The physics of submicron semiconductor devices: NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices, held July 10-23, 1983, in San Miniato, Italy
Gespeichert in:
Weitere Verfasser: | , , |
---|---|
Format: | Elektronisch Tagungsbericht E-Book |
Sprache: | English |
Veröffentlicht: |
Boston, MA
Springer US
1988
|
Schriftenreihe: | NATO ASI Series, Series B: Physics
180 |
Schlagworte: | |
Online-Zugang: | Volltext |
Beschreibung: | The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr |
Beschreibung: | 1 Online-Ressource (VIII, 738 p) |
ISBN: | 9781489923820 9781489923844 |
DOI: | 10.1007/978-1-4899-2382-0 |
Internformat
MARC
LEADER | 00000nmm a2200000zcb4500 | ||
---|---|---|---|
001 | BV042412595 | ||
003 | DE-604 | ||
005 | 20230103 | ||
006 | a |||| 10||| | ||
007 | cr|uuu---uuuuu | ||
008 | 150316s1988 |||| o||u| ||||||eng d | ||
020 | |a 9781489923820 |c Online |9 978-1-4899-2382-0 | ||
020 | |a 9781489923844 |c Print |9 978-1-4899-2384-4 | ||
024 | 7 | |a 10.1007/978-1-4899-2382-0 |2 doi | |
035 | |a (OCoLC)860358072 | ||
035 | |a (DE-599)BVBBV042412595 | ||
040 | |a DE-604 |b ger |e aacr | ||
041 | 0 | |a eng | |
049 | |a DE-91 |a DE-83 | ||
082 | 0 | |a 621.3815 |2 23 | |
084 | |a UP 2800 |0 (DE-625)146366: |2 rvk | ||
084 | |a UP 3150 |0 (DE-625)146377: |2 rvk | ||
084 | |a PHY 000 |2 stub | ||
100 | 1 | |a Grubin, Harold L. |4 edt | |
245 | 1 | 0 | |a The physics of submicron semiconductor devices |b NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices, held July 10-23, 1983, in San Miniato, Italy |c edited by Harold L. Grubin, David K. Ferry and C. Jacoboni |
264 | 1 | |a Boston, MA |b Springer US |c 1988 | |
300 | |a 1 Online-Ressource (VIII, 738 p) | ||
336 | |b txt |2 rdacontent | ||
337 | |b c |2 rdamedia | ||
338 | |b cr |2 rdacarrier | ||
490 | 0 | |a NATO ASI Series, Series B: Physics |v 180 | |
500 | |a The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. | ||
500 | |a Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ | ||
500 | |a ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr | ||
650 | 4 | |a Physics | |
650 | 4 | |a Electronic Circuits and Devices | |
650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Halbleiterschaltung |0 (DE-588)4158811-3 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Mikrostruktur |0 (DE-588)4131028-7 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Physikalische Eigenschaft |0 (DE-588)4134738-9 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Elektronentransport |0 (DE-588)4014344-2 |2 gnd |9 rswk-swf |
655 | 7 | |8 1\p |0 (DE-588)1071861417 |a Konferenzschrift |y 1983 |z San Miniato |2 gnd-content | |
689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
689 | 0 | 1 | |a Elektronentransport |0 (DE-588)4014344-2 |D s |
689 | 0 | |8 2\p |5 DE-604 | |
689 | 1 | 0 | |a Halbleiterschaltung |0 (DE-588)4158811-3 |D s |
689 | 1 | 1 | |a Physikalische Eigenschaft |0 (DE-588)4134738-9 |D s |
689 | 1 | |8 3\p |5 DE-604 | |
689 | 2 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
689 | 2 | 1 | |a Mikrostruktur |0 (DE-588)4131028-7 |D s |
689 | 2 | |8 4\p |5 DE-604 | |
700 | 1 | |a Ferry, David K. |d 1940- |0 (DE-588)142331813 |4 edt | |
700 | 1 | |a Jacoboni, Carlo |d 1941- |0 (DE-588)1076830870 |4 edt | |
711 | 2 | |a Advanced Study Institute on Physics of Submicron Semiconductor Devices |d 1983 |c San Miniato |j Sonstige |0 (DE-588)5003177-6 |4 oth | |
776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |z 0-306-42986-1 |
856 | 4 | 0 | |u https://doi.org/10.1007/978-1-4899-2382-0 |x Verlag |3 Volltext |
912 | |a ZDB-2-PHA |a ZDB-2-BAE | ||
940 | 1 | |q ZDB-2-PHA_Archive | |
999 | |a oai:aleph.bib-bvb.de:BVB01-027848088 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 3\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 4\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
_version_ | 1804153075621953536 |
---|---|
any_adam_object | |
author2 | Grubin, Harold L. Ferry, David K. 1940- Jacoboni, Carlo 1941- |
author2_role | edt edt edt |
author2_variant | h l g hl hlg d k f dk dkf c j cj |
author_GND | (DE-588)142331813 (DE-588)1076830870 |
author_facet | Grubin, Harold L. Ferry, David K. 1940- Jacoboni, Carlo 1941- |
building | Verbundindex |
bvnumber | BV042412595 |
classification_rvk | UP 2800 UP 3150 |
classification_tum | PHY 000 |
collection | ZDB-2-PHA ZDB-2-BAE |
ctrlnum | (OCoLC)860358072 (DE-599)BVBBV042412595 |
dewey-full | 621.3815 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815 |
dewey-search | 621.3815 |
dewey-sort | 3621.3815 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
doi_str_mv | 10.1007/978-1-4899-2382-0 |
format | Electronic Conference Proceeding eBook |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>05206nmm a2200721zcb4500</leader><controlfield tag="001">BV042412595</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20230103 </controlfield><controlfield tag="006">a |||| 10||| </controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150316s1988 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781489923820</subfield><subfield code="c">Online</subfield><subfield code="9">978-1-4899-2382-0</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781489923844</subfield><subfield code="c">Print</subfield><subfield code="9">978-1-4899-2384-4</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-1-4899-2382-0</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)860358072</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042412595</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815</subfield><subfield code="2">23</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 2800</subfield><subfield code="0">(DE-625)146366:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3150</subfield><subfield code="0">(DE-625)146377:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Grubin, Harold L.</subfield><subfield code="4">edt</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">The physics of submicron semiconductor devices</subfield><subfield code="b">NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices, held July 10-23, 1983, in San Miniato, Italy</subfield><subfield code="c">edited by Harold L. Grubin, David K. Ferry and C. Jacoboni</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston, MA</subfield><subfield code="b">Springer US</subfield><subfield code="c">1988</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (VIII, 738 p)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">NATO ASI Series, Series B: Physics</subfield><subfield code="v">180</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. </subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ </subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronic Circuits and Devices</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterschaltung</subfield><subfield code="0">(DE-588)4158811-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Mikrostruktur</subfield><subfield code="0">(DE-588)4131028-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Physikalische Eigenschaft</subfield><subfield code="0">(DE-588)4134738-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Elektronentransport</subfield><subfield code="0">(DE-588)4014344-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="8">1\p</subfield><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1983</subfield><subfield code="z">San Miniato</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Elektronentransport</subfield><subfield code="0">(DE-588)4014344-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleiterschaltung</subfield><subfield code="0">(DE-588)4158811-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Physikalische Eigenschaft</subfield><subfield code="0">(DE-588)4134738-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2="1"><subfield code="a">Mikrostruktur</subfield><subfield code="0">(DE-588)4131028-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="8">4\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ferry, David K.</subfield><subfield code="d">1940-</subfield><subfield code="0">(DE-588)142331813</subfield><subfield code="4">edt</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jacoboni, Carlo</subfield><subfield code="d">1941-</subfield><subfield code="0">(DE-588)1076830870</subfield><subfield code="4">edt</subfield></datafield><datafield tag="711" ind1="2" ind2=" "><subfield code="a">Advanced Study Institute on Physics of Submicron Semiconductor Devices</subfield><subfield code="d">1983</subfield><subfield code="c">San Miniato</subfield><subfield code="j">Sonstige</subfield><subfield code="0">(DE-588)5003177-6</subfield><subfield code="4">oth</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">0-306-42986-1</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-1-4899-2382-0</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-PHA</subfield><subfield code="a">ZDB-2-BAE</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-PHA_Archive</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027848088</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">4\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
genre | 1\p (DE-588)1071861417 Konferenzschrift 1983 San Miniato gnd-content |
genre_facet | Konferenzschrift 1983 San Miniato |
id | DE-604.BV042412595 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T01:20:51Z |
institution | BVB |
institution_GND | (DE-588)5003177-6 |
isbn | 9781489923820 9781489923844 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027848088 |
oclc_num | 860358072 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM DE-83 |
owner_facet | DE-91 DE-BY-TUM DE-83 |
physical | 1 Online-Ressource (VIII, 738 p) |
psigel | ZDB-2-PHA ZDB-2-BAE ZDB-2-PHA_Archive |
publishDate | 1988 |
publishDateSearch | 1988 |
publishDateSort | 1988 |
publisher | Springer US |
record_format | marc |
series2 | NATO ASI Series, Series B: Physics |
spelling | Grubin, Harold L. edt The physics of submicron semiconductor devices NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices, held July 10-23, 1983, in San Miniato, Italy edited by Harold L. Grubin, David K. Ferry and C. Jacoboni Boston, MA Springer US 1988 1 Online-Ressource (VIII, 738 p) txt rdacontent c rdamedia cr rdacarrier NATO ASI Series, Series B: Physics 180 The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr Physics Electronic Circuits and Devices Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiterschaltung (DE-588)4158811-3 gnd rswk-swf Mikrostruktur (DE-588)4131028-7 gnd rswk-swf Physikalische Eigenschaft (DE-588)4134738-9 gnd rswk-swf Elektronentransport (DE-588)4014344-2 gnd rswk-swf 1\p (DE-588)1071861417 Konferenzschrift 1983 San Miniato gnd-content Halbleiter (DE-588)4022993-2 s Elektronentransport (DE-588)4014344-2 s 2\p DE-604 Halbleiterschaltung (DE-588)4158811-3 s Physikalische Eigenschaft (DE-588)4134738-9 s 3\p DE-604 Mikrostruktur (DE-588)4131028-7 s 4\p DE-604 Ferry, David K. 1940- (DE-588)142331813 edt Jacoboni, Carlo 1941- (DE-588)1076830870 edt Advanced Study Institute on Physics of Submicron Semiconductor Devices 1983 San Miniato Sonstige (DE-588)5003177-6 oth Erscheint auch als Druck-Ausgabe 0-306-42986-1 https://doi.org/10.1007/978-1-4899-2382-0 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | The physics of submicron semiconductor devices NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices, held July 10-23, 1983, in San Miniato, Italy Physics Electronic Circuits and Devices Halbleiter (DE-588)4022993-2 gnd Halbleiterschaltung (DE-588)4158811-3 gnd Mikrostruktur (DE-588)4131028-7 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd Elektronentransport (DE-588)4014344-2 gnd |
subject_GND | (DE-588)4022993-2 (DE-588)4158811-3 (DE-588)4131028-7 (DE-588)4134738-9 (DE-588)4014344-2 (DE-588)1071861417 |
title | The physics of submicron semiconductor devices NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices, held July 10-23, 1983, in San Miniato, Italy |
title_auth | The physics of submicron semiconductor devices NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices, held July 10-23, 1983, in San Miniato, Italy |
title_exact_search | The physics of submicron semiconductor devices NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices, held July 10-23, 1983, in San Miniato, Italy |
title_full | The physics of submicron semiconductor devices NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices, held July 10-23, 1983, in San Miniato, Italy edited by Harold L. Grubin, David K. Ferry and C. Jacoboni |
title_fullStr | The physics of submicron semiconductor devices NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices, held July 10-23, 1983, in San Miniato, Italy edited by Harold L. Grubin, David K. Ferry and C. Jacoboni |
title_full_unstemmed | The physics of submicron semiconductor devices NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices, held July 10-23, 1983, in San Miniato, Italy edited by Harold L. Grubin, David K. Ferry and C. Jacoboni |
title_short | The physics of submicron semiconductor devices |
title_sort | the physics of submicron semiconductor devices nato advanced study institute on physics of submicron semiconductor devices held july 10 23 1983 in san miniato italy |
title_sub | NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices, held July 10-23, 1983, in San Miniato, Italy |
topic | Physics Electronic Circuits and Devices Halbleiter (DE-588)4022993-2 gnd Halbleiterschaltung (DE-588)4158811-3 gnd Mikrostruktur (DE-588)4131028-7 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd Elektronentransport (DE-588)4014344-2 gnd |
topic_facet | Physics Electronic Circuits and Devices Halbleiter Halbleiterschaltung Mikrostruktur Physikalische Eigenschaft Elektronentransport Konferenzschrift 1983 San Miniato |
url | https://doi.org/10.1007/978-1-4899-2382-0 |
work_keys_str_mv | AT grubinharoldl thephysicsofsubmicronsemiconductordevicesnatoadvancedstudyinstituteonphysicsofsubmicronsemiconductordevicesheldjuly10231983insanminiatoitaly AT ferrydavidk thephysicsofsubmicronsemiconductordevicesnatoadvancedstudyinstituteonphysicsofsubmicronsemiconductordevicesheldjuly10231983insanminiatoitaly AT jacobonicarlo thephysicsofsubmicronsemiconductordevicesnatoadvancedstudyinstituteonphysicsofsubmicronsemiconductordevicesheldjuly10231983insanminiatoitaly AT advancedstudyinstituteonphysicsofsubmicronsemiconductordevicessanminiato thephysicsofsubmicronsemiconductordevicesnatoadvancedstudyinstituteonphysicsofsubmicronsemiconductordevicesheldjuly10231983insanminiatoitaly |