Semiconductor Device Physics and Simulation:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1998
|
| Schriftenreihe: | Microdevices, Physics and Fabrication Technologies
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications |
| Beschreibung: | 1 Online-Ressource (XII, 336 p) |
| ISBN: | 9781489919045 9781489919069 |
| DOI: | 10.1007/978-1-4899-1904-5 |
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| 500 | |a The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications | ||
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Datensatz im Suchindex
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| author | Yuan, J. S. |
| author_facet | Yuan, J. S. |
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| author_sort | Yuan, J. S. |
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| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3 |
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| dewey-sort | 3621.3 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-1-4899-1904-5 |
| format | Electronic eBook |
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| indexdate | 2024-07-10T01:20:50Z |
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| isbn | 9781489919045 9781489919069 |
| language | English |
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| spelling | Yuan, J. S. Verfasser aut Semiconductor Device Physics and Simulation by J. S. Yuan, J. J. Liou Boston, MA Springer US 1998 1 Online-Ressource (XII, 336 p) txt rdacontent c rdamedia cr rdacarrier Microdevices, Physics and Fabrication Technologies The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications Engineering Computer engineering Electrical Engineering Ingenieurwissenschaften Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Numerisches Verfahren (DE-588)4128130-5 gnd rswk-swf pn-Übergang (DE-588)4174949-2 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 s pn-Übergang (DE-588)4174949-2 s Numerisches Verfahren (DE-588)4128130-5 s 1\p DE-604 Liou, J. J. Sonstige oth https://doi.org/10.1007/978-1-4899-1904-5 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Yuan, J. S. Semiconductor Device Physics and Simulation Engineering Computer engineering Electrical Engineering Ingenieurwissenschaften Halbleiterbauelement (DE-588)4113826-0 gnd Numerisches Verfahren (DE-588)4128130-5 gnd pn-Übergang (DE-588)4174949-2 gnd |
| subject_GND | (DE-588)4113826-0 (DE-588)4128130-5 (DE-588)4174949-2 |
| title | Semiconductor Device Physics and Simulation |
| title_auth | Semiconductor Device Physics and Simulation |
| title_exact_search | Semiconductor Device Physics and Simulation |
| title_full | Semiconductor Device Physics and Simulation by J. S. Yuan, J. J. Liou |
| title_fullStr | Semiconductor Device Physics and Simulation by J. S. Yuan, J. J. Liou |
| title_full_unstemmed | Semiconductor Device Physics and Simulation by J. S. Yuan, J. J. Liou |
| title_short | Semiconductor Device Physics and Simulation |
| title_sort | semiconductor device physics and simulation |
| topic | Engineering Computer engineering Electrical Engineering Ingenieurwissenschaften Halbleiterbauelement (DE-588)4113826-0 gnd Numerisches Verfahren (DE-588)4128130-5 gnd pn-Übergang (DE-588)4174949-2 gnd |
| topic_facet | Engineering Computer engineering Electrical Engineering Ingenieurwissenschaften Halbleiterbauelement Numerisches Verfahren pn-Übergang |
| url | https://doi.org/10.1007/978-1-4899-1904-5 |
| work_keys_str_mv | AT yuanjs semiconductordevicephysicsandsimulation AT lioujj semiconductordevicephysicsandsimulation |