Thin Film Growth Techniques for Low-Dimensional Structures:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1987
|
| Schriftenreihe: | NATO ASI Series, Series B: Physics
163 |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge |
| Beschreibung: | 1 Online-Ressource (IX, 552 p) |
| ISBN: | 9781468491456 9781468491470 |
| ISSN: | 0258-1221 |
| DOI: | 10.1007/978-1-4684-9145-6 |
Internformat
MARC
| LEADER | 00000nmm a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV042412221 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 150316s1987 |||| o||u| ||||||eng d | ||
| 020 | |a 9781468491456 |c Online |9 978-1-4684-9145-6 | ||
| 020 | |a 9781468491470 |c Print |9 978-1-4684-9147-0 | ||
| 024 | 7 | |a 10.1007/978-1-4684-9145-6 |2 doi | |
| 035 | |a (OCoLC)906700488 | ||
| 035 | |a (DE-599)BVBBV042412221 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-83 | ||
| 082 | 0 | |a 530 |2 23 | |
| 084 | |a PHY 000 |2 stub | ||
| 100 | 1 | |a Farrow, R. F. C. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Thin Film Growth Techniques for Low-Dimensional Structures |c edited by R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, J. H. Neave, A. S. Arrott |
| 264 | 1 | |a Boston, MA |b Springer US |c 1987 | |
| 300 | |a 1 Online-Ressource (IX, 552 p) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a NATO ASI Series, Series B: Physics |v 163 |x 0258-1221 | |
| 500 | |a This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge | ||
| 650 | 4 | |a Physics | |
| 650 | 4 | |a Physics, general | |
| 650 | 0 | 7 | |a Halbleiterschicht |0 (DE-588)4158812-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Metallschicht |0 (DE-588)4252858-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Metall |0 (DE-588)4038860-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Dünne Schicht |0 (DE-588)4136925-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Niederdimensionaler Leiter |0 (DE-588)4249439-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 655 | 7 | |8 1\p |0 (DE-588)1071861417 |a Konferenzschrift |y 1987 |z Brighton |2 gnd-content | |
| 655 | 7 | |8 2\p |0 (DE-588)4143413-4 |a Aufsatzsammlung |2 gnd-content | |
| 655 | 7 | |8 3\p |0 (DE-588)1071861417 |a Konferenzschrift |y 1986 |z Brighton |2 gnd-content | |
| 689 | 0 | 0 | |a Dünne Schicht |0 (DE-588)4136925-7 |D s |
| 689 | 0 | 1 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | |8 4\p |5 DE-604 | |
| 689 | 1 | 0 | |a Niederdimensionaler Leiter |0 (DE-588)4249439-4 |D s |
| 689 | 1 | 1 | |a Dünne Schicht |0 (DE-588)4136925-7 |D s |
| 689 | 1 | |8 5\p |5 DE-604 | |
| 689 | 2 | 0 | |a Metallschicht |0 (DE-588)4252858-6 |D s |
| 689 | 2 | 1 | |a Dünne Schicht |0 (DE-588)4136925-7 |D s |
| 689 | 2 | |8 6\p |5 DE-604 | |
| 689 | 3 | 0 | |a Dünne Schicht |0 (DE-588)4136925-7 |D s |
| 689 | 3 | 1 | |a Metall |0 (DE-588)4038860-8 |D s |
| 689 | 3 | |8 7\p |5 DE-604 | |
| 689 | 4 | 0 | |a Halbleiterschicht |0 (DE-588)4158812-5 |D s |
| 689 | 4 | |8 8\p |5 DE-604 | |
| 700 | 1 | |a Parkin, S. S. P. |e Sonstige |4 oth | |
| 700 | 1 | |a Dobson, P. J. |e Sonstige |4 oth | |
| 700 | 1 | |a Neave, J. H. |e Sonstige |4 oth | |
| 700 | 1 | |a Arrott, A. S. |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-1-4684-9145-6 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-PHA |a ZDB-2-BAE | ||
| 940 | 1 | |q ZDB-2-PHA_Archive | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-027847713 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 3\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 4\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 5\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 6\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 7\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 8\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804153074697109504 |
|---|---|
| any_adam_object | |
| author | Farrow, R. F. C. |
| author_facet | Farrow, R. F. C. |
| author_role | aut |
| author_sort | Farrow, R. F. C. |
| author_variant | r f c f rfc rfcf |
| building | Verbundindex |
| bvnumber | BV042412221 |
| classification_tum | PHY 000 |
| collection | ZDB-2-PHA ZDB-2-BAE |
| ctrlnum | (OCoLC)906700488 (DE-599)BVBBV042412221 |
| dewey-full | 530 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 530 - Physics |
| dewey-raw | 530 |
| dewey-search | 530 |
| dewey-sort | 3530 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| doi_str_mv | 10.1007/978-1-4684-9145-6 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>04823nmm a2200805zcb4500</leader><controlfield tag="001">BV042412221</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150316s1987 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781468491456</subfield><subfield code="c">Online</subfield><subfield code="9">978-1-4684-9145-6</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781468491470</subfield><subfield code="c">Print</subfield><subfield code="9">978-1-4684-9147-0</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-1-4684-9145-6</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)906700488</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042412221</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">530</subfield><subfield code="2">23</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Farrow, R. F. C.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Thin Film Growth Techniques for Low-Dimensional Structures</subfield><subfield code="c">edited by R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, J. H. Neave, A. S. Arrott</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston, MA</subfield><subfield code="b">Springer US</subfield><subfield code="c">1987</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (IX, 552 p)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">NATO ASI Series, Series B: Physics</subfield><subfield code="v">163</subfield><subfield code="x">0258-1221</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physics, general</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterschicht</subfield><subfield code="0">(DE-588)4158812-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Metallschicht</subfield><subfield code="0">(DE-588)4252858-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Metall</subfield><subfield code="0">(DE-588)4038860-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Dünne Schicht</subfield><subfield code="0">(DE-588)4136925-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Niederdimensionaler Leiter</subfield><subfield code="0">(DE-588)4249439-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="8">1\p</subfield><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1987</subfield><subfield code="z">Brighton</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="8">2\p</subfield><subfield code="0">(DE-588)4143413-4</subfield><subfield code="a">Aufsatzsammlung</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="8">3\p</subfield><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1986</subfield><subfield code="z">Brighton</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Dünne Schicht</subfield><subfield code="0">(DE-588)4136925-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">4\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Niederdimensionaler Leiter</subfield><subfield code="0">(DE-588)4249439-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Dünne Schicht</subfield><subfield code="0">(DE-588)4136925-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">5\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Metallschicht</subfield><subfield code="0">(DE-588)4252858-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2="1"><subfield code="a">Dünne Schicht</subfield><subfield code="0">(DE-588)4136925-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="8">6\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="3" ind2="0"><subfield code="a">Dünne Schicht</subfield><subfield code="0">(DE-588)4136925-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2="1"><subfield code="a">Metall</subfield><subfield code="0">(DE-588)4038860-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2=" "><subfield code="8">7\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="4" ind2="0"><subfield code="a">Halbleiterschicht</subfield><subfield code="0">(DE-588)4158812-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="4" ind2=" "><subfield code="8">8\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Parkin, S. S. P.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dobson, P. J.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Neave, J. H.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Arrott, A. S.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-1-4684-9145-6</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-PHA</subfield><subfield code="a">ZDB-2-BAE</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-PHA_Archive</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027847713</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">4\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">5\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">6\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">7\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">8\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| genre | 1\p (DE-588)1071861417 Konferenzschrift 1987 Brighton gnd-content 2\p (DE-588)4143413-4 Aufsatzsammlung gnd-content 3\p (DE-588)1071861417 Konferenzschrift 1986 Brighton gnd-content |
| genre_facet | Konferenzschrift 1987 Brighton Aufsatzsammlung Konferenzschrift 1986 Brighton |
| id | DE-604.BV042412221 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:20:50Z |
| institution | BVB |
| isbn | 9781468491456 9781468491470 |
| issn | 0258-1221 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027847713 |
| oclc_num | 906700488 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | 1 Online-Ressource (IX, 552 p) |
| psigel | ZDB-2-PHA ZDB-2-BAE ZDB-2-PHA_Archive |
| publishDate | 1987 |
| publishDateSearch | 1987 |
| publishDateSort | 1987 |
| publisher | Springer US |
| record_format | marc |
| series2 | NATO ASI Series, Series B: Physics |
| spelling | Farrow, R. F. C. Verfasser aut Thin Film Growth Techniques for Low-Dimensional Structures edited by R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, J. H. Neave, A. S. Arrott Boston, MA Springer US 1987 1 Online-Ressource (IX, 552 p) txt rdacontent c rdamedia cr rdacarrier NATO ASI Series, Series B: Physics 163 0258-1221 This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge Physics Physics, general Halbleiterschicht (DE-588)4158812-5 gnd rswk-swf Metallschicht (DE-588)4252858-6 gnd rswk-swf Metall (DE-588)4038860-8 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Niederdimensionaler Leiter (DE-588)4249439-4 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf 1\p (DE-588)1071861417 Konferenzschrift 1987 Brighton gnd-content 2\p (DE-588)4143413-4 Aufsatzsammlung gnd-content 3\p (DE-588)1071861417 Konferenzschrift 1986 Brighton gnd-content Dünne Schicht (DE-588)4136925-7 s Halbleiter (DE-588)4022993-2 s 4\p DE-604 Niederdimensionaler Leiter (DE-588)4249439-4 s 5\p DE-604 Metallschicht (DE-588)4252858-6 s 6\p DE-604 Metall (DE-588)4038860-8 s 7\p DE-604 Halbleiterschicht (DE-588)4158812-5 s 8\p DE-604 Parkin, S. S. P. Sonstige oth Dobson, P. J. Sonstige oth Neave, J. H. Sonstige oth Arrott, A. S. Sonstige oth https://doi.org/10.1007/978-1-4684-9145-6 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 5\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 6\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 7\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 8\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Farrow, R. F. C. Thin Film Growth Techniques for Low-Dimensional Structures Physics Physics, general Halbleiterschicht (DE-588)4158812-5 gnd Metallschicht (DE-588)4252858-6 gnd Metall (DE-588)4038860-8 gnd Dünne Schicht (DE-588)4136925-7 gnd Niederdimensionaler Leiter (DE-588)4249439-4 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4158812-5 (DE-588)4252858-6 (DE-588)4038860-8 (DE-588)4136925-7 (DE-588)4249439-4 (DE-588)4022993-2 (DE-588)1071861417 (DE-588)4143413-4 |
| title | Thin Film Growth Techniques for Low-Dimensional Structures |
| title_auth | Thin Film Growth Techniques for Low-Dimensional Structures |
| title_exact_search | Thin Film Growth Techniques for Low-Dimensional Structures |
| title_full | Thin Film Growth Techniques for Low-Dimensional Structures edited by R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, J. H. Neave, A. S. Arrott |
| title_fullStr | Thin Film Growth Techniques for Low-Dimensional Structures edited by R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, J. H. Neave, A. S. Arrott |
| title_full_unstemmed | Thin Film Growth Techniques for Low-Dimensional Structures edited by R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, J. H. Neave, A. S. Arrott |
| title_short | Thin Film Growth Techniques for Low-Dimensional Structures |
| title_sort | thin film growth techniques for low dimensional structures |
| topic | Physics Physics, general Halbleiterschicht (DE-588)4158812-5 gnd Metallschicht (DE-588)4252858-6 gnd Metall (DE-588)4038860-8 gnd Dünne Schicht (DE-588)4136925-7 gnd Niederdimensionaler Leiter (DE-588)4249439-4 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Physics Physics, general Halbleiterschicht Metallschicht Metall Dünne Schicht Niederdimensionaler Leiter Halbleiter Konferenzschrift 1987 Brighton Aufsatzsammlung Konferenzschrift 1986 Brighton |
| url | https://doi.org/10.1007/978-1-4684-9145-6 |
| work_keys_str_mv | AT farrowrfc thinfilmgrowthtechniquesforlowdimensionalstructures AT parkinssp thinfilmgrowthtechniquesforlowdimensionalstructures AT dobsonpj thinfilmgrowthtechniquesforlowdimensionalstructures AT neavejh thinfilmgrowthtechniquesforlowdimensionalstructures AT arrottas thinfilmgrowthtechniquesforlowdimensionalstructures |