Physics of High-Speed Transistors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1993
|
| Schriftenreihe: | Microdevices, Physics and Fabrication Technologies
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing |
| Beschreibung: | 1 Online-Ressource (XIII, 337 p) |
| ISBN: | 9781489912428 9781489912442 |
| DOI: | 10.1007/978-1-4899-1242-8 |
Internformat
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Datensatz im Suchindex
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| author | Požela, Juras |
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| discipline | Physik |
| doi_str_mv | 10.1007/978-1-4899-1242-8 |
| format | Electronic eBook |
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| spelling | Požela, Juras Verfasser aut Physics of High-Speed Transistors by Juras Požela Boston, MA Springer US 1993 1 Online-Ressource (XIII, 337 p) txt rdacontent c rdamedia cr rdacarrier Microdevices, Physics and Fabrication Technologies This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing Physics Crystallography Computer engineering Optical materials Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics Electrical Engineering Optical and Electronic Materials Transistor (DE-588)4060646-6 gnd rswk-swf Transistorschaltung (DE-588)4060647-8 gnd rswk-swf Transistor (DE-588)4060646-6 s 1\p DE-604 Transistorschaltung (DE-588)4060647-8 s 2\p DE-604 https://doi.org/10.1007/978-1-4899-1242-8 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Požela, Juras Physics of High-Speed Transistors Physics Crystallography Computer engineering Optical materials Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics Electrical Engineering Optical and Electronic Materials Transistor (DE-588)4060646-6 gnd Transistorschaltung (DE-588)4060647-8 gnd |
| subject_GND | (DE-588)4060646-6 (DE-588)4060647-8 |
| title | Physics of High-Speed Transistors |
| title_auth | Physics of High-Speed Transistors |
| title_exact_search | Physics of High-Speed Transistors |
| title_full | Physics of High-Speed Transistors by Juras Požela |
| title_fullStr | Physics of High-Speed Transistors by Juras Požela |
| title_full_unstemmed | Physics of High-Speed Transistors by Juras Požela |
| title_short | Physics of High-Speed Transistors |
| title_sort | physics of high speed transistors |
| topic | Physics Crystallography Computer engineering Optical materials Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics Electrical Engineering Optical and Electronic Materials Transistor (DE-588)4060646-6 gnd Transistorschaltung (DE-588)4060647-8 gnd |
| topic_facet | Physics Crystallography Computer engineering Optical materials Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics Electrical Engineering Optical and Electronic Materials Transistor Transistorschaltung |
| url | https://doi.org/10.1007/978-1-4899-1242-8 |
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