978-1-4899-3695-0 |2 doi | |
| 035 | |a (OCoLC)905376856 | ||
| 035 | |a (DE-599)BVBBV042412638 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-83 | ||
| 082 | 0 | |a 530.41 |2 23 | |
| 084 | |a PHY 000 |2 stub | ||
| 100 | 1 | |a Lockwood, David J. |4 edt | |
| 245 | 1 | 0 | |a Light Scattering in Semiconductor Structures and Superlattices |c edited by David J. Lockwood, Jeff F. Young |
| 246 | 1 | 3 | |a Proceedings of a NATO ARW held in Mont-Tremblant, Quebec, Canada, March 5--9, 1990 |
| 264 | 1 | |a Boston, MA |b Springer US |c 1991 | |
| 300 | |a 1 Online-Ressource (XII, 606 p) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 1 | |a NATO ASI Series, Series B: Physics |v 273 |x 0258-1221 | |
| 500 | |a Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of semiconductors to meet and discuss latest developments. Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host materials, and of heterogeneous composite structures. On entering a new decade, one in which technological advances in lithography promise to open even broader horirons for semiconductor physics, it seemed to us to be an ideal time to reflect on the achievements of the past decade, to be brought up to date on the current state-of-the-art, and to catch some glimpses of where the field might be headed in the 1990s | ||
| 650 | 4 | |a Physics | |
| 650 | 4 | |a Crystallography | |
| 650 | 4 | |a Surfaces (Physics) | |
| 650 | 4 | |a Solid State Physics | |
| 650 | 4 | |a Spectroscopy and Microscopy | |
| 650 | 4 | |a Condensed Matter Physics | |
| 650 | 4 | |a Characterization and Evaluation of Materials | |
| 650 | 0 | 7 | |a Überstruktur |0 (DE-588)4124343-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Lichtstreuung |0 (DE-588)4167602-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Optische Eigenschaft |0 (DE-588)4123887-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 655 | 7 | |8 1\p |0 (DE-588)1071861417 |a Konferenzschrift |y 1990 |z Mont-Tremblant |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Optische Eigenschaft |0 (DE-588)4123887-4 |D s |
| 689 | 0 | |8 2\p |5 DE-604 | |
| 689 | 1 | 0 | |a Überstruktur |0 (DE-588)4124343-2 |D s |
| 689 | 1 | 1 | |a Lichtstreuung |0 (DE-588)4167602-6 |D s |
| 689 | 1 | |8 3\p |5 DE-604 | |
| 689 | 2 | 0 | |a Lichtstreuung |0 (DE-588)4167602-6 |D s |
| 689 | 2 | 1 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 2 | |8 4\p |5 DE-604 | |
| 700 | 1 | |a Young, Jeff F. |4 edt | |
| 810 | 2 | |a NATO ASI Series, Series B |t Physics |v 273 |w (DE-604)BV005876464 |9 273 | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-1-4899-3695-0 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-PHA |a ZDB-2-BAE | ||
| 940 | 1 | |q ZDB-2-PHA_Archive | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-027848131 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 3\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 4\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804153075739394048 |
|---|---|
| any_adam_object | |
| author2 | Lockwood, David J. Young, Jeff F. |
| author2_role | edt edt |
| author2_variant | d j l dj djl j f y jf jfy |
| author_facet | Lockwood, David J. Young, Jeff F. |
| building | Verbundindex |
| bvnumber | BV042412638 |
| classification_tum | PHY 000 |
| collection | ZDB-2-PHA ZDB-2-BAE |
| ctrlnum | (OCoLC)905376856 (DE-599)BVBBV042412638 |
| dewey-full | 530.41 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 530 - Physics |
| dewey-raw | 530.41 |
| dewey-search | 530.41 |
| dewey-sort | 3530.41 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| doi_str_mv | 10.1007/978-1-4899-3695-0 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>04273nmm a2200697zcb4500</leader><controlfield tag="001">BV042412638</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20180130 </controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150316s1991 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781489936950</subfield><subfield code="c">Online</subfield><subfield code="9">978-1-4899-3695-0</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781489936974</subfield><subfield code="c">Print</subfield><subfield code="9">978-1-4899-3697-4</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-1-4899-3695-0</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)905376856</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042412638</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">530.41</subfield><subfield code="2">23</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lockwood, David J.</subfield><subfield code="4">edt</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Light Scattering in Semiconductor Structures and Superlattices</subfield><subfield code="c">edited by David J. Lockwood, Jeff F. Young</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Proceedings of a NATO ARW held in Mont-Tremblant, Quebec, Canada, March 5--9, 1990</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston, MA</subfield><subfield code="b">Springer US</subfield><subfield code="c">1991</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (XII, 606 p)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">NATO ASI Series, Series B: Physics</subfield><subfield code="v">273</subfield><subfield code="x">0258-1221</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of semiconductors to meet and discuss latest developments. Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host materials, and of heterogeneous composite structures. On entering a new decade, one in which technological advances in lithography promise to open even broader horirons for semiconductor physics, it seemed to us to be an ideal time to reflect on the achievements of the past decade, to be brought up to date on the current state-of-the-art, and to catch some glimpses of where the field might be headed in the 1990s</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Crystallography</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surfaces (Physics)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Solid State Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Spectroscopy and Microscopy</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Condensed Matter Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Characterization and Evaluation of Materials</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Überstruktur</subfield><subfield code="0">(DE-588)4124343-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Lichtstreuung</subfield><subfield code="0">(DE-588)4167602-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Optische Eigenschaft</subfield><subfield code="0">(DE-588)4123887-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="8">1\p</subfield><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1990</subfield><subfield code="z">Mont-Tremblant</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Optische Eigenschaft</subfield><subfield code="0">(DE-588)4123887-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Überstruktur</subfield><subfield code="0">(DE-588)4124343-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Lichtstreuung</subfield><subfield code="0">(DE-588)4167602-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Lichtstreuung</subfield><subfield code="0">(DE-588)4167602-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2="1"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="8">4\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Young, Jeff F.</subfield><subfield code="4">edt</subfield></datafield><datafield tag="810" ind1="2" ind2=" "><subfield code="a">NATO ASI Series, Series B</subfield><subfield code="t">Physics</subfield><subfield code="v">273</subfield><subfield code="w">(DE-604)BV005876464</subfield><subfield code="9">273</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-1-4899-3695-0</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-PHA</subfield><subfield code="a">ZDB-2-BAE</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-PHA_Archive</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027848131</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">4\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| genre | 1\p (DE-588)1071861417 Konferenzschrift 1990 Mont-Tremblant gnd-content |
| genre_facet | Konferenzschrift 1990 Mont-Tremblant |
| id | DE-604.BV042412638 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:20:51Z |
| institution | BVB |
| isbn | 9781489936950 9781489936974 |
| issn | 0258-1221 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027848131 |
| oclc_num | 905376856 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | 1 Online-Ressource (XII, 606 p) |
| psigel | ZDB-2-PHA ZDB-2-BAE ZDB-2-PHA_Archive |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| publisher | Springer US |
| record_format | marc |
| series2 | NATO ASI Series, Series B: Physics |
| spelling | Lockwood, David J. edt Light Scattering in Semiconductor Structures and Superlattices edited by David J. Lockwood, Jeff F. Young Proceedings of a NATO ARW held in Mont-Tremblant, Quebec, Canada, March 5--9, 1990 Boston, MA Springer US 1991 1 Online-Ressource (XII, 606 p) txt rdacontent c rdamedia cr rdacarrier NATO ASI Series, Series B: Physics 273 0258-1221 Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of semiconductors to meet and discuss latest developments. Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host materials, and of heterogeneous composite structures. On entering a new decade, one in which technological advances in lithography promise to open even broader horirons for semiconductor physics, it seemed to us to be an ideal time to reflect on the achievements of the past decade, to be brought up to date on the current state-of-the-art, and to catch some glimpses of where the field might be headed in the 1990s Physics Crystallography Surfaces (Physics) Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics Characterization and Evaluation of Materials Überstruktur (DE-588)4124343-2 gnd rswk-swf Lichtstreuung (DE-588)4167602-6 gnd rswk-swf Optische Eigenschaft (DE-588)4123887-4 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf 1\p (DE-588)1071861417 Konferenzschrift 1990 Mont-Tremblant gnd-content Halbleiter (DE-588)4022993-2 s Optische Eigenschaft (DE-588)4123887-4 s 2\p DE-604 Überstruktur (DE-588)4124343-2 s Lichtstreuung (DE-588)4167602-6 s 3\p DE-604 4\p DE-604 Young, Jeff F. edt NATO ASI Series, Series B Physics 273 (DE-604)BV005876464 273 https://doi.org/10.1007/978-1-4899-3695-0 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Light Scattering in Semiconductor Structures and Superlattices Physics Crystallography Surfaces (Physics) Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics Characterization and Evaluation of Materials Überstruktur (DE-588)4124343-2 gnd Lichtstreuung (DE-588)4167602-6 gnd Optische Eigenschaft (DE-588)4123887-4 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4124343-2 (DE-588)4167602-6 (DE-588)4123887-4 (DE-588)4022993-2 (DE-588)1071861417 |
| title | Light Scattering in Semiconductor Structures and Superlattices |
| title_alt | Proceedings of a NATO ARW held in Mont-Tremblant, Quebec, Canada, March 5--9, 1990 |
| title_auth | Light Scattering in Semiconductor Structures and Superlattices |
| title_exact_search | Light Scattering in Semiconductor Structures and Superlattices |
| title_full | Light Scattering in Semiconductor Structures and Superlattices edited by David J. Lockwood, Jeff F. Young |
| title_fullStr | Light Scattering in Semiconductor Structures and Superlattices edited by David J. Lockwood, Jeff F. Young |
| title_full_unstemmed | Light Scattering in Semiconductor Structures and Superlattices edited by David J. Lockwood, Jeff F. Young |
| title_short | Light Scattering in Semiconductor Structures and Superlattices |
| title_sort | light scattering in semiconductor structures and superlattices |
| topic | Physics Crystallography Surfaces (Physics) Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics Characterization and Evaluation of Materials Überstruktur (DE-588)4124343-2 gnd Lichtstreuung (DE-588)4167602-6 gnd Optische Eigenschaft (DE-588)4123887-4 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Physics Crystallography Surfaces (Physics) Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics Characterization and Evaluation of Materials Überstruktur Lichtstreuung Optische Eigenschaft Halbleiter Konferenzschrift 1990 Mont-Tremblant |
| url | https://doi.org/10.1007/978-1-4899-3695-0 |
| volume_link | (DE-604)BV005876464 |
| work_keys_str_mv | AT lockwooddavidj lightscatteringinsemiconductorstructuresandsuperlattices AT youngjefff lightscatteringinsemiconductorstructuresandsuperlattices AT lockwooddavidj proceedingsofanatoarwheldinmonttremblantquebeccanadamarch591990 AT youngjefff proceedingsofanatoarwheldinmonttremblantquebeccanadamarch591990 |